High Verdet constant Ga : S : La : O chalcogenide glasses for magneto-optical devices

The magneto-optical rotation at room temperature was measured for three Ga:S:La:O chalcogenide glasses at several laser lines in the visible. The first sample was a binary system constituted by 70 mol % Ga2S3 and 30 mol % La2O3, whereas in the second and third ones the lanthanum oxide was partially substituted by lanthanum sulfide, keeping the amount of gallium sulfide fixed. A pulsed magnetic field between 50 and 80 kG was used for the Faraday rotation measurements. The Verdet constant for one of the ternary samples was found to be as high as 0.205 min G(-1) cm(-1) at 543 nm, indicating that these chalcogenide glasses are very promising for magneto-optical applications. The data for each sample were fitted using the expected analytical expression for the magneto-optical dispersion. Measurements of the refractive index of the glasses at 632.8 nm are also reported. Data on the magneto-optical properties of two high Verdet constant, heavy-metal oxide diamagnetic glasses are also included for comparison. (C) 1999 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(99)00102-6].

Preparation and characterization of LiNi0.8Co0.2O2/PANI microcomposite electrode materials under assisted ultrasonic irradiation

A preparation method for a new electrode material based on the LiNi0.8Co0.2O2/polyaniline (PANI) composite is reported. This material is prepared by in situ polymerization of aniline in the presence of LiNi0.8Co0.2O2 assisted by ultrasonic irradiation. The materials are characterized by XRD, TG-DTA, FTIR, XPS, SEM-EDX, AFM, nitrogen adsorption (BET surface area) and electrical conductivity measurements. PANI in the emeraldine salt form interacts with metal-oxide particles to assure good connectivity. The dc electrical conductivity measurements at room temperature indicate that conductivity values are one order of magnitude higher in the composite than in the oxide alone. This behavior determines better reversibility for Li-insertion in charge-discharge cycles compared to the pristine mixed oxide when used as electrode of lithium batteries. (c) 2005 Elsevier B.V. All rights reserved.

A novel approach for the development of photoluminescent material

We report on several amorphous compounds based on different metal oxianions with intense photoluminescence at room temperature. These compounds were synthesised by a soft chemical process and deposited on Si (100) by a spin-coating technique. To select these different metal oxianions, a classic concept based on a metal oxide network former is used. We describe a minimum set of requirements to obtain an amorphous metal oxide with photoluminescence emission at room temperature.

Qualitative evaluation of active potential barriers in SnO2-based polycrystalline devices by electrostatic force microscopy

This paper discuss the qualitative use of electrostatic force microscopy to study the grain boundary active potential barrier present in dense SnO2-based polycrystalline semiconductors. The effect of heat treatment under rich- and poor-oxygen atmospheres was evaluated while especially considering the number of active barriers at grain boundary regions. The results show that the number of active barriers decrease after heat treatment in an oxygen-poor atmosphere and increase after heat treatment in oxygen-rich atmospheres. The observed effect was explained by considering the presence of oxidized transition metal elements segregated at grain boundary regions which leads to the p-type character of this region, in agreement with the atomic barrier formation mechanism in metal oxide varistor systems.

Evaluation of laser level populations of erbium-doped glasses

A simulation of erbium-doped glass systems, which provides population density for the excited states involved in the 1.5 mu m and also for 2.7 mu m emissions when pumped around 980 nm, is presented. To describe the diode pump laser processes, a theoretical model based in a coupled system of differential rate equations was developed. The approach used and the obtained spectroscopic parameters are discussed. The materials under study are two oxide glasses, lead fluoroborate (PbO-PbF2-B2O3), and heavy metal oxide (Bi2O3 PbO-Ga2O3) and a fluoride glass (ZrF4-BaF2-LaF3-AlF3-NaF), all of them doped with Er3+. (c) 2006 Elsevier B.V. All rights reserved.

Electrostatic force microscopy as a tool to estimate the number of active potential barriers in dense non-Ohmic polycrystalline SnO2 devices

In the present work, electroactive grain boundaries of highly dense metal oxide SnO2-based polycrystalline varistors were determined by electrostatic force microscopy (EFM). The EFM technique was applied to identify electroactive grain boundaries and thus estimate the amount of active grain boundary, which, in the metal oxide SnO2-based varistor, was calculated at around 85%, i.e., much higher than that found in traditional metal oxide ZnO-based varistors. The mean potential barrier height value obtained from the EFM analysis was in complete agreement with the values calculated from the C-V measurements, together with a complex capacitance plane analysis that validates the methodology proposed here. (c) 2006 American Institute of Physics.

Non-Ohmic and dielectric properties of a Ca2Cu2Ti4O12 polycrystalline system

An investigation was made into the non-Ohmic and dielectric properties of a Ca2Cu2Ti4O12 perovskite-type system. Compared to the traditional CaCu3Ti4O12-based composition, the imbalance between the Ca and Cu atoms caused the formation of a polycrystalline system presenting similar to 33.3 mol % of CaCu3Ti4O12 (traditional composition) and similar to 66.7 mol % of CaTiO3. As for non-Ohmic properties, the effect of this Ca and Cu atom imbalance was that a nonlinear electric behavior of similar to 1500 was obtained. This high nonlinear electrical behavior emerged in detriment to the ultrahigh dielectric property frequently reported. The high non-Ohmic property was explained by the existence of Schottky-type barriers, whose formation mechanism may be similar to that proposed for traditional metal oxide non-Ohmic devices, according to similarities discussed herein. (c) 2006 American Institute of Physics.

A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift

A new topology for a LVLP variable-gain CMOS amplifier is presented. Input- and load-stage are built around triode-transconductors so that voltage-gain is fully defined by a linear relationship involving only device-geometries and biases. Excellent gain-accuracy, temperature-insensitivity; and wide range of programmability, are thus achieved. Moreover, adaptative biasing improves the common-mode voltage stability upon gain-adjusting. As an example, a 0-40dB programmablegain audio-amplifier is designed. Its performance is supported by a range of simulations. For VDD=1.8V and 20dB-nominal gain, one has Av=19.97dB, f3db=770KHz and quiescent dissipation of 378μW. Over temperatures from -25°C to 125°C, the 0. ldB-bandwidth is 52KHz. Dynamic-range is optimized to 57.2dB and 42.6dB for gains of 20dB and 40dB, respectively. THD figures correspond to -60.6dB@Vout= 1Vpp and -79.7dB@Vout= 0.5 Vpp. A nearly constant bandwidth for different gains is also attained.

Adsorption of silanes bearing nitrogenated Lewis bases on SiO 2/Si (100) model surfaces

The present paper describes the one-pot procedure for the formation of self-assembled thin films of two silanes on the model oxidized silicon wafer, SiO2/Si. SiO2/Si is a model system for other surfaces, such as glass, quartz, aerosol, and silica gel. MALDI-TOF MS with and without a matrix, XPS, and AFM have confirmed the formation of self-assembled thin films of both 3-imidazolylpropyltrimethoxysilane (3-IPTS) and 4-(N- propyltriethoxysilane-imino)pyridine (4-PTSIP) on the SiO2/Si surface after 30 min. Longer adsorption times lead to the deposition of nonreacted 3-IPTS precursors and the formation of agglomerates on the 3-IPTS monolayer. The formation of 4-PTSIP self-assembled layers on SiO2/Si is also demonstrated. The present results for the flat SiO2/Si surface can lead to a better understanding of the formation of a stationary phase for affinity chromatography as well as transition-metal-supported catalysts on silica and their relationship with surface roughness and ordering. The 3-IPTS and 4-PTSIP modified SiO2/Si wafers can also be envisaged as possible built-on-silicon thin-layer chromatography (TLC) extraction devices for metal determination or N-heterocycle analytes, such as histidine and histamine, with on-spot MALDI-TOF MS detection. © 2005 Elsevier Inc. All rights reserved.

Degradación y recuperación de varistores de ZnO

In the present work it was studied the main aspect that influences on degradation and physical-chemical properties at grain-boundary region of metal oxide varistors and its consequences on microstructure and nonohmic electric properties. Based on the comprehension of the degradation aspects it was proposed some methodologies to recover the varistors nonohmic properties after being failed with long (2000 μs) and short current pulses (8/20 μs). Our analysis shown that one of the cause of degradation process is related to the lowering of oxygen species amount at grain-boundary region. Therefore, it is possible to re-promote oxygen enrichment of such regions by specific thermal treatments in rich oxygen atmospheres (the best condition found in the present work was temperatures around 900°C for 2 h at an oxygen flux of 15 1/h). The proposed nonohmic properties recovering procedure appear to be valid for all kind metal oxide varistors studied and is very important from technological point of view.

Processamento de nanomateriais em hidrotermal convencional e hidrotermal de microondas

Copper, zinc and nickel oxides present different properties in nanostructured form. These nanomaterials present very interesting morphologies such as urchin and flowers. This differents arquitechures can be employed in near future in several areas of applications as: nanocatalysis, nanooptoeletronic and nanomedicine.

Photodetection with gate-controlled lateral BJTs from standard CMOS technology

The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 106 at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ∼ 500μm2 are used. When using this area, the responsivities are 16-20 kA/W. © 2001-2012 IEEE.

Nonlinear Optical Properties of Tungsten Lead-Pyrophosphate Glasses Containing Metallic Copper Nanoparticles

We have prepared heavy metal oxide glasses containing metallic copper nanoparticles with promising nonlinear optical properties which were determined by Z-scan and pump-probe measurements using femtosecond laser pulses. For the wavelengths within the plasmon band, we have observed saturable absorption and response times of 2.3 ps. For the other regions of the spectrum, reverse saturable absorption and lifetimes shorter than 200 fs were verified. The nonlinear refractive index is about 2.0 × 10-19 m2/W from visible to telecom region, thus presenting an enhancement effect at wavelengths near the plasmon and Cu+2 d-d band. © 2013 Springer Science+Business Media New York.

Optical properties of the MoO3-TiO2 particulate system and its use as a ceramic pigment

Mo-doped TiO2 powders were prepared using a dry mixture of TiO2 and MoO3 oxides with several compositions, followed by a calcination step at several temperatures. The resulting oxide system develops yellow and green tones. The XRD patterns showed only traces of MoO 3; however, EDS results, combined with TG/DTA data, confirmed the presence of molybdenum ions, suggesting that the changes in optical properties of the oxide system is due to the incorporation of Mo ions into the TiO 2 matrix, substituting Ti+4 with Mo+6 ions. The band gap decreased with increasing of MoO3 content; on the other hand, the band gap reached a maximum value at about 850°C to 910°C when plotted as a function of the calcination temperature. The glazes produced showed that the oxide system under study is a potential material for use as abinary ceramic pigment. Copyright © 2013 Taylor & Francis Group, LLC.

Projeto de um oscilador controlado por corrente com configuração em anel, tecnologia CMOS e melhoria no ruído de fase

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)