948 resultados para information sciences
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236 p.
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124 p.
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Nowadays, control systems are involved in nearly all aspects of our lives. They are all around us, but their presence is not always really apparent. They are in our kitchens, in our DVD-players, computers and our cars. They are found in elevators, ships, aircraft and spacecraft. Control systems are present in every industry, they are used to control chemical reactors, distillation columns, and nuclear power plants. They are constantly and inexhaustibly working, making our life more comfortable and more efficient...until the system fails. © 2010 Springer-Verlag Berlin Heidelberg.
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On the basis of DBF nets proposed by Wang Shoujue, the model and properties of DBF neural network were discussed in this paper. When applied in pattern recognition, the algorithm and implement on hardware were presented respectively. We did experiments on recognition of omnidirectionally oriented rigid objects on the same level, using direction basis function neural networks, which acts by the method of covering the high dimensional geometrical distribution of the sample set in the feature space. Many animal and vehicle models (even with rather similar shapes) were recognized omnidirectionally thousands of times. For total 8800 tests, the correct recognition rate is 98.75%, the error rate and the rejection rate are 0.5% and 1.25% respectively. (C) 2003 Elsevier Inc. All rights reserved.
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SOI (silicon-on-insulator) is a new material with a lot of important performances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with conventional IC processes. Having the potential of OEIC monolithic integration, SOI based optoelectronic devices have shown many good characteristics and become more and more attractive recently. In this paper, the recent progresses of SOI waveguide devices in our research group are presented. By highly effective numerical simulation, the single mode conditions for SOI rib waveguides with rectangular and trapezoidal cross-section were accurately investigated. Using both chemical anisotropic wet etching and plasma dry etching techniques, SOI single mode rib waveguide, MMI coupler, VOA (variable optical attenuator), 2X2 thermal-optical switch were successfully designed and fabricated. Based on these, 4X4 and 8X8 SOI optical waveguide integrated switch matrixes are demonstrated for the first time.
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AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-mu m gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380 Omega/sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials yielded a pulsed drain current of 784 mA/mm at V-gs=0.5 V and V-ds=7 V with an extrinsic transconductance of 200 mS/mm. A 20-GHz unity current gain cutoff frequency (f(T)) and a 28-GHz maximum oscillation frequency (f(max)) were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W/mm (power density of 3.33 W/mm) with 41% power added efficiency (PAE) at 4 GHz.
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Proceeding from the consideration of the demands from the functional architecture of high speed, high capacity optical communication network, this paper points out that photonic integrated devices, including high speed response laser source, narrow band response photodetector high speed wavelength converter, dense wavelength multi/demultiplexer, low loss high speed response photo-switch and multi-beam coupler are the key components in the system. The, investigation progress in the laboratory will be introduced.