1.° M. T. Ciceronis de oratore libri tres ad Quintum fratrem : sub finem tertii nonnulla desiderantur. — 2.° Luc. Ann. Flori historiae Romanae epitome. — 3.° Titi Livii historiarum periochae, sive summaria. — 4.° Caii Plinii Secundi historiae naturalis liber primus : sub finem nonnulla desiderantur. — 5.° Probae Falconiae versus litteris Longobardicis. — Is codex, si Falconiae versiculos excipias, decimo tertio saeculo videtur exaratus.

Puteanus

Influência de diferentes sistemas de uso e manejo na coesão, resistência ao cisalhamento e óxidos de Fe, Si E Al em solo de tabuleiro costeiro de Alagoas

A tensão de cisalhamento e a coesão do solo constituem importantes propriedades físicas do solo, podendo ser influenciadas pelo sistema de manejo e óxidos de Fe, Si e Al do solo. Os efeitos de diferentes sistemas de manejo de solo cultivado com cana-de-açúcar na tensão de cisalhamento, ângulo de atrito interno, coesão do solo e nos teores de óxidos de Fe, Si e Al de um Argissolo Amarelo Coeso foram estudados em quatro áreas da Usina Triunfo, no Estado de Alagoas. Os tratamentos abrangeram: uma área irrigada, uma área não irrigada, uma com aplicação de vinhaça e uma sob floresta nativa, como condição original. Amostras foram tiradas de cada área a 0,2-0,4 m e 0,4-0,8 m de profundidade. Os sistemas sequeiro e irrigado promoveram os maiores aumentos na coesão, ângulo de atrito interno e resistência ao cisalhamento do solo. Os teores de água e de óxidos no solo influíram nos valores de coesão do solo, tendo sido os maiores valores deste atributo obtidos em solos com teores de água mais baixos e solos com maiores teores de óxidos.

Eppur si muove: un decenni de biblioteques escolars

Anàlisi de les diverses actuacions en el camp de les biblioteques escolars en l'àmbit territorial català des del 1980 fins al 1991. S'hi ressenyen les iniciatives tant institucionals com de caràcter privat que s'han dut a terme amb vista a la seva promoció, com també els estudis i altres treballs de recerca, les publicacions especialitzades i les activitats de formació per al personal que se n'ocupa.

Reliure de : La Fabrica del mondo, di M. Francesco Alunno,... nella quale si contengono tutte le voci di Dante, del Petrarca, del Boccaccio et d'altri buoni autori...

Numérisation partielle de reliure

Reliure de : Le Diverse et artificiose machine del capitano Agostino Ramelli dal ponte della Tresia... Nelle quali si contengono varii et industriosi movimenti... composte in lingua italiana et francese

Numérisation partielle de reliure

Low-loss rib waveguides containing Si nanocrystals embedded in SiO2

We report on the study and modeling of the structural and optical properties of rib-loaded waveguides working in the 600-900-nm spectral range. A Si nanocrystal (Si-nc) rich SiO2 layer with nominal Si excess ranging from 10% to 20% was produced by quadrupole ion implantation of Si into thermal SiO2 formed on a silicon substrate. Si-ncs were precipitated by annealing at 1100°C, forming a 0.4-um-thick core layer in the waveguide. The Si content, the Si-nc density and size, the Si-nc emission, and the active layer effective refractive index were determined by dedicated experiments using x-ray photoelectron spectroscopy, Raman spectroscopy, energy-filtered transmission electron microscopy, photoluminescence and m-lines spectroscopy. Rib-loaded waveguides were fabricated by photolithographic and reactive ion etching processes, with patterned rib widths ranging from 1¿to¿8¿¿m. Light propagation in the waveguide was observed and losses of 11dB/cm at 633 and 780 nm were measured, modeled and interpreted.

Size dependence of refractive index of Si nanoclusters embedded in SiO2

he complex refractive index of SiO2 layers containing Si nanoclusters (Si-nc) has been measured by spectroscopic ellipsometry in the range from 1.5 to 5.0 eV. It has been correlated with the amount of Si excess accurately measured by x-ray photoelectron spectroscopy and the nanocluster size determined by energy-filtered transmission electron microscopy. The Si-nc embedded in SiO2 have been produced by a fourfold Si+ ion implantation, providing uniform Si excess aimed at a reliable ellipsometric modeling. The complex refractive index of the Si-nc phase has been calculated by the application of the Bruggeman effective-medium approximation to the composite media. The characteristic resonances of the refractive index and extinction coefficient of bulk Si vanish out in Si-nc. In agreement with theoretical simulations, a significant reduction of the refractive index of Si-nc is observed, in comparison with bulk and amorphous silicon. The knowledge of the optical properties of these composite layers is crucial for the realization of Si-based waveguides and light-emitting devices.

Optical-geometrical effects on the photoluminescence spectra of Si nanocrystals embedded in SiO2

We demonstrate that thickness, optical constants, and details of the multilayer stack, together with the detection setting, strongly influence the photoluminescence spectra of Si nanocrystals embedded in SiO2. Due to multiple reflections of the visible light against the opaque silicon substrate, an interference pattern is built inside the oxide layer, which is responsible for the modifications in the measured spectra. This interference effect is complicated by the depth dependence of (i) the intensity of the excitation laser and (ii) the concentration of the emitting nanocrystals. These variations can give rise to apparent features in the recorded spectra, such as peak shifts, satellite shoulders, and even splittings, which can be mistaken as intrinsic material features. Thus, they can give rise to an erroneous attribution of optical bands or estimate of the average particle size, while they are only optical-geometrical artifacts. We have analyzed these effects as a function of material composition (Si excess fraction) and thickness, and also evaluated how the geometry of the detection setup affects the measurements. To correct the experimental photoluminescence spectra and extract the true spectral shape of the emission from Si nanocrystals, we have developed an algorithm based on a modulation function, which depends on both the multilayer sequence and the experimental configuration. This procedure can be easily extended to other heterogeneous systems.

White luminescence from Si+ and C+ ion-implanted SiO2 films

The microstructural and optical analysis of SiO2 layers emitting white luminescence is reported. These structures have been synthesized by sequential Si+ and C+ ion implantation and high-temperature annealing. Their white emission results from the presence of up to three bands in the photoluminescence (PL) spectra, covering the whole visible spectral range. The microstructural characterization reveals the presence of a complex multilayer structure: Si nanocrystals are only observed outside the main C-implanted peak region, with a lower density closer to the surface, being also smaller in size. This lack of uniformity in their density has been related to the inhibiting role of C in their growth dynamics. These nanocrystals are responsible for the band appearing in the red region of the PL spectrum. The analysis of the thermal evolution of the red PL band and its behavior after hydrogenation shows that carbon implantation also prevents the formation of well passivated Si/SiO2 interfaces. On the other hand, the PL bands appearing at higher energies show the existence of two different characteristics as a function of the implanted dose. For excess atomic concentrations below or equal to 10%, the spectra show a PL band in the blue region. At higher doses, two bands dominate the green¿blue spectral region. The evolution of these bands with the implanted dose and annealing time suggests that they are related to the formation of carbon-rich precipitates in the implanted region. Moreover, PL versus depth measurements provide a direct correlation of the green band with the carbon-implanted profile. These PL bands have been assigned to two distinct amorphous phases, with a composition close to elemental graphitic carbon or stoichiometric SiC.