Desenvolvimento de catalisadores sem platina: estudos comparativos da oxidação de metanol em 'PD''RU'/'C' e 'PT''RU'/'C' em meio alcalino

Pós-graduação em Química - IQ

The role of oxygen vacancies and their location in the magnetic properties of Ce1-xCuxO2-delta nanorods

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Theoretical study of the stoichiometric and reduced Ce-Doped TiO2 anatase (001) surfaces

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Influence of Cu and Cr on the matrix decomposition of quenched Al-Zn-Mg alloy

The Inoue procedure is used to study the influence of Cr and Cu elements, jointly or individually, on the matrix decomposition of quenched Al-Zn-Mg alloys. The addition of copper and copper with chromium does not significantly change the limits of the temperatures of formation of Guinier-Preston zone and the range of the matrix decomposition. The control of the vacancy concentration in the alloys by different heat treatments and the addition of certain elements such as copper and chromium seems to play an important role in the nucleation rate and the kinetics of phase transformations.

Nanopartículas de Pd suportadas em compósitos óxido-carbono: influência das interações metal-suporte na oxidação de etanol em meio básico

Fuel cells powered directly with ethanol (Direct Ethanol Fuel Cell-DEFC) are very attractive for the possibility of using a renewable fuel in the generation of clean energy. However, it is still necessary to deepen the understanding of catalytic processes and their dependence on the catalytic properties. This work proposes to study the catalytic activity of ethanol oxidation in an alkaline medium of Pd nanoparticles supported in carbon oxide hybrids using various transition metal oxides (MoO3, TiO2, WO3 and ZrO2). The materials prepared were characterized by techniques such as X-ray diffraction, transmission electron microscopy (TEM) and X-ray dispersive spectroscopy (EDX) to verify the structure, the distribution of particles in the supports and the presence of Pd on particles oxide. Experiments of X-rays absorption spectroscopy were carried out using soft X-rays (SXS) to evaluate the changes in the electronic properties of the Pd particles caused by interactions with different oxides. Measurements of cyclic voltammetry and potential sweeps of adsorbed CO oxidation allowed evaluating general aspects of the catalysts' electrochemical behavior and determining the electrochemically active area thereof. The catalytic performances of ethanol oxidation in alkaline medium were evaluated by electrochemical techniques (potential scan and chronoamperometry), and showed an improvement in activity with the addition of oxides in material containing only carbon, which was most pronounced for the catalyst containing TiO2. This improvement was predominantly associated with the electronic effects caused by the interaction of Pd on the support, causing a vacancy in the 4d band of Pd which, in turn, produces variations in adsorption energies of the species...

Nanopartículas de Pd suportadas em compósitos óxido-carbono: influência das interações metal-suporte na oxidação de etanol em meio básico

Fuel cells powered directly with ethanol (Direct Ethanol Fuel Cell-DEFC) are very attractive for the possibility of using a renewable fuel in the generation of clean energy. However, it is still necessary to deepen the understanding of catalytic processes and their dependence on the catalytic properties. This work proposes to study the catalytic activity of ethanol oxidation in an alkaline medium of Pd nanoparticles supported in carbon oxide hybrids using various transition metal oxides (MoO3, TiO2, WO3 and ZrO2). The materials prepared were characterized by techniques such as X-ray diffraction, transmission electron microscopy (TEM) and X-ray dispersive spectroscopy (EDX) to verify the structure, the distribution of particles in the supports and the presence of Pd on particles oxide. Experiments of X-rays absorption spectroscopy were carried out using soft X-rays (SXS) to evaluate the changes in the electronic properties of the Pd particles caused by interactions with different oxides. Measurements of cyclic voltammetry and potential sweeps of adsorbed CO oxidation allowed evaluating general aspects of the catalysts' electrochemical behavior and determining the electrochemically active area thereof. The catalytic performances of ethanol oxidation in alkaline medium were evaluated by electrochemical techniques (potential scan and chronoamperometry), and showed an improvement in activity with the addition of oxides in material containing only carbon, which was most pronounced for the catalyst containing TiO2. This improvement was predominantly associated with the electronic effects caused by the interaction of Pd on the support, causing a vacancy in the 4d band of Pd which, in turn, produces variations in adsorption energies of the species...

EFFECTS OF ADDING LANTHANUM TO Ni/ZrO2 CATALYSTS ON ETHANOL STEAM REFORMING

EFFECTS OF ADDING LANTHANUM TO Ni/ZrO2 CATALYSTS ON ETHANOL STEAM REFORMING. The catalytic performance of Ni/ZrO2 catalysts loaded with different lanthanum content for steam reforming of ethanol was investigated. Catalysts were characterized by BET surface area, X-ray diffraction, UV-vis spectroscopy, temperature programmed reduction, and X-ray absorption fine structure techniques. Results showed that lanthanum addition led to an increase in the degree of reduction of both NiO and nickel surface species interacting; with the support, due to the higher dispersion effect. The best catalytic performance at 450 degrees C was found for the Ni/2LZ catalyst, which exhibited an effluent gaseous mixture with the highest H-2 yield.

Synthesis, characterisation, luminescence and defect centres in solution combustion synthesised CaZrO3:Tb3+ phosphor

Tb3+ doped CaZrO3 has been prepared by an easy solution combustion synthesis method. The combustion derived powder was investigated by X-ray diffraction, Fourier-transform infrared spectrometry and scanning electron microscopy techniques. A room temperature photoluminescence study showed that the phosphors can be efficiently excited by 251 nm light with a weak emission in the blue and orange region and a strong emission in green light region. CaZrO3:Tb3+ exhibits three thermoluminescence (TL) glow peaks at 126 degrees C, 200 degrees C and 480 degrees C. Electron Spin Resonance (ESR) studies were carried out to study the defect centres induced in the phosphor by gamma irradiation and also to identify the centres responsible for the TL peaks. The room temperature ESR spectrum of irradiated phosphor appears to be a superposition of two distinct centres. One of the centres (centre I) with principal g-value 2.0233 is identified as an O- ion. Centre II with an axial symmetric g-tensor with principal values g(parallel to) = 1.9986 and g(perpendicular to) = 2.0023 is assigned to an F+ centre (singly ionised oxygen vacancy). An additional defect centre is observed during thermal annealing experiments and this centre (assigned to F+ centre) seems to originate from an F centre (oxygen vacancy with two electrons). The F centre and also the F+ centre appear to correlate with the observed high temperature TL peak in CaZrO3:Tb3+ phosphor. (c) 2012 Elsevier B.V. All rights reserved.

Enhancement of optical absorption by modulation of the oxygen flow of TiO2 films deposited by reactive sputtering

Oxygen-deficient TiO2 films with enhanced visible and near-infrared optical absorption have been deposited by reactive sputtering using a planar diode radio frequency magnetron configuration. It is observed that the increase in the absorption coefficient is more effective when the O-2 gas supply is periodically interrupted rather than by a decrease of the partial O-2 gas pressure in the deposition plasma. The optical absorption coefficient at 1.5 eV increases from about 1 x 10(2) cm(-1) to more than 4 x 10(3) cm(-1) as a result of the gas flow discontinuity. A red-shift of similar to 0.24 eV in the optical absorption edge is also observed. High resolution transmission electron microscopy with composition analysis shows that the films present a dense columnar morphology, with estimated mean column width of 40nm. Moreover, the interruptions of the O-2 gas flow do not produce detectable variations in the film composition along its growing direction. X-ray diffraction and micro-Raman experiments indicate the presence of the TiO2 anatase, rutile, and brookite phases. The anatase phase is dominant, with a slight increment of the rutile and brookite phases in films deposited under discontinued O-2 gas flow. The increase of optical absorption in the visible and near-infrared regions has been attributed to a high density of defects in the TiO2 films, which is consistent with density functional theory calculations that place oxygen-related vacancy states in the upper third of the optical bandgap. The electronic structure calculation results, along with the adopted deposition method and experimental data, have been used to propose a mechanism to explain the formation of the observed oxygen-related defects in TiO2 thin films. The observed increase in sub-bandgap absorption and the modeling of the corresponding changes in the electronic structure are potentially useful concerning the optimization of efficiency of the photocatalytic activity and the magnetic doping of TiO2 films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4724334]

First principles calculations for vacancies and antisites in PbSe and PbTe: bulk and nanowire.

The energetic stability and the electronic properties of vacancies (VX) and antisites (XY) in PbSe and PbTe are investigated. PbSe and PbTe are narrow band gap semiconductors and have the potential to be used in infrared detectors, laser, and diodes. They are also of special interest for thermoelectric devices (TE). The calculations are based in the Density Functional Theory (DFT) and the General Gradient Approximation (GGA) for the exchange-correlation term, as implemented in the VASP code. The core and valence electrons are described by the Projected Augmented Wave (PAW) and the Plane Wave (PW) methods, respectively. The defects are studied in the bulk and nanowire (NW) system. Our results show that intrinsec defects (vacancies and antisites) in PbTe have lower formation energies in the NW as compared to the bulk and present a trend in migrate to the surface of the NW. For the PbSe we obtain similar results when compare the formation energy for the bulk and NW. However, the Pb vacancy and the antisites are more stable in the core of the NW. The intrinsec defects are shallow defects for the bulk system. For both PbSe and PbTe VPb is a shallow acceptor defect and VSe and VT e are shallow donor defects for the PbSe and PbTe, respectively. Similar electronic properties are observed for the antisites. For the Pb in the anion site we obtain an n-type semiconductor for both PbSe and PbTe, SeP b is a p-type for the PbSe, and T eP b is a n-type for PbTe. Due the quantum con¯nement effects present in the NW (the band gap open), these defects have different electronic properties for the NW as compared to the bulk. Now these defects give rise to electronic levels in the band gap of the PbTe NW and the VT e present a metallic character. For the PbSe NW a p-type and a n-type semiconductor is obtained for the VP b and P bSe, respectively. On the other hand, deep electronic levels are present in the band gap for the VSe and SePb. These results show that due an enhanced in the electronic density of states (DOS) near the Fermi energy, the defective PbSe and PbTe are candidates for efficient TE devices.

Computational investigations of ion conduction mechanisms using enhanced sampling methods

Proper ion channels’ functioning is a prerequisite for a normal cell and disorders involving ion channels, or channelopathies, underlie many human diseases. Long QT syndromes (LQTS) for example may arise from the malfunctioning of hERG channel, caused either by the binding of drugs or mutations in HERG gene. In the first part of this thesis I present a framework to investigate the mechanism of ion conduction through hERG channel. The free energy profile governing the elementary steps of ion translocation in the pore was computed by means of umbrella sampling simulations. Compared to previous studies, we detected a different dynamic behavior: according to our data hERG is more likely to mediate a conduction mechanism which has been referred to as “single-vacancy-like” by Roux and coworkers (2001), rather then a “knock-on” mechanism. The same protocol was applied to a model of hERG presenting the Gly628Ser mutation, found to be cause of congenital LQTS. The results provided interesting insights about the reason of the malfunctioning of the mutant channel. Since they have critical functions in viruses’ life cycle, viral ion channels, such as M2 proton channel, are considered attractive targets for antiviral therapy. A deep knowledge of the mechanisms that the virus employs to survive in the host cell is of primary importance in the identification of new antiviral strategies. In the second part of this thesis I shed light on the role that M2 plays in the control of electrical potential inside the virus, being the charge equilibration a condition required to allow proton influx. The ion conduction through M2 was simulated using metadynamics technique. Based on our results we suggest that a potential anion-mediated cation-proton exchange, as well as a direct anion-proton exchange could both contribute to explain the activity of the M2 channel.

From polymer precursors to metal oxides

We report on a strategy to prepare metal oxides including binary oxide and mixed metal oxide (MMO) in form of nanometer-sized particles using polymer as precursor. Zinc oxide nanoparticles are prepared as an example. The obtained zinc polyacrylate precursor is amorphous as confirmed by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The conversion from polymer precursor to ZnO nanocrystals by thermal pyrolysis was investigated by means of XRD, thermogravimetric analysis (TGA) and electron microscopy. The as-synthesized ZnO consists of many individual particles with a diameter around 40 nm as shown by scanning electron microscopy (SEM). The photoluminescence (PL) and electron paramagnetic (EPR) properties of the material are investigated, too. Employing this method, ZnO nanocrystalline films are fabricated via pyrolysis of a zinc polyacrylate precursor film on solid substrate like silicon and quartz glass. The results of XRD, absorption spectra as well as TEM prove that both the ZnO nanopowder and film undergo same evolution process. Comparing the PL properties of films fabricated in different gas atmosphere, it is assigned that the blue emission of the ZnO films is due to crystal defect of zinc vacancy and green emission from oxygen vacancy. Two kinds of ZnO-based mixed metal oxide (Zn1-xMgxO and Zn1-xCoxO) particles with very precise stoichiometry are prepared by controlled pyrolysis of the corresponding polymer precursor at 550 oC. The MMO crystal particles are typically 20-50 nm in diameter. Doping of Mg in ZnO lattice causes shrinkage of lattice parameter c, while it remains unchanged with Co incorporation. Effects of bandgap engineering are seen in the Mg:ZnO system. The photoluminescence in the visible is enhanced by incorporation of magnesium on zinc lattice sites, while the emission is suppressed in the Co:ZnO system. Magnetic property of cobalt doped-ZnO is checked too and ferromagnetic ordering was not found in our samples. An alternative way to prepare zinc oxide nanoparticles is presented upon calcination of zinc-loaded polymer precursors, which is synthesized via inverse miniemulsion polymerization of the mixture of the acrylic acid and zinc nitrate. The as-prepared ZnO product is compared with that obtained from polymer-salt complex method. The obtained ZnO nanoparticles undergo surface modification via a phosphate modifier applying ultrasonication. The morphology of the modified particles is checked by SEM. And stability of the ZnO nanoparticles in aqueous dispersion is enhanced as indicated by the zeta-potential results.

Photoinduced electronic transitions and leakage correlation to defects/dislocations in GaN heterostructures

III-nitride materials are very promising for high speed electronics/optical applications but still suffer in performance due to problems during high quality epitaxial growth, evolution of dislocation and defects, less understanding of fundamental physics of materials/processing of devices etc. This thesis mainly focus on GaN based heterostructures to understand the metal-semiconductor interface properties, 2DE(H)G influence on electrical and optical properties, and deep level states in GaN and InAlN, InGaN materials. The detailed electrical characterizations have been employed on Schottky diodes at GaN and InAl(Ga)N/GaN heterostructures in order to understand the metal-semiconductor interface related properties in these materials. I have observed the occurrence of Schottky barrier inhomogenity, role of dislocations in terms of leakage and creating electrically active defect states within energy gap of materials. Deep level transient spectroscopy method is employed on GaN, InAlN and InGaN materials and several defect levels have been observed related to majority and minority carriers. In fact, some defects have been found common in characteristics in ternary layers and GaN layer which indicates that those defect levels are from similar origin, most probably due to Ga/N vacancy in GaN/heterostructures. The role of structural defects, roughness has been extensively understood in terms of enhancing the reverse leakage current, suppressing the mobility in InAlN/AlN/GaN based high electron mobility transistor (HEMT) structures which are identified as key issues for GaN technology. Optical spectroscopy methods have been employed to understand materials quality, sub band and defect related transitions and compared with electrical characterizations. The observation of 2DEG sub band related absorption/emission in optical spectra have been identified and proposed for first time in nitride based polar heterostructures, which is well supported with simulation results. In addition, metal-semiconductor-metal (MSM)-InAl(Ga)N/GaN based photodetector structures have been fabricated and proposed for achieving high efficient optoelectronics devices in future.

Radiation-induced defects in calcium fluoride and their influence on material properties under 193 nm laser irradiation

Calcium fluoride (CaF2) is one of the key lens materials in deep-ultraviolet microlithography because of its transparency at 193 nm and its nearly perfect optical isotropy. Its physical and chemical properties make it applicable for lens fabrication. The key feature of CaF2 is its extreme laser stability. rnAfter exposing CaF2 to 193 nm laser irradiation at high fluences, a loss in optical performance is observed, which is related to radiation-induced defect structures in the material. The initial rapid damage process is well understood as the formation of radiation-induced point defects, however, after a long irradiation time of up to 2 months, permanent damage of the crystals is observed. Based on experimental results, these permanent radiation-induced defect structures are identified as metallic Ca colloids.rnThe properties of point defects in CaF2 and their stabilization in the crystal bulk are calculated with density functional theory (DFT). Because the stabilization of the point defects and the formation of metallic Ca colloids are diffusion-driven processes, the diffusion coefficients for the vacancy (F center) and the interstitial (H center) in CaF2 are determined with the nudged elastic band method. The optical properties of Ca colloids in CaF2 are obtained from Mie-theory, and their formation energy is determined.rnBased on experimental observations and the theoretical description of radiation-induced point defects and defect structures, a diffusion-based model for laser-induced material damage in CaF2 is proposed, which also includes a mechanism for annealing of laser damage. rn

Optisch detektierte Magnetresonanz an NV-Zentren in Diamant

Die rasante Entwicklung der Computerindustrie durch die stetige Verkleinerung der Transistoren führt immer schneller zum Erreichen der Grenze der Si-Technologie, ab der die Tunnelprozesse in den Transistoren ihre weitere Verkleinerung und Erhöhung ihrer Dichte in den Prozessoren nicht mehr zulassen. Die Zukunft der Computertechnologie liegt in der Verarbeitung der Quanteninformation. Für die Entwicklung von Quantencomputern ist die Detektion und gezielte Manipulation einzelner Spins in Festkörpern von größter Bedeutung. Die Standardmethoden der Spindetektion, wie ESR, erlauben jedoch nur die Detektion von Spinensembles. Die Idee, die das Auslesen von einzelnen Spins ermöglich sollte, besteht darin, die Manipulation getrennt von der Detektion auszuführen.rn Bei dem NV−-Zentrum handelt es sich um eine spezielle Gitterfehlstelle im Diamant, die sich als einen atomaren, optisch auslesbaren Magnetfeldsensor benutzen lässt. Durch die Messung seiner Fluoreszenz sollte es möglich sein die Manipulation anderer, optisch nicht detektierbaren, “Dunkelspins“ in unmittelbarer Nähe des NV-Zentrums mittels der Spin-Spin-Kopplung zu detektieren. Das vorgeschlagene Modell des Quantencomputers basiert auf dem in SWCNT eingeschlossenen N@C60.Die Peapods, wie die Einheiten aus den in Kohlenstoffnanoröhre gepackten Fullerenen mit eingefangenem Stickstoff genannt werden, sollen die Grundlage für die Recheneinheiten eines wahren skalierbaren Quantencomputers bilden. Die in ihnen mit dem Stickstoff-Elektronenspin durchgeführten Rechnungen sollen mit den oberflächennahen NV-Zentren (von Diamantplatten), über denen sie positioniert sein sollen, optisch ausgelesen werden.rnrnDie vorliegende Arbeit hatte das primäre Ziel, die Kopplung der oberflächennahen NV-Einzelzentren an die optisch nicht detektierbaren Spins der Radikal-Moleküle auf der Diamantoberfläche mittels der ODMR-Kopplungsexperimente optisch zu detektieren und damit entscheidende Schritte auf dem Wege der Realisierung eines Quantenregisters zu tun.rn Es wurde ein sich im Entwicklungsstadium befindende ODMR-Setup wieder aufgebaut und seine bisherige Funktionsweise wurde an kommerziellen NV-Zentrum-reichen Nanodiamanten verifiziert. Im nächsten Schritt wurde die Effektivität und Weise der Messung an die Detektion und Manipulation der oberflächennah (< 7 nm Tiefe) implantieren NV-Einzelzenten in Diamantplatten angepasst.Ein sehr großer Teil der Arbeit, der hier nur bedingt beschrieben werden kann, bestand aus derrnAnpassung der existierenden Steuersoftware an die Problematik der praktischen Messung. Anschließend wurde die korrekte Funktion aller implementierten Pulssequenzen und anderer Software-Verbesserungen durch die Messung an oberflächennah implantierten NV-Einzelzentren verifiziert. Auch wurde der Messplatz um die zur Messung der Doppelresonanz notwendigen Komponenten wie einen steuerbaren Elektromagneten und RF-Signalquelle erweitert. Unter der Berücksichtigung der thermischen Stabilität von N@C60 wurde für zukünftige Experimente auch ein optischer Kryostat geplant, gebaut, in das Setup integriert und charakterisiert.rn Die Spin-Spin-Kopplungsexperimente wurden mit dem sauerstoffstabilen Galvinoxyl-Radikalals einem Modell-System für Kopplung durchgeführt. Dabei wurde über die Kopplung mit einem NVZentrum das RF-Spektrum des gekoppelten Radikal-Spins beobachtet. Auch konnte von dem gekoppelten Spin eine Rabi-Nutation aufgenommen werden.rn Es wurden auch weitere Aspekte der Peapod Messung und Oberflächenimplantation betrachtet.Es wurde untersucht, ob sich die NV-Detektion durch die SWCNTs, Peapods oder Fullerene stören lässt. Es zeigte sich, dass die Komponenten des geplanten Quantencomputers, bis auf die C60-Cluster, für eine ODMR-Messanordnung nicht detektierbar sind und die NV-Messung nicht stören werden. Es wurde auch betrachtet, welche Arten von kommerziellen Diamantplatten für die Oberflächenimplantation geeignet sind, für die Kopplungsmessungen geeignete Dichte der implantierten NV-Zentren abgeschätzt und eine Implantation mit abgeschätzter Dichte betrachtet.