442 resultados para Sternoclavicular dislocation
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Pre-publication drafts are reproduced with permission and copyright © 2013 of the Journal of Orthopaedic Trauma [Mutch J, Rouleau DM, Laflamme GY, Hagemeister N. Accurate Measurement of Greater Tuberosity Displacement without Computed Tomography: Validation of a method on Plain Radiography to guide Surgical Treatment. J Orthop Trauma. 2013 Nov 21: Epub ahead of print.] and copyright © 2014 of the British Editorial Society of Bone and Joint Surgery [Mutch JAJ, Laflamme GY, Hagemeister N, Cikes A, Rouleau DM. A new morphologic classification for greater tuberosity fractures of the proximal humerus: validation and clinical Implications. Bone Joint J 2014;96-B:In press.]
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Le cubitus proximal détient une courbe sagittale unique pour chaque individu, nommée « Proximal Ulna Dorsal Angulation (PUDA) ». Une reconstruction non-anatomique du cubitus proximal, suite à une fracture complexe peut engendrer une malunion, de l’arthrose et de l’instabilité. L’objectif de cette étude était d’évaluer la magnitude de malalignement au niveau de l’angulation proximale dorsale du cubitus qui causerait un malalignement radio-capitellaire, avec et sans un ligament annulaire intact. Afin d’atteindre cet objectif, une étude biomécanique fut conduite sur six spécimens frais congelés avec un simulateur de mouvement du coude. Des fractures simulées au niveau du PUDA, furent stabilisées avec une fixation interne dans cinq configurations différentes. Des images fluoroscopiques furent prises dans différentes positions du coude et de l’avant-bras, avec le ligament annulaire intact, puis relâché. Le déplacement de la tête radiale fut quantifié avec le ratio radio-capitellaire. Une interaction significative fut découverte entre les positions du coude, les angles de malalignement et l’intégrité du ligament annulaire. La subluxation de la tête radiale fut accentuée lors de la déchirure du ligament annulaire. Une augmentation de la subluxation antérieure de la tête radiale fut observée lorsque le malalignement était fixé en extension et lors de mouvements de flexion progressive du coude. D’autre part, un malalignement en flexion et une extension graduelle du coude occasionnait une subluxation postérieure. En conclusion, les résultats ont démontré l’importance d’une reconstruction anatomique du cubitus proximal, car un malalignement de 5 degrés engendre une subluxation de la tête radiale, surtout lors d’une déchirure du ligament annulaire.
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La recherche vise à élaborer la condition tragique qui émane de la figure de l'enfant au cinéma – à travers ses traumas, ses blessures, voire sa destruction et sa perte – devant laquelle le spectateur adulte éprouve un certain malaise. Nous pouvons voir au cinéma des enfants aux prises avec des conditions de vie traumatisantes, voire inhumaines. Que ce soit les enfants abandonnés ou orphelins, les enfants violés, les enfants maltraités, les enfants victimes de guerre – incluant la dualité paradoxale qu’instaure l'enfant-soldat, de Ivan (« L’enfance d’Ivan », Tarkovski, 1962) à Komona (« Rebelle », Kim Nguyen, 2012) – ou les enfants face à la mort, diverses situations peuvent contribuer à inscrire l'enfance dans le registre du tragique, par la destruction ou la perte de l'enfance. L'enfance détruite porte en elle une blessure (trauma) – qu'elle soit physique ou psychique – qui renvoie au « manque », ou à la fragilité humaine que traduit l'image de l'enfant dit « sans secours ». Quand l’enfant doit faire face à une situation tragique où il est sans défense et confronté à son propre anéantissement, sa figure devient pour nous traumatique. Nous suggérons que le tragique place l’enfant au cinéma dans un après-coup qui renvoie à un traumatisme premier fondamental, prototype de toute situation traumatique. Pour le psychanalyste Sigmund Freud, ce serait un traumatisme lié à la détresse infantile – le « Hilflosigkeit » – qui correspond à la première angoisse vécue par le nourrisson dû à son impuissance (« Inhibition, symptôme et angoisse », [1926] 1951, Paris : PUF). Dans cette lignée, certains psychanalystes (comme Otto Rank ou Jean-Marie Delassus) préciseraient que le traumatisme s'installe dès la naissance, qui marque de manière universelle le premier sentiment de perte et d'angoisse suite à l'éjection dans un monde étranger et d'abord impossible, ce qui correspond à une dislocation première (suivant le sens qu’en propose Benoit Goetz dans « La dislocation » (2002, Paris : Éditions de la Passion)). L'enfant au cinéma, qui traverse des épreuves qui nous sont difficiles à concevoir, nous regarde et pointe en nous nos propres faiblesses, et cela interagit avec nos propres traumatismes. Quelques exemples filmiques viendront soutenir la recherche, avec principalement l’analyse d’un film exemplaire, « Les tortues volent aussi » de Bahman Ghobadi (2004).
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Cette thèse de doctorat se rapporte aux films du cinéaste japonais Ozu Yasujirô (1903-1963) suivant l'hypothèse principale que les enjeux de la destruction qui y sont mis en scène, sous la forme de la disparition des liens familiaux et de la mort, ne peuvent être éclairés par la narration, dont le caractère non dramatique est notoire. En figurant la dislocation de la famille, les films d'Ozu rendent plutôt compte de la vulnérabilité du monde à la prise cinématographique : la destructivité du médium s'y énonce comme sa capacité à mobiliser ce qui entre dans son champ et à le transformer en faire-valoir de son aptitude à produire des effets. Cette étude fait ainsi apparaître les images animées, en tant qu'elles relèvent de la logique technique régie par la modernité, comme une forme de désastre, qui atteint la famille comme expérience de la communauté, c'est-à-dire comme rapport constitutif à un hors-de-soi. Mais à cette destructivité fait également face, au sein même de la pratique cinématographique d'Ozu, une autre possibilité du cinéma, qui peut restaurer ces liens menacés. Cette étude du cinéma d'Ozu montre sa profonde affinité avec la pensée du désœuvrement élaborée par Giorgio Agamben, les films du cinéaste et les travaux du philosophe s'éclairant mutuellement. Le concept de désœuvrement permet de reconsidérer les enjeux essentiels des films d'Ozu à un niveau à la fois thématique et formel, immatériel et matériel, articulant ces deux facettes pour en considérer le registre proprement médiatique. Le propos n'est pas essentiellement esthétique ou formaliste, mais s'intéresse avant tout au travail d'Ozu du point de vue des enjeux éthiques du cinéma, qui se formulent en termes de relation à sa puissance. Celle-ci concerne aussi bien l'attention d'Ozu à la vie collective que le soin qu'il porte aux potentialités expressives du cinéma, c'est-à-dire à la manière dont il se rapporte aux limites de son médium.
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The thesis presents the results of the investigations on the crystallisation ‘behaviour, detect structure end electrical properties of certain organic crystals---phthslic snhydride end potsssiun scid phthalate Hollow crystals of phthalic snhydride were grown from vapour. the norpholog of these hollow crystals were studied in detail and s. mechanism for their growth has been proposed. A closed crystal—vapour system was used to study the basal plane growth of the whiskers and the sequential growth, observed, confirmed the mechanism suggested for hollow crystals. The dendritic crystals of phthslic enhydride were grown, both iron the melt and solution. The observed morphologies of these dendrites ere described. Bpherulites of phthalic anhydride have been grown by the artificial initiation of nucleation, from melt and solution. The variation of the substructure oi’ these spherulites with the growth tenperature wee investigated. The spherulitic filll having ribbon substructure were etched to reveal dislocations. A mechanism for the formation of the observed etch pattern has been suggested. the slip occurring in these ribbons were studied and the results are presented
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Over the past years there has been considerable interest in the growth of single crystals both from the point of view of basic research and technological application. With the revolutionary emergence of solid state electronics which is based on single crystal technolo8Ys basic and applied studies on crystal growth and characterization _have gained a-more significant role in material science. These studies are being carried out for single crystals not only of semiconductor and other electronic materials but also of metals and insulators. Many organic crystals belonging to the orthorhombic class exhibit ferroelectric, electrooptic, triboluminescent and piezoelectric properties. Diammonium Hydrogen Citrate (DAHC) crystals are reported to be piezoelectric and triboluminescent /1/. Koptsik et al. /2/ have reported the piezoelectric nature of Citric Acid Monohydrate (CA) crystals. And since not much work has been done on these crystals, it has been thought useful to grow and characterize these crystals. This thesis presents a study of the growth of these crystals from solution and their defect structures. The results of the microindentation and thermal analysis are presented. Dielectric, fractographic, infrared (IR) and ultraviolet (UV) studies of DAHC crystals are also reported
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The physical properties of solid matter are basically influenced by the existence of lattice defects; as a result the study of crystal defects has assumed a central position in solid state physics and materials science. The study of dislocations ixa single crystals can yield a great deal of information on the mechanical properties of materials. In order to secure a full understanding of the processes taking place in semiconducting materials, it is important to investigate the microhardness of these materials-—the most reliable method of determining the fine structure of crystals, the revelation of micro—inhomogenities in the distribution of impurities, the effect of dislocation density on the mechanical properties of crystals etc. Basically electrical conductivity in single crystals is a defect controlled phenomenon and hence detailed investigation of the electrical properties of these materials is one of the best available methods for the study of defects in them. In the present thesis a series of detailed studies carried out in Te—Se system, Bi2Te3 and In2Te3 crystals using surface topographical, dislocation and microindentation analysis as well as electrical measurements are presented
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A nanocomposite is a multiphase solid material where one of the phases has one, two or three dimensions of less than 100 nanometers (nm), or structures having nano-scale repeat distances between the different phases that make up the material. In the broadest sense this definition can include porous media, colloids, gels and copolymers, but is more usually taken to mean the solid combination of a bulk matrix and nano-dimensional phase(s) differing in properties due to dissimilarities in structure and chemistry. The mechanical, electrical, thermal, optical, electrochemical, catalytic properties of the nanocomposite will differ markedly from that of the component materials. Size limits for these effects have been proposed, <5 nm for catalytic activity, <20 nm for making a hard magnetic material soft, <50 nm for refractive index changes, and <100 nm for achieving superparamagnetism, mechanical strengthening or restricting matrix dislocation movement. Conducting polymers have attracted much attention due to high electrical conductivity, ease of preparation, good environmental stability and wide variety of applications in light-emitting, biosensor chemical sensor, separation membrane and electronic devices. The most widely studied conducting polymers are polypyrrole, polyaniline, polythiophene etc. Conducting polymers provide tremendous scope for tuning of their electrical conductivity from semiconducting to metallic region by way of doping and are organic electro chromic materials with chemically active surface. But they are chemically very sensitive and have poor mechanical properties and thus possessing a processibility problem. Nanomaterial shows the presence of more sites for surface reactivity, they possess good mechanical properties and good dispersant too. Thus nanocomposites formed by combining conducting polymers and inorganic oxide nanoparticles possess the good properties of both the constituents and thus enhanced their utility. The properties of such type of nanocomposite are strongly depending on concentration of nanomaterials to be added. Conducting polymer composites is some suitable composition of a conducting polymer with one or more inorganic nanoparticles so that their desirable properties are combined successfully. The composites of core shell metal oxide particles-conducting polymer combine the electrical properties of the polymer shell and the magnetic, optical, electrical or catalytic characteristics of the metal oxide core, which could greatly widen their applicability in the fields of catalysis, electronics and optics. Moreover nanocomposite material composed of conducting polymers & oxides have open more field of application such as drug delivery, conductive paints, rechargeable batteries, toners in photocopying, smart windows, etc.The present work is mainly focussed on the synthesis, characterization and various application studies of conducting polymer modified TiO2 nanocomposites. The conclusions of the present work are outlined below, Mesoporous TiO2 was prepared by the cationic surfactant P123 assisted hydrothermal synthesis route and conducting polymer modified TiO2 nanocomposites were also prepared via the same technique. All the prepared systems show XRD pattern corresponding to anatase phase of TiO2, which means that there is no phase change occurring even after conducting polymer modification. Raman spectroscopy gives supporting evidence for the XRD results. It also confirms the incorporation of the polymer. The mesoporous nature and surface area of the prepared samples were analysed by N2 adsorption desorption studies and the mesoporous ordering can be confirmed by low angle XRD measurementThe morphology of the prepared samples was obtained from both SEM & TEM. The elemental analysis of the samples was performed by EDX analysisThe hybrid composite formation is confirmed by FT-IR spectroscopy and X-ray photoelectron spectroscopyAll the prepared samples have been used for the photocatalytic degradation of dyes, antibiotic, endocrine disruptors and some other organic pollutants. Photocatalytic antibacterial activity studies were also performed using the prepared systemsAll the prepared samples have been used for the photocatalytic degradation of dyes, antibiotic, endocrine disruptors and some other organic pollutants. Photocatalytic antibacterial activity studies were also performed using the prepared systems Polyaniline modified TiO2 nanocomposite systems were found to have good antibacterial activity. Thermal diffusivity studies of the polyaniline modified systems were carried out using thermal lens technique. It is observed that as the amount of polyaniline in the composite increases the thermal diffusivity also increases. The prepared systems can be used as an excellent coolant in various industrial purposes. Nonlinear optical properties (3rd order nonlinearity) of the polyaniline modified systems were studied using Z scan technique. The prepared materials can be used for optical limiting Applications. Lasing studies of polyaniline modified TiO2 systems were carried out and the studies reveal that TiO2 - Polyaniline composite is a potential dye laser gain medium.
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The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.
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Colloidal self assembly is an efficient method for making 3-D ordered nanostructures suitable for materials such as photonic crystals and macroscopic solids for catalysis and sensor applications. Colloidal crystals grown by convective methods exhibit defects on two different scales. Macro defects such as cracks and void bands originate from the dynamics of meniscus motion during colloidal crystal growth while micro defects like vacancies, dislocation and stacking faults are indigenous to the colloidal crystalline structure. This paper analyses the crystallography and energetics of the microscopic defects from the point of view of classical thermodynamics and discusses the strategy for the control of the macroscopic defects through optimization of the liquid-vapor interface.
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The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN layers led to growth of GaN films with decreased tensile stresses and decreased threading dislocation densities, as well as films with improved quality as indicated by x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, and transmission electron microscopy. The possible mechanism of the reduction of tensile stress and the dislocation density is discussed in the paper.
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We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer and the relaxed SiGe buffer are subsequently removed, thereby transferring a strained-Si layer directly to Si substrate without intermediate SiGe or oxide layers. Complete removal of Ge from the structure was confirmed by cross-sectional transmission electron microscopy as well as secondary ion mass spectrometry. A plan-view transmission electron microscopy study of the strained-Si/Si interface reveals that the lattice-mismatch between the layers is accommodated by an orthogonal array of edge dislocations. This misfit dislocation array, which forms upon bonding, is geometrically necessary and has an average spacing of approximately 40nm, in excellent agreement with established dislocation theory. To our knowledge, this is the first study of a chemically homogeneous, yet lattice-mismatched, interface.
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Introducción: la luxación típica de la cadera es una patología con alta incidencia, de ahí la necesidad de métodos efectivos para lograr una reducción de esta. Han surgido varios métodos de reducción, uno de estos métodos es la reducción abierta por vía interna. Metodología Estudió descriptivo retrospectivo, incluyo los casos operados de reducción abierta por vía interna en el Instituto de Ortopedia Infantil Roosevelt y Clínica Jorge Piñeros Corpas por uno de los tutores, desde enero de 2006 hasta junio de 2011, valorando estas caderas según los criterios de Salter de necrosis avascular (NAV), con un seguimiento mínimo de 18 meses. Se evaluó la concordancia interobservador para la clasificación de Salter en tres ortopedistas infantiles. Resultados Se evaluaron 20 caderas en 16 pacientes a los que se realizo reducción abierta de luxación típica de cadera por vía interna. El 40 % de las caderas presentaron NAV, el 75% de estas caderas presentan NAV tipo I según la clasificación de Kalamchi. El índice Kappa para la clasificación de Salter en tres ortopedistas infantiles fue 0.6. Discusión El abordaje por vía interna para la reducción de luxación de cadera típica en niños menores de 18 meses es una alternativa más para el manejo de estos pacientes, que puede producir NAV en la cadera, pero esta NAV es tipo I de Kalamchi en la mayoría de casos. La reproducibilidad de la radiografía para la evaluación de NAV, realizada por personas expertas es buena, medida con índice kappa de 0.6.
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Introducción: El Deslizamiento Epifisiario Capital Femoral es la enfermedad de la cadera más común en adolescentes entre los 9 y 16 años. Es de causa idiopática, más frecuente en hombres, se clasifica en 4 estadios según criterios clínicos y radiológicos. Se buscó evaluar la evolución de los deslizamientos moderados y severos tratados con una de las dos técnicas propuestas. Metodología Se realizó un estudio descriptivo con pacientes que fueron llevados a fijación in situ o luxación controlada entre 2008 y 2011. Resultados: Se incluyeron 26 pacientes, los cuales el 65.4% se les realizó luxación quirúrgica controlada y el 34.6% fijación in situ. El 70,6% de pacientes tenían DECF inestable y 70,5% tenían desplazamiento severo. La evaluación de la escala WOMAC para dolor, rigidez y capacidad funcional encontró mejores beneficios para el grupo de fijación in situ, estadísticamente significativos (p<0,05), no solo en términos de dolor, rigidez y capacidad funcional sino menor frecuencia de complicaciones. Las complicaciones más frecuentes en el grupo de luxación quirúrgica controlada fueron un caso de infección, 7 casos (41,2%) de necrosis avascular de cabeza femoral, 5 casos (29,4%) de condrolisis y 2 casos (11,8%) de pseudoartrosis; En el grupo de fijación in situ, solo 1 (11,1%) presentó Infección del Sitio Operatorio y 1 (11,1%) Condrolisis. Resultados significativos solo para necrosis avascular. Discusión: Los pacientes con deslizamientos moderados y severos manejados con fijación in situ tuvieron una mejor resultado con menor proporción de complicaciones.
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Se realizó un estudio descriptivo observacional para describir los hallazgos radiológicos pre y postoperatorios de pacientes llevados a osteotomía periacetabular tipo Ganz, según las medidas radiológicas del mismo autor, en el Instituto de Ortopedia infantil Roosevelt entre los años 2008 y 2012.