Desenvolvimento de sensor baseado em polímeros molecularmente impressos para determinação de álcoois superiores em óleo fúsel

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Ion-sensing properties of 1D vanadium pentoxide nanostructures

The application of one-dimensional (1D) V2O5 center dot nH(2)O nanostructures as pH sensing material was evaluated. 1D V2O5 center dot nH(2)O nanostructures were obtained by a hydrothermal method with systematic control of morphology forming different nanostructures: nanoribbons, nanowires and nanorods. Deposited onto Au-covered substrates, 1D V2O5 center dot nH(2)O nanostructures were employed as gate material in pH sensors based on separative extended gate FET as an alternative to provide FET isolation from the chemical environment. 1D V2O5 center dot nH(2)O nanostructures showed pH sensitivity around the expected theoretical value. Due to high pH sensing properties, flexibility and low cost, further applications of 1D V2O5 center dot nH(2)O nanostructures comprise enzyme FET-based biosensors using immobilized enzymes.

Light emission and current rectification in a molecular device: Experiment and theory

We have investigated optical and transport properties of the molecular structure 2,3,4,5-tetraphenyl-1-phenylethynyl-cyclopenta-2,4-dienol experimentally and theoretically. The optical spectrum was calculated using Hartree-Fock-intermediate neglect of differential overlap-configuration interaction model. The experimental photoluminescence spectrum showed a peak around 470nm which was very well described by the modeling. Electronic transport measurements showed a diode-like effect with a strong current rectification. A phenomenological microscopic model based on non-equilibrium Green's function technique was proposed and a very good description electronic transport was obtained. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767457]

Vanadium and Titanium Mixed Oxide Films: Synthesis, Characterization and Application as Ion Sensor

Vanadium/titanium mixed oxide films were produced using the sol-gel route. The structural investigation revealed that increased TiO2 molar ratio in the mixed oxide disturbs the V2O5 crystalline structure and makes it amorphous. This blocks the TiO2 phase transformation, so TiO2 stabilizes in the anatase phase. In addition the surface of the sample always presents larger amounts of TiO2 than expected, revealing a concentration gradient along the growth direction. For increased TiO2 molar ratios the roughness of the surface is reduced. Ion sensors were fabricated using the extended gate field effect transistor configuration. The obtained sensitivities varied in the range of 58 mV/pH down to 15 mV/pH according to the composition and morphology of the surface of the samples. Low TiO2 amounts presented better sensing properties that might be related to the cracked and inhomogeneous surfaces. Rising the TiO2 quantity in the films produces homogeneous surfaces but diminishes their sensitivities. Thus, the present paper reveals that the compositional and structural aspects change the surface morphology and electrical properties accounting for the final ion sensing properties of the V2O5/TiO2 films. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.053206jes] All rights reserved.

Dendrimers/TiO2 nanoparticles layer-by-layer films as extended gate FET for pH detection

The layer-by-layer (LbL) technique combined with field-effect transistor (FET) based sensors has enabled the production of pH-sensitive platforms with potential application in biosensors. A variation of the FET architecture, so called separative extended gate FET (SEGFET) devices, are promise as an alternative to conventional ion sensitive FET (ISFET). SEGFET configuration exhibits the advantage of combining the field-effect concept with organic and inorganic materials directly adsorbed on the extended gate, allowing the test of new pH-sensitive materials in a simple and low cost way. In this communication, poly(propylene imine) dendrimer (PPI) and TiO2 nanoparticles (TiO2-np) were assembled onto gold-covered substrates via layer-by-layer technique to produce a low cost SEGFET pH sensor. The sensor presented good pH sensitivity, ca. 57 mV pH(-1), showing that our strategy has potential advantages to fabricate low cost pH-sensing membranes. (C) 2012 Elsevier B.V. All rights reserved.

Herstellung und physikochemische Charakterisierung von planaren gestützten Lipid-Modellmembran-Systemen

Es wurden funktionalisierte polymerunterstützte planare Phospholipid-Modellmembran-Systeme hergestellt und auf jeder Präparationsstufe eingehend charakterisiert. Dünne Polysaccharidfilme wurden in der Form von quellbaren Gelen auf oxidische Oberflächen aufgebracht und bezüglich ihres Quellungsverhaltens und der Oberflächeneigenschaften in Abhängigkeit vom Wassergehalt untersucht. Lipidmonoschichten unterschiedlicher Zusammensetzung wurden mittels Langmuir-Blodgett-Tranfer auf Polymersubstrate übertragen und bezüglich der Stärke der Lipid/Polymer Wechselwirkung, der lateralen Selbstdiffusion in Abhängigkeit von der Wasseraktivität, dem Spreitverhalten der monomolekularen Membran auf dem Substrat in Abhängigkeit von der Wasseraktivität und dem Lateraldruck der Monoschicht, sowie des Ausmaßes der Hydratation im Kopfgruppenbereich der Lipidmembran in Abhängigkeit von der Wasseraktivität mittels Fluoreszensondenmethoden (Fluoreszenzerholung nach Photobleichung (FRAP), Fluoreszenzmikroskopie und Fluoreszenzspektroskopie) untersucht. Diffusions- und Spreitverhalten von amphiphilen Monoschichten auf Polymersubstraten wurden auf der Basis von in dieser Arbeit entwickelten physikalischen Modellen diskutiert. Mittels Langmuir-Schäfer Transfer wurde auf polymerunterstützte Lipidmonoschichten eine zweite Monoschicht übertragen. Die somit erhaltenen Lipid-Doppelschichtmembranen wurden bezüglich ihrer Stabilität, der lateralen Struktur, der lateralen Selbstdiffusion, des Spreitverhaltens auf unbedeckte Bereiche sowie der Stärke der Membran/Substrat Wechselwirkung vermittels Fluoreszenzmikroskopie, FRAP und Interferenz-Kontrast-Mikroskopie (RICM) untersucht. Schließlich wurden substratgestützte Doppelschicht-Lipidmembranen mit als Protonenpumpen fungierenden integralen Membranproteinen versehen. Die laterale Selbstdiffusion der rekonstituierten Proteinmoleküle wurde mittels FRAP, die funktionale Aktivität der Protonenpumpen mit einem Ionen-sensitiven Feldeffekttransistor-Array analysiert.

Chemical Production and Microelectronic Applications of Graphene and Nano-Graphene Derivatives

Graphene and graphenic derivatives have rapidly emerged as an extremely promising system for electronic, optical, thermal, and electromechanical applications. Several approaches have been developed to produce these materials (i.e. scotch tape, CVD, chemical and solvent exfoliation). In this work we report a chemical approach to produce graphene by reducing graphene oxide (GO) via thermal or electrical methods. A morphological and electrical characterization of these systems has been performed using different techniques such as SPM, SEM, TEM, Raman and XPS. Moreover, we studied the interaction between graphene derivates and organic molecules focusing on the following aspects: - improvement of optical contrast of graphene on different substrates for rapid monolayer identification1 - supramolecular interaction with organic molecules (i.e. thiophene, pyrene etc.)4 - covalent functionalization with optically active molecules2 - preparation and characterization of organic/graphene Field Effect Transistors3-5 Graphene chemistry can potentially allow seamless integration of graphene technology in organic electronics devices to improve device performance and develop new applications for graphene-based materials. [1] E. Treossi, M. Melucci, A. Liscio, M. Gazzano, P. Samorì, and V. Palermo, J. Am. Chem. Soc., 2009, 131, 15576. [2] M. Melucci, E. Treossi, L. Ortolani, G. Giambastiani, V. Morandi, P. Klar, C. Casiraghi, P. Samorì, and V. Palermo, J. Mater. Chem., 2010, 20, 9052. [3] J.M. Mativetsky, E. Treossi, E. Orgiu, M. Melucci, G.P. Veronese, P. Samorì, and V. Palermo, J. Am. Chem. Soc., 2010, 132, 14130. [4] A. Liscio, G.P. Veronese, E. Treossi, F. Suriano, F. Rossella, V. Bellani, R. Rizzoli, P. Samorì and V. Palermo, J. Mater. Chem., 2011, 21, 2924. [5] J.M. Mativetsky, A. Liscio, E. Treossi, E. Orgiu, A. Zanelli, P. Samorì , V. Palermo, J. Am. Chem. Soc., 2011, 133, 14320

Finite-element discretization of 3D energy-transport equations for semiconductors

In this thesis a mathematical model was derived that describes the charge and energy transport in semiconductor devices like transistors. Moreover, numerical simulations of these physical processes are performed. In order to accomplish this, methods of theoretical physics, functional analysis, numerical mathematics and computer programming are applied. After an introduction to the status quo of semiconductor device simulation methods and a brief review of historical facts up to now, the attention is shifted to the construction of a model, which serves as the basis of the subsequent derivations in the thesis. Thereby the starting point is an important equation of the theory of dilute gases. From this equation the model equations are derived and specified by means of a series expansion method. This is done in a multi-stage derivation process, which is mainly taken from a scientific paper and which does not constitute the focus of this thesis. In the following phase we specify the mathematical setting and make precise the model assumptions. Thereby we make use of methods of functional analysis. Since the equations we deal with are coupled, we are concerned with a nonstandard problem. In contrary, the theory of scalar elliptic equations is established meanwhile. Subsequently, we are preoccupied with the numerical discretization of the equations. A special finite-element method is used for the discretization. This special approach has to be done in order to make the numerical results appropriate for practical application. By a series of transformations from the discrete model we derive a system of algebraic equations that are eligible for numerical evaluation. Using self-made computer programs we solve the equations to get approximate solutions. These programs are based on new and specialized iteration procedures that are developed and thoroughly tested within the frame of this research work. Due to their importance and their novel status, they are explained and demonstrated in detail. We compare these new iterations with a standard method that is complemented by a feature to fit in the current context. A further innovation is the computation of solutions in three-dimensional domains, which are still rare. Special attention is paid to applicability of the 3D simulation tools. The programs are designed to have justifiable working complexity. The simulation results of some models of contemporary semiconductor devices are shown and detailed comments on the results are given. Eventually, we make a prospect on future development and enhancements of the models and of the algorithms that we used.

Simulation of Smart Materials

The aim of this thesis is the elucidation of structure-properties relationship of molecular semiconductors for electronic devices. This involves the use of a comprehensive set of simulation techniques, ranging from quantum-mechanical to numerical stochastic methods, and also the development of ad-hoc computational tools. In more detail, the research activity regarded two main topics: the study of electronic properties and structural behaviour of liquid crystalline (LC) materials based on functionalised oligo(p-phenyleneethynylene) (OPE), and the investigation on the electric field effect associated to OFET operation on pentacene thin film stability. In this dissertation, a novel family of substituted OPE liquid crystals with applications in stimuli-responsive materials is presented. In more detail, simulations can not only provide evidence for the characterization of the liquid crystalline phases of different OPEs, but elucidate the role of charge transfer states in donor-acceptor LCs containing an endohedral metallofullerene moiety. Such systems can be regarded as promising candidates for organic photovoltaics. Furthermore, exciton dynamics simulations are performed as a way to obtain additional information about the degree of order in OPE columnar phases. Finally, ab initio and molecular mechanics simulations are used to investigate the influence of an applied electric field on pentacene reactivity and stability. The reaction path of pentacene thermal dimerization in the presence of an external electric field is investigated; the results can be related to the fatigue effect observed in OFETs, that show significant performance degradation even in the absence of external agents. In addition to this, the effect of the gate voltage on a pentacene monolayer are simulated, and the results are then compared to X-ray diffraction measurements performed for the first time on operating OFETs.

Trasporto di carica in cristalli organici semiconduttori

Uno dei settori che più si stanno sviluppando nell'ambito della ricerca applicata è senza dubbio quello dell'elettronica organica. Nello specifico lo studio è sospinto dagli indubbi vantaggi che questi dispositivi porterebbero se venissero prodotti su larga scala: basso costo, semplicità realizzativa, leggerezza, flessibilità ed estensione. È da sottolineare che dispositivi basati su materiali organici sono già stati realizzati: si parla di OLED (Organic Light Emitting Diode) LED realizzati sfruttando le proprietà di elettroluminescenza di alcuni materiali organici, OFET (Organig Field Effect Transistor) transistor costruiti con semiconduttori organici, financo celle solari che sfruttano le buone proprietà ottiche di questi composti. Oggetto di analisi di questa tesi è lo studio delle proprietà di trasporto di alcuni cristalli organici, al fine di estrapolarne la mobilità intrinseca e verificare come essa cambi se sottoposti a radiazione x. I due cristalli su cui si è focalizzata questa trattazione sono il 1,5-Dinitronaphtalene e il 2,4-Dinitronaphtol; su di essi è stata eseguita una caratterizzazione ottica e una elettrica, in seguito interpretate con il modello SCLC (Space Charge Limited Current). I risultati ottenuti mostrano che c'è una differenza apprezzabile nella mobilità nei due casi con e senza irraggiamento con raggi x.

Studio di transistor elettrochimici e loro applicazioni

In questa tesi, utilizzando le particolari proprietà del polimero conduttivo poli(3,4-etilenediossitiofene) drogato con polistirene sulfonato , o PEDOT:PSS, sono stati realizzati dei transistor elettrochimici organici (OECTs), in cui il gate e canale source-drain sono stati realizzati depositando su substrato di vetro film sottili di questo polimero. I dispositivi realizzati sono stati caratterizzati, per comprenderne meglio le funzionalità e le proprietà per possibili applicazioni future, in particolare come sensori di glucosio. Il PEDOT:PSS è uno dei materiali più studiati per applicazioni della bioelettronica in virtù della sua grande stabilità chimica e termica, della reversibilità del suo processo di drogaggio, della grande conducibilità e delle sue proprietà elettrochimiche, nonché della sua attività in un vasto range di pH. Vengono trattate nell’elaborato anche le tecniche di deposizione di questo polimero per la creazione di film sottili, necessari per le varie applicazioni nell’ambito della bioelettronica organica, la quale si propone di unire la biologia e l’elettronica in un mutuale scambio di informazioni e segnali. Questa interazione si sta verificando soprattutto nel campo sanitario, come si può evincere dagli esempi riportati nella trattazione. Si conclude la parte teorica con una descrizione degli OECTs: viene spiegata la loro struttura, la capacità di connettere conducibilità ionica ed elettronica e il loro funzionamento, inserendo anche un confronto con i FET (“Field Effect Transistor”), per agevolare la comprensione dei meccanismi presenti in questi strumenti. Per la parte sperimentale si presenta invece una descrizione dettagliata dei procedimenti, degli strumenti e degli accorgimenti usati nel fabbricare i transistor sui quali si è lavorato in laboratorio, riportando anche una piccola esposizione sulle principali misure effettuate: curve caratterische I–V, transcaratteristiche e misure di corrente nel tempo sono le principali acquisizioni fatte per studiare i dispositivi. E’ stata studiata la diversa risposta degli OECTs al variare della concentrazione di PBS in soluzione, mostrando un generale rallentamento dei processi e una diminuzione della capacità di modificare la corrente source-drain al calare della concentrazione. In seguito, è stato effettuato un confronto tra transistor appena fatti e gli stessi analizzati dopo un mese, osservando una riduzione della corrente e quindi della conducibilità, seppur senza una modifica qualitativa delle curve caratteristiche (che mantengono il loro andamento). Per quanto riguarda la possibilità di usare questi dispositivi come sensori di glucosio, si introduce uno studio preliminare sulla risposta di un transistor, il cui gate è stato funzionalizzato con ferrocene, alla presenza di glucosio e glucosio ossidasi, un enzima necessario al trasferimento di elettroni, nella soluzione elettrolitica, seppur con qualche difficoltà, per via della mancanza di informazioni sui parametri da utilizzare e il range in cui compiere le misure (tuttora oggetto di ricerca).

Electrochemical scanning tunnelling spectroscopy of a ferrocene-modified n-Si(111)-surface: electrolyte gating and ambipolar FET behaviour

As revealed for the first time by in situ scanning tunnelling spectroscopy (STS), ferrocene-modified Si(111) substrates show ambipolar field effect transistor (FET) behaviour upon electrolyte gating.

Polaronic metal state at the LaAlO₃/SrTiO₃ interface

Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities. The paradigm example is the interface between the two band insulators LaAlO3 and SrTiO3 that hosts a two-dimensional electron system. Apart from the mobile charge carriers, this system exhibits a range of intriguing properties such as field effect, superconductivity and ferromagnetism, whose fundamental origins are still debated. Here we use soft-X-ray angle-resolved photoelectron spectroscopy to penetrate through the LaAlO3 overlayer and access charge carriers at the buried interface. The experimental spectral function directly identifies the interface charge carriers as large polarons, emerging from coupling of charge and lattice degrees of freedom, and involving two phonons of different energy and thermal activity. This phenomenon fundamentally limits the carrier mobility and explains its puzzling drop at high temperatures.

Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth

In this paper, we show room temperature operation of a quantum well infrared photodetector (QWIP) using lateral conduction through ohmic contacts deposited at both sides of two n-doped quantum wells. To reduce the dark current due to direct conduction in the wells, we apply an electric field between the quantum wells and two pinch-off Schottky gates, in a fashion similar to a field effect device. Since the normal incidence absorption is strongly reduced in intersubband transitions in quantum wells, we first analyze the response of a detector based on quantum dots (QD). This QD device shows photocurrent signal up to 150 K when it is processed in conventional vertical detector. However, it is possible to observe room temperature signal when it is processed in a lateral structure. Finally, the room temperature photoresponse of the QWIP is demonstrated, and compared with theory. An excellent agreement between the estimated and measured characteristics of the device is found

Investigation of AlInN barrier ISFET structures with GaN capping for pH detection

The pH response of GaN/AlInN/AlN/GaN ion-sensitive field effect transistor (ISFET) on Si substrates has been characterized. We analyzed the variation of the surface potential (ΔVsp/ΔpH) and current (ΔIds/ΔpH) with solution pH in devices with the same indium content (17%, in-plane lattice-matched to GaN) and different AlInN thickness (6 nm and 10 nm), and compared with the literature. The shrinkage of the barrier, that has the effect to increase the transconductance of the device, makes the 2-dimensional electron density (2DEG) at the interface very sensitive to changes in the surface. Although the surface potential sensitivity to pH is similar in the two devices, the current change with pH (ΔIds/ΔpH), when biasing the ISFET by a Ag/AgCl reference electrode, is almost 50% higher in the device with 6 nm AlInN barrier, compared to the device with 10 nm barrier. When measuring the current response (ΔIds/ΔpH) without reference electrode, the device with thinner AlInN layer has a larger response than the thicker one, of a factor of 140%, and that current response without reference electrode is only 22% lower than its maximum response obtained using reference electrode.