Caracterização mecânica e tribológica de dois glazeadores disponíveis comercialmente e uma composição experimental

O objetivo desse estudo, in vitro, foi avaliar através de testes mecânicos e tribológicos, a aplicação de dois glazeadores disponíveis comercialmente e uma composição experimental como material de cobertura em restaurações de resina composta com relação à rugosidade superficial, à dureza e à resistência ao desgaste. Foram confeccionados 24 corpos de prova (CP) do compósito Z350XT (3M/ESPE) e divididos em 4 grupos. O grupo controle (GC) não recebeu selamento, o grupo Biscover LV (GB) recebeu aplicação do Biscover LV (Bisco), o grupo Natural Glaze (GN) recebeu aplicação do Natural Glaze (Nova DFL) e o grupo Experimental (GE) recebeu aplicação de um glazeador experimental contendo nanopartículas (1% em peso). Posteriormente, os CP foram submetidos à análise da rugosidade superficial utilizando um perfilômetro e avaliação da dureza através de um nanoindentador, que fornece também o módulo elástico do material. Em seguida, os CP foram submetidos ao teste de desgaste linear alternado, durante 15.000 ciclos, com carga de 5N, em água destilada. A profundidade máxima de desgaste foi avaliada através de um perfilômetro. A análise dos dados relativos à rugosidade superficial (m) foi realizada utilizando ANOVA/Duncan (p-valor = 0,000). As médias e desvio padrão foram: GC-0,12(0,01); GB-0,06(0,01); GN-0,13(0,02); GE-0,13(0,01). A análise da dureza (GPa) e módulo elástico (GPa) foram avaliados aplicando o teste não-paramétrico de Kruskal-Wallis. As médias e desvio padrão para dureza foram: GC-1,10(0,24); GB-0,31(0,004); GN-0,08(0,004); GE-0,12(0,008) para carga de 1,25mN; GC-1,08(0,139); GB-0,32(0,004); GN-0,08(0,003); GE-0,13(0,006) para carga de 2,5mN; GC-1,10(0,101); GB-0,33(0,003); GN-0,09(0,002); GE-0,13(0,056) para carga de 5,0mN. As médias e desvio padrão para módulo elástico foram: GC-17,71(1,666); GB-5,44(0,084); GN-3,484(0,114); GE-4,55(0,178) para carga de 1,25mN; GC-17,5(1,449); GB-5,18(0,065); GN-3,38(0,078); GE-4,55(0,12) para carga de 2,5mN; GC-17,69(1,793); GB-5,04(0,041); GN-3,63(0,066); GE-4,85(0,104) para carga de 5,0mN. A análise dos dados relativos à profundidade de desgaste (m) foi realizada utilizando ANOVA/Dunnett (p-valor = 0,000). As médias e desvio padrão foram: GC-12,51(0,89); GB-0,59(0,07); GN-1,41(0,12); GE-1,84(0,18). A partir dos resultados apresentados pode-se concluir que apenas o Biscover LV foi capaz de reduzir a rugosidade superficial da resina composta testada. Os demais, Natural Glaze e Experimental, não alteraram a rugosidade superficial e foram estatisticamente semelhantes entre si e com o grupo controle. Todos os glazeadores testados reduziram a dureza e o módulo elástico da resina composta quando comparados com o grupo controle, diferindo entre si, apresentando uma ordem crescente de dureza e módulo elástico (Natural Glaze < Experimental < Biscover < Controle). Todos os glazeadores testados foram capazes de reduzir o desgaste da resina composta, quando comparados com o grupo controle, diferindo entre si, apresentado uma ordem crescente de desgaste (Biscover < Natural Glaze < Experimental < Controle).

Investigations of current limiting properties of the MgB2 wires subjected to pulse overcurrents in the benchtop tester

A laboratory scale desktop test system including a cryogenic system, an AC pulse generation system and a real time data acquisition program in LabView/DAQmx, has been developed to evaluate the quench properties of MgB 2 wires as an element in a superconducting fault current limiter under pulse overcurrents at 25K in self-field conditions. The MgB2 samples started from a superconducting state and demonstrated good current limiting properties characterized by a fast transition to the normal state during the first half of the cycle and a continuously limiting effect in the subsequent cycles without burnouts. The experimental and numerical simulation results on the quench behaviour indicate the feasibility of using MgB 2 for future superconducting fault current limiter (SFCL) applications. © IOP Publishing Ltd.

Effects of indium ion implantation on the total dose hardness of fully depleted SOI NMOSFET

In this work, we investigate the effects of the indium ion implantation towards the back-channel interface on the total dose hardness of the n-channel SOI MOSFET. The results show that the indium implant has slight impact on the normal threshold voltage while preserving low leakage current after irradiation. The advantage is attributed to the narrow as-implanted and postanneal profile of the indium implantation. Two-dimensional simulations have been used to understand the physical mechanisms of the effects.

Silicon-on-insulating multi-layers for total-dose irradiation hardness

Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal-oxide-semiconductor (PMOS) transistors and metal-semiconductor-insulator-semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3 x 10(5) rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07 V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials.

Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation

In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers to improve the radiation hardness of the SIMOX material. The experiments of secondary ion mass spectroscopy (SIMS) analysis showed that some nitrogen ions were distributed in the buried oxide layers and some others were collected at the Si/SiO2 interface after annealing. The results of electron paramagnetic resonance (EPR) suggested the density of the defects in the nitrided samples changed with different nitrogen ion implantation energies. Semiconductor-insulator-semiconductor (SIS) capacitors were made on the materials, and capacitance-voltage (C-V) measurements were carried out to confirm the results. The super total dose radiation tolerance of the materials was verified by the small increase of the drain leakage current of the metal-oxide-semiconductor field effect transistor with n-channel (NMOSFETs) fabricated on the materials before and after total dose irradiation. The optimum implantation energy was also determined.

Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation

An investigation of hardening the buried oxides (BOX) in separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers to total-dose irradiation has been made by implanting nitrogen into the BOX layers with a constant dose at different implantation energies. The total-dose radiation hardness of the BOX layers is characterized by the high frequency capacitance-voltage (C-V) technique. The experimental results show that the implantation of nitrogen into the BOX layers can increase the BOX hardness to total-dose irradiation. Particularly, the implantation energy of nitrogen ions plays an important role in improving the radiation hardness of the BOX layers. The optimized implantation energy being used for a nitrogen dose, the hardness of BOX can be considerably improved. In addition, the C-V results show that there are differences between the BOX capacitances due to the different nitrogen implantation energies.