新疆紫草细胞悬浮培养生产紫草宁衍生物的动态测定机理化因子调控

本文在本实验室提供的新疆紫草愈伤组织高产系A1的基础上，采用二步培养法，进行摇瓶悬浮培养，分别在生长及生产培养基中测定了细胞生长，次生产物合成，培养基的C源（蔗糖）消耗，溶氧，电导率和pH值的动态变化曲线，确定了各动态曲线之间的关系，为进一步的放大培养提供了参考依据。同时，还测定了与细胞生长密切相关的过氧化物酶及与产物合成密切相关的苯丙氨酸解氨酶(PAL)的活性的动态变化曲线，进一步将宏观参数的动态变化与微观参数的动态变化联系起来。 本文还对不同理化因子对生产培养基中悬浮培养的细胞的生长及紫草宁衍生物合成的影响进行了研究。结果表明：过高或过低的供氧水平均不利于细胞的生长及产物的合成;C源及N源有较好的协同作用，适当地提高C源及N源的水平能明显提高紫草宁衍生物的产量：接种前往培养基里加入一定量的前体苯丙氨酸( Phe)，能明显提高紫草宁衍生物的产量，而在培养中期添加则有一定的负致应;一定量的拜土及琼脂(agar)的添加，对产物的合成均具有正效应，并且作用大小和细胞的生理状态有关。高密度培养的研究表明，在合适的接种量和培养基浓度下，适当提高溶氧，较大幅度地提高产量是有可能的，这还有待于进一步的研究验证。

稀土元素生物效应的蛋白质组学研究

蛋白质组学是研究细胞内全部蛋白的动态表达及其相互关系的新兴学科，是功能基因组学研究的重要组成部分和战略制高点，广泛应用于生命科学的各个领域，研究对象涵盖微生物、动物和植物等。 　　稀土元素（rare earth elements），亦称镧系元素（lanthanides），是性质相似的15种金属元素。随着稀土元素在工业、农牧业和医疗等领域的应用日益深入，它们对生物体的作用机制亟待研究。生物固氮作用为生命世界提供75%的绿色氮源，根瘤菌是重要的固氮微生物，具有基因组结构简单、培养周期短等特点。酿酒酵母是与人类关系最密切的一种酵母，不仅因为传统上其用于制作食品及酿酒，而且是现代分子生物学和细胞生物学中的真核模式生物。为了全面地了解稀土元素对细胞的作用，我们运用高分辨率的蛋白质双向电泳分离技术和高通量的蛋白质质谱分析手段以及生物信息学等方法，分析了稀土元素钆（Gadolinium，Gd）在原核生物费氏中华根瘤菌（Sinorhizobium fredii）USDA205和真核生物酿酒酵母（Saccharomyces cerevisiae）YM4271的生物效应。 　　结果表明，经1mM Gd(NO3)3处理12小时后，费氏中华根瘤菌USDA205中 22个蛋白质表达有差异。这些蛋白质可根据功能分为8类，包括转运蛋白、胁迫相关蛋白、代谢相关蛋白等。其中13个蛋白质表达量增加，9个蛋白质表达量下降。膜蛋白在差异蛋白中占有很大比重。另外，我们分析了不同浓度的钆处理后蛋白质表达的变化情况，发现蛋白质组的变化是与处理浓度密切相关的。研究中还发现同种浓度的钆与另一种稀土元素铒（Erbium，Er）相比，离子半径较小的铒离子对根瘤菌的抑制作用更加明显。 　　比较不同浓度的钆对酿酒酵母YM4271的影响，发现酵母对稀土元素的反应不及根瘤菌敏感，对数生长初期的酵母经钆处理12小时或24小时后均无显著变化。 　　本研究首次用蛋白质组学的方法研究稀土元素对微生物的作用，鉴定了一些有价值的蛋白质，并得到了它们的表达特点和相关数据，为更好地理解稀土元素的生物效应提供了有力的分子生物学证据。 　　

八种稀土金属配合物和铂配合物抗HIV 活性的研究

　为了寻找治疗艾滋病的新药,研究了8 种稀土金属(镧、铒、镝、钆、镨、镱、钐、钕) 配合物和铂 配合物的抗HIV 活性。我们以C8166 细胞系为指示细胞,测定样品对HIV - 1IIIB诱导的细胞合胞体形成 的抑制作用,并以MTT方法测定它们对细胞存活率的影响,以研究稀土和铂配合物对细胞的毒性。根 据公式,计算出其CC50和EC50值,并进一步计算出其TI 值。结果表明,镧配合物、钐配合物和铂配合物 的EC50值分别为0. 006μg/ ml 、74. 28μg/ ml 和21. 54μg/ ml ,它们的治疗指数分别为63、21 和45 ,具有一定的 抗HIV - 1 活性。其它的配合物具有很低或者不具有抗HIV - 1 活性。

Electrical properties and electroluminescence of 4H-SiC p-n junction diodes

Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal air-cooled quartz tube at around 1500 degreesC and 1.33 x 10(4) Pa by employing SiH4 + C2H4 + H-2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm(2) (.) V-1 (.) s(-1) with a carrier concentration of similar to 10(16) cm(-3) and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 x 10(21) cm(-3) with a mobility of 0.75 cm(2) (.) V-1 (.) s(-1). SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Al-doped 4H-SiC substrates. The C - V characteristics of the diodes were linear in the 1/C-3 - V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 degreesC, which provides a potential for high-temperature applications.

Growth of ZnO single crystal by chemical vapor transport method

ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.

Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template

The surface morphology of GaN grown by MOCVD on GaN/Si template was studied. Rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied. The formation of rough morphology is possibly related to Ga-Si alloy produced due to poor thermal stability of template at high temperature. The deep pinhole defects generated are deep down to the surface of MBE-grown GaN/Si template. The stress originated from the large thermal expansion coefficient difference between GaN and Si may be related to the formation of the pinhole defects. The surface morphology of the GaN can be improved by optimizing the GaN/Si template and decreasing the growth temperature.

Growth and characterization of semi-insulating GaN films grown by MOCVD

High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results.

In-situ synthesis of AlN powders and composite AlN powders with yttrium addition

Using Al-Mg and Al-Mg-Y alloys as raw materials and nitrogen as gas reactants, AIN powders and composite AIN powders by in-situ synthesis method were prepared. AIN lumps prepared by the nitriding of Al-Mg and Al-Mg-Y alloys have porous microstructure, which is favorable for pulverization. They have high purity, containing 1.23 % (mass fraction) oxygen impurity, and consisted of AIN single phase . The average particle size of AIN powders is 6.78 mum. Composite AlN powders consist of AlN phases and rare, earth oxide Y2O3 phase. The distribution of particle size of AIN powders shows two peaks. In view, of packing factor, AIN powders with such size distribution can easily be sintered to high density.

Growth of ZnO single crystal by chemical vapor transport method

ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.

Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template

The surface morphology of GaN grown by MOCVD on GaN/Si template was studied. Rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied. The formation of rough morphology is possibly related to Ga-Si alloy produced due to poor thermal stability of template at high temperature. The deep pinhole defects generated are deep down to the surface of MBE-grown GaN/Si template. The stress originated from the large thermal expansion coefficient difference between GaN and Si may be related to the formation of the pinhole defects. The surface morphology of the GaN can be improved by optimizing the GaN/Si template and decreasing the growth temperature.

Growth and characterization of semi-insulating GaN films grown by MOCVD

High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results.