Random distributed feedback fiber laser of ultimate efficiency

We demonstrate a random fiber laser of ultimate efficiency. More than 2 Watts are generated from 0.5W of pump excess over the generation threshold. At higher power, an optical efficiency corresponds to the quantum limit.

The Information-analytical System for Diagnostics of Aircraft Navigation Units

The operation of technical processes requires increasingly advanced supervision and fault diagnostics to improve reliability and safety. This paper gives an introduction to the field of fault detection and diagnostics and has short methods classification. Growth of complexity and functional importance of inertial navigation systems leads to high losses at the equipment refusals. The paper is devoted to the INS diagnostics system development, allowing identifying the cause of malfunction. The practical realization of this system concerns a software package, performing a set of multidimensional information analysis. The project consists of three parts: subsystem for analyzing, subsystem for data collection and universal interface for open architecture realization. For a diagnostics improving in small analyzing samples new approaches based on pattern recognition algorithms voting and taking into account correlations between target and input parameters will be applied. The system now is at the development stage.

The Distributed System of Databases on Properties of Inorganic Substances and Materials

The principles of organization of the distributed system of databases on properties of inorganic substances and materials based on the use of a special reference database are considered. The last includes not only information on a site of the data about the certain substance in other databases but also brief information on the most widespread properties of inorganic substances. The proposed principles were successfully realized at the creation of the distributed system of databases on properties of inorganic compounds developed by A.A.Baikov Institute of Metallurgy and Materials Science of the Russian Academy of Sciences.

Experimental and theoretical study of longitudinal power distribution in a random DFB fiber laser

We have measured the longitudinal power distribution inside a random distributed feedback Raman fiber laser. The observed distribution has a sharp maximum whose position depends on pump power. The spatial distribution profiles are different for the first and the second Stokes waves. Both analytic solution and results of direct numerical modeling are in excellent agreement with experimental observations. © 2012 Optical Society of America.

Temperature-dependent internal quantum efficiency of blue high-brightness light-emitting diodes

Internal quantum efficiency (IQE) of a blue high-brightness InGaN/GaN light-emitting diode (LED) was evaluated from the external quantum efficiency measured as a function of current at various temperatures ranged between 13 and 440 K. Processing the data with a novel evaluation procedure based on the ABC-model, we have determined the temperature-dependent IQE of the LED structure and light extraction efficiency of the LED chip. Separate evaluation of these parameters is helpful for further optimization of the heterostructure and chip designs. The data obtained enable making a guess on the temperature dependence of the radiative and Auger recombination coefficients, which may be important for identification of dominant mechanisms responsible for the efficiency droop in III-nitride LEDs. Thermal degradation of the LED performance in terms of the emission efficiency is also considered.

Anderson localization in synthetic photonic lattices

We experimentally demonstrate Anderson localization for optical pulses in time domain, using a photonic mesh lattice implemented with coupled optical fiber loops. We also discuss interplay of photonic band-gaps and disorder in such lattices. © OSA 2015.

Novel evaluation procedure for internal and extraction efficiency of high-power blue LEDs

Internal quantum efficiency (IQE) of a high-brightness blue LED has been evaluated from the external quantum efficiency measured as a function of current at room temperature. Processing the data with a novel evaluation procedure based on the ABC-model, we have determined separately IQE of the LED structure and light extraction efficiency (LEE) of UX:3 chip. Full text Nowadays, understanding of LED efficiency behavior at high currents is quite critical to find ways for further improve­ment of III-nitride LED performance [1]. External quantum ef­ficiency ηe (EQE) provides integral information on the recom­bination and photon emission processes in LEDs. Meanwhile EQE is the product of IQE ηi and LEE ηext at negligible car­rier leakage from the active region. Separate determination of IQE and LEE would be much more helpful, providing correla­tion between these parameters and specific epi-structure and chip design. In this paper, we extend the approach of [2,3] to the whole range of the current/optical power variation, provid­ing an express tool for separate evaluation of IQE and LEE. We studied an InGaN-based LED fabricated by Osram OS. LED structure grown by MOCVD on sapphire substrate was processed as UX:3 chip and mounted into the Golden Dragon package without molding. EQE was measured with Labsphere CDS-600 spectrometer. Plotting EQE versus output power P and finding the power Pm corresponding to EQE maximum ηm enables comparing the measurements with the analytical rela­tionships ηi = Q/(Q+p1/2+p-1/2) ,p = P/Pm , and Q = B/(AC) 1/2 where A, Band C are recombination constants [4]. As a result, maximum IQE value equal to QI(Q+2) can be found from the ratio ηm/ηe plotted as a function of p1/2 +p1-1/2 (see Fig.la) and then LEE calculated as ηext = ηm (Q+2)/Q . Experimental EQE as a function of normalized optical power p is shown in Fig. 1 b along with the analytical approximation based on the ABC­model. The approximation fits perfectly the measurements in the range of the optical power (or operating current) variation by eight orders of magnitude. In conclusion, new express method for separate evaluation of IQE and LEE of III-nitride LEDs is suggested and applied to characterization of a high-brightness blue LED. With this method, we obtained LEE from the free chip surface to the air as 69.8% and IQE as 85.7% at the maximum and 65.2% at the operation current 350 rnA. [I] G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, "Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies," 1. AppL Phys., vol. 114, no. 7, pp. 071101, Aug., 2013. [2] C. van Opdorp and G. W. 't Hooft, "Method for determining effective non radiative lifetime and leakage losses in double-heterostructure las­ers," 1. AppL Phys., vol. 52, no. 6, pp. 3827-3839, Feb., 1981. [3] M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, U. Zehnder, and B. Hahn, "A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes," 1. AppL Phys., vol. 106, no. II, pp. 114508, Dec., 2009. [4] Qi Dai, Qifeng Shan, ling Wang, S. Chhajed, laehee Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, Min-Ho Kim, and Yongjo Park, "Carrier recombination mechanisms and efficiency droop in GalnN/GaN light-emitting diodes," App/. Phys. Leu., vol. 97, no. 13, pp. 133507, Sept., 2010. © 2014 IEEE.

Individual variability analysis of fluorescence parameters measured in skin with different levels of nutritive blood flow

Fluorescence spectroscopy has recently become more common in clinical medicine. However, there are still many unresolved issues related to the methodology and implementation of instruments with this technology. In this study, we aimed to assess individual variability of fluorescence parameters of endogenous markers (NADH, FAD, etc.) measured by fluorescent spectroscopy (FS) in situ and to analyse the factors that lead to a significant scatter of results. Most studied fluorophores have an acceptable scatter of values (mostly up to 30%) for diagnostic purposes. Here we provide evidence that the level of blood volume in tissue impacts FS data with a significant inverse correlation. The distribution function of the fluorescence intensity and the fluorescent contrast coefficient values are a function of the normal distribution for most of the studied fluorophores and the redox ratio. The effects of various physiological (different content of skin melanin) and technical (characteristics of optical filters) factors on the measurement results were additionally studied.The data on the variability of the measurement results in FS should be considered when interpreting the diagnostic parameters, as well as when developing new algorithms for data processing and FS devices.

Spectral width optimization in random DFB fiber laser

Lasers with random distributed feedback (DFB) owing to Rayleigh scattering in optical fibers [1] have attracted a great interest: a number of papers demonstrating new laser schemes and applications have been proposed [2-7] recently. Moreover, the generation output power and, more generally, generation power distribution could be described both analytically and numerically within simple balance models [8-9]. However, spectral properties of random DFB fiber lasers are not studied except some attempt made in [10]. Generation spectrum of random DFB fiber laser is quite broad (more than 1 nm), and physical mechanisms of its formation and broadening are still unclear. There is no any practical solution up to date to minimize the generation spectrum width. Here we experimentally show the way to minimize the generation spectral width. © 2013 IEEE.

SO(2,1)-Invariant Double Integral Transforms and Formulas for the Whittaker Functions

MSC 2010: 33C15, 33C05, 33C45, 65R10, 20C40

Power optimization of random distributed feedback fiber lasers

We present a comprehensive study of power output characteristics of random distributed feedback Raman fiber lasers. The calculated optimal slope efficiency of the backward wave generation in the one-arm configuration is shown to be as high as ∼90% for 1 W threshold. Nevertheless, in real applications a presence of a small reflection at fiber ends can appreciably deteriorate the power performance. The developed numerical model well describes the experimental data. © 2012 Optical Society of America.

Power and spectral optimization of random distributed feedback fiber lasers

We present the optimization of power and spectral performances of the random DFB fiber laser using the balance equation set. The numerical results are in good in agreement with experiments. © 2012 OSA.

Longitudinal power distribution in a random DFB fiber laser

We have measured the longitudinal power distribution inside a random distributed feedback fiber laser. Both analytic solution and results of direct numerical modeling are in excellent agreement with experimental observations. © 2012 OSA.

AlGaInP red-emitting light emitting diode under extremely high pulsed pumping

Efficiency of commercial 620 nm InAlGaP Golden Dragon-cased high-power LEDs has been studied under extremely high pump current density up to 4.5 kA/cm2 and pulse duration from microsecond down to sub-nanosecond range. No efficiency decrease and negligible red shift of the emission wavelength is observed in the whole range of drive currents at nanosecond-range pulses with duty cycles well below 1%. Analysis of the pulse-duration dependence of the LED efficiency and emission spectrum suggests the active region overheating to be the major mechanism of the LED efficiency reduction at higher pumping, dominating over the electron overflow and Auger recombination.

Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs

Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.