Laser-diode-pumped Cr4+,Nd3+: YAG with self-Q-switched laser output of 1.4 W

By use of a laser diode as a pump source, a self-Q-switched laser from a Cr,Nd:YAG crystal is demonstrated. The output Q-switched traces are very stable, the threshold pump power is 3.5 W, the pulse duration is 50 ns, and the slope efficiency is as high as 20%. In addition, the pulse width remains constant while the pulse repetition rate Varies with pump power. (C) 2000 Optical Society of America OCIS codes: 140.0140, 140.2020, 140.3380, 140.3480, 140.3540, 140.3580.

Synthesis, applications and reactivity of 1,2,3-triazolium salts

276 p.

Optimum design of 1.4KV trench IGBTs - The next generation of high power switching devices

The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next generation of power semiconductor devices with wide applications ranging from motor control (1-4 kV) to HVDC (6.5 kV). Here we present for the first time an optimum design of a 1.4kV Trench IGBT using a new, fully integrated optimisation system comprising process and device simulators and the RSM optimiser. The use of this new TCAD system has contributed largely to realizing devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4kV Trench IGBTs which are in excellent agreement with the TCAD predictions are reported.

Electro-optic modulation of 1.5μm light in an active InGaAsP/InP quantum well waveguide

We report an InGaAsP/InP phase modulator operating in the 1.5μm wavelength band. Phase modulation of 7.5°/mA and 1.7°/mA of injected current have been measured for TE and TM polarised light respectively at a signal wavelength of 1.52 μm.