884 resultados para High gain femtosecond peta watt Ti:sapphire amplifier


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介绍了近几年迅速发展的一种新型激光介质——透明Nd:YAG多晶陶瓷的发展状况,对比分析了多晶陶瓷与单晶的光谱特性、激光特性和连续实验研究情况。并对钛宝石激光器调谐至808nm,端面抽运Nd:YAG陶瓷被动调Q全固态激光器的脉冲运转进行了较为详细的理论分析和实验研究。采用初始透射率为90%的Cr^4+:YAG可饱和吸收晶体,被动调Q的阈值功率为119mW,当端面抽运功率为465mW时,获得波长为1064nm,脉宽为16ns,重复频率为18.18kHz,单脉冲能量为3.4μJ,平均输出功率为61mW的稳定调Q

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通过热沉积系数研究在激光提取条件下掺杂原子分数为1.0%的Nd:YAG陶瓷激光器中热沉积问题.热沉积系数定义为热沉积功率与激光器输出功率之比.在理论分析基础上,通过测量激光器斜率效率来间接测定热沉积系数,实验测定的热沉积系数值为0.63.建立激光提取条件下Nd:YAG陶瓷发热模型,讨论了影响热沉积系数的主要因素.结果表明:热沉积系数对Nd:YAG陶瓷的辐射量子效率、交叠效率以及激光提取效率的变化非常敏感.为有效减少介质内热沉积,在激光器优化设计中交叠效率和激光提取效率是需要着重考虑的参数.所得结果可为进一

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In this paper, a highly efficient Ti:sapphire end-pumped 1 at.-% Nd:YAG ceramic laser that is comparable in efficiency with Nd:YAG single crystal lasers has been developed. Optical absorption and emission spectra for Nd:YAG ceramics have been measured. With 673-mW pumping, 295-mW laser output at 1064 nm has been obtained. The laser threshold is only 13 mW. Deducted the transmitted light, the corresponding optical-to-optical conversion efficiency is 58.4%. The lasing characteristics of Nd:YAG ceramic are nearly equal to those of Nd:YAG single crystal.

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氟磷酸盐玻璃系统南于其特殊的光学性能和优良的机做与热学性能一直是特种光学玻璃材料领域的一个研究热点。总结了氟磷酸盐玻璃的分类及玻璃组分与其结构的关系,综述了氟磷玻璃在光学器件、高能高功率激光玻璃、光纤激光器、光纤放大器及上转换发光基质材料等领域上的应用,并对其未来的发展进行了展望。

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研究了一种新型掺Er^3+碲酸盐玻璃的光谱性质;应用Judd-Ofelt理论计算了碲酸盐玻璃中Er^3+离子的强度参数Ω(Ω2=4.79×10^-20cm^2,Ω4=1.52×10^-20cm^2,Ω6=0.66×10^-20cm^2),计算了离子的自发跃迁概率,荧光分支比;应用McCumber理论计算了Er^3+的受激发射截面(σe=10.40×10^-21cm^2),Er^3+离子^4I13/2→^4I15/2发射谱的荧光半高宽(FWHM=65.5nm)及各能级的荧光寿命(^4I13/2能级为τrad

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By using a continuous-wave Ti:sapphire laser as a pumping source, we demonstrated a passively Q-switched Yb:YAG laser at room temperature with Cr4+:YAG as the saturable absorber. We achieved an average output power of as much as 55 mW at 1.03 mum with a pulse width (FWHM) as short as 350 ns. The initial transmission of the Cr4+:YAG has an effect on the pulse duration (FWHM) and the repetition rate of the Yb:YAG passively Q-switched laser. The Yb:YAG crystal can be a most promising passively Q-switched laser crystal for compact, efficient, solid-state lasers. (C) 2001 Optical Society of America.

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白宝石高温强度的降低主要是由于c轴方向受到压应力时产生r面双晶所引起的。高温强度的下降导致其抗热震性能降低,从而限制了白宝石晶体作为红外窗口和头罩材料的应用。白宝石晶体的强化主要以消除双晶核以及控制双晶的扩展来实现。本文分析了影响白宝石强度的主要因素,在此基础上对目前白宝石晶体强化的方法进行了总结和分析。

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根据钛宝石激光器的要求设计了性能优良的两种负色散镜(NDM1和NDM2)。NDM1同时引入啁啾效应和GT效应产生大的群延迟色散量以减少光在负色散镜上的反射次数。NDM2仅引入GT效应产生较小的群延迟色散以补偿腔内自相位调制带来的部分啁啾。选用离子束溅射法制备了这两种负色散镜。用分光光度计测试了它们的透射率。结果表明,所制备的负色散镜的性能与设计性能非常接近。使用这两种负色散镜进行掺钛蓝宝石激光谐振腔内色散补偿实现了飞秒脉冲锁模,获得了15fs的超短脉冲。

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Nesta dissertação é mostrada experimentalmente a existência de modos ressonantes em servomotores de corrente contínua sem núcleo de ferro. Até onde se sabe, não já publicações ou documentos técnicos de fabricantes que relatam esse efeito neste tipo de motor. Foi observado também que a frequência da ressonância é variável e que possivelmente depende da temperatura interna do motor. Conforme e mostrado em simulações técnicas tradicionais para o controle de motores podem não ser eficazes para lidar com esses modos ressonantes. Com o objetivo de amortecer a ressonância e obter o controle de velocidade e posição desses motores, são desenvolvidos controladores por modo deslizante baseados em funções de chaveamento obtidas por observadores de alto ganho. Esse controle e robusto a incertezas paramétricas e perturbações. Com o auxílio de simulações são mostrados os pontos fortes e limitações de cada um dos controladores.

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The global stabilization of a class of feedforward systems having an exponentially unstable Jacobian linearization is achieved by a high-gain feedback saturated at a low level. The control law forces the derivatives of the state variables to small values along the closed-loop trajectories. This "slow control" design is illustrated with a benchmark example and its limitations are emphasized. © 1999 Elsevier Science B.V. All rights reserved.

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In this we have looked at the concept of introducing carbon nanotubes on the surfaces of the microstrip patch antennas. We examined the performance improvements in a patch antenna through finite difference time domain simulations to increase the efficiency of the antenna. The results suggest that carbon nanotubes lead to a higher gain due to their electrical properties. A high gain antenna with low power requirements resulted in achieving a higher overall bandwidth. The designed antenna's gain, bandwidth and directivity are analyzed before and after introducing carbon nanotubes. © 2013 IEEE.

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We present a novel 800-nm Bragg-mirror-based semiconductor saturable absorption mirror with low temperature and surface state hybrid absorber, with which we can realize the passive soliton mode locking of a Ti:sapphire laser pumped by 532-nm green laser which produces pulses as short as 37 fs. The reflection bandwidth of the mirror is 30 nm and the pulse frequency is 107 MHz. The average output power is 1.1 W at the pump power of 7.6 W.

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Improved electrical properties of AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures grown by metalorganic chemical vapor deposition (MOCVD) were achieved through increasing the Al mole fraction in the AlGaN barrier layers. An average sheet resistance of 326.6 Omega/sq and a good resistance uniformity of 98% were obtained for a 2-inch Al0.38Ga0 62N/GaN HEMT structure. The surface morphology of AlxGa1-xN/GaN HEMT structures strongly correlates with the Al content. More defects were formed with increasing Al content due to the increase of tensile strain, which limits further reduction of the sheet resistance. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

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A 40-GHz wavelength tunable mode-locked fiber ring laser based oil cross-gain modulation in a semiconductor optical amplifier (SOA) is presented. Pulse trains with a pulse width of 10.5 ps at 40-GHz repetition frequency are obtained. The laser operates with almost 40-nm tuning range. The relationship between the key laser parameters and the output pulse characteristics is analyzed experimentally.

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We demonstrate hybrid vertical architecture transistors that operate like metal-base transistors, using n-type silicon as the collector, sulfonated polyaniline as the base, and C-60 fullerene as the emitter. Electrical measurements suggest that the sulfonated polyaniline base effectively screens the emitter from electric field variations occurring in the collector leading to the metal-base transistor behavior.