Photoluminescence from ZnS1-xTex alloys under hydrostatic pressure

ZnS1-xTex (0.02less than or equal toxless than or equal to0.3) alloys are studied by photoluminescence under hydrostatic pressure at room temperature. Only a wide emission band is observed for each sample. Its peak energy is much lower than the corresponding band gap of alloys. These bands are ascribed to the radiative annihilation of excitons bound at Te-n(ngreater than or equal to2) isoelectronic centers. The pressure coefficients of the emission bands are smaller than those of alloy band gaps from 48% to 7%. The difference of the pressure coefficient of the emission band and the band gap increases when the binding energy of Te-n centers decreases. It seems contrary to our expectation and needs further analysis. The integrated intensities of emission bands decrease with increasing pressure due to the decreasing of the absorption coefficient associated with the Te-n centers under pressure. According to this model the Stokes shifts between the emission and absorption bands of the Te-n centers are calculated, which decrease with the increasing Te composition in alloys.

Variational calculations of ionized-donor-bound excitons in GaAs-AlxGa1-xAs quantum wells

Using a two-parameter wave function, we calculate variationally the binding energy of an exciton bound to an ionized donor impurity (D+,X) in GaAs-AlxGa1-xAs quantum wells for the values of the well width from 10 to 300 Angstrom, when the dopant is located in the center of the well and at the edge of the well. The theoretical results confirm that the previous experimental speculation proposed by Reynolds tit al. [Phys. Rev. B 40, 6210 (1989)] is the binding energy of D+,X for the dopant at the edge of the well. in addition, we also calculate the center-of-mass wave function of the exciton and the average interparticle distances. The results are discussed in detail.

Quantum-confinement-effect-driven type-I-type-II transition in inhomogeneous quantum dot structures

We investigate the electronic structures of the inhomogeneous quantum dots within the framework of the effective mass theory. The results show that the energies of electron and hole states depend sensitively on the relative magnitude 77 of the core radius to the capped quantum dot radius. The spatial distribution of the electrons and holes vary significantly when the ratio eta changes. A quantum-confinement-driven type-II-type-I transition is found in GaAs/AlxGa1-xAs-capped quantum dot structures. The phase diagram is obtained for different capped quantum dot radii. The ground-state exciton binding energy shows a highly nonlinear dependence on the innner structures of inhomogeneous quantum dots, which originates from the redistribution of the electron and hole wave functions.

Quantum-confined Stark effects of exciton states in V-shaped GaAs/AlxGa1-xAs quantum wires

Quantum-confined Stark effects are investigated theoretically in GaAs/AlxGa1-xAs quantum wires formed in V-grooved structures. The electronic structures of the V-shaped quantum wires are calculated within the effective mass envelope function theory in the presence of electric field. The binding energies of excitons are also studied by two-dimensional Fourier transformation and variational method. The blue Stark shifts are found when the electric field is applied in the growth direction. A possible mechanism in which the blueshifts of photoluminescence peaks are attributed to two factors, one factor comes from the asymmetric structure of quantum wire along the electric field and another factor arises from the electric-field-induced change of the Coulomb interaction. The numerical results are compared with the recent experiment measurement.

Optical properties of Ge self-organized quantum dots in Si

Small-size, high-density, and vertical-ordering Ge quantum dots are observed in strained Si/Ge short-period superlattices grown on Si(001) at low growth temperature by molecular-beam epitaxy. The photoluminescence (PL) peak position, the strong PL at room temperature, and the high exciton binding energy suggest an indirect-to-direct conversion of the Ge quantum dots. This conversion is in good agreement with the theoretical prediction. The characteristic of absorption directly indicates this conversion. The tunneling of carriers between these quantum dots is also observed. [S0163-1829(98)03515-2].

Exciton states in isolated quantum wires

The exciton states in isolated and semi-isolated quantum wires are studied. It is found that the image charges have a large effect on the effective Coulomb potential in wires. For the isolated wire the effective potential approaches the Coulomb potential in vacuum at large z distance. For the semi-isolated wire the effective potential is intermediate between the Coulomb potential in vacuum and the screened Coulomb potential at large distance. The exciton binding energy in the isolated wire is about ten times larger than that in the quantum well, and that in the semi-isolated wire is also intermediate between those in the isolated wire and in the quantum well. When the lateral width increases the binding energy decreases further, and approaches that in the quantum well. The real valence-band structure is taken into account, the exciton wave functions of the ground state in the zero-order approximation are given, and the reduced mass is calculated. The effect of the coupling between the ground and excited states are considered by the degenerate perturbation method, and it is found the coupling effect is small compared to the binding energy.

A RESONANT RAMAN-STUDY ON PHONONS IN GAINAS/ALINAS MULTIPLE-QUANTUM WELLS

The LO phonon modes in the barrier layers of a GaInAs/AlInAs multiple quantum well structure are investigated by resonance Raman scattering (RRS), the excitation laser photon energy tuned to resonate with the above barrier interband transition energy. The resonance enhancement of LO phonon peaks are shown to be caused by Frohlich electron-phonon interaction. The pressure-dependent profiles for both AlAs-like (LO(2) mode) and InAs-like (LO(1) mode) Raman peak intensities are well fitted by the Gaussian lineshape. The shift between these two profiles can be explained by the outgoing RRS mechanism, providing information on the pressure-induced shift of the excitonic transition energy. The amplitude ratios of the two profiles are close to 1, showing a well defined two-mode behavior and the nearly equal polarizability for Al-As and In-As bonds in AlInAs alloy.

L-shell x-ray yields and production cross sections of Zr and Mo bombarded by slow highly charged Ar16+ ions

The L-shell x-ray yields of Zr and Mo bombarded by slow Ar16+ ions are measured. The energy of the Ar16+ ions ranges from about 150keV to 350keV. The L-shell x-ray production cross sections of Zr and Mo are extracted from these yields data. The explanation of these experimental results is in the framework of the adiabatic directionization and the binding energy modified BEA approximation. We consider, in the slow asymmetric collisions such as Ar and Mo/Zr, the transient united atoms (UA) are formed during the ion-surface interaction and the direct-ionization is the main mechanism for the inner-shell vacancy production. Generally, the theoretical results are in good agreement with the experimental data.

Effect of pentaquark Theta(+) on the equation of state of nuclear matter

Assuming Theta(+) interacts with nucleon or Theta(+) by exchanging isoscalar mesons sigma and omega, the equation of state of {p, n, Theta(+)} and possible metastable state are studied in the framwork of the density dependent relativistic hadron field theory(DDRH). The ratio of the proton isospin to the neutron isospin with different baryon densities and the effect of the Theta(+) component on the binding energy per baryon of the system are also discussed. It is shown that when the binding energy per baryon of the system takes the maximal value, Theta(+) might be bound in the nuclear matter.

Pb isotope shifts in the relativistic mean field theory

The ground state properties of the Pb isotopic are studied by using the axially deformed relativistic mean field (RMF) calculation with the parameter set TM1. The pairing correlation is treated by the BCS method and the isospin dependent pairing force is used. The 'blocking' method is used to deal with unpaired nucleons. The theoretical results show that the relativistic mean field theory with non-linear self-interactions of mesons provides a good description of the binding energy and neutron separation energy. The present paper focus on the physical mechanism of the Pb isotope shifts.

Theoretical study on properties of new isotope (265)Bh

The properties of nuclei belonging to the newly observed a-decay chain starting from (265)Bh have been studied. The axially deformed relativistic mean-field calculation with the force NL-Z2 has been performed in the blocked BCS approximation. Some ground state properties such as binding energies, deformations, spins, and parities, as well as Q-values of the alpha-decay for this decay chain have been calculated and compared with known experimental data. Good agreement is found. The single-particle spectrum of the nucleus (265)Bh is studied and some new magic numbers are found, while the magnitudes of the shell gaps in superheavy nuclei are much smaller than those of nuclei before the actinium region, and the Fermi surfaces are close to the continuum. Thus the superheavy nuclei are usually not stable. The alpha-decay lifetimes in the (265)Bh decay chain are evaluated by different formulae, and compared with experimental data. The methods which give good agreement with the data are selected.

X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions

We utilize slow highly charged ions of Xeq+ and Pbq+ to irradiate GaN crystal films grown on sapphire substrate, and use X-ray photoelectron spectroscopy to analyze its surface chemical composition and chemical state of the elements. The results show that highly charged ions can etch the sample surface obviously, and the GaN sample irradiated by highly charged ions has N depletion or is Ga rich on its surface. Besides, the relative content of Ga-Ga bond increases as the dose and charge state of the incident ions increase. In addition, the binding energy of Ga 3d(5/2) electrons corresponding to Ga-Ga bond of the irradiated GaN sample is smaller compared with that of the Ga bulk material. This can be attributed to the lattice damage, which shifts the binding energy of inner orbital electrons to the lower end.