Development of germanium/silicon integration for near infrared detection

Silicon (Si) is the base material for electronic technologies and is emerging as a very attractive platform for photonic integrated circuits (PICs). PICs allow optical systems to be made more compact with higher performance than discrete optical components. Applications for PICs are in the area of fibre-optic communication, biomedical devices, photovoltaics and imaging. Germanium (Ge), due to its suitable bandgap for telecommunications and its compatibility with Si technology is preferred over III-V compounds as an integrated on-chip detector at near infrared wavelengths. There are two main approaches for Ge/Si integration: through epitaxial growth and through direct wafer bonding. The lattice mismatch of ~4.2% between Ge and Si is the main problem of the former technique which leads to a high density of dislocations while the bond strength and conductivity of the interface are the main challenges of the latter. Both result in trap states which are expected to play a critical role. Understanding the physics of the interface is a key contribution of this thesis. This thesis investigates Ge/Si diodes using these two methods. The effects of interface traps on the static and dynamic performance of Ge/Si avalanche photodetectors have been modelled for the first time. The thesis outlines the original process development and characterization of mesa diodes which were fabricated by transferring a ~700 nm thick layer of p-type Ge onto n-type Si using direct wafer bonding and layer exfoliation. The effects of low temperature annealing on the device performance and on the conductivity of the interface have been investigated. It is shown that the diode ideality factor and the series resistance of the device are reduced after annealing. The carrier transport mechanism is shown to be dominated by generation–recombination before annealing and by direct tunnelling in forward bias and band-to-band tunnelling in reverse bias after annealing. The thesis presents a novel technique to realise photodetectors where one of the substrates is thinned by chemical mechanical polishing (CMP) after bonding the Si-Ge wafers. Based on this technique, Ge/Si detectors with remarkably high responsivities, in excess of 3.5 A/W at 1.55 μm at −2 V, under surface normal illumination have been measured. By performing electrical and optical measurements at various temperatures, the carrier transport through the hetero-interface is analysed by monitoring the Ge band bending from which a detailed band structure of the Ge/Si interface is proposed for the first time. The above unity responsivity of the detectors was explained by light induced potential barrier lowering at the interface. To our knowledge this is the first report of light-gated responsivity for vertically illuminated Ge/Si photodiodes. The wafer bonding approach followed by layer exfoliation or by CMP is a low temperature wafer scale process. In principle, the technique could be extended to other materials such as Ge on GaAs, or Ge on SOI. The unique results reported here are compatible with surface normal illumination and are capable of being integrated with CMOS electronics and readout units in the form of 2D arrays of detectors. One potential future application is a low-cost Si process-compatible near infrared camera.

Effect of spatial nonlocality on the density functional band gap

We show that for a large class of exchange-correlation functionals the local exchange-correlation potential obtained within an optimized effective potential severely underestimates the band gap. On the other hand, the corresponding nonlocal potential obtained from a generalized Kohn-Sham scheme provides a much better description of the band gap, in good agreement with experiments. These results strongly indicate that a local exchange-correlation potential, however good the exchange-correlation approximation, cannot capture the delicate interplay between correlation effects and spatial localization in the KS band structure, unless the (cumbersome) contribution from the derivative discontinuity of the exchange-correlation energy functional is considered.

An analysis of the methyl rotation dynamics in the So (x' A) and T (a A) states of thioacetaldehyde from Pyrolysis jet spectra /

Jet-cooled, laser-induced phosphorescence excitation spectra (LIP) of thioacetaldehyde CH3CHS, CH3CDS, CD3CHS and CD3CDS have been observed over the region 15800 - 17300 cm"^ in a continuous pyrolysis jet. The vibronic band structure of the singlet-triplet n -* n* transition were attributed to the strong coupling of the methyl torsion and aldehydic hydrogen wagging modes . The vibronic peaks have been assigned in terms of two upper electronic state (T^) vibrations; the methyl torsion mode v^g, and the aldehydic hydrogen wagging mode v^^. The electronic origin O^a^ is unequivocally assigned as follows: CH3CHS (16294.9 cm"'' ), CH3CDS (16360.9 cm"'' ), CD3CHS (16299.7 cm"^ ), and CD3CDS (16367.2 cm"'' ). To obtain structural and dynamical information about the two electronic states, potential surfaces V(e,a) for the 6 (methyl torsion) and a (hydrogen wagging) motions were generated by ab initio quantum mechanical calculations with a 6-3 IG* basis in which the structural parameters were fully relaxed. The kinetic energy coefficients BQ(a,e) , B^(a,G) , and the cross coupling term B^(a,e) , were accurately represented as functions of the two active coordinates, a and 9. The calculations reveal that the molecule adopts an eclipsed conformation for the lower Sq electronic state (a=0°,e=0"') with a barrier height to internal rotation of 541.5 cm"^ which is to be compared to 549.8 cm"^ obtained from the microwave experiment. The conformation of the upper T^ electronic state was found to be staggered (a=24 . 68° ,e=-45. 66° ) . The saddle point in the path traced out by the aldehyde wagging motion was calculated to be 175 cm"^ above the equilibrium configuration. The corresponding maxima in the path taken by methyl torsion was found to be 322 cm'\ The small amplitude normal vibrational modes were also calculated to aid in the assignment of the spectra. Torsional-wagging energy manifolds for the two states were derived from the Hamiltonian H(a,e) which was solved variationally using an extended two dimensional Fourier expansion as a basis set. A torsionalinversion band spectrum was derived from the calculated energy levels and Franck-Condon factors, and was compared with the experimental supersonic-jet spectra. Most of the anomalies which were associated with the interpretation of the observed spectrum could be accounted for by the band profiles derived from ab initio SCF calculations. A model describing the jet spectra was derived by scaling the ab initio potential functions. The global least squares fitting generates a triplet state potential which has a minimum at (a=22.38° ,e=-41.08°) . The flatter potential in the scaled model yielded excellent agreement between the observed and calculated frequency intervals.

Spectroscopic and theoretical considerations of cyclopropenone

Please consult the paper edition of this thesis to read. It is available on the 5th Floor of the Library at Call Number: Z 9999 P65 D53 2007

Etude théorique des propriétés électroniques et optiques des super-réseaux de Si/SiO2

FRANCAIS: L'observation d'une intense luminescence dans les super-réseaux de Si/SiO2 a ouvert de nouvelles avenues en recherche théorique des matériaux à base de silicium, pour des applications éventuelles en optoélectronique. Le silicium dans sa phase cristalline possède un gap indirect, le rendant ainsi moins intéressant vis-à-vis d'autres matériaux luminescents. Concevoir des matériaux luminescents à base de silicium ouvrira donc la voie sur de multiples applications. Ce travail fait état de trois contributions au domaine. Premièrement, différents modèles de super-réseaux de Si/SiO2 ont été conçus et étudiés à l'aide de calculs ab initio afin d'en évaluer les propriétés structurales, électroniques et optiques. Les deux premiers modèles dérivés des structures cristallines du silicium et du dioxyde de silicium ont permis de démontrer l'importance du rôle de l'interface Si/SiO2 sur les propriétés optiques. De nouveaux modèles structurellement relaxés ont alors été construits afin de mieux caractériser les interfaces et ainsi mieux évaluer la portée du confinement sur les propriétés optiques. Deuxièmement, un gap direct dans les modèles structurellement relaxés a été obtenu. Le calcul de l'absorption (par l'application de la règle d'or de Fermi) a permis de confirmer que les propriétés d'absorption (et d'émission) du silicium cristallin sont améliorées lorsque celui-ci est confiné par le SiO2. Un décalage vers le bleu avec accroissement du confinement a aussi été observé. Une étude détaillée du rôle des atomes sous-oxydés aux interfaces a de plus été menée. Ces atomes ont le double effet d'accroître légèrement le gap d'énergie et d'aplanir la structure électronique près du niveau de Fermi. Troisièmement, une application directe de la théorique des transitions de Slater, une approche issue de la théorie de la fonctionnelle de la densité pour des ensembles, a été déterminée pour le silicium cristallin puis comparée aux mesures d'absorption par rayons X. Une très bonne correspondance entre cette théorie et l'expérience est observée. Ces calculs ont été appliqués aux super-réseaux afin d'estimer et caractériser leurs propriétés électroniques dans la zone de confinement, dans les bandes de conduction.

Etude ab initio du pnicture de fer supraconducteur LaOFeAs

Le présent mémoire traite de la description du LaOFeAs, le premier matériau découvert de la famille des pnictures de fer, par la théorie de la fonctionnelle de la densité (DFT). Plus particulièrement, nous allons exposer l’état actuel de la recherche concernant ce matériau avant d’introduire rapidement la DFT. Ensuite, nous allons regarder comment se comparent les paramètres structuraux que nous allons calculer sous différentes phases par rapport aux résultats expérimentaux et avec les autres calculs DFT dans la littérature. Nous allons aussi étudier en détails la structure électronique du matériau sous ses différentes phases magnétiques et structurales. Nous emploierons donc les outils normalement utilisés pour mieux comprendre la structure électronique : structures de bandes, densités d’états, surfaces de Fermi, nesting au niveau de Fermi. Nous tirerons profit de la théorie des groupes afin de trouver les modes phononiques permis par la symétrie de notre cristal. De plus, nous étudierons le couplage électrons-phonons pour quelques modes. Enfin, nous regarderons l’effet de différentes fonctionnelles sur nos résultats pour voir à quel point ceux-ci sont sensibles à ce choix. Ainsi, nous utiliserons la LDA et la PBE, mais aussi la LDA+U et la PBE+U.

Calculs ab initio de structures électroniques et de leur dépendance en température avec la méthode GW

Cette thèse porte sur le calcul de structures électroniques dans les solides. À l'aide de la théorie de la fonctionnelle de densité, puis de la théorie des perturbations à N-corps, on cherche à calculer la structure de bandes des matériaux de façon aussi précise et efficace que possible. Dans un premier temps, les développements théoriques ayant mené à la théorie de la fonctionnelle de densité (DFT), puis aux équations de Hedin sont présentés. On montre que l'approximation GW constitue une méthode pratique pour calculer la self-énergie, dont les résultats améliorent l'accord de la structure de bandes avec l'expérience par rapport aux calculs DFT. On analyse ensuite la performance des calculs GW dans différents oxydes transparents, soit le ZnO, le SnO2 et le SiO2. Une attention particulière est portée aux modèles de pôle de plasmon, qui permettent d'accélérer grandement les calculs GW en modélisant la matrice diélectrique inverse. Parmi les différents modèles de pôle de plasmon existants, celui de Godby et Needs s'avère être celui qui reproduit le plus fidèlement le calcul complet de la matrice diélectrique inverse dans les matériaux étudiés. La seconde partie de la thèse se concentre sur l'interaction entre les vibrations des atomes du réseau cristallin et les états électroniques. Il est d'abord montré comment le couplage électron-phonon affecte la structure de bandes à température finie et à température nulle, ce qu'on nomme la renormalisation du point zéro (ZPR). On applique ensuite la méthode GW au calcul du couplage électron-phonon dans le diamant. Le ZPR s'avère être fortement amplifié par rapport aux calculs DFT lorsque les corrections GW sont appliquées, améliorant l'accord avec les observations expérimentales.

Acid-Base. Surface Electron Donatin6 &.Catai.Ytlc Properties Of Some Binary Mixed Oxides Containing Rare Earth Elements

Catalysis research underpins the science of modern chemical processing and fuel technologies. Catalysis is commercially one of the most important technologies in national economies. Solid state heterogeneous catalyst materials such as metal oxides and metal particles on ceramic oxide substrates are most common. They are typically used with commodity gases and liquid reactants. Selective oxidation catalysts of hydrocarbon feedstocks is the dominant process of converting them to key industrial chemicals, polymers and energy sources.[1] In the absence of a unique successfiil theory of heterogeneous catalysis, attempts are being made to correlate catalytic activity with some specific properties of the solid surface. Such correlations help to narrow down the search for a good catalyst for a given reaction. The heterogeneous catalytic performance of material depends on many factors such as [2] Crystal and surface structure of the catalyst. Thermodynamic stability of the catalyst and the reactant. Acid- base properties of the solid surface. Surface defect properties of the catalyst.Electronic and semiconducting properties and the band structure. Co-existence of dilferent types of ions or structures. Adsorption sites and adsorbed species such as oxygen.Preparation method of catalyst , surface area and nature of heat treatment. Molecular structure of the reactants. Many systematic investigations have been performed to correlate catalytic performances with the above mentioned properties. Many of these investigations remain isolated and further research is needed to bridge the gap in the present knowledge of the field.

Band gap control via tuning of inversion degree in CdIn2S4 spinel

Based on theoretical arguments we propose a possible route for controlling the band-gap in the promising photovoltaic material CdIn2S4. Our ab initio calculations show that the experimental degree of inversion in this spinel (fraction of tetrahedral sites occupied by In) corresponds approximately to the equilibrium value given by the minimum of the theoretical inversion free energy at a typical synthesis temperature. Modification of this temperature, or of the cooling rate after synthesis, is then expected to change the inversion degree, which in turn sensitively tunes the electronic band-gap of the solid, as shown here by Heyd-Scuseria-Ernzerhof screened hybrid functional calculations.

Tight-binding model for carbon nanotubes from ab initio calculations

Here we present a parametrized tight-binding (TB) model to calculate the band structure of single-wall carbon nanotubes (SWNTs). On the basis of ab initio calculations we fit the band structure of nanotubes of different radii with results obtained with an orthogonal TB model to third neighbors, which includes the effects of orbital hybridization by means of a reduced set of parameters. The functional form for the dependence of these parameters on the radius of the tubes can be used to interpolate appropriate TB parameters for different SWNTs and to study the effects of curvature on their electronic properties. Additionally, we have shown that the model gives an appropriate description of the optical spectra of SWNTs, which can be useful for a proper assignation of SWNTs` specific chirality from optical absorption experiments.

Joint Experimental and Theoretical Analysis of Order Disorder Effects in Cubic BaZrO(3) Assembled Nanoparticles under Decaoctahedral Shape

Periodic first-principles calculations based on density functional theory at the B3LYP level has been carried out to investigate the photoluminescence (PL) emission of BaZrO(3) assembled nanoparticles at room temperature. The defect created in the nanocrystals and their resultant electronic features lead to a diversification of electronic recombination within the BaZrO(3) band gap. Its optical phenomena are discussed in the light of photoluminescence emission at the green-yellow region around 570 nm. The theoretical model for displaced atoms and/or angular changes leads to the breaking of the local symmetry, which is based on the refined structure provided by Rietveld methodology. For each situation a band structure, charge mapping, and density of states were built and analyzed. X-ray diffraction (XRD) patterns, UV-vis measurements, and field emission scanning electron microscopy (FE-SEM) images are essential for a full evaluation of the crystal structure and morphology.

Axial ligand influence on geometries, charge distributions and electronic structures of iron tetraazamacrocycle [Fe((II))TIM(X)(Y)](2+) complexes assessed by Density Functional Theory

We employed the Density Functional Theory along with small basis sets, B3LYP/LANL2DZ, for the study of FeTIM complexes with different pairs of axial ligands (CO, H(2)O, NH(3), imidazole and CH(3)CN). These calculations did not result in relevant changes of molecular quantities as bond lengths, vibrational frequencies and electronic populations supporting any significant back-donation to the carbonyl or acetonitrile axial ligands. Moreover, a back-donation mechanism to the macrocycle cannot be used to explain the observed changes in molecular properties along these complexes with CO or CH(3)CN. This work also indicates that complexes with CO show smaller binding energies and are less stable than complexes with CH(3)CN. Further, the electronic band with the largest intensity in the visible region (or close to this region) is associated to the transition from an occupied 3d orbital on iron to an empty pi* orbital located at the macrocycle. The energy of this Metal-to-Ligand Charge Transfer (MLCT) transition shows a linear relation to the total charge of the macrocycle in these complexes as given by Mulliken or Natural Population Analysis (NPA) formalisms. Finally, the macrocycle total charge seems to be influenced by the field induced by the axial ligands. (C) 2011 Elsevier Ltd. All rights reserved.

Cálculos AB initio de propriedades estruturais, eletrônicas e ópticas de colmpostos CaXo3 (X=Si, Ge, Sn)

In this work we present a study of structural, electronic and optical properties, at ambient conditions, of CaSiO3, CaGeO3 and CaSnO3 crystals, all of them a member of Ca-perovskite class. To each one, we have performed density functional theory ab initio calculations within LDA and GGA approximations of the structural parameters, geometry optimization, unit cell volume, density, angles and interatomic length, band structure, carriers effective masses, total and partial density of states, dielectric function, refractive index, optical absorption, reflectivity, optical conductivity and loss function. A result comparative procedure was done between LDA and GGA calculations, a exception to CaSiO3 where only LDA calculation was performed, due high computational cost that its low symmetry crystalline structure imposed. The Ca-perovskite bibliography have shown the absence of electronic structure calculations about this materials, justifying the present work

Espectros fractais em sistemas nanoestruturados e cristais fotônicos

The study of the elementary excitations such as photons, phonons, plasmons, polaritons, polarons, excitons and magnons, in crystalline solids and nanostructures systems are nowdays important active field for research works in solid state physics as well as in statistical physics. With this aim in mind, this work has two distinct parts. In the first one, we investigate the propagation of excitons polaritons in nanostructured periodic and quasiperiodic multilayers, from the description of the behavior for bulk and surface modes in their individual constituents. Through analytical, as well as computational numerical calculation, we obtain the spectra for both surface and bulk exciton-polaritons modes in the superstructures. Besides, we investigate also how the quasiperiodicity modifies the band structure related to the periodic case, stressing their amazing self-similar behavior leaving to their fractal/multifractal aspects. Afterwards, we present our results related to the so-called photonic crystals, the eletromagnetic analogue of the electronic crystalline structure. We consider periodic and quasiperiodic structures, in which one of their component presents a negative refractive index. This unusual optic characteristic is obtained when the electric permissivity and the magnetic permeability µ are both negatives for the same range of angular frequency ω of the incident wave. The given curves show how the transmission of the photon waves is modified, with a striking self-similar profile. Moreover, we analyze the modification of the usual Planck´s thermal spectrum when we use a quasiperiodic fotonic superlattice as a filter.

Quantum Mechanics Insight into the Microwave Nucleation of SrTiO3 Nanospheres

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