Degradação fotocatalítica de efluente simulado de refinaria de petróleo e monitoramento de sua toxicidade com microrganismos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Otimização das propriedades fotoluminescentes de nanoestruturas preparadas via síntese hidrotérmica assistida por micro-ondas

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Síntese, caracterização estrutural, espectroscópica e análise do potencial fotocatalítico do aluminato de cobalto e potencial catalítico na preparação do biodiesel

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Experimental and Theoretical Investigations of Electronic Structure and Photoluminescence Properties of beta-Ag2MoO4 Microcrystals

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Decoration of Ti/TiO2 Nanotubes with Pt Nanoparticles for Enhanced UV-Vis Light Absorption in Photoelectrocatalytic Process

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Propriedades estruturais e eletrônicas de nanofilmes de TiO2 anatase: cálculos B3LYP-D* em sistemas periódicos bidimensionais

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Phenomenological model for the interpretation of impedance/admittance spectroscopy results in polymer light-emitting electrochemical cells

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structural and optical properties of Cu2O crystalline electrodeposited films

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

TiO2/CuO films obtained by citrate precursor method for photocatalytic application

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A joint experimental and theoretical study on the electronic structure and photoluminescence properties of Al-2(WO4)(3) powders

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Novos materiais multifuncionais para aplicação em fotocatálise

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Persistent luminescence behavior of materials doped with Eu2+ and Tb3+

In this work, the persistent luminescence mechanisms of Tb3+ (in CdSiO3) and Eu2+ (in BaAl2O4) based on solid experimental data are compared. The photoluminescence spectroscopy shows the different nature of the inter- and intraconfigurational transitions for Eu2+ and Tb3+, respectively. The electron is the charge carrier in both mechanisms, implying the presence of electron acceptor defects. The preliminary structural analysis shows a free space in CdSiO3 able to accommodate interstitial oxide ions needed by charge compensation during the initial preparation. The subsequent annealing removes this oxide leaving behind an electron trap. Despite the low band gap energy for CdSiO3, determined with synchrotron radiation UV-VUV excitation spectroscopy of Tb3+, the persistent luminescence from Tb3+ is observed only with UV irradiation. The need of high excitation energy is due to the position of F-7(6) level deep below the bottom of the conduction band, as determined with the 4f(8)-> 4f(7)5d(1) and the ligand-to-metal charge-transfer transitions. Finally, the persistent luminescence mechanisms are constructed and, despite the differences, the mechanisms for Tb3+ and Eu2+ proved to be rather similar. This similarity confirms the solidity of the interpretation of experimental data for the Eu2+ doped persistent luminescence materials and encourages the use of similar models for other persistent luminescence materials. (C) 2012 Optical Society of America

Discovery of the Persistent Luminescence Mechanism of CdSiO3:Tb3+

The persistent luminescence of CdSiO3:Tb3+ was investigated with photoluminescence, thermoluminescence (TL), synchrotron radiation X-ray absorption (XANES and EXAFS) and UV-VUV spectroscopies. Only the typical intraconfigurational 4f(8)-4f(8) transitions of the Tb3+ ion were observed with no traces of band emission in either the conventional UV excited or persistent luminescence spectra. The trap structure from TL with three traps from 0.65 to 0.85 eV is ideal for room-temperature persistent luminescence similar to, e.g., Sr2MgSi2O7:Eu2+,R3+. Despite the rather low band gap energy, 5.28 eV, the persistent luminescence from Tb3+ is produced only under UV irradiation due to the inauspicious position of the F-7(6) ground level deep in the band gap of CdSiO3. This confirms the role of electrons as the charge carriers in the mechanism of Tb3+ persistent luminescence. The XANES spectra indicated the presence of only the trivalent Tb3+ species, thus excluding the direct Tb3+ -> Tb-IV oxidation during the charging process of persistent luminescence. Eventually, a unique persistent luminescence mechanism for Tb3+ in CdSiO3 was constructed based on the comprehensive experimental data.

Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence

High-resolution monochromated electron energy loss spectroscopy (EELS) at subnanometric spatial resolution and <200 meV energy resolution has been used to assess the valence band properties of a distributed Bragg reflector multilayer heterostructure composed of InAlN lattice matched to GaN. This work thoroughly presents the collection of methods and computational tools put together for this task. Among these are zero-loss-peak subtraction and nonlinear fitting tools, and theoretical modeling of the electron scattering distribution. EELS analysis allows retrieval of a great amount of information: indium concentration in the InAlN layers is monitored through the local plasmon energy position and calculated using a bowing parameter version of Vegard Law. Also a dielectric characterization of the InAlN and GaN layers has been performed through Kramers-Kronig analysis of the Valence-EELS data, allowing band gap energy to be measured and an insight on the polytypism of the GaN layers.

Global optimization of solar thermophotovoltaic systems

n this paper, we present a theoretical model based on the detailed balance theory of solar thermophotovoltaic systems comprising multijunction photovoltaic cells, a sunlight concentrator and spectrally selective surfaces. The full system has been defined by means of 2n + 8 variables (being n the number of sub-cells of the multijunction cell). These variables are as follows: the sunlight concentration factor, the absorber cut-off energy, the emitter-to-absorber area ratio, the emitter cut-off energy, the band-gap energy(ies) and voltage(s) of the sub-cells, the reflectivity of the cells' back-side reflector, the emitter-to-cell and cell-to-cell view factors and the emitter-to-cell area ratio. We have used this model for carrying out a multi-variable system optimization by means of a multidimensional direct-search algorithm. This analysis allows to find the set of system variables whose combined effects results in the maximum overall system efficiency. From this analysis, we have seen that multijunction cells are excellent candidates to enhance the system efficiency and the electrical power density. Particularly, multijunction cells report great benefits for systems with a notable presence of optical losses, which are unavoidable in practical systems. Also, we have seen that the use of spectrally selective absorbers, rather than black-body absorbers, allows to achieve higher system efficiencies for both lower concentration and lower emitter-to-absorber area ratio. Finally, we have seen that sun-to-electricity conversion efficiencies above 30% and electrical power densities above 50 W/cm2 are achievable for this kind of systems.