997 resultados para American Physical Society (APS)


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Mode of access: Internet.

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"The manuscript of this work is in the library of the American philosophical society. It is a copy made by Mr. Duponceau, and forms no. xxvii of a collection made by him and recorded in a folio account book, of which it occupies pp. 114-119."--Pilling, Bibl. of the Algonquin languages, p. 227.

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"The Dred Scott decision: speech, delivered, in part, at the anniversary of the American Abolition Society, held in New York, May 14th, 1857" on pages [25]-46, with half title page.

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How useful is a quantum dynamical operation for quantum information processing? Motivated by this question, we investigate several strength measures quantifying the resources intrinsic to a quantum operation. We develop a general theory of such strength measures, based on axiomatic considerations independent of state-based resources. The power of this theory is demonstrated with applications to quantum communication complexity, quantum computational complexity, and entanglement generation by unitary operations.

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Classification is the most basic method for organizing resources in the physical space, cyber space, socio space and mental space. To create a unified model that can effectively manage resources in different spaces is a challenge. The Resource Space Model RSM is to manage versatile resources with a multi-dimensional classification space. It supports generalization and specialization on multi-dimensional classifications. This paper introduces the basic concepts of RSM, and proposes the Probabilistic Resource Space Model, P-RSM, to deal with uncertainty in managing various resources in different spaces of the cyber-physical society. P-RSM’s normal forms, operations and integrity constraints are developed to support effective management of the resource space. Characteristics of the P-RSM are analyzed through experiments. This model also enables various services to be described, discovered and composed from multiple dimensions and abstraction levels with normal form and integrity guarantees. Some extensions and applications of the P-RSM are introduced.

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16 pages, 22 figures

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We perform computer simulations of the quasi-liquid layer of ice formed at the ice/vapor interface close to the ice Ih/liquid/vapor triple point of water. Our study shows that the two distinct surfaces bounding the film behave at small wave-lengths as atomically rough and independent ice/water and water/vapor interfaces. For long wave-lengths, however, the two surfaces couple, large scale parallel fluctuations are inhibited and the ice/vapor interface becomes smooth. Our results could help explaining the complex morphology of ice crystallites.

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Text summarization has been studied for over a half century, but traditional methods process texts empirically and neglect the fundamental characteristics and principles of language use and understanding. Automatic summarization is a desirable technique for processing big data. This reference summarizes previous text summarization approaches in a multi-dimensional category space, introduces a multi-dimensional methodology for research and development, unveils the basic characteristics and principles of language use and understanding, investigates some fundamental mechanisms of summarization, studies dimensions on representations, and proposes a multi-dimensional evaluation mechanism. Investigation extends to incorporating pictures into summary and to the summarization of videos, graphs and pictures, and converges to a general summarization method. Further, some basic behaviors of summarization are studied in the complex cyber-physical-social space. Finally, a creative summarization mechanism is proposed as an effort toward the creative summarization of things, which is an open process of interactions among physical objects, data, people, and systems in cyber-physical-social space through a multi-dimensional lens of semantic computing. The insights can inspire research and development of many computing areas.

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We analyze the physical-chemical surface properties of single-slit, single-groove subwavelength-structured silver films with high-resolution transmission electron microscopy and calculate exact solutions to Maxwell’s equations corresponding to recent far-field interferometry experiments using these structures. Contrary to a recent suggestion the surface analysis shows that the silver films are free of detectable contaminants. The finite-difference time-domain calculations, in excellent agreement with experiment, show a rapid fringe amplitude decrease in the near zone (slit-groove distance out to 3–4 wavelengths). Extrapolation to slit-groove distances beyond the near zone shows that the surface wave evolves to the expected bound surface plasmon polariton (SPP). Fourier analysis of these results indicates the presence of a distribution of transient, evanescent modes around the SPP that dephase and dissipate as the surface wave evolves from the near to the far zone.

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We use first-principles electronic structure methods to show that the piezoresistive strain gauge factor of single-crystalline bulk n-type silicon-germanium alloys at carefully controlled composition can reach values of G = 500, three times larger than that of silicon, the most sensitive such material used in industry today. At cryogenic temperatures of 4 K we find gauge factors of G = 135 000, 13 times larger than that observed in Si whiskers. The improved piezoresistance is achieved by tuning the scattering of carriers between different (Delta and L) conduction band valleys by controlling the alloy composition and strain configuration.

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A first-principles method is applied to find the intra and intervalley n-type carrier scattering rates for substitutional carbon in silicon. The method builds on a previously developed first-principles approach with the introduction of an interpolation technique to determine the intravalley scattering rates. Intravalley scattering is found to be the dominant alloy scattering process in Si1-xCx, followed by g-type intervalley scattering. Mobility calculations show that alloy scattering due to substitutional C alone cannot account for the experimentally observed degradation of the mobility. We show that the incorporation of additional charged impurity scattering due to electrically active interstitial C complexes models this residual resistivity well.

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First-principles electronic structure methods are used to find the rates of inelastic intravalley and intervalley n-type carrier scattering in Si1-xGex alloys. Scattering parameters for all relevant Delta and L intra- and intervalley scattering are calculated. The short-wavelength acoustic and the optical phonon modes in the alloy are computed using the random mass approximation, with interatomic forces calculated in the virtual crystal approximation using density functional perturbation theory. Optical phonon and intervalley scattering matrix elements are calculated from these modes of the disordered alloy. It is found that alloy disorder has only a small effect on the overall inelastic intervalley scattering rate at room temperature. Intravalley acoustic scattering rates are calculated within the deformation potential approximation. The acoustic deformation potentials are found directly and the range of validity of the deformation potential approximation verified in long-wavelength frozen phonon calculations. Details of the calculation of elastic alloy scattering rates presented in an earlier paper are also given. Elastic alloy disorder scattering is found to dominate over inelastic scattering, except for almost pure silicon (x approximate to 0) or almost pure germanium (x approximate to 1), where acoustic phonon scattering is predominant. The n-type carrier mobility, calculated from the total (elastic plus inelastic) scattering rate, using the Boltzmann transport equation in the relaxation time approximation, is in excellent agreement with experiments on bulk, unstrained alloys..

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The p-type carrier scattering rate due to alloy disorder in Si1-xGex alloys is obtained from first principles. The required alloy scattering matrix elements are calculated from the energy splitting of the valence bands, which arise when one average host atom is replaced by a Ge or Si atom in supercells containing up to 128 atoms. Alloy scattering within the valence bands is found to be characterized by a single scattering parameter. The hole mobility is calculated from the scattering rate using the Boltzmann transport equation in the relaxation time approximation. The results are in good agreement with experiments on bulk, unstrained alloys..

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First-principles electronic structure methods are used to find the rates of intravalley and intervalley n-type carrier scattering due to alloy disorder in Si1-xGex alloys. The required alloy scattering matrix elements are calculated from the energy splitting of nearly degenerate Bloch states which arises when one average host atom is replaced by a Ge or Si atom in supercells containing up to 128 atoms. Scattering parameters for all relevant Delta and L intravalley and intervalley alloy scattering are calculated. Atomic relaxation is found to have a substantial effect on the scattering parameters. f-type intervalley scattering between Delta valleys is found to be comparable to other scattering channels. The n-type carrier mobility, calculated from the scattering rate using the Boltzmann transport equation in the relaxation time approximation, is in excellent agreement with experiments on bulk, unstrained alloys.

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We report the results of direct measurement of remanent hysteresis loops on nanochains of BiFeO3 at room temperature under zero and ∼20 kOe magnetic field. We noticed a suppression of remanent polarization by nearly ∼40% under the magnetic field. The powder neutron diffraction data reveal significant ion displacements under a magnetic field which seems to be the origin of the suppression of polarization. The isolated nanoparticles, comprising the chains, exhibit evolution of ferroelectric domains under dc electric field and complete 180 switching in switching-spectroscopy piezoresponse force microscopy. They also exhibit stronger ferromagnetism with nearly an order of magnitude higher saturation magnetization than that of the bulk sample. These results show that the nanoscale BiFeO3 exhibits coexistence of ferroelectric and ferromagnetic order and a strong magnetoelectric multiferroic coupling at room temperature comparable to what some of the type-II multiferroics show at a very low temperature.