Characterization of hot deformation behavior of Zr-1Nb-1Sn alloy

The hot deformation behavior of beta-quenched Zr-1 Nb-1Sn was studied in the temperature range 650-1050 degrees C and strain rate range 0.001-100 s(-1) using processing maps. These maps revealed three different domains: a domain of dynamic recovery at temperatures <700 degrees C and at strain rates <3 x 10(-3) s(-1), a domain of dynamic recrystallization in the temperature range 750-950 C-degrees and at strain rates <10(-2) S-1 with a peak at 910 degrees C and 10(-3) S-1 (in alpha + beta phase field), and a domain of large-grain superplasticity in the beta phase field at strain rates <10(-2) s(-1). In order to identify the rate controlling mechanisms involved in these domains, kinetic analysis was carried out to determine the various activation parameters. In addition, the processing maps showed a regime of flow instability spanning both alpha + beta and beta phase fields. The hot deformation behavior of Zr 1Nb-1Sn was compared with that of Zr, Zr-2.5Nb and Zircaloy-2 to bring out the effects of alloy additions. (C) 2006 Elsevier BN. All rights reserved.

Effect of Al substitution on the magnetic properties of amorphous Fe73.5Cu1Mo3Si13.5-xAlxB9 alloy

We have synthesized FINEMET type amorphous Fe73.5Cu1Mo3Si13.5-xAlxB9 alloy by the single wheel melt spinning technique. The effect of Al substitution on the magnetic properties has been studied using a vibrating sample magnetometer, SQUID and Mossbauer spectroscopy. Magnetization and Curie temperature of the amorphous phase of the alloys were found to decrease with A] concentration. The results are attributed to the dilution effect of At on the magnetic moment of Fe and to the increase in Fe-Fe interaction distance resulting in the weakening of exchange interaction. (C) 2007 Elsevier B.V. All rights reserved.

Processing Response of Boron Modified Ti-6Al-4V Alloy In (alpha plus beta) Working Regime

Titanium alloys like Ti-6A-4V are the backbone materials for aerospace, energy and chemical industries. Hypoeutectic boron addition to Ti-6Al-4V alloy produces a reduction in as-cast grain size by roughly an order of magnitude resulting in the possibility of avoiding ingot breakdown step and thereby reducing the processing cost. In the present study, ISM processed as-cast boron added Ti-6Al-4V alloy is deformed in (alpha+beta)-phase field, where alpha-lath bending seemed to be the dominating deformation mechanism.

Development of novel grain morphology during hot extrusion of magnesium AZ21 alloy

Microstructure and microtexture evolution during static annealing of a hot-extruded AZ21 magnesium alloy was studied. Apart from fine recrystallized equiaxed grains and large elongated deformed grains, a new third kind of abnormal grains that are stacked one after the other in a row parallel to the extrusion direction were observed. The crystallographic misorientation inside these grains was similar to that of the fine recrystallized grains. The large elongated grains exhibited significant in-grain misorientation. A self-consistent mechanistic model was developed to describe the formation of these grain morphologies during dynamic recrystallization (DRX). The texture of pre-extruded material, although lost in DRX, leaves a unique signature which manifests itself in the form of these grain morphologies. The origin of abnormal stacked grains was associated with slow nucleation in pre-extruded grains of a certain orientation. Further annealing resulted in large secondary recrystallized grains with occasional extension twins. (c) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Grain boundary sliding during diffusion and dislocation creep in a Mg-0.7 pct Al alloy

Early studies on grain boundary sliding (GBS) in Mg alloys have suggested frequently that the contribution of GBS to creep is high even under conditions corresponding to dislocation creep. The role of creep strain and grain size in influencing the experimental measurements has not been clearly identified. Grain boundary sliding measurements were conducted in detail over experimental conditions corresponding to diffusion creep as well as dislocation creep in a single-phase Mg-0.7 wt pet Al alloy. The results indicated clearly that the GBS contribution to creep was Very high during,, diffusion creep at low stresses (similar to 75 pct) and substantially reduced during dislocation creep at high stresses (similar to 15 pct). These measurements were consistent with the observation of significant intragranular slip band activity observed in most grains at high stresses and very little slip band activity at low stresses. The experimental measurements and analysis indicated also that the GBS contribution to creep was high during the initial stages of creep and decreased to a steady-state value at large strains.

Effect of laser surface treatment on microstructure and properties of MRI 230D Mg alloy

A creep resistant Mg alloy MRI 230D was subjected to laser surface treatment using Nd:YAG laser equipped with a fiber optics beam delivery system in argon atmosphere. The laser surface treatment produced a fine dendritic microstructure and this treatment was beneficial for the corrosion and wear resistance of the alloy. Long-term linear polarisation resistance and Electrochemical Impedance Spectroscopy measurements confirmed that the polarisation resistance values of laser treated material were twice as high as that for the untreated material. This improved behaviour was due to the finer and more homogenous microstructure of the laser treated surface. The laser treatment also increased surface hardness two times and reduced the wear rate by 25% due to grain refinement and solid solution strengthening.

Formation of ω-Al7Cu2Fe phase during laser processing of quasicrystal-forming Al-Cu-Fe alloy

The formation of an ω-Al7Cu2Fe phase during laser cladding of quasicrystal-forming Al65Cu23.3Fe11.7 alloy on a pure aluminium substrate is reported. This phase is found to nucleate at the periphery of primary icosahedral-phase particles. A large number of ω-phase particles form an envelope around the icosahedral phase. On the outer side, they form an interface with an agr-Al solid solution. Detailed transmission electron microscopic observations show that the ω phase exhibits an orientation relationship with the icosahedral phase. Analysis of experimental results suggests that the ω phase forms by precipitation on an icosahedral phase by heterogeneous nucleation and grows into the aluminium-rich melt until supersaturation is exhausted. The microstructural observations are explained in terms of available models of phase transformations.

Structural, ferroelectric and optical properties of Bi2VO5.5 thin films deposited on platinized silicon {(100) Pt/TiO2/SiO2/Si} substrates

Bismuth vanadate (Bi2VO5.5, BVO) thin films have been deposited by a pulsed laser ablation technique on platinized silicon substrates. The surface morphology of the BVO thin films has been studied by atomic force microscopy (AFM). The optical properties of the BVO thin films were investigated using spectroscopic ellipsometric measurements in the 300–820 nm wavelength range. The refractive index (n), extinction coefficient (k) and thickness of the BVO thin films have been obtained by fitting the ellipsometric experimental data in a four-phase model (air/BVOrough/BVO/Pt). The values of the optical constants n and k that were determined through multilayer analysis at 600 nm were 2.31 and 0.056, respectively. For fitting the ellipsometric data and to interpret the optical constants, the unknown dielectric function of the BVO films was constructed using a Lorentz model. The roughness of the films was modeled in the Brugmann effective medium approximation and the results were compared with the AFM observations.

Phase transformations in the rapidly solidified Ti40Zr20Hf20Pd20 alloy

We report that an approximant phase was initially obtained in amorphous Ti40Zr20Hf20Pd20 alloy. In the initial stage of the devitrification process, the approximant phase transforms into an icosahedral (1) phase with a high thermal stability while the cF96 Zr2Ni-type (space group Fd (3) over barm with a = 1.25 nm and 96 atoms cell(-1)) particles precipitate from the amorphous matrix. Eventually the I phase grows to several hundred nanometers when annealed at about 1000 K and then transforms into the Zr2Ni-type phase with an endothermic reaction. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Irradiation of silicon particle detectors with MeV-protons

Silicon particle detectors are used in several applications and will clearly require better hardness against particle radiation in the future large scale experiments than can be provided today. To achieve this goal, more irradiation studies with defect generating bombarding particles are needed. Protons can be considered as important bombarding species, although neutrons and electrons are perhaps the most widely used particles in such irradiation studies. Protons provide unique possibilities, as their defect production rates are clearly higher than those of neutrons and electrons, and, their damage creation in silicon is most similar to the that of pions. This thesis explores the development and testing of an irradiation facility that provides the cooling of the detector and on-line electrical characterisation, such as current-voltage (IV) and capacitance-voltage (CV) measurements. This irradiation facility, which employs a 5-MV tandem accelerator, appears to function well, but some disadvantageous limitations are related to MeV-proton irradiation of silicon particle detectors. Typically, detectors are in non-operational mode during irradiation (i.e., without the applied bias voltage). However, in real experiments the detectors are biased; the ionising proton generates electron-hole pairs, and a rise in rate of proton flux may cause the detector to breakdown. This limits the proton flux for the irradiation of biased detectors. In this work, it is shown that, if detectors are irradiated and kept operational, the electric field decreases the introduction rate of negative space-charges and current-related damage. The effects of various particles with different energies are scaled to each others by the non-ionising energy loss (NIEL) hypothesis. The type of defects induced by irradiation depends on the energy used, and this thesis also discusses the minimum proton energy required at which the NIEL-scaling is valid.

Microstructural evolution during laser resolidification of Fe-25 atom percent Ge alloy

The microstructural evolution of concentrated alloys is relatively less understood both in terms of experiments as well as theory. Laser resolidification represents a powerful technique to study the solidification behavior under controlled growth conditions. This technique has been utilized in the current study to probe experimentally microstructural selection during rapid solidification of concentrated Fe-25 atom pct Ge alloy. Under the equilibrium solidification condition, the alloy undergoes a peritectic reaction between ordered alpha(2) (B2) and its liquid, leading to the formation of ordered hexagonal intermetallic phase epsilon (DO19). In general, the as-cast microstructure consists of epsilon phase and e-p eutectic and alpha(2) that forms as a result of an incomplete peritectic reaction. With increasing laser scanning velocity, the solidification front undergoes a number of morphological transitions leading to the selection of the microstructure corresponding to metastable alpha(2)/beta eutectic to alpha(2) dendrite + alpha(2)/beta eutectic to alpha(2) dendrite. The transition velocities as obtained from the experiments are well characterized. The microstructural selection is discussed using competitive growth kinetics.

A silicon micromachined photonic band gap cell, characteristics and an application

A novel PBG cell based on micromachining of Silicon using wet anisotropic etching has been considered. Since this is based on etching of the Silicon substrate, it is amenable to fabrication with standard Silicon processes and integration with millimeter wave circuits. We characterize this kind of PBG cell by full wave simulations using a time domain code. For the purpose of characterization, the scenario of a 50 ohm microstrip line placed on a Silicon substrate which is anisotropically etched to create patterns with sloping walls is considered. This is shown to produce the well known PBG response of stop bands in certain frequency bands. We look at the variation in the transmission coefficient (S-21) response as the number of periods, length based average fill factor and depth of micromachining are varied. One application of a low pass filter has been proposed and simulated results are given.