Lifshitz transition and modulation of electronic and transport properties of bilayer graphene by sliding and applied normal compressive strain

Using density functional theory (DFT) we investigate the changes in electronic and transport properties of graphene bilayer caused by sliding one of the layers. Change in stacking pattern breaks the lattice symmetry, which results in Lifshitz transition together with the modulation of the electronic structure. Going from AA to AB stacking by sliding along armchair direction leads to a drastic transition in electronic structure from linear to parabolic dispersion. Our transport calculations show a significant change in the overall transmission value for large sliding distances along zigzag direction. The increase in interlayer coupling with normal compressive strain increases the overlapping of conduction and valence band, which leads to further shift in the Dirac points and an enhancement in the Lifshitz transition. The ability to tune the topology of band structure by sliding and/or applying normal compressive strain will open doors for controlled tuning of many physical phenomenon such as Landau levels and quantum Hall effect in graphene. (C) 2015 Elsevier Ltd. All rights reserved.

Simultaneous tunability of the electronic and phononic gaps in SnS2 under normal compressive strain

Controlled variation of the electronic properties of. two-dimensional (2D) materials by applying strain has emerged as a promising way to design materials for customized applications. Using density functional theory (DFT) calculations, we show that while the electronic structure and indirect band gap of SnS2 do not change significantly with the number of layers, they can be reversibly tuned by applying biaxial tensile (BT), biaxial compressive (BC), and normal compressive (NC) strains. Mono to multilayered SnS2 exhibit a reversible semiconductor to metal (S-M) transition with applied strain. For bilayer (2L) SnS2, the S-Mtransition occurs at the strain values of 17%,-26%, and -24% under BT, BC, and NC strains, respectively. Due to weaker interlayer coupling, the critical strain value required to achieve the S-Mtransition in SnS2 under NC strain is much higher than for MoS2. From a stability viewpoint, SnS2 becomes unstable at very low strain values on applying BC (-6.5%) and BT strains (4.9%), while it is stable even up to the transition point (-24%) in the case of NC strain. In addition to the reversible tuning of the electronic properties of SnS2, we also show tunability in the phononic band gap of SnS2, which increases with applied NC strain. This gap increases three times faster than for MoS2. This simultaneous tunability of SnS2 at the electronic and phononic levels with strain, makes it a potential candidate in field effect transistors (FETs) and sensors as well as frequency filter applications.

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an A1N nucleation layer in conjunction with an AlGaN buffer layer for stress management, and together with the interactive use of real time in-situ optical monitoring it was possible to realise flat, crack-free and uniform GaN and LED structures on 6-inch Si (111) substrates. The EL performance of processed LED devices was also studied on-wafer, giving good EL characteristics including a forward bias voltage of ∼3.5 V at 20 mA from a 500 μm × 500 μm device. © 2009 SPIE.

Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy

The structure and chemistry of the interface between a Si(111) substrate and an AlN(0001) thin film grown by metalorganic vapor phase epitaxy have been investigated at a subnanometer scale using high-angle annular dark field imaging and electron energy-loss spectroscopy. 〈1120̄〉AlN ∥ 〈110〉Si and 〈0001〉AlN ∥ 〈111〉 Si epitaxial relations were observed and an Al-face polarity of the AlN thin film was determined. Despite the use of Al deposition on the Si surface prior to the growth, an amorphous interlayer of composition SiNx was identified at the interface. Mechanisms leading to its formation are discussed. © 2010 American Institute of Physics.

Application of Three-Dimensional Discrete Element Face-to-Face Contact Model with Fissure Water Pressure to Stability Analysis of Landslide in Panluo Iron Mine

Three-dimensional discrete element face-to-face contact model with fissure water pressure is established in this paper and the model is used to simulate three-stage process of landslide under fissure water pressure in the opencast mine, according to the actual state of landslide in Panluo iron mine where landslide happened in 1990 and was fathered in 1999. The calculation results show that fissure water pressure on the sliding surface is the main reason causing landslide and the local soft interlayer weakens the stability of slope. If the discrete element method adopts the same assumption as the limit equilibrium method, the results of two methods are in good agreement; while if the assumption is not adopted in the discrete element method, the critical phi numerically calculated is less than the one calculated by use of the limit equilibrium method for the same C. Thus, from an engineering point of view, the result from the discrete element model simulation is safer and has more widely application since the discrete element model takes into account the effect of rock mass structures.

Fractal Pattern Formation In Anodic Bonding Of Pyrex Glass/Al/Si

Anodic bonding of Pyrex glass/Al/Si is an important bonding technique in micro/nanoelectromechanical systems (MEMS/NEMS) industry. The anodic bonding of Pyrex 7740 glass/Aluminum film/Silicon is completed at the temperature from 300 degrees C to 375 degrees C with a bonding voltage between 150 V and 450 V. The fractal patterns are formed in the intermediate Al thin film. This pattern has the fractal dimension of the typical two-dimensional diffusion-limited aggregation (2D DLA) process, and the fractal dimension is around 1.7. The fractal patterns consist of Al and Si crystalline grains, and their occurrences are due to the limited diffusion, aggregation, and crystallization of Si and Al atoms in the intermediate Al layers. The formation of the fractal pattern is helpful to enhance the bonding strength between the Pyrex 7740 glass and the aluminum thin film coated on the crystal silicon substrates.

Characteristics of the interface of a laser-quenched steel substrate and chromium electroplate

The interface of a laser-discrete-quenched steel substrate and as-deposited chromium electroplate was investigated by ion beam etching, dissolving-substrate-away and using a Vickers microhardness tester, in an attempt to reveal the mechanism that the service life of the chromium-coated parts is increased by the duplex technique of laser pre-quenching plus chromium post-depositing. The laser quenching of the steel substrate can reduce the steep hardness gradient at the substrate/chromium interface and improve the load-bearing capacity of chromium electroplate. Moreover, the laser quenching prior to plating has an extremely great effect on the morphologies and microstructure of the substrate/chromium interface: there is a transient interlayer at the original substrate/chromium interface while there is not at the laser-quenchedzone/chromium interface; the near-substrate surface microstructure and morphologies of the free-standing chromium electrodeposits, whose substrate was dissolved away with nital 30% in volume, inherit the periodically gradient characteristics of the laser-discrete-quenched substrate surface. (c) 2006 Elsevier B.V. All rights reserved.

Studies on the phase behavior of lyotropic liquid crystal in DAD/C4OH/n-C8H18/D2O system

The lytropic liquid crystals in dodecanic acid diethanolamine (DAD)/n-butanol (C4OH)/octane (n-C8H18)/deuteron (D2O) system were studied to determine the phase regions and were investigated by H-2-NMR spectroscopy,optical polarizing microscope and small-angle X-ray diffraction (SAXD) methods. The results indicate that the lamellar, hexagonal and cubic liquid crystals all exist in the above system. Keeping the weight ratio of DAD and C4OH constant,the microphase structure, H-2 quadruple splitting and the interlayer spacing are all changed with the addition of deuteron.

BONDING OF ALUMINA AND METAL USING BULK METALLIC GLASS FORMING ALLOY

Metal-alumina joints have found various practical applications in electronic devices and high technology industry. However, making of sound metal ceramic brazed couple is still a challenge in terms of its direct application in the industry. In this work we successfully braze copper with Al2O3 ceramic using Zr52.5Cu17.9Ni14.6Al10Ti5 bulk metallic glass forming alloy as filler alloy. The shear strength of the joints can reach 140 MPa, and the microstructrural analysis confirms a reliable chemical boning of the interface. The results show that the bulk metallic glass forming alloys with high concentration of active elements are prospective for using as filler alloy in metal-ceramic bonding.

Bonding Of Alumina And Metal Using Bulk Metallic Glass Forming Alloy

Metal-alumina joints have found various practical applications in electronic devices and high technology industry. However, making of sound metal ceramic brazed couple is still a challenge in terms of its direct application in the industry. In this work we successfully braze copper with Al2O3 ceramic using Zr52.5Cu17.9Ni14.6Al10Ti5 bulk metallic glass forming alloy as filler alloy. The shear strength of the joints can reach 140 MPa, and the microstructrural analysis confirms a reliable chemical boning of the interface. The results show that the bulk metallic glass forming alloys with high concentration of active elements are prospective for using as filler alloy in metal-ceramic bonding.

Numerical Studies of Topological Phases

The topological phases of matter have been a major part of condensed matter physics research since the discovery of the quantum Hall effect in the 1980s. Recently, much of this research has focused on the study of systems of free fermions, such as the integer quantum Hall effect, quantum spin Hall effect, and topological insulator. Though these free fermion systems can play host to a variety of interesting phenomena, the physics of interacting topological phases is even richer. Unfortunately, there is a shortage of theoretical tools that can be used to approach interacting problems. In this thesis I will discuss progress in using two different numerical techniques to study topological phases.

Recently much research in topological phases has focused on phases made up of bosons. Unlike fermions, free bosons form a condensate and so interactions are vital if the bosons are to realize a topological phase. Since these phases are difficult to study, much of our understanding comes from exactly solvable models, such as Kitaev's toric code, as well as Levin-Wen and Walker-Wang models. We may want to study systems for which such exactly solvable models are not available. In this thesis I present a series of models which are not solvable exactly, but which can be studied in sign-free Monte Carlo simulations. The models work by binding charges to point topological defects. They can be used to realize bosonic interacting versions of the quantum Hall effect in 2D and topological insulator in 3D. Effective field theories of "integer" (non-fractionalized) versions of these phases were available in the literature, but our models also allow for the construction of fractional phases. We can measure a number of properties of the bulk and surface of these phases.

Few interacting topological phases have been realized experimentally, but there is one very important exception: the fractional quantum Hall effect (FQHE). Though the fractional quantum Hall effect we discovered over 30 years ago, it can still produce novel phenomena. Of much recent interest is the existence of non-Abelian anyons in FQHE systems. Though it is possible to construct wave functions that realize such particles, whether these wavefunctions are the ground state is a difficult quantitative question that must be answered numerically. In this thesis I describe progress using a density-matrix renormalization group algorithm to study a bilayer system thought to host non-Abelian anyons. We find phase diagrams in terms of experimentally relevant parameters, and also find evidence for a non-Abelian phase known as the "interlayer Pfaffian".

Ictiólogos de la Argentina: Nemesio Amaro San Román

This series will include all those people who, by means of their contributions, great and small, played a part in the consolidation of ichthyology in Argentina. The general plan of this work consists of individual factsheets containing a list of works by each author, along with reference bibliography and, whenever possible, personal pictures and additional material. The datasheets will be published primarily in chronological order, although this is subject to change by the availability of materials for successive editions. This work represents another approach for the recovery and revalorization of those who set the foundations of Argentine ichthyology while in diverse historical circumstances. I expect this to be the beginning of a major work that achieves the description of such a significant part of the history of natural sciences in Argentina.

Effect of alumina and chromium interlayers on microstructures and optical properties of thin Ag films on glass substrates

Effects of alumina and chromium interlayers on the microstructure and optical properties of thin Ag films are investigated by using spectrophotometry, x-ray diffraction and AFM. The characteristics of Ag films in Ag/glass, Ag/Al2O3/glass and Ag/Cr/glass stacks are analysed. The results indicate that the insertion of an Al2O3 or Cr layer decreases the grains and influences the reflectance of Ag films. The reflectance of the Ag film can be increased by controlling the thickness of alumina interlayer. The stability of Ag films is improved and the adhesion of Ag films on glass substrates is enhanced by alumina as an interlayer.

LBO晶体上具有不同厚度过渡层的倍频增透膜的设计和制备

Design and preparation of frequency doubling antireflection coating with different thicknesses of interlayer were investigated for LiB₃O₅ (LBO) substrate. The design was based on the vector method. The thickness of the inserted SiO₂ interlayer could be changed in a wide range for the four-layer design with two zeros at 1064 and 532 nm. The coatings without any interlayer and with 0.1 quarter-wave (λ/4), 0.3 λ/4, 0.5 λ/4 SiO₂ interlayer were deposited respectively on LBO by using electron beam evaporation technique. All the prepared coatings with SiO₂ interlayer indicated satisfying optical behavior. This expanded our option for the thickness of an interlayer when coating on LBO substrate. The prepared films with SiO₂ interlayer showed better adhesion than that without any interlayer. The thickness of the interlayer affected the adhesion, the adhesion for the coating with 0.5 λ/4 SiO₂ interlayer was not as good as the other two.}

Al2O3和Cr过渡层对Ag膜光学性质及其附着力的影响

研究了在玻璃基底上镀制Al2O3和Cr过渡层对Ag膜反射率及附着力的影响.分光光度计测试了Ag膜的反射率,结果表明,与Cr过渡层相比,Al2O3过渡层对Ag膜反射率的降低相对较小;而且,随着Al2O3厚度的增加,Ag膜的反射率先增大后减小.XRD与AES测试表明,引入Al2O3或Cr可明显细化Ag晶粒,减弱Ag膜（111）织构;Al2O3作过渡层时,Al原子向Ag层中扩散显著;而Cr作过渡层时,只有少量Cr原子扩散进入Ag层.因此,Al2O3作过渡层能显著增强薄膜与玻璃基体之间的附着力.