Hot-working characteristics of Zircaloy-2 in the temperature range of 650–950°C

The hot-working characteristics of Zircaloy-2 have been studied in the temperature range of 650 to 950°C and in the strain-rate range of 10−3 to 102 s−1 using power dissipation maps which describe the variation of the efficiency of power dissipation, η = 2m /(m + 1) where m is the strain-rate sensitivity of flow stress. The individual domains exhibited by the map have been interpreted and validated by detailed metallographic investigations. Dynamic recrystallization occurs in the temperature range of 730 to 830°C and in the strain-rate range of 10−2 to 2 s−1. The peak efficiency occurs at 800°C and 0.1 s−1 which may be considered as the optimum hot-working parameters in the α-phase field of Zircaloy-2. Superplastic behaviour, characterized by a high efficiency of power dissipation is observed at temperatures greater than 860°C and at strain rates lower than 10−2 s−1. When deformed at 650°C and 10−3 s−1, the primary restoration mechanism is dynamic recovery, while at rates higher than 2s−1, the material exhibits microstructural instabilities in the form of localized shear bands.

Dynamic recrystallisation during hot working of Zr-2 center dot 5Nb: Characterisation using processing maps

The characteristics of the hot deformation of Zr-2.5Nb (wt-%) in the temperature range 650-950 degrees C and in the strain rate range 0.001-100 s(-1) have been studied using hot compression testing. Two different preform microstructures: equiaxed (alpha + beta) and beta transformed have been investigated. For this study, the approach of processing maps has been adopted and their interpretation carried out using the dynamic materials model. The efficiency of power dissipation given by [2m/(m + 1)], where m is the strain rate sensitivity, is plotted as a function of temperature and strain rate to obtain a processing map. A domain of dynamic recrystallisation has been identified in the maps of equiaxed (alpha + beta) and beta transformed preforms. In the case of equiaxed (alpha + beta), the stress-strain curves are steady state and the dynamic recrystallisation domain in the map occurs with a peak efficiency of 45% at 850 degrees C and 0.001 s(-1). On the other hand the beta transformed preform exhibits stress-strain curves with continuous flow softening. The corresponding processing map shows a domain of dynamic recrystallisation occurring by the shearing of alpha platelets followed by globularisation with a peak efficiency of 54% at 750 degrees C and 0.001 s(-1). The characteristics of dynamic recrystallisation are analysed on the basis of a simple model which considers the rates of nucleation and growth of recrystallised gains. Calculations show that these two rates are nearly equal and that the nucleation of dynamic recrystallisation is essentially controlled by mechanical recovery involving the cross-slip of screw dislocations. Analysis of flow instabilities using a continuum criterion revealed that Zi-2.5Nb exhibits flow localisation at temperatures lower than 700 degrees C and strain rates higher than 1 s(-1).

Neutron diffraction study of the coupling between spin, lattice, and structural degrees of freedom in 0.8BiFeO(3)-0.2PbTiO(3)

A powder neutron diffraction study was carried out on 0.8BiFeO(3)-0.2PbTiO(3) in the temperature range 27-1000 degrees C. The system exhibits magnetic transition at similar to 300 degrees C and a rhombohedral (R3c)-cubic (Pm3m) ferroelectric phase transition at similar to 650 degrees C. Anomalous variation in the lattice parameters and the octahedral tilt angle is observed across the magnetic transition temperature. In the magnetic phase, the c parameter is contracted and the octahedral tilt angle is slightly increased. The results suggest coupling between the spin, lattice and structural degrees of freedom. (C) 2011 American Institute of Physics. doi:10.1063/1.3555093]

Characterization of hot deformation behaviour of Zr---2.5Nb---0.5Cu using processing maps

The characteristics of hot deformation of beta-quenched Zr-2.5Nb-0.5Cu in the temperature range 650-1050 degrees C and in the strain rate range 0.001-100 s(-1) have been studied using hot compression testing. For this study, the approach of processing maps has been adopted and their interpretation done using the Dynamic Materials Model. The efficiency of power dissipation given by [2m/(m + 1)], where m is strain rate sensitivity, is plotted as a function of temperature and strain rate to obtain a processing map. The processing map for Zr-2.5Nb-0.5Cu within (alpha + beta) phase field showed a domain of dynamic recrystallization, occurring by shearing of alpha-platelets followed by spheroidization, with a peak efficiency of 48% at 750 degrees C and 0.001 s(-1). The stress-strain curves in this domain had features of continuous flow softening and all these are similar to that in Zr-2.5Nb alloy. In the beta-phase field, a second domain with a peak efficiency of 47% occurred at 1050 degrees C and 0.001 s(-1) and this domain is correlated with the superplasticity of beta-phase. The beta-deformation characteristics of this alloy are similar to that observed in pure beta-zirconium with large grain size. Analysis of flow instabilities using a continuum criterion revealed that the Zr-2.5Nb-0.5Cu exhibits flow localization at temperatures higher than 800 degrees C and strain rates higher than about 30 s(-1) and that the addition of copper to Zr-2.5Nb reduces its susceptibility to flow instability, particularly in the (alpha + beta) phase field.

RPS: Repeats in Protein Sequences

Repeats are two or more contiguous segments of amino acid residues that are believed to have arisen as a result of intragenic duplication, recombination and mutation events. These repeats can be utilized for protein structure prediction and can provide insights into the protein evolution and phylogenetic relationship. Therefore, to aid structural biologists and phylogeneticists in their research, a computing resource (a web server and a database), Repeats in Protein Sequences (RPS), has been created. Using RPS, users can obtain useful information regarding identical, similar and distant repeats (of varying lengths) in protein sequences. In addition, users can check the frequency of occurrence of the repeats in sequence databases such as the Genome Database, PIR and SWISS-PROT and among the protein sequences available in the Protein Data Bank archive. Furthermore, users can view the three-dimensional structure of the repeats using the Java visualization plug-in Jmol. The proposed computing resource can be accessed over the World Wide Web at http://bioserver1.physics.iisc.ernet.in/rps/.

Synthesis and structural characterization of perovskite 0.65Pb(Mg1/3Nb2/3)O-3-0.35PbTiO(3) nanotubes

We report the synthesis and structural characterization of 0.65Pb(Mg1/3Nb2/3)O-3-0.35PbTiO(3) (PMN-PT) nanotubes prepared by a novel sal-gel template method. X-ray diffraction (XRD) and selected-area electron diffraction (SAED) investigations demonstrated that the postannealed (650 degrees C for 1 h) PMN-PT nanotubes were polycrystalline with perovskite crystal structure. The field emission scanning electron microscope (FE-SEM) shows that as prepared PMN-PT nanotubes were hollow with diameter to be about 200 nm. High resolution transmission electron microscope (HRTEM) analysis confirmed that the obtained PMN-PT nanotubes made up of nanoparticles (10-20 nm) which were randomly aligned in the nanotubes. Energy-dispersive X-ray spectroscopy (EDX) analysis confirmed the stoichiometric 0.65Pb(Mg1/3Nb2/3)O-3-0.35PbTiO(3). The possible formation mechanism of PMN-PT nanotubes was proposed at the end. (C) 2011 Elsevier B.V. All rights reserved.

Strontium and calcium zirconyl citrates as precursors for the low-temperature synthesis of SrZrO3 and CaZrO3 fine powders

Synthesis and the thermal decomposition behavior of new molecular precursors, strontium, and calcium zirconyl citrates are presented. The pathway to the metazirconate formation has been found to proceed through a multistep process. The precursors yield SrZrO3 and CaZrO3 fine powders at temperatures as low as 650 degrees C. Physico-chemical, spectroscopic, thermoanalytical, and microscopic techniques have enabled the identification of the sequence of events leading to the perovskite formation and proposition of a thermolysis scheme. Retention of the molecular level mixing of the metal ions during the course of the precursor decomposition is supported by these techniques. Prior to the formation of MZrO3 (M = Sr and Ca) an ionic oxycarbonate, M2Zr2O5CO3 (M = SI. and Ca), intermediate is produced by the thermal decomposition of the citrate precursors.

The two-step positive temperature coefficient in resistance characteristics of n-(Ba,Pb)TiO3 ceramics created through inclusion of grain boundary modifier additives

Donor-doped n-(Ba,Pb)TiO3 polycrystalline ceramics exhibit distinctly two-step positive temperature coefficient of resistance (PTCR) characteristics when formulated with suitable combinations of B2O3 and Al2O3 as grain boundary modifiers by heterogeneous addition. B2O3 or Al2O3 when added singularly resulted in either steep or broad PTCR jumps respectively across the phase transition. The two-step PTCR is attributed to the activation of the acceptor states, created through B2O3 and Al2O3, for various temperature regimes above the Curie point (T-c). The changing pattern of trap states is evident from the presence of Ti4+-O--Al3+ type hole centres in the grain boundary layer regions, identified in the electron paramagnetic resonance (EPR) spectra. That charge redistribution occurs among the inter-band gap defect states on crossing the Curie temperature is substantiated by the temperature coefficient in the EPR results. Capacitance-voltage results clearly show that there is an increase in the density of trap states with the addition of B2O3 and Al2O3. The spread in energy values of these trap states is evident from the large change in barrier height (phi similar or equal to 0.25-0.6 eV) between 500 and 650 K.

Synthesis, X-ray structure and properties of (eta(6)-p-cymene)ruthenium(II) Schiff-base complexes of vinylpyridine and vinylimidazole ligands

Complexes of the formulation [(eta(6)-p-cymene)Ru(O-2-C6H4-CH=NC6H4-4-CH3)(L)](ClO4), where L is gamma-picoline, 4-vinylpyridine, 1-methylimidazole and 1-vinylimidazole have been prepared and characterised. The molecular structure of the vinylpyridine adduct has been determined by X-ray crystallography. The crystal belongs to the monoclinic space group P2(1) with the following cell dimensions for the C31H33CIN2O5Ru(M = 650.11): a = 10.890(2)Angstrom, b = 22.295(9)Angstrom, c = 12.930(2)Angstrom, beta = 109.30(2)degrees(3), V = 2964(l)Angstrom 3, Z = 4; D-c = 1.457g cm(-3), lambda(Mo-K alpha) = 0.7107 Angstrom; mu(Mo-K alpha)= 6.61 cm(-1); T = 293 K; R = 0.0359 (wR(2) = 0.0981) for 4819 reflections with I > 2 sigma(I). The structure shows the non-bonding nature of the double bond of the 4-vinylpyridine ligand in the complex in which the metal is bonded to the eta(6)-p-cymene, the N, O-bidentate chelating schiff-base and the unidentate N-donor pyridine ligands.

Role of La0.5Sr0.5COO3 template layers on dielectric and electrical properties of pulsed-laser ablated Pb(Nb2/3Mg1/3)O-3-PbTiO3 thin films

Relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) deposited on platinized silicon substrates with and without template layers were studied. Perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on bare Pt/Ti/SiO2/Si substrates. The films were initially grown at 300 degreesC using pulsed-laser ablation and subsequently annealed in a rapid thermal annealing furnace in the temperature range of 750-850 degreesC to induce crystallization. Comparison of microstructure of the films annealed at different temperatures showed change in perovskite phase formation and grain size etc. Results from compositional analysis of the films revealed that the films initially possessed high content of lead percentage, which subsequently decreased after annealing at temperature 750-850 degreesC. Films with highest perovskite content were found to form at 820-840 degreesC on Pt substrates where the Pb content was near stoichiometric. Further improvement in the formation of perovskite PMN-PT phase was obtained by using buffer layers of La0.5Sr0.5CoO3 (LSCO) on the Pt substrate. This resulted 100% perovskite phase formation in the films deposited at 650 degreesC. Dielectric studies on the PMN-PT films with LSCO template layers showed high values of relative dielectric constant (3800) with a loss factor (tan delta) of 0.035 at a frequency of 1 kHz at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Structural and dielectric behavior of pulsed laser ablated Sr(0.6)Ca(0.4)TiO(3) thin film and asymmetric multilayer of SrTiO(3) and CaTiO(3)

Homogeneous thin films of Sr(0.6)Ca(0.4)TiO(3) (SCT40) and asymmetric multilayer of SrTiO(3) (STO) and CaTiO(3) (CTO) were fabricated on Pt/Ti/SiO(2)/Si substrates by using pulsed laser deposition technique. The electrical behavior of films was observed within a temperature range of 153 K-373 K. A feeble dielectric peak of SCT40 thin film at 273 K is justified as paraelectric to antiferroelectric phase transition. Moreover, the Curie-Weiss temperature, determined from the epsilon'(T) data above the transition temperature is found to be negative. Using Landau theory, the negative Curie-Weiss temperature is interpreted in terms of an antiferroelectric transition. The asymmetric multilayer exhibits a broad dielectric peak at 273 K. and is attributed to interdiffusion at several interfaces of multilayer. The average dielectric constants for homogeneous Sr(0.6)Ca(0.4)TiO(3) films (similar to 650) and asymmetric multilayered films (similar to 350) at room temperature are recognized as a consequence of grain size effect. Small frequency dispersion in the real part of the dielectric constants and relatively low dielectric losses for both cases ensure high quality of the films applicable for next generation integrated devices. (C) 2011 Elsevier B.V. All rights reserved.

Influence of Tempered Microstructures on the Transformation Behaviour of Cold Deformed and Intercritically Annealed Medium Carbon Low Alloy Steel

This research is focused on understanding the role of microstructural variables and processing parameters in obtaining optimised dual phase structures in medium carbon low alloy steels. Tempered Martensite structures produced at 300, 500, and 650 degrees C, were cold rolled to varied degrees ranging from 20 to 80% deformation. Intercritical annealing was then performed at 740, 760, and 780 degrees C for various time duration ranging from 60 seconds to 60 minutes before quenching in water. The transformation behaviour was studied with the aid of optical microscopy and hardness curves. From the results, it is observed that microstructural condition, deformation, and intercritical temperatures influenced the chronological order of the competing stress relaxation and decomposition phase reactions which interfered with the rate of the expected alpha -> gamma transformation. The three unique transformation trends observed are systematically analyzed. It was also observed that the 300 and 500 degrees C tempered initial microstructures were unsuitable for the production of dual structures with optimized strength characteristics.

Thermoelectric properties of indium filled and germanium doped Co4Sb12 skutterudites

In-filled and Ge-doped Co4Sb12 skutterudites materials were synthesized by an induction melting process which was followed by annealing at 650 degrees C for 7 days. A structural, compositional, and morphological study was carried out by X-ray diffraction (XRD), electron probe micro analysis (EPMA), and scanning electron microscopy (SEM). The formation of a single skutterudite phase (delta-CoSb3) was confirmed by XRD and the composition of all the samples was verified by EPMA. The homogeneity and morphology of the samples was observed by potential Seebeck microprobe (PSM) and SEM, respectively. The PSM result confirmed the inhomogeneity of the samples. The temperature dependence of the Seebeck coefficient, electrical conductivity, and thermal conductivity were measured in the temperature range of 300-650 K. The samples of In0.16Co4Sb12-xGex (x = 0.05, 0.1, and 0.2) show a negative Seebeck coefficient confirming an n-type conductivity and the In0.16Co4Sb11.7Ge0.3 sample shows a positive Seebeck coefficient confirming a p-type conductivity. There was a change in the Seebeck coefficient from an n-type to a p-type at the doping concentration of x = 0.3 due to the excess Ge which increases in hole carrier concentration. Electrical conductivity decreases with an increase in Ge doping concentrations and with increases in temperature due to the bipolar effect. Thermal conductivity increases with an increase in carrier concentration and decreases when the temperature is increased. The highest ZT = 0.58 was achieved by In0.16Co4 Sb11.95Ge0.05 at 673K and In-filled and Ge-doped Co4Sb12 was not effective in improving the figure of merit. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3677982]

Studies towards synthesis, evolution and alignment characteristics of dense, millimeter long multiwalled carbon nanotube arrays

We report the synthesis of aligned arrays of millimeter long carbon nanotubes (CNTs), from benzene and ferrocene as the molecular precursor and catalyst respectively, by a one-step chemical vapor deposition technique. The length of the grown CNTs depends on the reaction temperature and increases from similar to 85 mu m to similar to 1.4 mm when the synthesis temperature is raised from 650 to 1100 degrees C, while the tube diameter is almost independent of the preparation temperature and is similar to 80 nm. The parallel arrangement of the CNTs, as well as their tube diameter can be verified spectroscopically by small angle X-ray scattering (SAXS) studies. Based on electron diffraction scattering (EDS) studies of the top and the base of the CNT films, a root growth process can be deduced.

Influence of annealing on oxidation, microstructure and mechanical properties of Ni-49Ti films

Thin films of Ni-49 at.% Ti were deposited by DC magnetron sputtering on silicon substrates at 300 degrees C. The as-deposited amorphous films were annealed at a vacuum of 10(-6) mbar at various temperatures between 300 and 650 degrees C to study the effect of annealing on microstructure and mechanical properties. The as-deposited films showed partial crystallization on annealing at 500 degrees C. At 500 degrees C, a distinct oxidation layer, rich in titanium but depleted in Ni, was seen on the film surface. A gradual increase in thickness and number of layers of various oxide stoichiometries as well as growth of triangular shaped reaction zones were seen with increase in annealing temperature up to 650 degrees C. Nanoindentation studies showed that the film hardness values increase with increase in annealing temperature up to 600 degrees C and subsequently decrease at 650 degrees C. The results were explained on the basis of the change in microstructure as a result of oxidation on annealing.