999 resultados para 22-213


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 目的 探讨大蹼铃蟾抗菌肽22 (Maximin22) 对膀胱癌 细胞株HLA2DR 及HLA2ABC 表达的影响, 并与TNF2α、 IFN2α进行比较。方法 采用肿瘤细胞培养方法,流式细胞 仪检测各实验样品对膀胱癌细胞株T24 、BIU287 、SCaBER 的HLA2DR 及HLA2ABC 表达的影响。结果 Maximin22 对 不同的膀胱癌细胞株在小剂量下即有抑制作用,并呈剂量相 关性,各实验样品未见对各膀胱癌细胞株的HLA2DR 表达 有影响,Maximin22 、TNF2α对HLA2ABC 的表达均无影响; IFN2α则对HLA2ABC 的表达有上调作用。结论 Maximin2 2 、TNF2α抗癌机制与提高肿瘤细胞HLA2DR、ABC 的表达无 关, IFN2α可通过提高肿瘤细胞HLA2ABC 的表达提高T 细 胞对膀胱肿瘤的识别杀伤能力。

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A novel trypsin inhibitor termed BATI was purified to homogeneity from the skin extracts of toad Bufo andrewsi by successive ion-exchange, gel-filtration and reverse-phase chromatography. BATI is basic single chain glycoprotein, with apparent molecular weight of 22 kDa in SDS-PAGE. BATI is a thermal stable competitive inhibitor and effectively inhibits trypsin's catalytic activity on peptide substrate with the inhibitor constant (K-i) value of 14 nM and shows no inhibitory effect on chymotrypsin, thrombin and elastase. The N-terminal sequence of BATI is EKDSITD, which shows no similarity with other known trypsin inhibitors. (c) 2005 Elsevier Ltd. All rights reserved.

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Development of collaborative approach to identify coastal water pollution issues and develop remedial strategies. Establish effective ecosystem indicator framework to measure progress toward sustaining the BOBLME ecosystem health

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The workshop agenda included: presentations from collaborative institutions, national governments and resource persons; a draft scoping study on nutrient loading; and an ecosystem approach to pollution management was tested.

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The goals of the workshop were to: conduct an interactive workshop for characterizing Indian coastal ecosystems; verification of the ecosystem characterisation report for the East coast of India; and development of ecosystem characterisation for the west coast of India based on ecological/biophysical systems.

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于AD批量导入至AEzhangdi

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Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.