Studying the influence of substitutional elements on mechanical behavior of Alloy 718

In nickel-based superalloys, substitutional solute species have a strong impact on in service mechanical properties as well as on oxidation and corrosion resistances. In alloy 718, recent studies carried out by tensile tests highlighted the fact that refractory solute species are able to interact strongly with mobile dislocations during plastic deformation, generating dynamic strain ageing, and, in wide ranges of tests temperatures and strain rates, Portevin-Le Chatelier effect. The precise nature of the substitutional element responsible for such a dynamic interaction is still subject to debate. We addressed this question by means of mechanical spectroscopy studies of alloy 718 and various related alloys corresponding to monitored changes in the chemical composition. Only a single internal friction relaxation peak has been observed for all the studied alloys. By analyzing the damping behavior of these alloys at different imposed solicitation frequencies by sweeping a large temperatures range, the activation energies of the relaxation process and the type of mechanism involved have been determined. The process is a "Zener relaxation" in the alloys, i.e. a substitutional atoms dipole reorientation under applied stress. The results tend to prove that Niobium is not involved in the relaxation process whereas Molybdenum content seems to play an important role in the relaxation intensity.

Superconducting micro-bearings

This paper presents research into superconducting Micro-Bearings for MEMS systems. Advanced silicon processing techniques developed for the Very Large Scale Integration (VLSI) industry have been exploited in recent years to enable the production of micro-engineered moving mechanical systems. These devices commonly known as Micro-ElectroMechanical Systems (MEMS) have many potential advantages. In many respects the effect of scaling a machine from macro-sized to micro-sized are either neutral or beneficial. However in one important respect the scaling produces a severely detrimental effect. That respect is in the tribology and the subsequent wear on the high speed rotating machines. This leads to very short device lifetimes. This paper presents results obtained from a MEMS motor supported on superconducting bearings. The bearings are self-positioning, relying on, the Meissner effect to provide a levitation force which moves the rotor into position and flux pinning to provide stability thereafter. The rotor is driven by a simple electrostatic type motor in which photo resist is used to pattern the motor poles directly onto the rotor. © 2005 IEEE.

Seeded infiltration and growth of bulk YBCO nano-composites

The seeded infiltration and growth (SIG) technique offers near-net shape processing of bulk superconductors with significant improvement in reduced Y2BaCuO5 (Y-211) inclusion size, reduced shrinkage, reduced porosity and improved current density compared to samples fabricated by top seeded melt growth (TSMG). Y2Ba4CuMOy phases where M=Nb, Mo, W, Ta, etc., have been shown to form nano-scale inclusions in the YBa2Cu3Oy (Y-123) phase matrix and to contribute to enhanced magnetic flux pinning in these materials. In this paper, we describe the introduction of Y2Ba 4CuWOy nano-scale inclusions into bulk superconductors processed by the seeded infiltration growth process. Critical current density, Jc, in excess of 105 A/cm2 at 77 K in self-field is observed for samples containing Y2Ba 4CuWOy. © 2011 IEEE.

Microstructure and superconducting properties of single grains of Y-Ba-Cu-O containing Y-2411(M) and Y2O3

Y-Ba-Cu-O (YBCO) single grains have the potential to generate large trapped magnetic fields for engineering applications, and research on the processing and properties of this material has attracted interest world-wide over the past 20 years. In particular, the introduction of flux pinning centers to the large grain microstructure to improve its current density Jc, and hence trapped field, has been investigated extensively. Y2Ba 4CuMO2 [Y-2411(M)], where M = Nb, Ta, Mo, W, Ru, Zr, Bi and Ag, has been discovered recently to form very effective flux pinning centers due primarily to its ability to form nano-size inclusions in the superconducting phase matrix. However, the addition of the Y-2411(M) phase to the precursor composition complicates the melt-processing of single grains. The addition of Y2O3 to the precursor composition, however, broadens the growth window of single YBCO grains containing Y-2411 (M). We report an investigation of the microstructures and superconducting properties of single grains of this composition grown by top seeded melt growth (TSMG). © 2010 IEEE.

Critical current densities of MOCVD tapes for different current directions

The critical current density Jc of an MOCVD/IBAD coated conductor was measured on tracks patterned longitudinally (L) and transversely (T) to the tape direction. Despite the samples' vicinality no dependence J c of on track direction was found for magnetic fields applied perpendicular to the film plane. In angular out-of-plane measurements the previously reported asymmetry due to tilted precipitate planes was observed in an L track, whereas curves from a T track were almost perfectly symmetric with similarly high absolute values of Jc. At low fields the effects of surface pinning were seen. Our results show that in most scenarios the current carrying capability is equally as good parallel and perpendicular to the tape direction, which is highly relevant for ROEBEL cables. In measurements where the magnetic field was swept in the film plane the anisotropy was found to be significantly higher than for MOD/RABiTS samples, which we explain by the different morphology of grain boundaries in the tapes. At low temperatures Jc of a T track exhibited a clear signature of vortex channeling. © 2010 IEEE.

Vortex deformation and breaking in superconductors: a microscopic description

Vortex breaking has traditionally been studied for non-uniform critical current densities, although it may also appear due to non-uniform pinning force distributions. In this article we study the case of a high-pinning/low-pinning/high-pinning layered structure. We have developed an elastic model for describing the deformation of a vortex in these systems in the presence of a uniform transport current density J for any arbitrary orientation of the transport current and the magnetic field. If J is above a certain critical value, J(c), the vortex breaks and a finite effective resistance appears. Our model can be applied to some experimental configurations where vortex breaking naturally exists. This is the case for YBa2Cu3O7-delta (YBCO) low-angle grain boundaries and films on vicinal substrates, where the breaking is experienced by Abrikosov-Josephson vortices (AJV) and Josephson string vortices (SV), respectively. With our model, we have experimentally extracted some intrinsic parameters of the AJV and SV, such as the line tension is an element of(l) and compared it to existing predictions based on the vortex structure.

Flux line lattice structure and behavior in antiphase boundary free vicinal YBa2Cu3O7-delta thin films

Field angle dependent critical current, magneto-optical microscopy and high resolution electron microscopy studies have been performed on YBa2Cu3O7-delta thin films grown on miscut substrates. High resolution electron microscopy images show that the films studied exhibited clean epitaxial growth with a low density of antiphase boundaries and stacking faults. Any antiphase boundaries (APBs) formed near the film substrate interface rapidly healed rather than extending through the thickness of the film. Unlike vicinal films grown on annealed substrates, which contain a high density of antiphase boundaries, magneto-optical imaging showed no filamentary flux penetration in the films studied. The flux penetration is, however, asymmetric. This is associated with intrinsic pinning of flux strings by the tilted a-b planes and the dependence of the pinning force on the angle between the local field and the a-b planes. Field angle dependent critical current measurements exhibited the striking vortex channeling effect previously reported in vicinal films. By combining the results of three complementary characterization techniques it is shown that extended APB free films exhibit markedly different critical current behavior compared to APB rich films. This is attributed to the role of APB sites as strong pinning centers for Josephson string vortices between the a-b planes. (C) 2003 American Institute of Physics.

Growth of large sized y Ba 2Cu 3O 7 single crystals using the top seeded melt growth process

Neutron scattering experiments are fundamental to the study of magnetic order and related phenomena in a range of superconducting and magnetic materials. Traditional methods of crystal growth, however, do not yield single crystals of sufficient size for practical neutron scattering measurements. In this paper, we demonstrate the growth of relatively pure, large Y Ba 2Cu 3O 7 single crystals up to 30mm in diameter using a top seeded melt growth process. The characterization of the microstructural and magnetic properties of these crystals indicates that they contain <2% of impurity phases and, hence, exhibit only weak flux pinning behaviour. © 2012 IOP Publishing Ltd.

700V smart trench IGBT with monolithic over-voltage and over-current protecting functions

An advanced 700V Smart Trench IGBT with monolithically integrated over-voltage and over-current protecting circuits is presented in this paper. The proposed Smart IGBT comprises a sense IGBT, a low voltage lateral n-channel MOSFET (M 1), an avalanche diode (D av), and poly-crystalline Zener diodes (ZD) and resistor (R poly). Mix-mode transient simulations with MEDICI have proven the functionalities of the protecting circuits when the device is operating under abnormal conditions, such as Unclamped Inductive Switching (UIS) and Short Circuit (SC) condition. A Trench IGBT process is used to fabricate this device with total 11 masks including one metal mask only. The characterizations of the fabricated device exhibit the clamping capability of the avalanche diode and voltage pull-down ability of the MOSFET. © 2012 IEEE.

Electron spin resonance signature of the oxygen vacancy in HfO 2

The oxygen vacancy has been inferred to be the critical defect in HfO 2, responsible for charge trapping, gate threshold voltage instability, and Fermi level pinning for high work function gates, but it has never been conclusively identified. Here, the electron spin resonance g tensor parameters of the oxygen vacancy are calculated, using methods that do not over-estimate the delocalization of the defect wave function, to be g xx = 1.918, g yy = 1.926, g zz = 1.944, and are consistent with an observed spectrum. The defect undergoes a symmetry lowering polaron distortion to be localized mainly on a single adjacent Hf ion. © 2012 American Institute of Physics.

Electrical conduction and optical properties of doped silicon-on-insulator photonic crystals

We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 1018 / cm3, are acceptable for practical devices with Q factors as high as 4× 104. © 2011 American Institute of Physics.

Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

Band alignment of resistive random access memory (RRAM) switching material Ta2O5 and different metal electrode materials was examined using high-resolution X-ray photoelectron spectroscopy. Schottky and hole barrier heights at the interface between electrode and Ta2O 5 were obtained, where the electrodes consist of materials with low to high work function (Φ m, v a c from 4.06 to 5.93 eV). Effective metal work functions were extracted to study the Fermi level pinning effect and to discuss the dominant conduction mechanism. An accurate band alignment between electrodes and Ta2O5 is obtained and can be used for RRAM electrode engineering and conduction mechanism study. © 2013 American Institute of Physics.

Characterization of vertical Mo/diamond Schottky barrier diode from non-ideal I-V and C-V measurements based on MIS model

In this study, we investigated non-ideal characteristics of a diamond Schottky barrier diode with Molybdenum (Mo) Schottky metal fabricated by Microwave Plasma Chemical Vapour Deposition (MPCVD) technique. Extraction from forward bias I-V and reverse bias C- 2-V measurements yields ideality factor of 1.3, Schottky barrier height of 1.872 eV, and on-resistance of 32.63 mö·cm2. The deviation of extracted Schottky barrier height from an ideal value of 2.24 eV (considering Mo workfunction of 4.53 eV) indicates Fermi level pinning at the interface. We attributed such non-ideal behavior to the existence of thin interfacial layer and interface states between metal and diamond which forms Metal-Interfacial layer-Semiconductor (MIS) structure. Oxygen surface treatment during fabrication process might have induced them. From forward bias C-V characteristics, the minimum thickness of the interfacial layer is approximately 0.248 nm. Energy distribution profile of the interface state density is then evaluated from the forward bias I-V characteristics based on the MIS model. The interface state density is found to be uniformly distributed with values around 1013 eV - 1·cm- 2. © 2013 Elsevier B.V.

Fishtail effects and improved critical current density in polycrystalline bulk MgB2 containing carbon nanotubes

Bulk, polycrystalline MgB2 samples containing 2.5 wt.% multi-walled carbon nanotubes (CNTs) have been prepared by conventional solid state reaction at 800 °C. The effect of Mg precursor powders composed of two different particle sizes on the critical current density (Jc) of the as-sintered samples has been investigated. An enhancement of Jc at high field has been observed in MgB2 samples containing CNTs prepared with fine Mg powders, whereas the values of Jc in the sample prepared using the coarser Mg powders was slightly decreased. These results contrast significantly with measurements on pure, undoped, MgB2 samples prepared from the same Mg precursor powders. They suggest that carbon substitution into the MgB2 lattice, which accounts for increased flux pinning, and therefore Jc, is more effective in precursor Mg powders with a larger surface area. Rather surprisingly, the so-called fishtail effect, observed typically in MgB2 single crystals and in the (RE)BCO family of high temperature superconductors (HTSs), was observed in both sets of CNT-containing polycrystalline samples as a result of lattice defects associated with C substitution. Significantly, analytical fits to the data for each sample suggest that the same flux pinning mechanism accounts for the fishtail effect in polycrystalline MgB2 and (RE)BCO. © 2013 Elsevier B.V. All rights reserved.

Controllable nanodomain defects in ferroelectric/ferroelastic biferroic thin films

Ferroelectric thin films have been intensively studied at the nanometre scale due to the application in many fields, such as non-volatile memories. Enhanced piezo-response force microscopy (E-PFM) was used to investigate the evolution of ferroelectric and ferroelastic nanodomains in a polycrystalline thin film of the simple multi-ferroic PbZr0.3Ti0.7O 3 (PZT). By applying a d.c. voltage between the atomic force microscopy (AFM) tip and the bottom substrate of the sample, we created an electric field to switch the domain orientation. Reversible switching of both ferroelectric and ferroelastic domains towards particular directions with predominantly (111) domain orientations are observed. We also showed that along with the ferroelectric/ferroelastic domain switch, there are defects that also switch. Finally, we proposed the possible explanation of this controllable defect in terms of flexoelectricity and defect pinning. © 2013 IEEE.