The effect of inclined soil layers on surface vibration from underground railways using a semi-analytical approach

Ground vibration due to underground railways is a significant source of disturbance for people living or working near the subways. The numerical models used to predict vibration levels have inherent uncertainty which must be understood to give confidence in the predictions. A semi-analytical approach is developed herein to investigate the effect of soil layering on the surface vibration of a halfspace where both soil properties and layer inclination angles are varied. The study suggests that both material properties and inclination angle of the layers have significant effect ( ± 10dB) on the surface vibration response. © 2009 IOP Publishing Ltd.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.

Semi-analytic slope delay model for CMOS switch-level timing verification

A novel slope delay model for CMOS switch-level timing verification is presented. It differs from conventional methods in being semianalytic in character. The model assumes that all input waveforms are trapezoidal in overall shape, but that they vary in their slope. This simplification is quite reasonable and does not seriously affect precision, but it facilitates rapid solution. The model divides the stages in a switch-level circuit into two types. One corresponds to the logic gates, and the other corresponds to logic gates with pass transistors connected to their outputs. Semianalytic modeling for both cases is discussed.

A Semi-Empirical Equation of Penetration Depth on Concrete Target Impacted by Ogive-Nose Projectiles

In this paper, the penetration process of ogive-nose projectiles into the semi-infinite concrete target is investigated by the dimensional analysis method and FEM simulation. With the dimensional analysis, main non-dimensional parameters which control the penetration depth are obtained with some reasonable hypothesis. Then, a new semi-empirical equation is present based on the original work of Forrestal et al., has only two non-dimensional combined variables with definite physical meanings. To verify this equation, prediction results are compared with experiments in a wide variation region of velocity. Then, a commercial FEM code, LS-DYNA, is used to simulate the complex penetration process, that also show the novel semi-empirical equation is reasonable for determining the penetration depth in a concrete target.

Semi-weight function method on computation of stress intensity factors in dissimilar materials

Semi-weight function method is developed to solve the plane problem of two bonded dissimilar materials containing a crack along the bond. From equilibrium equation, stress and strain relationship, conditions of continuity across interface and free crack surface, the stress and displacement fields were obtained. The eigenvalue of these fields is lambda. Semi-weight functions were obtained as virtual displacement and stress fields with eigenvalue-lambda. Integral expression of fracture parameters, K-I and K-II, were obtained from reciprocal work theorem with semi-weight functions and approximate displacement and stress values on any integral path around crack tip. The calculation results of applications show that the semi-weight function method is a simple, convenient and high precision calculation method.

Semi-gas kinetics model for performance modeling of flowing chemical oxygen-iodine lasers (COIL)

A semi-gas kinetics (SGK) model for performance analyses of flowing chemical oxygen-iodine laser (COIL) is presented. In this model, the oxygen-iodine reaction gas flow is treated as a continuous medium, and the effect of thermal motions of particles of different laser energy levels on the performances of the COIL is included and the velocity distribution function equations are solved by using the double-parameter perturbational method. For a premixed flow, effects of different chemical reaction systems, different gain saturation models and temperature, pressure, yield of excited oxygen, iodine concentration and frequency-shift on the performances of the COIL are computed, and the calculated output power agrees well with the experimental data. The results indicate that the power extraction of the SGK model considering 21 reactions is close to those when only the reversible pumping reaction is considered, while different gain saturation models and adjustable parameters greatly affect the output power, the optimal threshold gain range, and the length of power extraction.

Estimación del comportamiento de los principales índices reproductivos de un hato Cebú, bajo explotación semi-intensiva en el trópico seco de Nicaragua

El presente estudio se llevó a cabo utilizando datos de registros reproductivo de los años 1976 a1985, de un hato de vacas Cebú en el departamento de Rivas, ubicado a 11º, 26, Latitud Norte; 85º, 50`, longitud Oeste y una elevación de 70 m.s.n.m; con una temperatura, humedad relativa y precipitación pluvial promedio en los últimos 14 años de 28, 89oc,-86.69% y 1,654.5mm anuales, respectivamente. Las variables en estudio fueron: edad de incorporación (EI), Edad al primer parto (EPP), intervalo parto-primera inseminación (IPPI), periodo de servicio (PS), Intervalo parto-parto (IPP), y nùmero de servicios por concepción (NSC); con promedios de 44+/-10 meses, 54+/4 meses, 202+/87 días, 2201+/9-98 días, 513+/-102 días y 1.54+/-0.03 servicios, respectivamente. En el ANDEVA para EI, resulto significativo el año de nacimiento, mes de nacimientos y unidad de producción estatal (UPE); para la EPP el año, mes y UPE resultaron no significativos, a diferencia de la covariable edad de incorporación; para IPPI Y PS resultaron significativos el año de parto, mes de parto, UPE y covariable cada de parto; para el IPP resulto significativo el año y no significativo el mes, UPE y covariables edad al parto. Las correlaciones lineales entre: NSC con IPP, PS; IPP con PS, IPPI y EP; IPPI y EP; resultaron significativas con un coeficiente de: +0.250, +0.232, +0.121, +0.934, +0.859, +0.201, +0.918, -0.246 y -0.297, respectivamente. Las regiones para la PS con IPPI, IPPI con EP, NSC con EP, IPP con NSC y PS, resultaron significativas con coeficiente: +0.97 días, -1.16 días /mes, +0.0044 servicios/mes, +4.02 días/servicio y +0.93 días, respectivamente.

Estudio de los principales índices productivos de un hato cebú en explotación semi-intensiva en el trópico seco de Nicaragua

El presente trabajo se realizó en los registros de un Hato Cebú en la empresa Genética Jorge Camargo, ubicada a11 ½ kilómetros de la Ciudad de Rivas, a una latitud 11 26.N y una longitud de 85 50’w y una elevación de msnm, con temperatura promedio anual, humedad relativa y precipitación promedio anual en los últimos catorce años de 26.22C, 80.23% y 1.150mm respectivamente. Las variables en estudio fueron PNC, EDC, PMDC, PDC205D, GMDD con promedio de 31.004+2.67kg, 6.039-+ 0.937 mes, 409.84+ 36.98 kg, 181.5+ 28.99 kg, 0741+_ 0.159 kg respectivamente. En el ANDEVA las variables PNC, EDC, PDC205D, GMDD resultaron significativas para el año de parto (AP) para PNC, EDC, PMDC, PDC205D, GMDD resultaros significativas el mes de parto (MP) y para EDC resulto significativo la EMP no así para PNC, GMDD. Las correlaciones lineales EDC con PNC resulto ser significativa y con un valor de -0.06 de la misma manera la EDC, GMDD, EMP, EMDC con PDC205D resultaron ser significativa con valor de -0.637 y -0.20 respectivamente. La dependencia y valor de -0.637 y -0.20 respectivamente. La dependencia lineal de PNC con SC es significativa con un valor -1.01 kg/kg, asimismo el PDC205D con GMDD, PNC y EMDC resultan significativos y con valor de 1.0 kg/kg, 1.0 Kg/kg y -.025 kg/mes respectivamente, así como también la GMDD con PNC resulto ser significativa, así como también la GMDD con PNC resultó ser significativa y con valor de -0.002 kg/kg.