911 resultados para high power laser


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A variety of applications exist for reverse saturable absorbers (RSAs) in the area of optical pulse processing and computing. An RSA can be used as power limiter/pulse smoother and energy limiter/pulse shortner of laser pulses. A combination of RSA and saturable absorber (SA) can be used for mode locking and pulse shaping between high power laser amplifiers in oscillator amplifier chain. Also, an RSA can be used for the construction of a molecular spatial light modulator (SLM) which acts as an input/output device in optical computers. A detailed review of the theoretical studies of these processes is presented. Current efforts to find RSAs at desired wavelength for testing these theoretical predictions are also discussed.

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High power converters are used in variable speed induction motor drive applications. Riding through a short term power supply glitch is becoming an important requirement in these power converters. The power converter uses a large number of control circuit boards for its operation. The control power supply need to ensure that any glitch in the grid side does not affect any of these control circuit boards. A power supply failure of these control cards results in shut down of the entire system. The paper discusses the ride through system developed to overcome voltage sags and short duration outages at the power supply terminals of the control cards in these converters. A 240VA non-isolated, bi-directional buck-boost converter has been designed to be used along with a stack of ultracapacitors to achieve the same. A micro-controller based digital control platform made use of to achieve the control objective. The design of the ultracapacitor stack and the bidirectional converter is described the performance of the experimental set-up is evaluated.

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Studies on redox supercapacitors employing electronically conducting polymers are of great importance for hybrid power sources and pulse power applications. In the present study, polyaniline (PANI) has been potentiodynamically deposited on stainless steel substrate and characterized in a gel polymer electrolyte (GPE). Use of the GPE facilitates a voltage limit of the capacitor to 1 V, instead of 0.75 V in aqueous electrolytes. From charge-discharge studies of the solid-state PANI capacitors, a specific capacitance of 250 F g(-1) has been obtained at a specific power of 7.5 kW kg(-1) of PANI. The values of specific capacitance and specific power are considerably higher than those reported in the literature. High energy and high power characteristics of the PANI are presented. (C) 2002 The Electrochemical Society.

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Load commutated inverter (LCI)-fed wound field synchronous motor drives are used for medium-voltage high-power drive applications. This drive suffers from drawbacks such as complex starting procedure, sixth harmonic torque pulsations, quasi square wave motor current, notches in the terminal voltages, etc. In this paper, a hybrid converter circuit, consisting of an LCI and a voltage source inverter (VSI), is proposed, which can be a universal high-power converter solution for wound field synchronous motor drives. The proposed circuit, with the addition of a current-controlled VSI, overcomes nearly all of the shortcomings present in the conventional LCI-based system besides providing many additional advantages. In the proposed drive, the motor voltage and current are always sinusoidal even with the LCI switching at the fundamental frequency. The performance of the drive is demonstrated with detailed experimental waveforms from a 15.8-hp salient pole wound field synchronous machine. Finally, a brief description of the control scheme used for the proposed circuit is given.

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Gate driver is an integral part of every power converter, drives the power semiconductor devices and also provides protection for the switches against short-circuit events and over-voltages during shut down. Gate drive card for IGBTs and MOSFETs with basic features can be designed easily by making use of discrete electronic components. Gate driver ICs provides attractive features in a single package, which improves reliability and reduces effort of design engineers. Either case needs one or more isolated power supplies to drive each power semiconductor devices and provide isolation to the control circuitry from the power circuit. The primary emphasis is then to provide simplified and compact isolated power supplies to the gate drive card with the requisite isolation strength and which consumes less space, and for providing thermal protection to the power semiconductor modules for 3-� 3 wire or 4 wire inverters.

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This paper deals with the coupling of High Power Microwaves with a buried twisted pair cable. The electric field at a distance of 1km from the HPM antenna has been computed and is used for further computation of induced voltage and current. It is found that the peak of the induced current and voltage in a buried unshielded twisted pair cable at a distance of 1km from an HPM antenna of power level 10GW is 20A and 2kV respectively.

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This paper presents an analysis and comparison between two circuit topologies of the 3-phase, 3-level unity power factor (Vienna) rectifier on the basis of packaging issues and semiconductor power losses. The analysis indicates the suitability of one particular circuit variant due to restrictions on switching frequency at higher power levels. A comparison is also done between hysteresis and carrier based PWM strategies for current control of the rectifier, along with experimental evaluation of the control strategies on a hardware prototype of the rectifier. The comparison indicates that the carrier based modulation strategy is better suited for use with higher order filters that are utilized in high power applications.

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Before installation, a voltage source converter is usually subjected to heat-run test to verify its thermal design and performance under load. For heat-run test, the converter needs to be operated at rated voltage and rated current for a substantial length of time. Hence, such tests consume huge amount of energy in case of high-power converters. Also, the capacities of the source and loads available in the research and development (R&D) centre or the production facility could be inadequate to conduct such tests. This paper proposes a method to conduct heat-run tests on high-power, pulse width modulated (PWM) converters with low energy consumption. The experimental set-up consists of the converter under test and another converter (of similar or higher rating), both connected in parallel on the ac side and open on the dc side. Vector-control or synchronous reference frame control is employed to control the converters such that one draws certain amount of reactive power and the other supplies the same; only the system losses are drawn from the mains. The performance of the controller is validated through simulation and experiments. Experimental results, pertaining to heat-run tests on a high-power PWM converter, are presented at power levels of 25 kVA to 150 kVA.

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Semiconductor device junction temperatures are maintained within datasheet specified limits to avoid failure in power converters. Burn-in tests are used to ensure this. In inverters, thermal time constants can be large and burn-in tests are required to be performed over long durations of time. At higher power levels, besides increased production cost, the testing requires sources and loads that can handle high power. In this study, a novel method to test a high power three-phase grid-connected inverter is proposed. The method eliminates the need for high power sources and loads. Only energy corresponding to the losses is consumed. The test is done by circulating rated current within the three legs of the inverter. All the phase legs being loaded, the method can be used to test the inverter in both cases of a common or independent cooling arrangement for the inverter phase legs. Further, the method can be used with different inverter configurations - three- or four-wire and for different pulse width modulation (PWM) techniques. The method has been experimentally validated on a 24 kVA inverter for a four-wire configuration that uses sine-triangle PWM and a three-wire configuration that uses conventional space vector PWM.

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The damage mechanism of a cracked material due to laser beam thermal shock is an important problem when the interactions of high power laser beam with materials are studied. The transient thermal stress intensity factors (TSIFs) for a center crack in an infinite plate subjected to laser beam thermal shock are investigated. When the crack is in the heat affected zone, the compressive thermal stress causes the crack surface to come into contact with each other over a certain contact length, but the high tensile stresses around the crack tip tend to open the crack. In this case, the problem may be treated as a pair of embedded cracks problem with a smooth closure condition of the center crack. The TSIFs and the crack contact lengths are calculated with different laser beam spatial shapes. The TSIFs induced by thermal shock are in marked different from those induced by general mechanical loading.

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