Determination of the embedded thermo-optical expansion coefficients of PbTe and ZnSe thin film infrared multilayers

This paper reports the first derived thermo-optical properties for vacuum deposited infrared thin films embedded in multilayers. These properties were extracted from the temperature-dependence of manufactured narrow bandpass filters across the 4-17 µm mid-infrared wavelength region. Using a repository of spaceflight multi-cavity bandpass filters, the thermo-optical expansion coefficients of PbTe and ZnSe were determined across an elevated temperature range 20-160 ºC. Embedded ZnSe films showed thermo-optical properties similar to reported bulk values, whilst the embedded PbTe films of lower optical density, deviate from reference literature sources. Detailed knowledge of derived coefficients is essential to the multilayer design of temperature-invariant narrow bandpass filters for use in non-cooled infrared detection systems. We further present manufacture of the first reported temperature-invariant multi-cavity narrow bandpass filter utilizing PbS chalcogenide layer material.

Layered oxychalcogenides: structural chemistry and thermoelectric properties

Layered oxychalcogenides have recently emerged as promising thermoelectric materials. The alternation of ionic oxide and covalent chalcogenide layers found in these materials often results in interesting electronic properties, and also facilitates the tuning of their properties via chemical substitution at both types of layers. This review highlights some common structure types found for layered oxychalcogenides and their interrelationships. This review pays special attention to the potential of these materials for thermoelectric applications, and provides an overview of the thermoelectric properties of materials of current interest, including BiCuSeO.

Raman spectroscopy analysis of structural photoinduced changes in GeS(2) + Ga(2)O(3) thin films

Photoexpansion and photobleaching effects have been observed in amorphous GeS(2) + Ga(2)O(3) (GGSO) thin films, when their surfaces were exposed to UV light. The photoinduced changes on the surface of the samples are indications that the structure has been changed as a result of photoexcitation. In this paper, micro-Raman, energy dispersive X-ray analysis (EDX) and backscattering electrons (BSE) microscopy were the techniques used to identify the origin of these effects. Raman spectra revealed that these phenomena are a consequence of the Ge-S bonds` breakdown and the formation of new Ge-O bonds, with an increase of the modes associated with Ge-O-Ge bonds and mixed oxysulphide tetrahedral units (S-Ge-O). The chemical composition measured by EDX and BSE microscopy images indicated that the irradiated area is oxygen rich. So, the present paper provides fundamental insights into the influence of the oxygen within the glass matrix on the considered photoinduced effects. (C) 2010 Elsevier B.V. All rights reserved.

Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses

We report the fabrication of relief diffraction gratings recorded on a surface of photosensitive Ga10Ge25S65 and Ga5Ge25As5S65 glasses by means of interference of two UV laser beams at 351 nm. The diffraction efficiency (eta) of first diffraction order was measured. Atomic-force-microscope (AFM) was used to perform a 3D imaging analysis of the sample surface topography that shows the superposition of an imprinted grating over the topography of the glass. The change in the absorption edge and the refractive index has been evaluated and a structural approach of the relief grating on the glass surface has been discussed.

Photosensitivity in antimony based glasses

New glass forming systems based on Sb2O3-SbPO4 has been explored. These glasses present higher thermal stability against devitrification and higher refractive index than chalcogenide glasses. Under irradiation, using Ar-laser 350nm wavelength and 50 mW power density, change on the coloration is observed. Structural and electronic modifications around Sb cations induced by such treatment have been characterized by XANES measurements at the L-Sb edges. on the one hand, XANES spectra, at the LJ edge, show a decrease of the coordination number for Sb atoms induced by exposure to light indicating a breaking of Sb-O bonds in the glassy network. on the other hand, XANES spectra, at the Lt edge, suggest a change in the oxidation state of Sb atoms. These modifications associated to the photodarkening of the glass is reversible either after a couple of days or after heating the glass at the glass transition temperature, T-g.

The influence of oxygen in the photoexpansion of GaGeS glasses

Irreversible photoexpansion and photobleaching effect has been observed in amorphous Ga10Ge25S65 glass when its surface was exposed to light with energy greater than the band gap, 3.52 eV. The magnitude of the expansion of GaGeS glasses depends on the exposure conditions. Extended X-ray absorption fine structure (EXAFS) spectroscopy and Rutherford backscattering spectrometry (RBS) have been used to identify the chemical nature of the glass samples before and after illumination. The quantitative analysis of the EXAFS data leads to a two-shell model of 0.5 oxygen atoms at 2.01 Angstrom and 3.6 sulfur atoms at a 2.20 Angstrom. RBS technique demonstrated that chemical composition of the glass surface after irradiation is oxygen rich. The existence of Ge-O bonds in the glass after illumination was also confirmed by infrared measurements. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Photo-induced effects in Ge25Ga10S65 glasses studied by XPS and XAS

The present paper focuses on the structural, electronic, and compositional properties of Ge25Ga10S65 glasses before and after UV illumination in air using X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) techniques. The XPS Ge 3d spectra reveal the existence of Ge-O bonds in the surface region of illuminated glass. In the case of this sample, XAS O K-edge spectra showed the formation of an enriched region of oxygen atoms in the glass bulk, indicating a different bonding structure of oxygen at the surface and in the bulk of the glass. Moreover, the structural changes that occur after UV illumination in the glass sample are identified as the formation of a homogeneous germanium oxide surface layer followed by an intermediary Ge25Ga10S65-yOz subsurface region. (c) 2005 Elsevier B.V. All rights reserved.

An ultra stable glass system for optical fiber devices

In this paper a modified chalcogenide glass was studied by X-ray powder diffraction, differential thermal analysis, infrared and Raman scattering spectroscopies. The study of this new matrix opens new perspectives to fabricate Pr3+-doped fibers to operate as an optical amplifier in the 1.3 mum telecommunications window. The Pr3+-doped 70Ga(2)S(3)-30La(2)S(3) glass was modified through the substitution of La2S3 by La2O3, which improves the thermal stability of these glasses without any modification of phonon energy. The possibility to pull a fiber from this glass system without any devitrification is easily achieved.

Totally visible transparent chloro-sulphide glasses based on Ga2S3-GeS2-CsCI

In this paper, the influence on optical properties of alkali halides such as CsCl in a covalent glassy matrix has been investigated. Chalcogenide glasses belonging to the (GeS2)-(Ga2S3)-CsCI system with high ratio of CsCl present an entire transparency in the visible range. These glasses maintain good transmission up to 12 mu m. Furthermore, the thermo-mechanical properties and the glass hygroscopicity have been investigated as function of the CsCl amount. This new generation of glasses presents a great interest for optical application. They could be used both for passive applications (multi-spectral imaging) and active applications for rare-earth doping due to their good transmission in the visible range, increasing optical pumping possibilities.

Photoinduced effect in Ga-Ge-S based thin films

Glassy films of Ga10Ge25S65 with 4 mu m thickness were deposited on quartz substrates by electron beam evaporation. Photoexpansion (PE) (photoinduced increase in volume) and photobleaching (PB) (blue shift of the bandgap) effects have been examined. The exposed areas have been analyzed using perfilometer and an expansion of 1.7 mu m (Delta V/V approximate to 30%) is observed for composition Ga10Ge25S65 exposed during 180 min and 3 mW/cm(2) power density. The optical absorption edge measured for the film Ge25Ga10S65 above and below the bandgap show that the blue shift of the gap by below bandgap photon illumination is considerable higher (Delta E-g = 440 meV) than Delta E-g induced by above bandgap illumination (Delta E-g = 190 meV). The distribution of the refraction index profile showed a negative change of the refraction index in the irradiated samples (Delta n = -0.6). The morphology was examined using a scanning electron microscopy (SEM). The chemical compositions measured using an energy dispersive analyzer (EDX) indicate an increase of the oxygen atoms into the irradiated area. Using a Lloyd's mirror setup for continuous wave holography it was possible to record holographic gratings using the photoinduced effects that occur in them. Diffraction efficiency up to 25% was achieved for the recorded gratings and atomic force microscopy images are presented. (c) 2005 Elsevier B.V. All rights reserved.

Photoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 system

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Experimental observation of infrared spectral enlargement in As 2S3 suspended core microstructured fiber

The development of chalcogenide glasses fibers for application in the infrared wavelength region between 1 and 10 μm is a big opportunity. More particularly, the possibility to generate efficient non linear effects above 2 μm is a real challenge. We present in this work the elaboration and optical characterizations of suspended core microstructured optical fibers elaborated from the As2S3 chalcogenide glass. As an alternative to the stack and draw process a mechanical machining has been used to the elaboration of the preforms. The drawing of these preforms into fibers allows reaching a suspended core geometry, in which a 2.5 μm diameter core is linked to the fiber clad region by three supporting struts. The zero dispersion wavelength is thus shifted towards 2 μm. At 1.55 μm our fibers exhibit a dispersion around -250 ps/nm/km. Their background level of losses is below 0,5 dB/m. By pumping them at 1.55 μm with a ps source, we observe self phase modulation as well as Raman generation. Finally a strong spectral enlargement is obtained with an average output power of - 5 dbm. © 2010 SPIE.

Vidros óxidos contendo átomos pesados para aplicações em óptica não linear e fotônica na região do infravermelho

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Estudo de composições vítreas no sistema ternário Ga-Ge-Te para o armazenamento de dados

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Towards the development of fiber lasers for the 2 to 4 nanom spectral region

A growing number of applications are calling for compact laser sources operating in the mid-infrared spectral region. A review of our recent work on monolithic fiber lasers (FL) based either on the use of rare-earth fluoride fibers or on Raman gain in both fluoride and chalcogenide glass fibers is presented. Accordingly, an erbium-doped double clad fluoride glass all-FL operating in the vicinity of 3 μm is shown. In addition, we present recent results on the first demonstrations of both fluoride and chalcogenide Raman fiber lasers operating at 2.23 and 3.34 μm, respectively. It is shown that based on this approach, monolithic FLs could be developed to cover the whole 2 to 4 μm spectral band.