Radiative Behaviour of Gd2O3:Er/Yb nanoparticles under near infrared illumination

Upconverting nanoparticles have attracted much attention in science recently, specifically in view of medical and biological applications such as live imaging of cell temperatures or cancer treatment. The previously studied system of gadolinium oxide nanorods co-doped with erbium and ytterbium and decorated with different number densities of gold nanoparticles has been studied. So far, these particles have been proven as efficient nanothermometers in a temperature range from 300 up to 2000 K. In this work, a more detailed study on the morphological and radiative behaviour of these particles has been conducted. It was found that the laser power threshold for the onset of the black body radiation decreases strongly with the increase in the gold concentration. The temperature of the onset itself seems to remain approximately constant. The heating efficiency was determined to increase significantly with the gold concentration. The morphological study revealed that the temperature at the black body radiation threshold was not enough to induce any significant transformation in neither the nanorods nor the gold nanoparticles, as was expected from comparison with literature. However, significant changes in radiative properties and the morphology were detected for powders that underwent strong laser heating until the emission of brightly visible black body radiation.

Hydrothermal phase equilibria studies in Ln2O3---H2O systems and synthesis of cubic lanthanide oxides

Phase diagrams for the systems Ln2O3---H2O (Ln = La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) studied at 5000 to 10,000 psi and temperature range of 200–900°C, show that Ln(OH)3 hexagonal and LnOOH monoclinic are the only stable phases from Nd to Ho. The cubic oxide phase (C---Ln2O3) is stable for systems of Er, Tm, Yb and Lu, with no evidence of its equilibrium in the systems of lighter lanthanides. Using strong acids, HNO3 and HCOOH, as mineralisers the cubic oxides could be stabilised from Eu down to Lu. Solid solution phases of CeO2---Y2O3 and Eu2O3---Y2O3 have also been synthesised with HNO3 as mineraliser, since these compounds have promising use as solid electrolyte and phosphor materials respectively.

Stability of CU(2)Ln(2)O(5) compounds - Comparison, assessment and systematics

Phase diagram studies show that at ambient pressure only one ternary oxide, Cu(2)Ln(2)O(5), is stable in the ternary systems Cu-Ln-O (Ln = Tb, Dy, Ho, Er, Tm, Yb, Lu) at high temperatures. The crystal structure of Cu(2)Ln(2)O(5) can be described as a zig-zag arrangement of one-dimensional Cu2O5 chains parallel to-the a-axis with Ln atoms occupying distorted octahedral sites between these chains. Four sets of emf measurements on Gibbs energy of formation of Cu(2)Ln(2)O(5) (Ln = Tb, Dy, Ho, Er, Tm, Yb, Lu; Y) from component binary oxides and one set of high-temperature solution calorimetric data on enthalpy of formation have been reported in the literature. Except for Cu2Y2O5, the measured values for the Gibbs energies of formation of all other Cu(2)Ln(2)O(5) compounds fall in a narrow band (+/-1 kJ mol(-1)) and indicate a regular increase in stability with decreasing ionic radius of the lanthanide ion. The values for the second law enthalpy of formation, derived from the temperature dependence of emf obtained in different studies, show larger differences, as high as 25 kJ mol(-1) for Cu2Tm2O5. Though associated with an uncertainty of +/-4 kJ mol(-1), the calorimetric measurements help to identify the best set of emf data. The trends in thermodynamic data correlate well with the global instability index (GII) based on the overall deviation from the valence sum rule. Low values for the index calculated from crystallographic information indicate higher stability. Higher values are indicative of the larger stress in the structure.

Thermoelectric properties of indium filled and germanium doped Co4Sb12 skutterudites

In-filled and Ge-doped Co4Sb12 skutterudites materials were synthesized by an induction melting process which was followed by annealing at 650 degrees C for 7 days. A structural, compositional, and morphological study was carried out by X-ray diffraction (XRD), electron probe micro analysis (EPMA), and scanning electron microscopy (SEM). The formation of a single skutterudite phase (delta-CoSb3) was confirmed by XRD and the composition of all the samples was verified by EPMA. The homogeneity and morphology of the samples was observed by potential Seebeck microprobe (PSM) and SEM, respectively. The PSM result confirmed the inhomogeneity of the samples. The temperature dependence of the Seebeck coefficient, electrical conductivity, and thermal conductivity were measured in the temperature range of 300-650 K. The samples of In0.16Co4Sb12-xGex (x = 0.05, 0.1, and 0.2) show a negative Seebeck coefficient confirming an n-type conductivity and the In0.16Co4Sb11.7Ge0.3 sample shows a positive Seebeck coefficient confirming a p-type conductivity. There was a change in the Seebeck coefficient from an n-type to a p-type at the doping concentration of x = 0.3 due to the excess Ge which increases in hole carrier concentration. Electrical conductivity decreases with an increase in Ge doping concentrations and with increases in temperature due to the bipolar effect. Thermal conductivity increases with an increase in carrier concentration and decreases when the temperature is increased. The highest ZT = 0.58 was achieved by In0.16Co4 Sb11.95Ge0.05 at 673K and In-filled and Ge-doped Co4Sb12 was not effective in improving the figure of merit. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3677982]

Thermoelectric properties of Indium doped Cu2GeSe3

Cu2Ge1-xInxSe3 (x = 0, 0.05, 0.1, 0.15) compounds were prepared by a solid state synthesis. The powder X-ray diffraction pattern of the undoped sample revealed an orthorhombic phase. The increase in doping content led to the appearance of additional peaks related to cubic and tetragonal phases along with the orthorhombic phase. This may be due to the substitutional disorder created by Indium doping. Scanning Electron Microscopy micrographs showed a continuous large grain growth with low porosity, which confirms the compaction of the samples after hot pressing. Elemental composition was measured by Electron Probe Micro Analyzer and confirmed that all the samples are in the stoichiometric ratio. The electrical resistivity (rho) systematically decreased with an increase in doping content, but increased with the temperature indicating a heavily doped semiconductor behavior. A positive Seebeck coefficient (S) of all samples in the entire temperature range reveal holes as predominant charge carriers. Positive Hall coefficient data for the compounds Cu2InxGe1-xSe3 (x = 0, 0.1) at room temperature (RT) confirm the sign of Seebeck coefficient. The trend of rho as a function of doping content for the samples Cu2InxGe1-xSe3 with x = 0 and 0.1 agrees with the measured charge carrier density calculated from Hall data. The total thermal conductivity increased with rising doping content, attributed to an increase in carrier thermal conductivity. The thermal conductivity revealed 1/T dependence, which indicates the dominance of Umklapp phonon scattering at elevated temperatures. The maximum thermoelectric figure of merit (ZT) = 0.23 at 723 K was obtained for Cu2In0.1Ge0.9Se3. (C)2014 Elsevier Ltd. All rights reserved.

In-doped multifilled n-type skutterudites with ZT=1.8

In this paper we maximize the thermoelectric (TE) figure of merit, ZT, of n-type skutterudites, (In,Sr,Ba,Yb)(y)Co4Sb12, via three different routes: (i) find the optimum fraction of In as fourth filler (ii) check the influence of powder particle, grain, and crystallite size on the TE properties and (iii) check thermal stability. Filled n-type (Sr, Ba, Yb)(y)Co4Sb12 was mixed in three different proportions with In0.4Co4Sb12, ball milled (regular or high-energy (HB) ball milling) and hot-pressed. Particle size analyses and SEM pictures of the broken surfaces of the hot pressed samples document that only HB produces uniform particles/grains with average crystallite sizes similar to 100 nm, proven by transmission electron microscopy. X-ray Rietveld refinements combined with EDX indicate that in all cases indium entered the icosahedral voids of the skutterudite. Temperature dependent physical properties of all three regularly ball-milled samples show that increasing In-content infers an increasing electrical resistivity, increasing Seebeck coefficient but a decreasing total thermal conductivity. Although ZT (823 K) is in the same range as for the sample without In, the ZT values in the whole temperature range are higher and consequently the TE-conversion efficiency, eta is at least 10% higher. Annealing the samples at 600 degrees C for three days shows minor changes in structure and thermoelectric properties, indicating TE stability. The HB sample, due to uniformly small particles, equally sized grains and crystallites, exhibits a high power factor (4.4 mW/m K-2 at 730 K) and a very low thermal conductivity leading to an outstanding high ZT = 1.8 at 823 K (eta(max) = 17.5%). (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

调Q及连续掺Yb光纤激光器中的自锁模研究

在用半导体激光器抽运的单包层掺Yb调Q光纤激光器中观察到了清晰稳定的自锁模脉冲序列。脉冲包络形状为调Q脉冲。每个锁模脉冲的幅值由其在调Q脉冲中的相应位置决定。经过分析，认为自相位调制是调Q光纤激光器中产生锁模的主要原因。自相位调制的存在使得光脉冲的频谱被展宽，当这种展宽和腔的模式间隔相差不多时，腔内的模式便能相互作用，直到它们之间产生一个固定的相位关系。也即形成锁模。在此基础上。去掉声光晶体，并用两个光栅作为腔镜，实现了全光纤法布里-珀罗(F-P)腔锁模光纤激光器。改变腔结构，分别采用光栅和光纤反射圈作为

一种制作掺Yb相移光纤光栅激光器的实验方案

采用遮挡法引入相移制作了掺Yb相移光纤光栅(PS-FBG)。在制作光栅的过程中,将其作为激光器的谐振腔,通过监测激光器的输出功率来确定相移大小。当激光器的输出功率开始下降时,停止曝光,此时引入的相移为π/2。为了使光栅的特性尽快稳定下来需要对光栅进行退火,这将导致引入的相移小于π/2。为了弥补退火过程中引起的相移降低,需要对退火后的光栅进行二次曝光,以使光栅的相移恢复π/2。利用该方法制作了一只光纤光栅激光器。当抽运功率为100 mW时,获得了25 mW的输出功率,信噪比(SNR)为60 dB。在1 h内

Strong visible up-conversion emissions and thermometric applications of Er3+-Yb3+ codoped Al2O3 prepared by the sol-gel method

The Er3+-Yb3+ codoped Al2O3 has been prepared by the sol-gel method using the aluminium isopropoxide [Al(OC3H7)(3)]-derived Al2O3 sols with addition of the erbium nitrate [Er(NO3)(3) center dot 5H(2)O] and ytterbium nitrate [Yb(NO3)(3) center dot 5H(2)O]. The phase structure, including only two crystalline types of doped Al2O3 phases, theta and gamma, was obtained for the 1 mol% Er3+ and 5 mol% Yb3+ codoped Al2O3 at the sintering temperature of 1,273 K. By a 978 nm semiconductor laser diodes excitation, the visible up-conversion emissions centered at about 523, 545, and 660 nm were obtained. The temperature dependence of the green up-conversion emissions was studied over a wide temperature range of 300-825 K, and the reasonable agreement between the calculated temperature by the fluorescence intensity ratio (FIR) theory and the measured temperature proved that Er3+-Yb3+ codoped Al2O3 plays an important role in the application of high temperature sensor.

三维立体显示用稀土掺杂氧卤碲酸盐玻璃

制备了一种新的Er^3+／Tm^3+/Yb^3+共掺氧卤碲酸盐玻璃。研究了基质玻璃的热稳定性能、Raman光谱和上转换发光。发现：氧卤碲酸盐玻璃具有好的热稳定性能和低的声子能量，在980nmLD激发下，可同时观察到明显的蓝色(476nm)、绿色(530nm和545nm)和红色(656nm)上转换发光。上转换蓝光(476nm)是由于Tm^3+离子1^G4→3^3H6跃迁，上转换的绿光(530nm和545nm)是由于Er^3+离子2^H11/2→4^I15／2和4^S3/2→4^I15/2跃迁，上转换红光(6

Yb：铅锌镧碲酸盐玻璃的热学、光谱和激光性质

研究了摩尔组分为70TeO2-(20-x)ZnO-xPbO-5La2O3-2.5K2O-2．5Na2O(x=0，5，10，15，20)的新型多元铅锌镧碲酸盐激光玻璃，外掺Yb2O3为玻璃摩尔组分的1％，测试了试样的物理性质及吸收光谱、荧光光谱和荧光寿命，计算了Yb^3+的吸收截面、受激发射截面、荧光有效线宽等光谱参数，结果表明：该系列玻璃都具有良好的热学稳定性((Tx-Tg)>195℃，高于TZN玻璃(118℃))；当X=15时，样品具有较好的光谱性质：高的受激发射截面(1．25pm^2)、长的荧光寿命(