Luminescence properties of electron-hole-droplets in pure and doped germanium

This work contains 4 topics dealing with the properties of the luminescence from Ge.

The temperature, pump-power and time dependences of the photoluminescence spectra of Li-, As-, Ga-, and Sb-doped Ge crystals were studied. For impurity concentrations less than about 10¹⁵cm^-3, emissions due to electron-hole droplets can clearly be identified. For impurity concentrations on the order of 10¹⁶cm^-3, the broad lines in the spectra, which have previously been attributed to the emission from the electron-hole-droplet, were found to possess pump-power and time dependent line shape. These properties show that these broad lines cannot be due to emission of electron-hole-droplets alone. We interpret these lines to be due to a combination of emissions from (1) electron-hole- droplets, (2) broadened multiexciton complexes, (3) broadened bound-exciton, and (4) plasma of electrons and holes. The properties of the electron-hole-droplet in As-doped Ge were shown to agree with theoretical predictions.

The time dependences of the luminescence intensities of the electron-hole-droplet in pure and doped Ge were investigated at 2 and 4.2°K. The decay of the electron-hole-droplet in pure Ge at 4.2°K was found to be pump-power dependent and too slow to be explained by the widely accepted model due to Pokrovskii and Hensel et al. Detailed study of the decay of the electron-hole-droplets in doped Ge were carried out for the first time, and we find no evidence of evaporation of excitons by electron-hole-droplets at 4.2°K. This doped Ge result is unexplained by the model of Pokrovskii and Hensel et al. It is shown that a model based on a cloud of electron-hole-droplets generated in the crystal and incorporating (1) exciton flow among electron-hole-droplets in the cloud and (2) exciton diffusion away from the cloud is capable of explaining the observed results.

It is shown that impurities, introduced during device fabrication, can lead to the previously reported differences of the spectra of laser-excited high-purity Ge and electrically excited Ge double injection devices. By properly choosing the device geometry so as to minimize this Li contamination, it is shown that the Li concentration in double injection devices may be reduced to less than about 10¹⁵cm^-3 and electrically excited luminescence spectra similar to the photoluminescence spectra of pure Ge may be produced. This proves conclusively that electron-hole-droplets may be created in double injection devices by electrical excitation.

The ratio of the LA- to TO-phonon-assisted luminescence intensities of the electron-hole-droplet is demonstrated to be equal to the high temperature limit of the same ratio of the exciton for Ge. This result gives one confidence to determine similar ratios for the electron-hole-droplet from the corresponding exciton ratio in semiconductors in which the ratio for the electron-hole-droplet cannot be determined (e.g., Si and GaP). Knowing the value of this ratio for the electron-hole-droplet, one can obtain accurate values of many parameters of the electron-hole-droplet in these semiconductors spectroscopically.

Optical multichannel-scale range-tunable Fourier-transforming system: experiment

The authors have demonstrated the principle of a novel optical multichannel-scale range-tunable Fourier-transforming system. The experimental results show good agreement with the theoretical analysis.

Novel Mach-Zehnder interferometer structure for tunable optical interleaver

A novel optical interleaver scheme based on nested optical glass pairs is proposed. The assembly of pairs behaves as a cascaded Mach-Zehnder interferometer. The interleaver, with simple structure, low cost, and compact size, can be easily implemented with inexpensive material and mature preparation technology. Small channel spacing (<= 50 GHz), high isolation (<-30 dB), a wide, flat passband and stop band (> 2/11 period), and center-frequency tunability can be obtained simultaneously. An optimum design of a 50-GHz tunable interleaver based on this structure is given as an example. Its environmental temperature sensitivity and fabrication tolerance are also analyzed. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

Tunable transverse superresolution with phase-only pupil filters

A new set of pure phase filters for realizing transverse superresolution is presented in this paper. The filters, whose significant features are their ability to tune and their simplicity, consist of one half-wave plate between two quarter-wave plates; the half-wave plate is made of two zones that can rotate with respect to each other. By rotating any zone of the half-wave plate, the central lobe width of the irradiance point spread function (PSF) in the transverse direction can be tunably reduced. At the same time, the axial intensity distribution is analysed in detail.