Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE

Non-polar a-plane GaN films were grown on an r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The effect of growth temperature on structural, morphological and optical properties has been studied. The growth of non-polar a-plane (1 1 - 2 0) orientation of the GaN epilayers were confirmed by high resolution X-ray diffraction (HRXRD) study. The X-ray rocking curve (XRC) full width at half maximum of the (1 1 - 2 0) reflection shows in-plane anisotropic behavior and found to decrease with increase in growth temperature. The atomic force micrograph (AFM) shows island-like growth for the film grown at a lower temperature. Surface roughness has been decreased with increase in growth temperature. Room temperature photoluminescence shows near band edge emission at 3.434-3.442 eV. The film grown at 800 degrees C shows emission at 2.2 eV, which is attributed to yellow luminescence along with near band edge emission. (C) 2010 Elsevier B.V. All rights reserved.

(Ba3MTiMO9)-Ti-III-O-V (M-III = Fe, Ga, Y, Lu, M-V = Nb, Ta, Sb) perovskite oxides Synthesis, structure and dielectric properties

We describe the synthesis structures and dielectric properties of new perovskite oxides of the formula (Ba3MTiMO9)-Ti-III-O-V for M-III = Fe Ga Y Lu and M-V = Nb Ta Sb While M-V = Nb and Ta oxides adopt disordered/partially ordered 3C perovskite structures where M-III/Ti/M-V metal-oxygen octahedra are corner connected the M-V = Sb oxides show a distinct preference for the 6H structure where Sb-V/Ti-IV metal-oxygen octahedra share a common face forming (Sb Ti)O-9 dimers that are corner-connected to the (MO6)-O-III octahedra The preference of antimony oxides (Sb-V 4d(10)) for the 6H structure which arises from a special Sb-V-O chemical bonding that tends to avoid linear Sb-O-Sb linkages unlike Nb-V/Ta-V d(0) atoms which prefer similar to 180 degrees Nb/Ta-O-Nb/Ta linkages - is consistent with the crystal chemistry of M-V-O oxides in general The dielectric properties reveal a significant difference among Mill members All the oxides with the 3C structure excepting those with Mill = Fe show a normal low loss dielectric behaviour with epsilon = 20-60 in the temperature range 50-400 degrees C the M-III = Fe members with this structure (M-V = Nb Ta) display a relaxor-like ferroelectric behaviour with large E values at frequencies <= 1 MHz (50-500 degrees C) (C) 2010 Elsevier Masson SAS All rights reserved

An electron diffraction study of quasicrystals in Ti-37 at% Mn and Ti-24 at% Mn-13 at% Fe alloys

Electron diffraction studies were carried out to establish the icosahedral phase formation in rapidly quenched Ti-37 at% Mn and Ti-24 at% Mn-13 at% Fe alloys. Distortions in the diffraction spots and diffuse intensities in the diffraction patterns were investigated. The existence of a rational approximant structure and a decagonal like phase are also reported.

Mechanical properties of B-modified Ti-6Al-4V alloys

Minor addition of B to the Ti-6Al-4V alloy reduces the prior beta grain size by more than an order of magnitude. TiB formed in-situ in the process has been noted to decorate the grain boundaries. This microstructural modification influences the mechanical behavior of the Ti-6Al-4V alloy significantly. In this paper, an overview of our current research on tensile properties, fracture toughness as well as notched and un-notched fatigue properties of Ti-6Al-4V-xB with x varying between 0.0 to 0.55 wt.% is presented. A quantitative relationship between the microstructural length scales and the various mechanical properties have been developed. Moreover, the effect of the presence of hard and brittle TiB has also been studied.

A study of cubic bismuth oxides of the type bi(26-X)m(X)O(40-delta) (m=ti, mn, fe, co, ni or pb) related to gamma-bi2O3

A structural investigation of cubic oxides (space group I23) of the formula Bi(26-x)M(x)O(40-delta) (M = Ti, Mn, Fe, Co, Ni and Pb) related to the Y-Bi2O3 phase has been carried out by the Rietveld profile analysis of high-resolution X-ray powder diffraction data in order to establish the cation distributions. Compositional dependence of the cation distribution has been examined in the case of Bi26-xCoxO40-delta (1 < x < 16). The study reveals that in Bi(26-X)M(X)O(40-delta) with M = Ti, Mn, Fe, Co or Pb, the M cations tend to occupy tetrahedral (2a) sites when x < 2 while the octahedral (24f) sites are shared by the excess Co or Ni cations with Bi atoms when x > 2. Also experimental magnetic moments of Mn, Co and Ni derivatives have been used to establish the valence state and distribution of these cations.

Flow Instabilities and fracture in Ti-6Al-4V deformed in compression at 298 K to 673 K

Uniaxial compression tests were conducted on Ti-6Al-4V specimens in the strain-rate range df 0.001 to 1 s(-1) and temperature range of 298 to 673 K. The stress-strain curves exhibited a peak flow stress followed by flow softening. Up to 523 K, the specimens cracked catastrophically after the flow softening started. Adiabatic shear banding was observed in this regime. The fracture surface exhibited both mode I and II fracture features. The state of stress existing in a compression test specimen when bulging occurs is responsible for this fracture. The instabilities observed in the present tests are classified as ''geometric'' in nature and are state-of-stress dependant, unlike the ''intrinsic'' instabilities, which are dependant on the dynamic constitutive behavior of the material.

Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire

Microstructural and superconducting properties of YBa2Cu3O7-x thin films grown in situ on bare sapphire by pulsed laser deposition using YBa2Cu3O7-x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730 degrees C on sapphire have shown very significant improvement over the undoped YBa2Cu3O7-x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1.2 x 10(6) A/cm(2) at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties.

Texture Evolution in Boron Modified Ti-6Al-4V Alloy

Owing to their high strength-to-weight ratio, excellent mechanical properties and corrosion resistance, titanium (Ti) and its alloys, especially (alpha+beta) alloys like Ti-6Al-4V is the backbone materials for aerospace, energy, and chemical industries. Trace boron addition (similar to 0.1 wt. %) to the alloy Ti-6Al-4V produces a reduction in as-cast grain size by roughly an order of magnitude resulting in enhanced ductility, higher stiffness, strength and good fracture resistance. Boron addition could also affect the evolution of texture and microstructure in the material. The solidification microstructures of Boron free as well as Boron containing Ti-6Al-4V are found to be almost homogeneous from periphery towards the center of as-cast ingot in terms of both alpha-colony size and distribution. Boron addition substantially reduces alpha-colony size (similar to 50-80 mu m). A gradual change in alpha texture from periphery towards the center has been observed with orientations close to specific texture components suggesting the formation of texture zones. The mechanism of texture evolution can be visualized as a result of variant selection during solidification through (alpha+beta) phase field.

Processing of an α-2 aluminide alloy, Ti---24Al---11Nb

Compressive stress-strain curves have been generated over a range of temperatures (900-1100-degrees-C and strain rates (0.001-100 s-1) for two starting structures consisting of lath alpha2 and equiaxed alpha2 in a Ti-24Al-11Nb alloy. The data from these tests have been analysed in terms of a dynamic model for processing. The results define domains of strain rate and temperature in which dynamic recrystallization of alpha2 occurs for both starting structures. The rate controlling process for dynamic recrystallization is suggested to be cross-slip in the alpha2 phase. A region of processing instability has also been defined within which shear bands form in the lath structure. Recrystallization of the beta phase is shown to occur for different combinations of strain rate and temperature from those in which the alpha2 phase recrystallizes dynamically

Effect of microstructure on the creep behaviour of Ti-24Al-11Nb

In this investigation, the influence of microstructure on the high temperature creep behaviour of Ti-24Al-11Nb alloy has been studied. Different microstructures are produced by devising suitable heat treatments from the beta phase field. Creep tests are conducted in the temperature range of 923-1113 K, over a wide stress range at each temperature, employing the impression creep technique. The creep behaviour is found tb be sensitive to the crystallographic texture as well as to the details of microstructure. Best creep resistance is shown when the microstructure contains smaller alpha(2) plates and a lower beta volume fraction. This can be understood in terms of the dislocation barriers offered by alpha(2) beta boundaries and the case of plastic flow in the beta phase at high temperatures.

Coherent phonons in pyrochlore titanates A(2)Ti(2)O(7) (A = Dy, Gd, Tb): A phase transition in Dy2Ti2O7 at 110 K

We study the generation of coherent optical phonons in spin-frustrated pyrochlore single crystals Dy2Ti2O7, Gd2Ti2O7, and Tb2Ti2O7 using femtosecond laser pulses (65 fs, 1.57 eV) in degenerate time-resolved transmission experiments as a function of temperature from 4 to 296 K. At 4 K, two coherent phonons are observed at similar to 5.3 THz (5.0 THz) and similar to 9.3 THz (9.4 THz) for Dy2Ti2O7 (Gd2Ti2O7), whereas three coherent phonons are generated at similar to 5.0, 8.6, and 9.7 THz for Tb2Ti2O7. In the case of spin-ice Dy2Ti2O7, a clear discontinuity is observed in the linewidths of both the coherent phonons as well as in the phase of lower-energy coherent phonon mode, indicating a subtle structural change at 110 K. Another important observation is a phase difference of pi between the modes in all the samples, thus suggesting that the driving forces behind the generation of these modes could be different in nature, unlike a purely impulsive or displacive mechanism.

Differences in the glass-forming ability of rapidly solidified and mechanically alloyed Ti-Ni-Cu alloys

Melt spinning of Ti50Ni50 ? xCux (x = 10, 25, 40) alloys showed that the glass-forming ability is good for Cu-rich compositions and poor for Ni-rich compositions. The results of mechanical alloying experiments in the same system showed a reverse trend as far as the glass-forming ability is concerned. These contradictory results are explained in the light of thermodynamic and kinetic considerations. Crystallization results of the melt spun alloys are also presented.

Solid state amorphization in binary Ti---Ni, Ti---Cu and ternary Ti---Ni---Cu system by mechanical alloying

An amorphous phase has been synthesized by mechanical alloying in a planetary mill over a nickel content range of 10�70 at.% in the Ti---Ni system and a copper content range of 10�50 at.% in the Ti---Cu system. In the case of ternary Ti---Ni---Cu alloys the glass-forming composition range has been found to be given by x = 10�20 for Ti60Ni40 ? xCux, x = 10 � 30 for Ti50Ni50 ? xCux and x = 10 � 40 for Ti40Ni60 ? xCux alloys. The difficulty in the amorphization of copper-rich compositions is explained in the light of enthalpy composition diagrams calculated for the ternary solid solution and the amorphous phase.

Oriented ferroelectric thin films of PbTiO3, (Pb,La)TiO3, and Pb(Zr,Ti)O3 by nebulized spray pyrolysis

Nebulized spray pyrolysis provides a good low?temperature chemical route for preparing thin films of PbTiO3, (Pb0.9,La0.1)TiO3 and Pb(Zr0.52,Ti0.48)O3. The films are a? or c? axis oriented, with spherical grains of ?30 nm and give satisfactory P?E hysteresis loops. © 1995 American Institute of Physics.

Surface resistance and residual losses of Ag?doped YBa2Cu3O7?? thin films on sapphire

High?quality Ag?doped YBa2Cu3O7?? thin films have been grown by laser ablation on R?plane ?1102? sapphire without any buffer layer. Thin films have been found to be highly c?axis oriented with Tc=90 K, transition width ?T?1 K, and transport Jc=1.2×106 A?cm?2 at 77 K in self?field conditions. The microwave surface resistance of these films measured on patterned microstrip resonators has been found to be 530 ?? at 10 GHz at 77 K which is the lowest reported on unbuffered sapphire. Improved in?plane epitaxy and reduced reaction rate between the substrate and the film caused due to Ag in the film are believed to be responsible for this greatly improved microwave surface resistance. © 1995 American Institute of Physics.