Simulation and geometrical design of multi-section tapered semiconductor optical amplifiers at 1.57 µm

Fully integrated semiconductor master-oscillator power-amplifiers (MOPA) with a tapered power amplifier are attractive sources for applications requiring high brightness. The geometrical design of the tapered amplifier is crucial to achieve the required power and beam quality. In this work we investigate by numerical simulation the role of the geometrical design in the beam quality and in the maximum achievable power. The simulations were performed with a Quasi-3D model which solves the complete steady-state semiconductor and thermal equations combined with a beam propagation method. The results indicate that large devices with wide taper angles produce higher power with better beam quality than smaller area designs, but at expenses of a higher injection current and lower conversion efficiency.

Design and Simulation of Deep Nanometer SRAM Cells under Energy, Mismatch, and Radiation Constraints

La fiabilidad está pasando a ser el principal problema de los circuitos integrados según la tecnología desciende por debajo de los 22nm. Pequeñas imperfecciones en la fabricación de los dispositivos dan lugar ahora a importantes diferencias aleatorias en sus características eléctricas, que han de ser tenidas en cuenta durante la fase de diseño. Los nuevos procesos y materiales requeridos para la fabricación de dispositivos de dimensiones tan reducidas están dando lugar a diferentes efectos que resultan finalmente en un incremento del consumo estático, o una mayor vulnerabilidad frente a radiación. Las memorias SRAM son ya la parte más vulnerable de un sistema electrónico, no solo por representar más de la mitad del área de los SoCs y microprocesadores actuales, sino también porque las variaciones de proceso les afectan de forma crítica, donde el fallo de una única célula afecta a la memoria entera. Esta tesis aborda los diferentes retos que presenta el diseño de memorias SRAM en las tecnologías más pequeñas. En un escenario de aumento de la variabilidad, se consideran problemas como el consumo de energía, el diseño teniendo en cuenta efectos de la tecnología a bajo nivel o el endurecimiento frente a radiación. En primer lugar, dado el aumento de la variabilidad de los dispositivos pertenecientes a los nodos tecnológicos más pequeños, así como a la aparición de nuevas fuentes de variabilidad por la inclusión de nuevos dispositivos y la reducción de sus dimensiones, la precisión del modelado de dicha variabilidad es crucial. Se propone en la tesis extender el método de inyectores, que modela la variabilidad a nivel de circuito, abstrayendo sus causas físicas, añadiendo dos nuevas fuentes para modelar la pendiente sub-umbral y el DIBL, de creciente importancia en la tecnología FinFET. Los dos nuevos inyectores propuestos incrementan la exactitud de figuras de mérito a diferentes niveles de abstracción del diseño electrónico: a nivel de transistor, de puerta y de circuito. El error cuadrático medio al simular métricas de estabilidad y prestaciones de células SRAM se reduce un mínimo de 1,5 veces y hasta un máximo de 7,5 a la vez que la estimación de la probabilidad de fallo se mejora en varios ordenes de magnitud. El diseño para bajo consumo es una de las principales aplicaciones actuales dada la creciente importancia de los dispositivos móviles dependientes de baterías. Es igualmente necesario debido a las importantes densidades de potencia en los sistemas actuales, con el fin de reducir su disipación térmica y sus consecuencias en cuanto al envejecimiento. El método tradicional de reducir la tensión de alimentación para reducir el consumo es problemático en el caso de las memorias SRAM dado el creciente impacto de la variabilidad a bajas tensiones. Se propone el diseño de una célula que usa valores negativos en la bit-line para reducir los fallos de escritura según se reduce la tensión de alimentación principal. A pesar de usar una segunda fuente de alimentación para la tensión negativa en la bit-line, el diseño propuesto consigue reducir el consumo hasta en un 20 % comparado con una célula convencional. Una nueva métrica, el hold trip point se ha propuesto para prevenir nuevos tipos de fallo debidos al uso de tensiones negativas, así como un método alternativo para estimar la velocidad de lectura, reduciendo el número de simulaciones necesarias. Según continúa la reducción del tamaño de los dispositivos electrónicos, se incluyen nuevos mecanismos que permiten facilitar el proceso de fabricación, o alcanzar las prestaciones requeridas para cada nueva generación tecnológica. Se puede citar como ejemplo el estrés compresivo o extensivo aplicado a los fins en tecnologías FinFET, que altera la movilidad de los transistores fabricados a partir de dichos fins. Los efectos de estos mecanismos dependen mucho del layout, la posición de unos transistores afecta a los transistores colindantes y pudiendo ser el efecto diferente en diferentes tipos de transistores. Se propone el uso de una célula SRAM complementaria que utiliza dispositivos pMOS en los transistores de paso, así reduciendo la longitud de los fins de los transistores nMOS y alargando los de los pMOS, extendiéndolos a las células vecinas y hasta los límites de la matriz de células. Considerando los efectos del STI y estresores de SiGe, el diseño propuesto mejora los dos tipos de transistores, mejorando las prestaciones de la célula SRAM complementaria en más de un 10% para una misma probabilidad de fallo y un mismo consumo estático, sin que se requiera aumentar el área. Finalmente, la radiación ha sido un problema recurrente en la electrónica para aplicaciones espaciales, pero la reducción de las corrientes y tensiones de los dispositivos actuales los está volviendo vulnerables al ruido generado por radiación, incluso a nivel de suelo. Pese a que tecnologías como SOI o FinFET reducen la cantidad de energía colectada por el circuito durante el impacto de una partícula, las importantes variaciones de proceso en los nodos más pequeños va a afectar su inmunidad frente a la radiación. Se demuestra que los errores inducidos por radiación pueden aumentar hasta en un 40 % en el nodo de 7nm cuando se consideran las variaciones de proceso, comparado con el caso nominal. Este incremento es de una magnitud mayor que la mejora obtenida mediante el diseño de células de memoria específicamente endurecidas frente a radiación, sugiriendo que la reducción de la variabilidad representaría una mayor mejora. ABSTRACT Reliability is becoming the main concern on integrated circuit as the technology goes beyond 22nm. Small imperfections in the device manufacturing result now in important random differences of the devices at electrical level which must be dealt with during the design. New processes and materials, required to allow the fabrication of the extremely short devices, are making new effects appear resulting ultimately on increased static power consumption, or higher vulnerability to radiation SRAMs have become the most vulnerable part of electronic systems, not only they account for more than half of the chip area of nowadays SoCs and microprocessors, but they are critical as soon as different variation sources are regarded, with failures in a single cell making the whole memory fail. This thesis addresses the different challenges that SRAM design has in the smallest technologies. In a common scenario of increasing variability, issues like energy consumption, design aware of the technology and radiation hardening are considered. First, given the increasing magnitude of device variability in the smallest nodes, as well as new sources of variability appearing as a consequence of new devices and shortened lengths, an accurate modeling of the variability is crucial. We propose to extend the injectors method that models variability at circuit level, abstracting its physical sources, to better model sub-threshold slope and drain induced barrier lowering that are gaining importance in FinFET technology. The two new proposed injectors bring an increased accuracy of figures of merit at different abstraction levels of electronic design, at transistor, gate and circuit levels. The mean square error estimating performance and stability metrics of SRAM cells is reduced by at least 1.5 and up to 7.5 while the yield estimation is improved by orders of magnitude. Low power design is a major constraint given the high-growing market of mobile devices that run on battery. It is also relevant because of the increased power densities of nowadays systems, in order to reduce the thermal dissipation and its impact on aging. The traditional approach of reducing the voltage to lower the energy consumption if challenging in the case of SRAMs given the increased impact of process variations at low voltage supplies. We propose a cell design that makes use of negative bit-line write-assist to overcome write failures as the main supply voltage is lowered. Despite using a second power source for the negative bit-line, the design achieves an energy reduction up to 20% compared to a conventional cell. A new metric, the hold trip point has been introduced to deal with new sources of failures to cells using a negative bit-line voltage, as well as an alternative method to estimate cell speed, requiring less simulations. With the continuous reduction of device sizes, new mechanisms need to be included to ease the fabrication process and to meet the performance targets of the successive nodes. As example we can consider the compressive or tensile strains included in FinFET technology, that alter the mobility of the transistors made out of the concerned fins. The effects of these mechanisms are very dependent on the layout, with transistor being affected by their neighbors, and different types of transistors being affected in a different way. We propose to use complementary SRAM cells with pMOS pass-gates in order to reduce the fin length of nMOS devices and achieve long uncut fins for the pMOS devices when the cell is included in its corresponding array. Once Shallow Trench isolation and SiGe stressors are considered the proposed design improves both kinds of transistor, boosting the performance of complementary SRAM cells by more than 10% for a same failure probability and static power consumption, with no area overhead. While radiation has been a traditional concern in space electronics, the small currents and voltages used in the latest nodes are making them more vulnerable to radiation-induced transient noise, even at ground level. Even if SOI or FinFET technologies reduce the amount of energy transferred from the striking particle to the circuit, the important process variation that the smallest nodes will present will affect their radiation hardening capabilities. We demonstrate that process variations can increase the radiation-induced error rate by up to 40% in the 7nm node compared to the nominal case. This increase is higher than the improvement achieved by radiation-hardened cells suggesting that the reduction of process variations would bring a higher improvement.

Thermal characterization of urban heat island (UHI) according to urban morphology of Madrid

Present research is framed within the project MODIFICA (MODelo predictivo - edIFIcios - Isla de Calor Urbana) aimed at developing a predictive model for dwelling energy performance under the urban heat island effect in order to implement it in the evaluation of real energy demand and consumption of dwellings as well as in the selection of energy retrofitting strategies. It is funded by Programa de I+D+i orientada a los retos de la sociedad 'Retos Investigación' 2013. The scope of our predictive model is defined by the heat island effect (UHI) of urban structures that compose the city of Madrid. In particular, we focus on the homogeneous areas for urban structures with the same urban and building characteristics. Data sources for the definition of such homogeneous areas were provided by previous research on the UHI of Madrid. The objective is to establish a critical analysis of climate records used for energy simulation tools, which data come from weather stations placed in decontextualized areas from the usual urban reality, where the thermal conditions differs by up to 6ºC. In this way, we intend to develop a new predictive model for the consumption and demand in buildings depending on their location, the urban structure and the associated UHI, improving the future energy rehabilitation interventions

Urban microclimate and thermal comfort modelling: strategies for urban renovation

The urban microclimate plays an important role in building energy consumption and thermal comfort in outdoor spaces. Nowadays, cities need to increase energy efficiency, reduce pollutant emissions and mitigate the evident lack of sustainability. In light of this, attention has focused on the bioclimatic concepts use in the urban development. However, the speculative unsustainability of the growth model highlights the need to redirect the construction sector towards urban renovation using a bioclimatic approach. The public space plays a key role in improving the quality of today’s cities, especially in terms of providing places for citizens to meet and socialize in adequate thermal conditions. Thermal comfort affects perception of the environment, so microclimate conditions can be decisive for the success or failure of outdoor urban spaces and the activities held in them. For these reasons, the main focus of this work is on the definition of bioclimatic strategies for existing urban spaces, based on morpho-typological components, urban microclimate conditions and comfort requirements for all kinds of citizens. Two case studies were selected in Madrid, in a social housing neighbourhood constructed in the 1970s based on Rational Architecture style. Several renovation scenarios were performed using a computer simulation process based in ENVI-met and diverse microclimate conditions were compared. In addition, thermal comfort evaluation was carried out using the Universal Thermal Climate Index (UTCI) in order to investigate the relationship between microclimate conditions and thermal comfort perception. This paper introduces the microclimate computer simulation process as a valuable support for decision-making for neighbourhood renovation projects in order to provide new and better solutions according to the thermal quality of public spaces and reducing energy consumption by creating and selecting better microclimate areas.

Kinetic study of the decompositions involved in the thermal degradation of commercial azodicarbonamide

The transitions and reactions involved in the thermal treatment of several commercial azodicarbonamides (ADC) in an inert atmosphere have been studied by dynamic thermogravimetry analysis (TGA), mass spectrometry and Fourier transform infrared (FTIR) spectroscopy. A pseudo-mechanistic model, involving several competitive and non-competitive reactions, has been suggested and applied to the correlation of the weight loss data. The model applied is capable of accurately representing the different processes involved, and can be of great interest in the understanding and quantification of such phenomena, including the simulation of the instantaneous amount of gases evolved in a foaming process. In addition, a brief discussion on the methodology related to the mathematical modeling of TGA data is presented, taking into account the complex thermal behaviour of the ADC.

Some examples of modeling in chemical engineering: thermal treatment of polymers, phase equilibrium calculations and process design

Presentation submitted to PSE Seminar, Chemical Engineering Department, Center for Advanced Process Design-making (CAPD), Carnegie Mellon University, Pittsburgh (USA), October 2012.

Corn stover thermal decomposition in pyrolytic and oxidant atmosphere

The pyrolysis and combustion of corn stover were studied by dynamic thermogravimetry and derivate thermogravimetry (TG-DTG) at heating rates of 5, 10, 20 and 50 K min−1 at atmospheric pressure. For the simulation of pyrolysis and combustion processes a kinetic model based on the distribution of activation energies was used, with three pools of reactants (three pseudocomponents) because of the complexity of the biomass samples of agricultural origin. The experimental thermogravimetric data of pyrolysis and combustion processes were simultaneously fitted to determine a single set of kinetic parameters able to describe both processes at the different heating rates. The model proposed achieves a good correlation between the experimental and calculated curves, with an error of less than 4% for fitting four heating rates simultaneously. The experimental results and kinetic parameters may provide useful data for the design of thermo decomposition processing system using corn stover as feedstock. On the other hand, analysis of the main compounds in the evolved gas is given by means of a microcromatograph.

Modeling and validation of the thermal behavior of buildings for the development of demand response methods

The representation of the thermal behaviour of the building is achieved through a relatively simple dynamic model that takes into account the effects due to the thermal mass of the building components. The model of a intra-floor apartment has been built in the Matlab-Simulink environment and considers the heat transmission through the external envelope, wall and windows, the internal thermal masses, (i.e. furniture, internal wall and floor slabs) and the sun gain due to opaque and see-through surfaces of the external envelope. The simulations results for the entire year have been compared and the model validated, with the one obtained with the dynamic building simulation software Energyplus.

Simulation and public communication of ocean response to changing sea ice concentration

Senior thesis written for Oceanography 445

Effects of potential models on the adsorption of ethane and ethylene on graphitized thermal carbon black. Study of two-dimensional critical temperature and isosteric heat versus loading

Adsorption of ethylene and ethane on graphitized thermal carbon black and in slit pores whose walls are composed of graphene layers is studied in detail to investigate the packing efficiency, the two-dimensional critical temperature, and the variation of the isosteric heat of adsorption with loading and temperature. Here we used a Monte Carlo simulation method with a grand canonical Monte Carlo ensemble. A number of two-center Lennard-Jones (LJ) potential models are investigated to study the impact of the choice of potential models in the description of adsorption behavior. We chose two 2C-LJ potential models in our investigation of the (i) UA-TraPPE-LJ model of Martin and Siepmann (J. Phys. Chem. B 1998,102, 25692577) for ethane and Wick et al. (J. Phys. Chem. B 2000,104, 8008-8016) for ethylene and (ii) AUA4-LJ model of Ungerer et al. (J. Chem. Phys. 2000,112, 5499-5510) for ethane and Bourasseau et al. (J. Chem. Phys. 2003, 118, 3020-3034) for ethylene. These models are used to study the adsorption of ethane and ethylene on graphitized thermal carbon black. It is found that the solid-fluid binary interaction parameter is a function of adsorbate and temperature, and the adsorption isotherms and heat of adsorption are well described by both the UA-TraPPE and AUA models, although the UA-TraPPE model performs slightly better. However, the local distributions predicted by these two models are slightly different. These two models are used to explore the two-dimensional condensation for the graphitized thermal carbon black, and these values are 110 K for ethylene and 120 K for ethane.

Effects of potential models in the vapor-liquid equilibria and adsorption of simple gases on graphitized thermal carbon black

In this paper, we investigate the effects of various potential models in the description of vapor–liquid equilibria (VLE) and adsorption of simple gases on highly graphitized thermal carbon black. It is found that some potential models proposed in the literature are not suitable for the description of VLE (saturated gas and liquid densities and the vapor pressure with temperature). Simple gases, such as neon, argon, krypton, xenon, nitrogen, and methane are studied in this paper. To describe the isotherms on graphitized thermal carbon black correctly, the surface mediation damping factor introduced in our recent publication should be used to calculate correctly the fluid–fluid interaction energy between particles close to the surface. It is found that the damping constant for the noble gases family is linearly dependent on the polarizability, suggesting that the electric field of the graphite surface has a direct induction effect on the induced dipole of these molecules. As a result of this polarization by the graphite surface, the fluid–fluid interaction energy is reduced whenever two particles are near the surface. In the case of methane, we found that the damping constant is less than that of a noble gas having the similar polarizability, while in the case of nitrogen the damping factor is much greater and this could most likely be due to the quadrupolar nature of nitrogen.

Adsorption of quadrupolar, diatomic nitrogen onto graphitized thermal carbon black and in slit-shaped carbon pores. Effects of surface mediation

In this paper, we study the effect of solid surface mediation on the intermolecular potential energy of nitrogen, and its impact on the adsorption of nitrogen on a graphitized carbon black surface and in carbon slit-shaped pores. This effect arises from the lower effective interaction potential energy between two particles close to the surface compared to the potential energy of the same two particles when they are far away from the surface. A simple equation is proposed to calculate the reduction factor and this is used in the Grand Canonical Monte Carlo (GCMC) simulation of nitrogen adsorption on graphitized thermal carbon black. With this modification, the GCMC simulation results agree extremely well with the experimental data over a wide range of pressure; the simulation results with the original potential energy (i.e. no surface mediation) give rise to a shoulder in the neighbourhood of monolayer coverage and a significant over-prediction of the second and higher layer coverages. The influence of this surface mediation on the dependence of the pore-filling pressure on the pore width is also studied. It is shown that such surface mediation has a significant effect on the pore-filling pressure. This implies that the use of the local isotherms obtained from the potential model without surface mediation could give rise to a serious error in the determination of the pore-size distribution.

Effects of surface heterogeneity on the adsorption of nitrogen on graphitized thermal carbon black

In this paper, we study the surface heterogeneity and the surface mediation on the intermolecular potential energy for nitrogen adsorption on graphitized thermal carbon black (GTCB). The surface heterogeneity is modeled as the random distribution of effective carbonyl functional groups on the graphite surface. The molecular parameters and the discrete charges of this carbonyl group are taken from Jorgensen, et al. (J. Am. Chem. Soc., (1984) 106, 6638) while those for nitrogen (dispersive parameters and discrete charges) are taken from Murthy et al. (Mol. Phys., (1983) 50, 531) in our Grand Canonical Monte Carlo (GCMC) simulation. The solid surface mediation in the reduction of intermolecular potential energy between two fluid molecules was taken from a recent work by Do et al. (Langmuir, (2004) 20, 7623). Our simulation results accounting for the surface heterogeneity and surface mediation on intermolecular potential energy were compared with the experimental data of nitrogen at 77 and 90 K. The solid-fluid dispersive parameters are determined from the Lorentz-Berthelot (LB) rule. The fraction of the graphite surface covered with carbonyl functional groups was then derived from the consideration of the Henry constant, and for the data of Kruk et al. (Langmuir, (1999) 15, 1435) we have found that 1% of their GTCB surface is covered with effective carbonyl functional groups. The damping constant, due to surface mediation, was determined from the consideration of the portion of the adsorption isotherm where the first layer is being completed, and it was found to take a value of 0.0075. With these parameters, we have found that the GCMC simulation results describe the data over the complete range of pressure substantially better than any other MC models in the literature. The implication of this work is demonstrated with local adsorption isotherms of 10 and 20 A slit pores. One was obtained without allowance for surface mediation, while the other correctly accounts for these factors. The two local isotherms differ substantially, and the implication is that if we used incorrect local isotherms (i.e. without the surface mediation) the pore size distribution would be incorrectly derived.

Adsorption of argon on homogeneous graphitized thermal carbon black and heterogeneous carbon surface

In this paper we investigate the effects of surface mediation on the adsorption behavior of argon at different temperatures on homogeneous graphitized thermal carbon black and on heterogeneous nongraphitized carbon black surface. The grand canonical Monte Carlo (GCMC) simulation is used to study the adsorption, and its performance is tested against a number of experimental data on graphitized thermal carbon black (which is known to be highly homogeneous) that are available in the literature. The surface-mediation effect is shown to be essential in the correct description of the adsorption isotherm because without accounting for that effect the GCMC simulation results are always greater than the experimental data in the region where the monolayer is being completed. This is due to the overestimation of the fluid–fluid interaction between particles in the first layer close to the solid surface. It is the surface mediation that reduces this fluid–fluid interaction in the adsorbed layers, and therefore the GCMC simulation results accounting for this surface mediation that are presented in this paper result in a better description of the data. This surface mediation having been determined, the surface excess of argon on heterogeneous carbon surfaces having solid–fluid interaction energies different from the graphite can be readily obtained. Since the real heterogeneous carbon surface is not the same as the homogeneous graphite surface, it can be described by an area distribution in terms of the well depth of the solid–fluid energy. Assuming a patchwise topology of the surface with patches of uniform well depth of solid–fluid interaction, the adsorption on a real carbon surface can be determined as an integral of the local surface excess of each patch with respect to the differential area. When this is matched against the experimental data of a carbon surface, we can derive the area distribution versus energy and hence the geometrical surface area. This new approach will be illustrated with the adsorption of argon on a nongraphitized carbon at 87.3 and 77 K, and it is found that the GCMC surface area is different from the BET surface area by about 7%. Furthermore, the description of the isotherm in the region of BET validity of 0.06 to 0.2 is much better with our method than with the BET equation.

Modeling of adsorption on nongraphitized carbon surface: GCMC simulation studies and comparison with experimental data

We model nongraphitized carbon black surfaces and investigate adsorption of argon on these surfaces by using the grand canonical Monte Carlo simulation. In this model, the nongraphitized surface is modeled as a stack of graphene layers with some carbon atoms of the top graphene layer being randomly removed. The percentage of the surface carbon atoms being removed and the effective size of the defect ( created by the removal) are the key parameters to characterize the nongraphitized surface. The patterns of adsorption isotherm and isosteric heat are particularly studied, as a function of these surface parameters as well as pressure and temperature. It is shown that the adsorption isotherm shows a steplike behavior on a perfect graphite surface and becomes smoother on nongraphitized surfaces. Regarding the isosteric heat versus loading, we observe for the case of graphitized thermal carbon black the increase of heat in the submonolayer coverage and then a sharp decline in the heat when the second layer is starting to form, beyond which it increases slightly. On the other hand, the isosteric heat versus loading for a highly nongraphitized surface shows a general decline with respect to loading, which is due to the energetic heterogeneity of the surface. It is only when the fluid-fluid interaction is greater than the surface energetic factor that we see a minimum-maximum in the isosteric heat versus loading. These simulation results of isosteric heat agree well with the experimental results of graphitization of Spheron 6 (Polley, M. H.; Schaeffer, W. D.; Smith, W. R. J. Phys. Chem. 1953, 57, 469; Beebe, R. A.; Young, D. M. J. Phys. Chem. 1954, 58, 93). Adsorption isotherms and isosteric heat in pores whose walls have defects are also studied from the simulation, and the pattern of isotherm and isosteric heat could be used to identify the fingerprint of the surface.