DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS

Current based microscopic defect analysis methods such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) have been further developed in accordance with the need for the defect analysis of highly irradiated (Phi(n) > 10(13) n/cm(2)) high resistivity silicon detectors. The new I-DLTS/TSC system has a temperature range of 8 K less than or equal to T less than or equal to 450 K and a high sensitivity that can detect a defect concentration of less than 10(10)/cm(3) (background noise as low as 10 fA). A new filling method using different wavelength laser illumination has been applied, which is more efficient and suitable than the traditional voltage pulse filling. It has been found that the filling of a defect level depends on such factors as the total concentration of free carriers generated or injected, the penetration length of the laser (laser wavelength), the temperature at which the filling is taking place, as well as the decay time after the filling (but before the measurement). The mechanism of the defect filling can be explained by the competition between trapping and detrapping of defect levels, possible capture cross section temperature dependence, and interaction among various defect levels in terms of charge transferring. Optimum defect filling conditions have been suggested for highly irradiated high resistivity silicon detectors.

LUMINESCENCE-CENTERS IN POROUS SILICON

Photoluminescence studies on porous silicon show that there are luminescence centers present in the surface states. By taking photoluminescence spectra of porous silicon with respect to temperature, a distinct peak can be observed in the temperature range 100-150 K. Both linear and nonlinear relationships were observed between excitation laser power and the photoluminescence intensity within this temperature range. In addition, there was a tendency for the photoluminescence peak to red shift at low temperature as well as at low excitation power. This is interpreted as indicating that the lower energy transition becomes dominant at low temperature and excitation power. The presence of these luminescence centers can be explained in terms of porous silicon as a mixture of silicon clusters and wires in which quantum confinement along with surface passivation would cause a mixing of Gamma and X band structure between the surface states and the bulk. This mixing would allow the formation of luminescence centers.

Thermodynamic investigation on properties of gasohol

The heat capacities (C-p) of three types of gasohol (which consisted of 20 wt % ethanol and 80 wt % unleaded gasoline 93(#) (system S1), 30 wt % ethanol and 70 wt % unleaded gasoline 931 (system S2), 40 wt % ethanol and 60 wt % unleaded gasoline 930 (system S3), where "93(#)" denotes the octane number) were measured by adiabatic calorimetry in the temperature range of 80320 K. A glass transition was observed at 94.24, 95.15, and 95.44 K for system S1, S2, and S3, respectively. A solid-solid phase transition and solid-liquid phase transition were observed at 135.18 and 151.30 K for system S1, 131.82 and 152.10 K for system S2, and 121.29 and 155.09 K for S3, respectively. The polynomial equations for C, with respect to the thermodynamic temperature (T), and with respect to the content of ethanol (x), were established through the least-squares fitting. The thermodynamic functions and the excess thermodynamic functions of the three samples were derived using these thermodynamic relationships and equations.

Synthesis, characterization, crystal structure and magnetic property of asymmetrical double Schiff base heterotrinuclear complex: Cu(II)-Co(II)-Cu(II)

An asymmetrical double Schiff-base Cu(II) mononuclear complex, HCuLp (H(3)Lp is N-3-carboxylsalicylidene-N'-5-chlorosalicylaldehyde-1,3-diaminopropane) and a heterometal trinuclear complex with double molecular structure (CuLp)(2)Co center dot 5H(2)O have been synthesized and characterized by means of elemental analyses, IR and electronic spectra. The crystal structure of the heterotrinucler complex was determined by X-ray analysis. Each asymmetric unit within the unit cell of the complex contains two heterotrinuclear neutral molecules (a) [CuLpCoCuLp], (b) [(CuLpH(2)O) CoCuLp] and four uncoordinated water molecules. In the two neutral molecules, the central Co2+ ions are located at the site of O-6 with a distorted octahedral geometry, one terminal Cu2+ ion (Cu(3)) at the square-pyramidal environment of N2O3, and the other three at the square planar coordination geometry with N2O2 donor atoms. Magnetic properties of the heterotrinucler complex have been determined in the temperature range 5-300 K, indicating that the interaction between the central Co2+ ion and the outer Co2+ ions is antiferromagnetic.

The electrical and magnetic properties of lanthanide alkaline-earth transition-metal oxides

Five Ln(2)SrMCuO(6.5) oxides (M = Co, Ln = Y and Ho; M = Fe, Ln = Y, Ho, and Dy) were synthesized, and their crystal structures, IR spectra, and physical properties were studied. They have almost the same structure and crystallize in orthorhombic systems. Below room temperature, Y2SrFeCuO6.5, a known layered oxide, shows antiferromagnetic behavior, but the four new oxides are paramagnetic. Y2SrFeCuO6.5 fits the Curie-Weiss law in the temperature range 300-100 K, but Y2SrCoCuO6.5 shows complex magnetic behavior because of the disproportion of some Co+3 to Co+2 and Co+4 The five oxides are all p-type semiconductors in the measured temperature range and have large electrical resistivities at room temperature.

THE EFFECT ON PHYSICAL-PROPERTIES OF THE SUBSTITUTION OF CA OR BA FOR SR IN NDSRNIO4

A new solid solution series, NdSr(1-x)M(x)NiO(4) (M = Ca: 0.0 less than or equal to x less than or equal to 1.0; M = Ba: 0.0 less than or equal to x less than or equal to 0.6), was synthesized by solid state reaction, and the structures, magnetic and electrical properties and optical spectra of this series have been studied. All the samples crystalized in tetragonal systems, with the exception of NdCaNiO4, which crystallized in the orthohombic system. IR spectra of NdSr1-xCaxNiO4 indicated that the lengths of two Ni-O bonds decrease with increasing Ca content. The electrical conduction changed from metallic-type to semiconductive-type when x greater than or equal to 0.4 (M = Ca, Ba), and the room temperature resistivities of NdSr1-xCaxNiO4 increased with the increase of Ca content. Magnetic susceptibility measurements revealed that Ni+3 ions in all the samplies were in low-spin state over the temperature range 77-300 K.

STUDIES ON THE SYNTHETIC, STRUCTURAL, ELECTRICAL, AND MAGNETIC-PROPERTIES OF THE NEW LAYERED OXIDES LN(2)MCO(2)O(7) (LN=SM, GD, M=SR, BA)

Three new oxides Ln(2)MCo(2)O(7) (Ln = Sm, Gd; M = Sr, Ba) have been synthesized in solid state reaction method. The powder X-ray diffraction spectra show that they are all isostructural with Sr3Ti2O7. The electrical resistivities in the temperature range 300-1100 K show that they are all semiconductors, and a transition to metals is observed at 1053, 1053, and 573 K for Sm2SrCo2O7, Gd2SrCo2O7, and Sm2BaCo2O7, respectively. The magnetic suspectivities of Gd2SrCo2O7 in the temperature range 300-673 K fit the Curie-Weiss law well. A plateau is observed in the curves of Sm(2)MCo(2)O(7) (M = Sr, Ba) which is attributed to the configuration state change of Co(III) from low spin to high spin. (C) 1995 Academic Press, Inc.

SPIN AND VALENCE STATE EQUILIBRIA OF COBALT AND MAGNETIC-PROPERTIES OF LACOO3

On the basis of the spin and valence state equilibria and superexchange interaction of the various cobalt ions in LaCoO3, an approximate semiempirical formula has been proposed and used to calculate magnetic susceptibilities of LaCoO3 over a wide temperature range (100-1200 K). The results indicate that there are thermodynamic equilibria between the low spin state Co(III) (t2g6e(g)0) ion, the high spin state Co3+ (t2g4e(g)2) ion, the Co(II) (t2g6e(g)1) ion and the Co(IV) (t2g5e(g)0) ion in LaCoO3. The energy difference between the low spin state Co(III) and the high spin state Co3+ is about 0.006 eV. The content of the low spin state Co(III) ion is predominant in LaCoO3 and the content of the high spin state Co3+ ion varies with temperature, reaching a maximum at about 350 K, then decreasing gradually with increasing temperature. At low temperature the contents of the Co(II) ion and the Co(IV) ion in LaCoO3 are negligible, while above 200 K the contents of both the Co(II) ion and the Co(IV) ion increase with increasing temperature; however, the content of the Co(II) ion always is larger than that of the Co(IV) ion at any temperature. These calculated results are in good agreement with experimental results of the Mossbauer effect, magnetic susceptibility and electrical conductivity of LaCoO3.

MAGNETIC-PROPERTIES OF LANTHANUM MANGANITE AND VALENCE EQUILIBRIA OF MANGANESE

The paramagnetic susceptibility of lanthanum manganite has been measured over a wide temperature range (100-1073 K). On the basis of the thermodynamic equilibria between the various manganese ions with different valence and spin states and the magnetic interactions between the various manganese ions, a semiempirical formula has been proposed to calculate the paramagnetic susceptibilities of lanthanum manganite at different temperatures. The results indicate that most of the discrepancies between the calculated and experimental reciprocal susceptibilities of lanthanum manganite are less than 10% and that the relative contents of the various manganese ions in lanthanum manganite vary with temperature. The relative content of the trivalent manganese ion with a high spin state is dominant over the whole temperature range, while be relative content of the tetravalent manganese ion with a high spin state decreases monotonously with increasing temperature. At 300 K the calculated relative content of the tetravalent manganese ion in lanthanum manganite is about 34%, which is in good agreement with the experimental result (30%). There are some divalent manganese ions present in lanthanum manganite from low temperature to high temperature. The ratio of the relative contents of the tetravalent and divalent manganese ions in the compound varies with temperature. Above 750 K the relative content of the tetravalent manganese ion is less than that of the divalent manganese ion. The variation in the electrical resistivity of lanthanum manganite with temperature has also been interpreted reasonably.

Heat capacity enhancement and thermodynamic properties of nanostructured amorphous SiO2

The heat capacity of nanostructured amorphous SiO2 (na-SiO2) has been measured by adiabatic calorimetric method over the temperature range 9-354 K. TG and differential scanning calorimeter (DSC) were also employed to determine the thermal stability. Glass transition temperature (T-g) for the two same grain sizes with different specific surface of naSiO(2) samples and one coarse-grained amorphous SiO2 (ca-SiO2) sample were determined to be 1377, 1397 and 1320 K, respectively. The low temperature experimental results show that there are significant heat capacity (C-P) enhancements among na-SiO2 samples and ca-SiO2. Entropy, enthalpy, Gibbs free energy and Debye temperature (theta (D)) were obtained based on the low temperature heat capacity measurement of na-SiO2. The Cp enhancements of na-SiO2 were discussed in terms of configurational and vibrational entropy. (C) 2001 Elsevier Science B.V. All rights reserved.

Molecular dynamics-based approach to study the anisotropic self-diffusion of molecules in porous materials with multiple cage types: Application to H-2 in losod

Van den Berg, A. W. C., Flikkema, E., Lems, S., Bromley, S. T., Jansen, J. C. (2006). Molecular dynamics-based approach to study the anisotropic self-diffusion of molecules in porous materials with multiple cage types: Application to H-2 in losod. Journal of physical chemistry b, 110 (1), 501-506. RAE2008

Energy levels, radiative rates, and excitation rates for transitions in OIV

Aims. In this paper we report calculations for energy levels, radiative rates, and excitation rates for transitions in O IV. Methods. The grasp (general-purpose relativistic atomic structure package) and FAC (flexible atomic code) were adopted for calculating energy levels and radiative rates, and the Dirac atomic R-matrix code (DARC) used to determine the excitation rates. Results. Oscillator strengths and radiative rates are reported for all E1, E2, M1, and M2 transitions among the lowest 75 levels of O IV. Additionally, lifetimes are reported for all levels and comparisons made with those available in the literature. Finally, effective collision strengths are reported for all transitions over a wide temperature range below 106 K. Comparisons are made with earlier results and the accuracy of the data is assessed.

Effective collision strengths for transitions in Ni XIX

Aims. In this paper we report electron impact collision strengths and excitation rates for transitions among the lowest 89 levels of Ni XIX.
Methods. The Dirac atomic R-matrix code (DARC) is adopted for the calculations of collision strengths and subsequently the effective collision strengths.
Results. Collision strengths for resonance transitions among 89 levels arising from the (1s2) 2s22p6, 2s22p53$\ell$, 2s2p63$\ell$, 2s22p54$\ell$, and 2s2p64$\ell$ configurations of Ni XIX are reported over a wide energy range below 250 Ryd. Additionally, effective collision strengths for all 3916 transitions among the 89 levels are listed over a wide temperature range below 107 K. Comparisons are made among different calculations and the accuracy of the data is assessed. Finally, comparisons between theoretical and experimental intensity ratios of some prominent lines of Ni XIX are discussed.

Low-energy electron attachment to chloroform (CHCl3) molecules: A joint experimental and theoretical study

Results from a joint experimental and theoretical study of electron attachment to chloroform (CHCl3) molecules in the gas phase are reported. In an electron swarm study involving a pulsed Townsend technique with equal gas and electron temperatures, accurate attachment rate coefficients were determined over the temperature range 295-373 K; they show an Arrhenius-type rise with increasing temperature, corresponding to an activation energy of 0.11 (1) eV. In a high resolution electron beam experiment involving two versions of the laser photoelectron attachment method, the relative cross section for Cl- formation from CHCl3 over the energy range 0.001-1.25 eV at the gas temperature T-G = 300 K was measured. It exhibits clear downward cusp structure at the threshold for excitation of one quantum of the vibrational symmetric deformation mode nu(3), indicating that this mode is active in the primary attachment process. With reference to our thermal attachment rate coefficient k(T = 300 K) = 3.9(2) x 10(-9) cm(3) s(-1), a new highly resolved absolute attachment cross section for T-G = 300 K was determined. This cross section is extended to higher energies by measurements, carried out with a pulsed electron beam apparatus which also provided new data for the distinctly weaker fragment anions HCl2- and CCl2-. The resulting total absolute cross section for anion formation is used to calculate the dependence of the attachment rate coefficient k(T-e;T-G) on electron temperature T-e over the range 50-15000 K at the fixed gas temperature T-G = 300 K. In addition, we report the dependence of the relative cross section for Cl- formation on gas temperature T-G = 310-435 K). For comparison with the experimental data, R-matrix calculations have been carried out for the dominant anion channel Cl-. The results recover the main experimental observations and predict the dependence of the DEA cross section on the initial vibrational level nu(3) and on the vibrational temperature. Our results are compared with those of previous electron beam and electron swarm experiments.

Barrier height variations and interface properties of PtSi/Si structures

To study some of the interfacial properties of PtSi/Si diodes, Schottky structures were fabricated on (100) crystalline silicon substrates by conventional thermal evaporation of Pt on Si followed by annealing at different temperatures (from 400 degrees C to 700 degrees C) to form PtSi. The PtSi/n-Si diodes, all yielded Schottky barrier (SB) heights that are remarkably temperature dependent. The temperature range (20-290 K) over which the I-V characteristics were measured in the present study is broader with a much lower limit (20 K), than what is usually reported in literature. These variations in the barrier height are adequately interpreted by introducing spatial inhomogeneity into the barrier potential with a Gaussian distribution having a mean barrier of 0.76 eV and a standard deviation of 30 meV. Multi-frequency capacitance-voltage measurements suggest that the barrier is primarily controlled by the properties of the silicide-silicon interface. The forward C-V characteristics, in particular, show small peaks at low frequencies that can be ascribed to interface states rather than to a series resistance effect.