Vidros recobertos com camadas delgadas transparentes de SnO2

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Analysis of Er3+ incorporation in SnO2 by optical investigation

Er3+ emission in the wide bandgap matrix SnO2 is observed either through a direct Er ion excitation process as well as by an indirect process, through energy transfer in samples codoped with Yb3+ ions. Electron-hole generation in the tin dioxide matrix is also used to promote rare-earth ion excitation. Photoluminescence spectra as function of temperature indicate a slight decrease in the emission intensity with temperature increase, yielding low activation energy, about 3.8meV, since the emission even at room temperature is rather considerable.

Desenvolvimento de sensores para gás à base de SnO2 nanoestruturado: influência da microestrutura no desempenho do sensor

Pós nanométricos SnO2.Nb2O5 foram estudados para o desenvolvimento de sensores de etanol. Estes pós foram preparados pelo método Pechini, caracterizados quanto à sua morfologia por difração de raios X, determinação de área superficial específica por BET e Microscopia Eletrônica de Transmissão e foram submetidos a testes de sensibilidade ao vapor de etanol. Foi estabelecida uma correlação entre a microestrutura do material, os efeitos do dopante e a resposta do sensor.

Sintering of tin oxide and its applications in electronics and processing of high purity optical glasses

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Sinterização e caracterização de segunda fase em sistemas SnO2-ZnO

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Visible emission from Er-doped SnO2 thin films deposited by sol-gel

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Determinação de diagramas de bandas de energia e da borda de absorção em SnO2, depositado via sol-gel, sobre quartzo

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Resistividade do filme depositado via sol-gel e estado de oxidação do dopante Ce na matriz SnO2

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electrical and microstructural properties of microwave sintered SnO2-based varistors

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Grain size effect on the electrical response of SnO2 thin and thick film gas sensors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Synthesis of SnO2 nanoparticles and their use in the fabrication of varistors

SnO2 nanoparticles doped with TiO2, CoO, Nb2O3 and Al2O3 were obtained in this work using the methods of coprecipitation and polymeric precursor. X Ray Diffraction (XRD), and Scanning Electron Microscopy (SEM) were used to characterize the ceramic powders obtained. Their synterization capacity was determined by dilatometric studies. Sinterized samples of the system on study were also characterized electrically and microstructurally to determine their suitability as varistors.

Electrochemical stability of SnO2-based coated Ti electrodes

The electrochemical behavior of SnO2-SbOx, based electrodes, with and without the addition of RuO2, was studied by cyclic voltammetry, service life measurements and electrochemical impedance spectroscopy in 0.5 M H2SO4 the physical characteristics of these materials were investigated using SEM, EDX and XRD. The resulting cyclic voltammograms obtained using SnO2-SbOx, and SnO2-SbOx-RuO2(x), x = 30, 5, 1 and 0.4 % showed that the OER overpotential decreased with the addition of RuO2. In the repetitive triangular potential voltammetry applied to the SnO2 electrode without and with RuO2 (1%), a higher anodic current is observed during the first potential scan; it is explained in terms of the oxidation of the Ti substrate. The addition of 1% RuO2 increased the service life from 8 to 20 hours at 10 mAcm(-2), while at 50 mAcm(-2) this increase was from 1 to 8 hours. AC Impedance diagrams obtained for the Ti/SnO2-SbOx and Ti/SnO2-SbOx-RuO2 electrodes at the rest potential and at a potential in the OER region can be explained by a single equivalent circuit containing two elements in series. The results showed that the charge transfer resistance and the resistance of the oxide film are lower in the oxide film containing RuO2. Surface analysis of Ti/SnO2-SbOx, revealed that it is relatively porous and formed by clusters of small particles. The Ti/SnO2-SbOx-RuO2 (1%) film is more compact, though. XRD analysis showed that a Sn1-xTixO2 oxide is formed on the Ti/SnO2-SbOx with 1% and without RuO2 electrodes.

Sol phase and sol-gel transition in SnO2 colloidal suspensions

The effect of concentration on the structure of SnO2 colloids in aqueous suspension, on their spatial correlation and on the gelation process was studied by small angle x-ray scattering (SAXS). The shape of the experimental SAXS curves varies with suspension concentration. For diluted suspensions ([SnO2] less than or equal to 0.13 mol L-1), SAXS results indicate the presence of colloidal fractal aggregates with an internal correlation length xi congruent to 20 Angstrom, without any noticeable spatial correlation between them. This suggests that the aggregates are spatially arranged without any significant interaction like in ideal gas structures. For higher concentrations ([SnO2] = 0.16, 0.32, and 0.64 mol L-1), the colloidal aggregates are larger (xi = 24 Angstrom) and exhibit a certain degree of spatial correlation between them. The pair correlation function corresponding to the sol with the highest concentration (0.92 mol L-1) reveals a rather strong short range order between aggregates, characteristic of a fluid-like structure, with an average nearest-neighbor distance between aggregates d(1) = 125 Angstrom and an average second-neighbor distance d(2) = 283 Angstrom. The pair distribution function remains essentially invariant during the sol-gel transition, suggesting that gelation involves the formation of a few points of connection between the aggregates resulting in a gel network constituted by essentially linear chains of clusters..

Nonlinear electrical behaviour of the Cr2O3, ZnO, CoO and Ta2O5-doped SnO2 varistors

The effects of Cr2O3 on the properties of (Zn, Co, Ta)-doped SnO2 varistors were investigated in this study. The samples with different Cr2O3 concentrations were sintered at 1400 degrees C for 2 h. The properties of (Zn, Co, Ta, Cr)-doped SnO2 varistors were evaluated by XRD. dilatornetry, SEM, I-V and impedance spectroscopy. DC electrical characterization showed a dramatic increase ill the breakdown electrical field and in the nonlinear coefficient with the increase in Cr2O3 concentration. The grain size was found to decrease from 13 to 5 mu m with increasing the Cr2O3 content. The impedance data, represented by means of Nyquist diagrams, show two time constants, one at low frequencies and the other at high frequencies. (c) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.