Basic equations for suspension flows with interphase mass-transfer

In the case of suspension flows, the rate of interphase momentum transfer M(k) and that of interphase energy transfer E(k), which were expressed as a sum of infinite discontinuities by Ishii, have been reduced to the sum of several terms which have concise physical significance. M(k) is composed of the following terms: (i) the momentum carried by the interphase mass transfer; (ii) the interphase drag force due to the relative motion between phases; (iii) the interphase force produced by the concentration gradient of the dispersed phase in a pressure field. And E(k) is composed of the following four terms, that is, the energy carried by the interphase mass transfer, the work produced by the interphase forces of the second and third parts above, and the heat transfer between phases. It is concluded from the results that (i) the term, (-alpha-k-nabla-p), which is related to the pressure gradient in the momentum equation, can be derived from the basic conservation laws without introducing the "shared-pressure presumption"; (ii) the mean velocity of the action point of the interphase drag is the mean velocity of the interface displacement, upsilonBAR-i. It is approximately equal to the mean velocity of the dispersed phase, upsilonBAR-d. Hence the work terms produced by the drag forces are f(dc) . upsilonBAR-d, and f(cd) . upsilonBAR-d, respectively, with upsilonBAR-i not being replaced by the mean velocity of the continuous phase, upsilonBAR-c; (iii) by analogy, the terms of the momentum transfer due to phase change are upsilonBAR-d-GAMMA-c, and upsilonBAR-d-GAMMA-d, respectively; (iv) since the transformation between explicit heat and latent heat occurs in the process of phase change, the algebraic sum of the heat transfer between phases is not equal to zero. Q(ic) and Q(id) are composed of the explicit heat and latent heat, so that the sum Q(ic) + Q(id)) is equal to zero.

Numerical Simulation of Heat Transfer and Kinetics in the Bulk Growth of Silicon Carbide

The growth process of 2-inch silicon carbide (SiC) single crystals by the physical vapor transport method (or modified Lely method) has been modeled and simulated. The comprehensive process model incorporates the calculations of radio frequency (RF) induction heating, heat and mass transfer and growth kinetics. The transport equations for electromagnetic field, heat transfer, and species transport are solved using a finite volume-based numerical scheme called MASTRAPP (Multizone Adaptive Scheme for Transport and Phase Change Process). Temperature distribution for a 2-inch growth system is calculated, and the effects of induction heating frequency and current on the temperature distribution and growth rate are investigated. The predicted results have been compared with the experimental data.

3D Finite Volume Scheme for Czochralski Single Crystal Growth

Czochralski (Cz) technique, which is used for growing single crystals, has dominated the production of single crystals for electronic applications. The Cz growth process involves multiple phases, moving interface and three-dimensional behavior. Much has been done to study these phenomena by means of numerical methods as well as experimental observations. A three-dimensional curvilinear finite volume based algorithm has been developed to model the Cz process. A body-fitted transformation based approach is adopted in conjunction with a multizone adaptive grid generation (MAGG) technique to accurately handle the three-dimensional problems of phase-change in irregular geometries with free and moving surfaces. The multizone adaptive model is used to perform a three-dimensional simulation of the Cz growth of silicon single crystals.Since the phase change interface are irregular in shape and they move in response to the solution, accurate treatment of these interfaces is important from numerical accuracy point of view. The multizone adaptive grid generation (MAGG) is the appropriate scheme for this purpose. Another challenge encountered is the moving and periodic boundary conditions, which is essential to the numerical solution of the governing equations. Special treatments are implemented to impose the periodic boundary condition in a particular direction and to determine the internal boundary position and shape varying with the combination of ambient physicochemical transport process and interfacial dynamics. As indicated above that the applications and processes characterized by multi-phase, moving interfaces and irregular shape render the associated physical phenomena three-dimensional and unsteady. Therefore a generalized 3D model rather than a 2D simulation, in which the governing equations are solved in a general non-orthogonal coordinate system, is constructed to describe and capture the features of the growth process. All this has been implemented and validated by using it to model the low pressure Cz growth of silicon. Accuracy of this scheme is demonstrated by agreement of simulation data with available experimental data. Using the quasi-steady state approximation, it is shown that the flow and temperature fields in the melt under certain operating conditions become asymmetric and unsteady even in the absence of extrinsic sources of asymmetry. Asymmetry in the flow and temperature fields, caused by high shear initiated phenomena, affects the interface shape in the azimuthal direction thus results in the thermal stress distribution in the vicinity, which has serious implications from crystal quality point of view.

Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals

The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation.

Floating zone convection

The microgravity research, as a branch of the advanced sciences and a spe- cialized field of high technology, has been made in China since the late 1980's. The research group investigating microgravity fluid physics consisted of our col- leagues and the authors in the Institute of Mechanics of the Chinese Academy of Sciences (CAS), and we pay special attention to the floating zone convection as our first research priority. Now, the research group has expanded and is a part of the National Microgravity Laboratory of the CAS, and the research fields have been extended to include more subjects related to microgravity science. Howev- er, the floating zone convection is still an important topic that greatly holds our research interests.

Numerical simulation of condensation of bubbles under microgravity conditions by moving mesh method in the double-staggered grid

A numerical 2D method for simulation of two-phase flows including phase change under microgravity conditions is presented in this paper, with a level set method being coupled with the moving mesh method in the double-staggered grid systems. When the grid lines bend very much in a curvilinear grid, great errors may be generated by using the collocated grid or the staggered grid. So the double-staggered grid was adopted in this paper. The level set method is used to track the liquid-vapor interface. The numerical analysis is fulfilled by solving the Navier-Stokes equations using the SIMPLER method, and the surface tension force is modeled by a continuum surface force approximation. A comparison of the numerical results obtained with different numerical strategies shows that the double-staggered grid moving-mesh method presented in this paper is more accurate than that used previously in the collocated grid system. Based on the method presented in this paper, the condensation of a single bubble in the cold water under different level of gravity is simulated. The results show that the condensation process under the normal gravity condition is different from the condensation process under microgravity conditions. The whole condensation time is much longer under the normal gravity than under the microgravity conditions.

液气相变界面间断关系浅议

对池沸腾传热现象局部传递过程的细致分析(例如微重力池沸腾传热研究文献中关于热毛细效应作用及其成因的各种相互冲突的观点),涉及汽液相变界面两侧的间断关系.相变(蒸发或凝结)过程的非平衡性导致相界面两侧物理量对经典平衡态热力学中的相界面关系的偏离,分子动理论比拟模型、统计率模型和非平衡热力学模型均给出了相关描述,本文对此进行了详细评述,指出了各模型的优缺点,并对进一步的研究方向进行了讨论.

The Convective Instabilities in a Liquid-Vapor System with a Non-equilibrium Evaporation Interface

Rayleigh-Marangoni-B,nard instability in a system consisting of a horizontal liquid layer and its own vapor has been investigated. The two layers are separated by a deformable evaporation interface. A linear stability analysis is carried out to study the convective instability during evaporation. In previous works, the interface is assumed to be under equilibrium state. In contrast with previous works, we give up the equilibrium assumption and use Hertz-Knudsen's relation to describe the phase change under non-equilibrium state. The influence of Marangoni effect, gravitational effect, degree of non-equilibrium and the dynamics of the vapor on the instability are discussed.

La envolvente de los edificios como generador de calor y energía eléctrica

[ES]El presente documento analiza las principales funciones que se le exigen actualmente a un sistema constructivo; concretamente, a la envolvente de los edificios. Se plantean inicialmente las causas y necesidades que han derivado en el nuevo concepto de envolvente así como las nuevas funciones que se le son exigibles. Se describen los conceptos relativos a los diferentes sistemas constructivos, a los métodos de ventilación natural y, a continuación, se analizan los criterios de generación fotovoltaica y solar térmica en los edificios, además de la integración de estos sistemas en los edificios. También se analizan los fundamentos sobre materiales de cambio de fase. Todo ello permite presentar los criterios de construcción de edificios ecoeficientes. Asimismo se presentan una serie de soluciones arquitectónicas desde el punto de vista de la eficiencia energética.

Pulse NMR in solids : chemical shift, lead fluoride and thorium hydride

Part one of this thesis consists of two sections. In the first section the fluorine chemical shift of a single crystal CaF_2 has been measured as a function of external pressure up to 4 kilobar at room temperature using multiple pulse NMR techniques. The pressure dependence of the shift is found to be -1.7 ± 1 ppm/kbar, while a theoretical calculation using an overlap model predicts a shift of -0.46 ppm/kbar. In the second section a separation of the chemical shift tensor into physically meaningful "geometrical" and "chemical" contributions is presented and a comparison of the proposed model calculations with recently reported data on hydroxyl proton chemical shift tensors demonstrates, that for this system, the geometrical portion accounts for the qualitative features of the measured tensors.

Part two of the thesis consists of a study of fluoride ion motion in β-PbF_2 doped with NaF by measurement of the ^(19)F transverse relaxation time (T_2), spin lattice relaxation time (T_1) and the spin lattice relaxation time in the rotating frame (T_(1r)). Measurements over the temperature range of -50°C to 160°C lead to activation energies for T_1, T_(1r) and T_2 of 0.205 ± 0.01, 0.29 + 0.02 and 0.27 ± 0.01 ev/ion, and a T_(1r) minimum at 56°C yields a correlation time of 0.74 μsec. Pressure dependence of T_1 and T_2 yields activation volumes of <0.2 cm^3/g-mole and 1.76 ± 0.05 cm^3/g-mole respectively. These data along with the measured magnetic field independence of T_1 suggest that the measured T_1's are not caused by ^(19)F motion, but by thermally excited carriers.

Part three of the thesis consists of a study of two samples of Th_4H_(15), prepared under different conditions but both having the proper ratio of H/Th (to within 1%). The structure of the Th_4H_(15) as suggested by X-ray measurements is confirmed through a moment analysis of the rigid lattice line shape. T_1 and T_2 measurements above 390 K furnish activation energies of 16.3 ± 1.2 kcal/mole and 18.0 ± 3.0 kcal/mole, respectively. Below 350 K, T_(1r) measurements furnish an activation energy of 10.9 ± 0.7 kcal/mole, indicating most probably more than a single mechanism for proton motion. A time-temperature hysteresis effect of the proton motion was found in one of the two samples and is strongly indicative of a phase change. T_1 at room temperature and below is dominated by relaxation due to conduction electrons with the product T_1T being 180 ± 10 K-sec. Using multiple pulse techniques to greatly reduce homonuclear dipolar broadening, a temperature-dependent line shift was observed, and the chemical shift anisotropy is estimated to be less than 16 ppm.

Ge_2Sb_2Te_5相变薄膜光学及擦除性能研究

利用蓝绿激光对非晶态Ge2Sb2Te5相变薄膜进行擦除性能的研究，分别用1000ns，500ns，100ns，60ns脉宽的蓝绿激光进行实验，结果表明，一定脉宽下，反射率对比度随擦除功率的增加而增大，并且，在1000ns，500ns，100ns，60ns的激光作用时间范围内，非晶态薄膜均可转变成晶态，对于脉宽为60ns的蓝绿激光，擦除功率大于4．49mW后，薄膜的反射率对比度高于15％，这表明Ge2Sb2Te5相变薄膜在短脉宽、低擦除功率条件下，可具有较高的晶化速度，同时，分析了非晶态和晶态Ge2Sb2T

新一代无机相变光存储材料研究进展

光存储技术正在向着大容量、高数据传输率的方向发展。新一代的光存储将从目前广泛使用的红光波段向蓝光波段发展。综述了可用于新一代高密度光存储无机相变材料的研究现状和最新进展，并对今后的发展前景进行了简要的展望。

Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses

The femtosecond pump-probe technique was used to study the carrier dynamics of amorphous Ge2Sb2Te5 films. With carrier density at around 10(20)-10(21) cm(-3), carriers were excited within 1 ps and recovered to the initial state for less than 3 ns. On the picosecond time scale, the carrier relaxation consists of two components: a fast process within 5 ps and a slow process after 5 ps. The relaxation time of the fast component is a function of carrier density, which increases from 1.9 to 4.3 ps for the carrier density changing from 9.7x10(20) cm(-3) to 3.1x10(21) cm(-3). A possible interpretation of the relaxation processes is elucidated. In the first 5 ps the relaxation process is dominated by an intraband carrier relaxation and the carrier trapping. It is followed by a recombination process of trapped carriers at later delay time. (c) 2007 American Institute of Physics.

Si underlayer induced nano-ablation in AgInSbTe thin films

AgInSbTelSi thin films on glass substrates are prepared by dc magnetron sputtering at room temperature. Using Si underlayer as the thermal diffusion layer, the super-resolution nano-ablation holes with a size of 70nm in the AgInSbTe phase change films are obtained by a far-field focused laser experimental setup, with laser wavelength 405nm and objective-lens numerical aperture 0.90. The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.

飞秒激光辐照ZnO晶体

利用飞秒激光对ZnO晶体进行辐照，对辐照前后的晶体样品进行发光光谱及拉曼光谱检测。辐照后发光光谱的某些发光峰强度有明显增强，但未产生新的发光峰，表明没有新的缺陷结构产生，但晶体内锌空位、间隙位锌、间隙位缺陷浓度增加。拉曼光谱结果表明，辐照后ZnO晶体未产生相变，但随着辐照激光功率的增大，拉曼峰327 cm-1，437 cm-1强度明显减弱，表明在飞秒激光辐照作用下氧化锌的结晶程度下降。但574 cm-1峰值却随着辐照功率的增大而变大，分析表明该拉曼峰很可能是由于晶体内间隙位缺陷所致。同时实验过程中观察到飞