ABRASIVE WEAR OF LUBRICATED CONTACTS.

A foil bearing arrangement has been used to investigate the wear of carbon graphite materials running against 316 stainless steel in the presence of a hydrodynamic film of fluid contaminated with particulate material. As the thickness of the fluid film is reduced so the wear rate of the carbon reaches a maximum value, further reductions in thickness actually producing reduced wear rates. Possible mechanisms and implications of this behaviour are discussed.

The effect of surface hardening on the elastic shakedown of elliptical contacts

The effect of varying both the aspect ratio and the coefficient of friction of contacts with elliptical geometry on their elastic shakedown performance has been examined theoretically for surfaces with two types of subsurface hardness or strength profiles. In stepwise hardening the hard layer is of uniform strength while in linear hardening its strength reduces from a maximum at the surface to that of the core at the base of the hardened layer. The shakedown load is expressed as the ratio of the maximum Hertzian pressure to the strength of the core material. As the depth of hardening, expressed as a multiple of the elliptical semi-axis, is increased so the potential shakedown load increases from a level that is appropriate to a uniform half-space of unhardened material to a value reflecting the hardness of the surface and near-surface material. In a step-hardened material, the shakedown limit for a surface 'pummelled' by the passage of a sequence of such loads reaches a cut-off or plateau value, which cannot be exceeded by further increases in hardening depth irrespective of the value of the friction coefficient. For a linear-hardened material the corresponding plateau is approached asymptotically. The work confirms earlier results on the upper bounds on shakedown of both point and line contacts and provides numerical values of shakedown loads for intermediate geometries. In general, the case depth required to achieve a given shakedown limit reduces in moving from a transversely moving nominal line load to an axisymmetric point load.

The influence of repeated loading, residual stresses and shakedown on the behaviour of tribological contacts

Most tribological pairs carry their service load not just once but for a very large number of repeated cycles. During the early stages of this life, protective residual stresses may be developed in the near surface layers which enable loads which are of sufficient magnitude to cause initial plastic deformation to be accommodated purely elastically in the longer term. This is an example of the phenomenon of 'shakedown' and when its effects are incorporated into the design and operation schedule of machine components this process can lead to significant increases in specific loading duties or improvements in material utilization. Although the underlying principles can be demonstrated by reference to relatively simple stress systems, when a moving Hertzian pressure distribution in considered, which is the form of loading applicable to many contact problems, the situation is more complex. In the absence of exact solutions, bounding theorems, adopted from the theory of plasticity, can be used to generate appropriate load or shakedown limits so that shakedown maps can be drawn which delineate the boundaries between potentially safe and unsafe operating conditions. When the operating point of the contact lies outside the shakedown limit there will be an increment of plastic strain with each application of the load - these can accumulate leading eventually to either component failure or the loss of material by wear. © 2005 Elsevier Ltd. All rights reserved.

A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage

The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer, the TPS offers a better trade-off between the on-state voltage and the switching speed. The active p-layer also helps to stabilise the Schottky contact, and hence the electrical data distributions are more concentrated. Regarding the floating p-layer in the termination region, its purpose is to reduce the peak electric fields, and the TPS demonstrates a high breakdown voltage with a compact termination width, less than 70% of the state-of-the-art devices on the market. Experimental results have shown that the 600-V TPS rectifier has an ultra-low on-state voltage of 0.98 V at 250 A/cm 2, a fast turn-off time of 75 ns by the standard RG1 test (I F=0.5A, I R=1A, and I RR=0.25A) and a breakdown voltage over 720 V. It is noteworthy that the p-layers in the active and termination regions can be formed at no extra cost for the use of self-alignment process. © 2012 IEEE.

The geometry and the number of contacts of monodisperse sphere packs using X-ray tomography

The three-dimensional structure of very large samples of monodisperse bead packs is studied by means of X-Ray Computed Tomography. We retrieve the coordinatesofeach bead inthe pack and wecalculate the average coordination number by using the tomographic images to single out the neighbors in contact. The results are compared with the average coordination number obtained in Aste et al. (2005) by using a deconvolution technique. We show that the coordination number increases with the packing fraction, varying between 6.9 and 8.2 for packing fractions between 0.59 and 0.64. © 2005 Taylor & Francis Group.

Characterization of vertical Mo/diamond Schottky barrier diode from non-ideal I-V and C-V measurements based on MIS model

In this study, we investigated non-ideal characteristics of a diamond Schottky barrier diode with Molybdenum (Mo) Schottky metal fabricated by Microwave Plasma Chemical Vapour Deposition (MPCVD) technique. Extraction from forward bias I-V and reverse bias C- 2-V measurements yields ideality factor of 1.3, Schottky barrier height of 1.872 eV, and on-resistance of 32.63 mö·cm2. The deviation of extracted Schottky barrier height from an ideal value of 2.24 eV (considering Mo workfunction of 4.53 eV) indicates Fermi level pinning at the interface. We attributed such non-ideal behavior to the existence of thin interfacial layer and interface states between metal and diamond which forms Metal-Interfacial layer-Semiconductor (MIS) structure. Oxygen surface treatment during fabrication process might have induced them. From forward bias C-V characteristics, the minimum thickness of the interfacial layer is approximately 0.248 nm. Energy distribution profile of the interface state density is then evaluated from the forward bias I-V characteristics based on the MIS model. The interface state density is found to be uniformly distributed with values around 1013 eV - 1·cm- 2. © 2013 Elsevier B.V.

Design and optimization of planar mesa termination for diamond Schottky barrier diodes

In this paper, we present planar mesa termination structure with high k dielectric Al2O3 for high-voltage diamond Schottky barrier diode. Analysis, design, and optimization are carried out by simulations using finite element technology computer-aided design (TCAD) Sentaurus Device software. The performances of planar mesa termination structure are compared to those of conventional field plate termination structure. It is found that optimum geometry of planar mesa terminated diode requires shorter metal plate extension (1/3 of the field plate terminated diode). Consequently, planar mesa terminated diode can be designed with bigger Schottky contact to increase its current carrying capability. Breakdown performance of field plate termination structure is limited at 1480 V due to peak electric field at the corner of Schottky contact (no oxide breakdown occurs). In contrast, peak electric field in planar mesa termination structure only occurs in the field oxide such that its breakdown performance is highly dependent on the oxide material. Due to Al2O3 breakdown, planar mesa termination structure suffers premature breakdown at 1440 V. Considering no oxide breakdown occurs, planar mesa termination structure can realize higher breakdown voltage of 1751 V. Therefore, to fully realize the potential of planar mesa terminated diode, it is important to choose suitable high k dielectric material with sufficient breakdown electric field for the field oxide. © 2013 Elsevier B.V.