UV-sensitive P compounds: Release mechanism, seasonal fluctuation and inhibitory effects on alkaline phosphatase activity in a shallow Chinese freshwater lake (Donghu Lake)

Filtrable phosphorus compounds in a shallow Chinese freshwater lake (Donghu Lake) were fractionated by Sephadex G-25 gel-filtration chromatography. Some portions of those compounds released soluble reactive phosphorus upon irradiation with low dose ultraviolet light. Catalase and a hydroxyl radical scavenger (mannitol) markedly prevented photosensitive phosphorus release. The observed effects may be explained by the action of oxidizing reagents such as hydroxyl radicals, produced in photochemical reactions between UV irradiation and humic substances in the water. There was a strong seasonality in UV-sensitive P (UVSP) release. Michaels constants (K-m) of total alkaline phosphatase in the lake water showed a direct positive relation to UVSP. Plot of K-m against the UVSP/phosphomonoester ratio reveals a strong relationship between the two variables. These results suggest that in some situations UVSP may be a competitive inhibitor of alkaline phosphatase activity in the lake. The competitive inhibition of fractionated UVSP on alkaline phosphatase reagent (Sigma) apparently supports this hypothesis.

GaN基UV-LED材料生长和特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Realization of MMI power splitter by UV-light imprinting technique using hybrid sol-gel SiO2 materials

An efficient fabrication scheme of buried ridge waveguide devices is demonstrated by UV-light imprinting technique using organic-in organic hybrid sol-gel Zr-doped SiO2 materials. The refractive indices of a guiding layer and a cladding layer for the buried ridge waveguide structure are 1.537 and 1.492 measured at 1550 nm, respectively. The tested results show more circular mode profiles clue to existence of the cladding layer. A buried ridge single-mode waveguide operating at 1550 nm has a low propagation loss (0.088 dB/cm) and the 1 x 2 MMI power splitter exhibits uniform outputs, with a very low splitting loss of 0.029 dB at 1549 nm.

Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs

AlGaN-based resonant-cavity-enhanced (RCE) p-i-n photodetectors (PDs) for operating at the wavelength of 330 nm were designed and fabricated. A 20.5-pair AlN/Al0.3Ga0.7N distributed Bragg reflector (DBR) was used as the back mirror and a 3-pair AlN/Al0.3Ga0.7N DBR as the front one. In the cavity is a p-GaN/i-GaN/n-Al0.3Ga0.7N structure. The optical absorption of the RCE PD structure is at most 59.8% deduced from reflectance measurement. Selectively enhanced by the cavity effect, a response peak of 0.128 A/W at 330 nm with a half-peak breadth of 5.5 nm was obtained under zero bias. The peak wavelength shifted 15 nm with the incident angle of light increasing from 0 degrees to 60 degrees.

Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector

The leakage mechanism of GaN-based p-i-n (p-AlGaN/i-GaN/n-GaN) UV detector has been investigated. With the same dislocation density, devices made from material with higher density of V-pits on surface produce larger leakage current. SEM images show that some V-pits penetrate into i-GaN layer, sometimes even the n-GaN layer. If p-ohmic contact metal (Ni/Au) deposits in the V-pits, Schottky contact would be formed at the interface of metal and i-GaN, or form ohmic contact at the interface of metal and n-GaN. The existence of parallel Schottky junction and ohmic contact resistance enhances the leakage current greatly.

Birefringence of UV-written channel waveguides

The combination of the effective index method and the transfer matrix method is adopted to calculate the indices of quasi-TE and quasi-TM modes in a UV-written channel waveguide, and the difference between the indices is used to characterize its birefringence. The dimensions, the ratio of width to thickness, the original index of the core layer, the index of the cladding, and the index profile are all taken into account. The simulation results indicate that the birefringence decreases with increasing dimensions, ratio of width to thickness, and indices of the cladding; on the contrary, increases of the original index of the core layer and of the vertical index gradient intensified the birefringence. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Frequency dependence of junction capacitance of GaN p-i-n UV detectors

In this paper frequency dependence of small-signal capacitance of p-i-n UV detectors, which were fabricated on GaN grown on sapphire substrate by metalorganic chemical vapor deposition, has been studied. The Schibli-Milnes model was used to analyze the capacitance-frequency characteristics. According to high frequency C-V measurements, the deep level mean concentration is about 2.98 x 10(20) cm(-3). The deep level is caused by the un-ionised Mg dopant. The calculated Mg activation energy is 260 meV and the hole thermal capture cross section of the deep level is about 2.73 x 10(-22) cm(2). The applicability of the Schibli-Milnes model is also discussed when the concentration of deep levels exceeds that of the heavily doped n-side. It is concluded that the analytic expression of the Schibli-Milnes model can still be used to describe the capacitance-frequency characteristics of GaN p-i-n UV detectors in good agreement with experiment. (c) 2005 Elsevier Ltd. All rights reserved.

Pressure behaviour of the UV and green emission bands in ZnO micro-rods

The pressure behavior of the ultraviolet (UV) and green emission bands in ZnO tetrapod-like micro-rods has been investigated at 300 and 70 K, respectively. The pressure coefficient of the UV band at 300 K is 24.5 meV/GPa, consistent with that of the band gap of bulk ZnO. However, the pressure coefficient of the green band is 25 meV/GPa, far larger than previous literature reports. The green band in this work originates from Cu-related emission, as confirmed by the fine structure observed in the spectra at 10 K. The pressure coefficients of four phonon replicas of the free exciton emission (FX) at 70 K are 21.0, 20.2, 19.8, and 19.3 meV/GPa, respectively. The energy shift rate of the FX emission and the LO phonon energies is then determined to be 21.4 and 0.55 meV/GPa. The pressure coefficient of the neutral donor bound exciton ((DX)-X-0) transition is 20.5 meV/GPa, only 4% smaller than that of FX. This confirms that the (DX)-X-0 emission corresponds to excitons bound to neutral shallow donors. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection

Homoepitaxial growth of 4H-SiC p(+)/pi/n(-) multi-epilayer on n(+) substrate and in-situ doping of p(+) and pi-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H-2. The surface morphologies, homogeneities and doping concentrations of the n(-)-single-epilayers and the p(+)/pi/n(-) multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM and Raman investigation showed that both single- and,multi-epilayers have good surface morphologies and homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in pi layer. The UV photodetectors fabricated on 4H-SiC p(+)/pi/n(-) multi-epilayers showed low dark current and high detectivity in the UV range.

Mode analysis of the UV-written channel waveguide - art. no. 60340J

The effective index method (EIM) was adopted to model the channel waveguide patterned by the UV in photosensitive silica film. The effective indexes of the different dimension symmetrical and asymmetrical channel waveguides were calculated, and the resource of the error of the method was pointed out. At last, the dimension rang to propagate single mode was presented.

硼磷酸盐及相关基质中稀土离子的UV－VUV光谱和XAFS

采用高温固相反应合成了稀土离子激活的碱土硼磷酸盐MBPO_5:RE（M=Ca, Sr, Ba；RE＝Sm, Eu, Tb, Dy), Ba_3BPO_7:RE和Ba_3BP_O_(12):RE、稀土硼磷酸盐Ln_7BP_2P_(17):RE (Ln=La, Gd)、碱土（稀土）磷酸盐M_3(PO_4)_2:RE (M=Sr, Ba),ABLa(PP_4)_2:Ce,Tb (A=K, Na;B＝Mg, Zn）、碱土（稀土）硼酸盐SrB_4O_7:RE（Re＝Sm, Eu），BaB_8O_(13):Eu，SrB_6O_(10):Sm, M_3Gd_2(BO_3）_4:RE (M＝Ca, Sr)，B_3O6:Eu(RE=La, Gd)和稀土硼钨酸盐Cd_3BWO_9:Eu。通过XRD、IR光谱和Raman光谱等表征了其结构。测定了上述19个基质的数十个发光体的UV佩VUV光谱和RE-L_3（RE=Sm,Eu, Gd)边的XANES和EXAFS。碱土硼磷酸盐Ba_3BPO_7和Ba_3BP_3O_(12)、稀土硼磷酸盐Ln_7BP_2O_(17) (Ln=La, Gd)和稀土钨硼酸盐Gd3Bwo9等6个基质中稀土离子的UV-VUV光谱和除个别基质（REB_3O_6等）外的VUV光谱均属首次报道。发现土稀土离子激活的这些发光体在VUV范围有丰富的基质吸收带。认为基质中阴离子的结构和基质的晶体结构可能是影响基质的吸收带位置的重要因素。通过XANEs和UV-VUV光谱的联系，结合经验公式首次确证了一些复合氧化物基质中一些RE~(3＋)在vuv范围的f-d跃迁位置。根据VUV光谱测定结果推测了一些基质中RE~(3+)的CTB位置。首次应用RE-L_3边的XANES和UV-VUV光谱两种方法分析比较了RE~(3＋)(RE=Eu, Sm)离子在空气条件下在碱土硼磷酸盐、硼酸盐和磷酸盐基质中的还原。首次应用高分辨发射光谱和RE-L_3边的EXAFS研究了在一些基质中发光中心的配位数、键长和格位对称性等结构因素。

Diffractive microlens with a cascade focal plane fabricated by single mask UV-photolithography and common KOH:H2O etching

A diffractive microlens with a cascade focal plane along the main optical axis of the device is fabricated using a low-cost technique mainly including single mask ultraviolet (UV) photolithography and dual-step KOH:H2O etching. Based on the evolutionary behavior of converse pyramid-shaped microholes (CPSMs) preshaped over a {100}-oriented silicon wafer in KOH etchant, the first-step KOH etching is performed to transfer initial square micro-openings in a SiO2 film grown by plasma enhanced chemical vapor deposition (PECVD) and patterned by single mask UV-photolithography, into CPSMs with needed dimension. After completely removing a thinned SiO2 mask, basic annular phase steps with a relatively steep sidewall and scheduled height can be shaped in the overlapped etching region between the neighboring silicon concave-arc microstructures evolved from CPSMs through the second-step KOH etching. Morphological measurements demonstrate a desirable surface of the silicon microlens with a roughness in nanometer scale and the feature height of the phase steps formed in the submicrometer range. Conventional optics measurements of the plastic diffractive microlens obtained by further hot embossing the fine microrelief phase map over the nickel mask made through a common electrochemical method indicate a highly efficient cascaded focusing performance.

UV-B辐射和CO2浓度倍增对树木幼苗次生代谢的影响

为了揭示UV-B辐射（11.66KJ／m2.d）和CO2浓度倍增复合作用对树木幼苗次生代谢产物变化规律及其对生长发育的影响，在室外用开顶箱，对白桦、红皮云杉和红松幼苗进行了模拟研究。结果表明，三种幼苗针叶片酚类含量增幅和变化趋势均不同。白桦类黄酮含量和305nm吸收值变化不大，红皮云杉和红松后期增加明显。白桦总黄酮和邻苯二酚含量增幅大于红皮云杉和红松。白桦和红松Chl和Car含量呈下降趋势，红皮云杉后期略有增加。白桦休眠侧芽极性小的酚类物质增加明显，根系酚类略有增加，枝条酚类无变化。红松越冬侧芽酚类和邻苯二酚含量增加明显。复合处理使三种幼苗PAL活性增加。酚类物质含量与其清除O-2和OH的能力基本成量效关系。单位多酚清除OH能力，红皮云杉＞红松＞白桦；多酚与蛋白质结合能力，白桦＞红松＞红皮云杉；MDA增幅，红松＞白桦＞红皮云杉。三种幼苗SOD活性后期增加明显。邻苯二酚对Chl、SOD、CAT活性和PSII有破坏作用。白桦酚类物质对SOD和CAT活性有破坏作用。复合处理对高生长抑制的程度白桦大于红松，而对红皮云杉影响不显著，体现UV-B和CO2处理的相互抵消作用。白桦根部生物量增加。红松针叶伸长受到抑制。可见，UV-B和CO2处理诱导的次生产物与幼苗生长发育有关。