Effect of Dilatation on the Elasto-Plastic Response of Bulk Metallic Glasses Under Indentation

Elasto-plastic response of bulk metallic glasses (BMGs) follows closely the response of granular materials through pressure dependent (or normal stress) yield locus and shear stress induced material dilatation. On a micro-structural level, material dilatation is responsible for stress softening and formation of localized shear band, however its influence on the macro-scale flow and deformation is largely unknown. In this work, we systematically analyze the effect of material dilatation on the gross indentation response of Zr-based BMG via finite element simulation. The strengthening/softening effect on the load-depth response and corresponding stress-strain profiles are presented in light of differences in elastic-plastic regimes under common indenters. Through comparison with existing experimental results, we draw conclusions regarding selection of suitable dilatation parameters for accurately predicting the gross response of BMGs

The effect of T-stress on plane strain dynamic crack growth in elastic-plastic materials

In this paper, the effects of T -stress on steady, dynamic crack growth in an elastic-plastic material are examined using a modified boundary layer formulation. The analyses are carried out under mode I, plane strain conditions by employing a special finite element procedure based on moving crack tip coordinates. The material is assumed to obey the J (2) flow theory of plasticity with isotropic power law hardening. The results show that the crack opening profile as well as the opening stress at a finite distance from the tip are strongly affected by the magnitude and sign of the T -stress at any given crack speed. Further, it is found that the fracture toughness predicted by the analyses enhances significantly with negative T -stress for both ductile and cleavage mode of crack growth.

Photocatalytic properties of KBiO(3) and LiBiO(3) with tunnel structures

In the present study, KBiO(3) is synthesized by a standard oxidation technique while LiBiO(3) is prepared by hydrothermal method. The synthesized catalysts are characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), BET surface area analysis and Diffuse Reflectance Spectroscopy (DRS). The XRD patterns suggest that KBiO(3) crystallizes in the cubic structure while LiBiO(3) crystallizes in orthorhombic structure and both of these adopt the tunnel structure. The SEM images reveal micron size polyhedral shaped KBiO(3) particles and rod-like or prismatic shape particles for LiBiO(3). The band gap is calculated from the diffuse reflectance spectrum and is found to be 2.1 eV and 1.8 eV for KBiO(3) and LiBiO(3), respectively. The band gap and the crystal structure data suggest that these materials can be used as photocatalysts. The photocatalytic activity of KBiO(3) and LiBiO(3) are evaluated for the degradation of anionic and cationic dyes, respectively, under UV and solar radiations.

Effect of non-plastic fines on cyclic behaviour of sandy soils

This paper presents the results of the detailed studies on stress - controlled cyclic triaxial tests on sandy soils from Ahmedabad, Gujarat, India subjected to a loading frequency of 0.1 Hz in cyclic triaxial equipment. Undrained stress controlled cyclic triaxial tests were carried out on cylindrical samples of size 50 mm diameter and height 100 mm with different cyclic stress ratios. Laboratory evaluations were carried out to compare the cyclic resistance of clean sand to that of sand with various fines contents at a constant gross void ratio. The gross void ratio considers the voids formed by sand particles and fines. The effects of gross void ratio with and without fines on pore water pressure build up and liquefaction potential of sandy soils in stress controlled tests are presented. The results obtained from this study provide direct evidence that the limiting silt content plays an important role in the cyclic resistance of sandy soils. Below the limiting silt content the cyclic resistance decreases until the limiting silt content is reached and then the cyclic resistance increases.

Performance Enhancement of the Tunnel Field Effect Transistor using SiGe Source

Due to extremely low off state current (IOFF) and excellent sub-threshold characteristics, the tunnel field effect transistor (TFET) has attracted a lot of attention for low standby power applications. In this work, we aim to increase the on state current (ION) of the device. A novel device architecture with a SiGe source is proposed. The proposed structure shows an order of improvement in ION compared to the conventional Si structure. A process flow adaptable to conventional CMOS technology is also addressed.

A Simulation Based Study and Analysis of Double Gate Tunnel FET Performance for Low Stand-By Power Applications

The conventional metal oxide semiconductor field effect transistor (MOSFET)may not be suitable for future low standby power (LSTP) applications due to its high off-state current as the sub-threshold swing is theoretically limited to 60mV/decade. Tunnel field effect transistor (TFET) based on gate controlled band to band tunneling has attracted attention for such applications due to its extremely small sub-threshold swing (much less than 60mV/decade). This paper takes a simulation approach to gain some insight into its electrostatics and the carrier transport mechanism. Using 2D device simulations, a thorough study and analysis of the electrical parameters of the planar double gate TFET is performed. Due to excellent sub-threshold characteristics and a reverse biased structure, it offers orders of magnitude less leakage current compared to the conventional MOSFET. In this work, it is shown that the device can be scaled down to channel lengths as small as 30 nm without affecting its performance. Also, it is observed that the bulk region of the device plays a major role in determining the sub-threshold characteristics of the device and considerable improvement in performance (in terms of ION/IOFF ratio) can be achieved if the thickness of the device is reduced. An ION/IOFF ratio of 2x1012 and a minimum point sub-threshold swing of 22mV/decade is obtained.