Analysis of growth layers in the teeth of Tursiops truncatus using light microscopy, microradiography, and SEM

Preliminary results show microradiography and scanning electron microscopy (SEM) to be more accurate methods of accessing growth layer groups (GLGs) in the teeth of Tursiops truncatus than transmitted light microscopy. Microradiography shows the rhythmic deposition of mineral as alternating radiopaque and radiolucent layers. It improves the resolution of GLGs near the pulp cavity in older individuals, better than either SEM or light microscopy. SEM of etched sections show GLGs as ridges and grooves which are easily counted from the micrograph. SEM also shows GLGs to be composed of fine incremental layers of uniform size and number which may allow for more precise age determination. Accessory layers are usually hypomineralized layers within the hypermineralized layer of the GLG and are more readily distinguishable as such in SEM of etched sections and microradiographs than in thin sections viewed under transmitted light. The neonatal line is hypomineralized, appearing translucent under transmitted light, radiolucent in a microradiograph, and as a ridge in SEM. (PDF contains 6 pages.)

Stability of Hypervelocity Boundary Layers

The early stage of laminar-turbulent transition in a hypervelocity boundary layer is studied using a combination of modal linear stability analysis, transient growth analysis, and direct numerical simulation. Modal stability analysis is used to clarify the behavior of first and second mode instabilities on flat plates and sharp cones for a wide range of high enthalpy flow conditions relevant to experiments in impulse facilities. Vibrational nonequilibrium is included in this analysis, its influence on the stability properties is investigated, and simple models for predicting when it is important are described.

Transient growth analysis is used to determine the optimal initial conditions that lead to the largest possible energy amplification within the flow. Such analysis is performed for both spatially and temporally evolving disturbances. The analysis again targets flows that have large stagnation enthalpy, such as those found in shock tunnels, expansion tubes, and atmospheric flight at high Mach numbers, and clarifies the effects of Mach number and wall temperature on the amplification achieved. Direct comparisons between modal and non-modal growth are made to determine the relative importance of these mechanisms under different flow regimes.

Conventional stability analysis employs the assumption that disturbances evolve with either a fixed frequency (spatial analysis) or a fixed wavenumber (temporal analysis). Direct numerical simulations are employed to relax these assumptions and investigate the downstream propagation of wave packets that are localized in space and time, and hence contain a distribution of frequencies and wavenumbers. Such wave packets are commonly observed in experiments and hence their amplification is highly relevant to boundary layer transition prediction. It is demonstrated that such localized wave packets experience much less growth than is predicted by spatial stability analysis, and therefore it is essential that the bandwidth of localized noise sources that excite the instability be taken into account in making transition estimates. A simple model based on linear stability theory is also developed which yields comparable results with an enormous reduction in computational expense. This enables the amplification of finite-width wave packets to be taken into account in transition prediction.

Molecular Antennas and Photoactive Nanomaterials based on Energy Transfer Processes

110 p.

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on (200)-plane LiAlO2 substrate by metal-organic chemical vapour deposition (MOCVD) method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. The high transmittance (80%), sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at similar to 3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.