PGPRs and nitrogen-fixing legumes: a perfect team for efficient Cd phytoremediation?

Cadmium (Cd) is a toxic, biologically non-essential and highly mobile metal that has become an increasingly important environmental hazard to both wildlife and humans. In contrast to conventional remediation technologies, phytoremediation based on legume rhizobia symbiosis has emerged as an inexpensive decontamination alternative which also revitalize contaminated soils due to the role of legumes in nitrogen cycling. In recent years, there is a growing interest in understanding symbiotic legume rhizobia relationship and its interactions with Cd. The aim of the present review is to provide a comprehensive picture of the main effects of Cd in N-2-fixing leguminous plants and the benefits of exploiting this symbiosis together with plant growth promoting rhizobacteria to boost an efficient reclamation of Cd-contaminated soils.

Is the assumption of perfect channel-state information in fading channels a good assumption?

Fading channels, which are used as a model for wireless communication, are often analyzed by assuming that the receiver is aware of the realization of the channel. This is commonly justified by saying that the channel varies typically slowly with time, and the receiver is thus able to estimate it. However, this assumption is optimistic, since it is prima facie not clear whether the channel can be estimated perfectly. This paper investigates the quality of this assumption by means of the channel capacity. In particular, results on the channel capacity of fading channels are presented, both when the receiver is aware of the realization of the channel and when it is aware only of its statistics. A comparison of these results demonstrates that information- theoretic analyses of fading channels that are based on the assumption that the receiver is aware of the channel's realization can yield helpful insights, but have to be taken with a pinch of salt. ©2009 IEEE.

On the existence of Zeno behavior in hybrid systems with non-isolated zeno equilibria

This paper presents proof-certificate based sufficient conditions for the existence of Zeno behavior in hybrid systems near non-isolated Zeno equilibria. To establish these conditions, we first prove sufficient conditions for Zeno behavior in a special class of hybrid systems termed first quadrant interval hybrid systems. The proof-certificate sufficient conditions are then obtained through a collection of functions that effectively "reduce" a general hybrid system to a first quadrant interval hybrid system. This paper concludes with an application of these ideas to Lagrangian hybrid systems, resulting in easily verifiable sufficient conditions for Zeno behavior. © 2008 IEEE.

Compatibility relationship among reaction equilibria, equivalence principle of reaction approaches, and silicon contamination in semiconductors

This paper discovers some shortcomings in the algorithm for the incorporation of Si into GaAs in the GaAs VPE process. These faults arise from neglecting a link, the compatibility relationship, in chemical thermodynamics. The meaning of said relationship is as follows: In an equilibrium complex system, each species can only contribute one and the same quantity (its equilibrium quantity) to the different equilibria of the various reactions involving it; yet even under this restriction, every equilibrium constant is satisfied, and all the reaction equilibria coexist compatibly in the system. Only by adding the relationship can the equilibrium theory for the complex system be complete. This paper also tells its position in chemical thermodynamics. Such a compatibility concept directly leads to an equivalence principle: In a complex system, a certain species can usually be simultaneously formed by many chemical reactions; when the system has reached equilibrium under fixed environmental conditions, the equilibrium quantity of said species calculated according to each chemical equation of these reactions will be equal and the various reaction approaches will be equivalent, provided that for all the reactants and all the other products of these reactions their equilibrium quantities in the system are respectively taken as corresponding knowns for the calculations, which is extremely useful for seeking a functional relation among the species' equilibrium quantities in a system (Si contamination is one of the examples). Under the guidance of those arguments, the various schools' algorithms for the Si contamination can be uniformized and simplified, and the contamination quantity relation between Si and O, two very important impurities, is found.

Phase equilibria and plate-fluid interfacial tensions for associating hard sphere fluids confined in slit pores

The excess Helmholtz free energy functional for associating hard sphere fluid is formulated by using a modified fundamental measure theory [Y. X. Yu and J. Z. Wu, J. Chem. Phys. 117, 10156 (2002)]. Within the framework of density functional theory, the thermodynamic properties including phase equilibria for both molecules and monomers, equilibrium plate-fluid interfacial tensions and isotherms of excess adsorption, average molecule density, average monomer density, and plate-fluid interfacial tension for four-site associating hard sphere fluids confined in slit pores are investigated. The phase equilibria inside the hard slit pores and attractive slit pores are determined according to the requirement that temperature, chemical potential, and grand potential in coexistence phases should be equal and the plate-fluid interfacial tensions at equilibrium states are predicted consequently. The influences of association energy, fluid-solid interaction, and pore width on phase equilibria and equilibrium plate-fluid interfacial tensions are discussed.

A NEW TYPE OF SILICON-ON-INSULATOR WITH A PERFECT SURFACE SILICON LAYER

A novel silicon structure consisting of a silicon-on-defect layer (SODL), with enhanced surface Hall mobility in the surface layer on a buried defect layer (DL), has been discovered [J. Li, Nucl. Instr. and Meth. B59/60 (1991) 1053]. SODL material was formed by using proton implantation and subsequent two-step annealing. The implantation was carried out with a Varian 350D ion implanter. Based on the discovery, a standard measurement method (current-voltage curve method) was adopted to measure the true resistivity value of the DL in order to replace the spreading resistivity measurement by which the true resistivity in seriously defective silicon cannot be obtained. By adopting the current-voltage current method, the true resistivity value of the DL is measured to be 4.2 x 10(9) OMEGA cm. The SODL material was proved to be a silicon-on-insulator substrate.