Managing Information Risks in asset management - Experiences from an in-depth case study in the utility industry

Information is one of the most important resources in our globalized economy. The value of information often exceeds the value of physical assets. Information quality has, in many ways, an impact on asset management organisations and asset managers struggle to understand and to quantify it, which is a prerequisite for effective information quality improvement. Over the past few years, we have developed an innovative management concept that addresses these new asset management challenges: a process for Total Information Risk Management (TIRM), which has been already tested in a number of asset management industries. The TIRM process enables to manage information quality more effectively in asset management organisations as it focuses specifically on the risks that are imposed by information quality. In this paper, we show how we have applied the TIRM process in an in-depth study at a medium-sized European utility provider, the Manx Electricity Authority (MEA), at the Isle of Man.

Effect of buried depth and diameter on uplift of underground structures in liquefied soils

In an earthquake, underground structures located in liquefiable soil deposits are susceptible to floatation following an earthquake event due to their lower unit weight relative to the surrounding saturated soil. The uplift displacement of an underground structure in liquefiable soil deposit can be affected by the buried depth and size of the structure. Dynamic centrifuge tests have been carried out to investigate the influence of these factors by measuring the uplift displacement of shallow model circular structures. Ratios for the buried depth and diameter effects of the structure are introduced to compare the uplift displacement in different soil and earthquake conditions. With the depth effect and diameter effect ratios, the uplift displacement of a buoyant structure in liquefiable soil can also be estimated based on performance of similar structures in comparable soil condition and subjected to a similar earthquake event. © 2012 Elsevier Ltd.

Innovative Stereo Vision-Based Approach to Generate Dense Depth Map of Transportation Infrastructure

Three-dimensional (3-D) spatial data of a transportation infrastructure contain useful information for civil engineering applications, including as-built documentation, on-site safety enhancements, and progress monitoring. Several techniques have been developed for acquiring 3-D point coordinates of infrastructure, such as laser scanning. Although the method yields accurate results, the high device costs and human effort required render the process infeasible for generic applications in the construction industry. A quick and reliable approach, which is based on the principles of stereo vision, is proposed for generating a depth map of an infrastructure. Initially, two images are captured by two similar stereo cameras at the scene of the infrastructure. A Harris feature detector is used to extract feature points from the first view, and an innovative adaptive window-matching technique is used to compute feature point correspondences in the second view. A robust algorithm computes the nonfeature point correspondences. Thus, the correspondences of all the points in the scene are obtained. After all correspondences have been obtained, the geometric principles of stereo vision are used to generate a dense depth map of the scene. The proposed algorithm has been tested on several data sets, and results illustrate its potential for stereo correspondence and depth map generation.

Testing of Depth-Encoded Hough Voting for Infrastructure Object Detection

The lack of viable methods to map and label existing infrastructure is one of the engineering grand challenges for the 21st century. For instance, over two thirds of the effort needed to geometrically model even simple infrastructure is spent on manually converting a cloud of points to a 3D model. The result is that few facilities today have a complete record of as-built information and that as-built models are not produced for the vast majority of new construction and retrofit projects. This leads to rework and design changes that can cost up to 10% of the installed costs. Automatically detecting building components could address this challenge. However, existing methods for detecting building components are not view and scale-invariant, or have only been validated in restricted scenarios that require a priori knowledge without considering occlusions. This leads to their constrained applicability in complex civil infrastructure scenes. In this paper, we test a pose-invariant method of labeling existing infrastructure. This method simultaneously detects objects and estimates their poses. It takes advantage of a recent novel formulation for object detection and customizes it to generic civil infrastructure scenes. Our preliminary experiments demonstrate that this method achieves convincing recognition results.

Innovative Stereo Vision-Based Approach to Generate Dense Depth Map of Transportation Infrastructure

Three-dimensional (3-D) spatial data of a transportation infrastructure contain useful information for civil engineering applications, including as-built documentation, on-site safety enhancements, and progress monitoring. Several techniques have been developed for acquiring 3-D point coordinates of infrastructure, such as laser scanning. Although the method yields accurate results, the high device costs and human effort required render the process infeasible for generic applications in the construction industry. A quick and reliable approach, which is based on the principles of stereo vision, is proposed for generating a depth map of an infrastructure. Initially, two images are captured by two similar stereo cameras at the scene of the infrastructure. A Harris feature detector is used to extract feature points from the first view, and an innovative adaptive window-matching technique is used to compute feature point correspondences in the second view. A robust algorithm computes the nonfeature point correspondences. Thus, the correspondences of all the points in the scene are obtained. After all correspondences have been obtained, the geometric principles of stereo vision are used to generate a dense depth map of the scene. The proposed algorithm has been tested on several data sets, and results illustrate its potential for stereo correspondence and depth map generation.

Augmenting depth camera output using photometric stereo

We present a system for augmenting depth camera output using multispectral photometric stereo. The technique is demonstrated using a Kinect sensor and is able to produce geometry independently for each frame. Improved reconstruction is demonstrated using the Kinect's inbuilt RGB camera and further improvements are achieved by introducing an additional high resolution camera. As well as qualitative improvements in reconstruction a quantitative reduction in temporal noise is shown. As part of the system an approach is presented for relaxing the assumption of multispectral photometric stereo that scenes are of constant chromaticity to the assumption that scenes contain multiple piecewise constant chromaticities.

Design of quantum cascade microcavity lasers based on Q factor versus etching depth

The choice of the etching depth for semiconductor microcavities is a compromise between a high Q factor and a difficult technique in a practical fabricating process. In this paper, the influences of the etching depth on mode Q factors for mid-infrared quantum cascade microcylinder and microsquare lasers around 4.8 and 7.8 mu m are simulated by three-dimensional (3D) finite-difference time-domain (FDTD) techniques. For the microcylinder and the microsquare resonators, the mode Q factors of the whispering-gallery modes (WGMs) increase exponentially and linearly with the increase in the etching depth, respectively Furthermore, the mode Q factors of some higher order transverse WGMs may be larger than that of the fundamental transverse WGM in 3D microsquares. Based on the field distribution of the vertical multilayer slab waveguide and the mode Q factors versus the etching depth, the necessary etching depth is chosen at the position where the field amplitude is 1% of the peak value of the slab waveguide. In addition, the influences of sidewall roughness on the mode Q factors are simulated for microsquare resonators by 2D FDTD simulation. (C) 2009 Optical Society of America

Depth dependent elastic strain in ZnO epilayer: combined Rutherford backscattering/channeling and X-ray diffraction

A ZnO layer was grown by metalorganic chemical vapor deposition (MOCVD) on a sapphire (0 0 0 1) substrate. The perpendicular and parallel elastic strain of the ZnO epilayer, e(perpendicular to) = 0.19%, e(parallel to) = -0.29%, respectively, were derived by using the combination of Rutherford backscattering (RBS)/channeling and X-ray diffraction (XRD). The ratio vertical bar e(parallel to)/ e(perpendicular to)vertical bar = 1.5 indicates that ZnO layer is much stiffer in the a-axis direction than in the c-axis direction. By using RBS/C, the depth dependent elastic strain was deduced. The strain is higher at the depth close to the interface and decreases towards the surface. The negative tetragonal distortion was explained by considering the lattice mismatch and thermal mismatch in ZnO thin film. (c) 2004 Elsevier B.V. All rights reserved.

Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling

The depth distribution of the strain-related tetragonal distortion e(T) in the GaN epilayer with low-temperature AlN interlayer (LT-AlN IL) on Si(111) substrate is investigated by Rutherford backscattering and channeling. The samples with the LT-AlN IL of 8 and 16 nm thickness are studied, which are also compared with the sample without the LT-AlN IL. For the sample with 16-nm-thick LT-AlN IL, it is found that there exists a step-down of e(T) of about 0.1% in the strain distribution. Meanwhile, the angular scan around the normal GaN <0001> axis shows a tilt difference about 0.01degrees between the two parts of GaN separated by the LT-AlN IL, which means that these two GaN layers are partially decoupled by the AlN interlayer. However, for the sample with 8-nm-thick LT-AlN IL, neither step-down of e(T) nor the decoupling phenomenon is found. The 0.01degrees decoupled angle in the sample with 16-nm-thick LT-AlN IL confirms the relaxation of the LT-AlN IL. Thus the step-down of e(T) should result from the compressive strain compensation brought by the relaxed AlN interlayer. It is concluded that the strain compensation effect will occur only when the thickness of the LT-AlN IL is beyond a critical thickness. (C) 2004 American Institute of Physics.

Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition

Rutherford backscattering and channeling is combined with X-ray diffraction to study the depth dependence of crystalline quality in InN layers grown by metalorganic chemical vapor deposition on sapphire substrate. The poorest crystalline quality in InN layer is produced at the intermediate region over 100 nm away from the InN/sapphire interface. With increasing layer thickness the crystalline quality improves to a certain degree dependent on the growth temperature. The InN sample grown at 450 degrees C is found to be more homogeneous than the sample grown at 550 degrees C. The difference in the defect profile is explained by the temperature-dependent growth modes. The inhomogeneity of structural quality and related properties such as carrier concentration and strain field is possibly the reason to observe a high energy wing in PL spectrum of the InN sample grown at 550 degrees C. (c) 2006 Elsevier B.V All rights reserved.

XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells

Detailed X-ray photoelectron spectroscopy (XPS) depth profiling measurements were performed across the back n-layer/transparent conducting oxide (n/TCO) inter-faces for superstrate p-i-n solar cells to examine differences between amorphous silicon (a-Si:H) and microcrystalline silicon (mu c-Si:H) n-layer materials as well as TCO materials ZnO and ITO in the chemical, microstructural and diffusion properties of the back interfaces. No chemical reduction of TCO was found for all variations of n-layer/TCO interfaces. We found that n-a-Si:H interfaces better with ITO, while n-mu c-Si:H, with ZnO. A cross-comparison shows that the n-a-Si:H/ITO interface is superior to the n-mu c-Si:H/ZnO interface, as evidenced by the absence of oxygen segregation and less oxidized Si atoms observed near the interface together with much less diffusion of TCO into the n-layer. The results suggest that the n/TCO interface properties are correlated with the characteristics of both the n-layer and the TCO layer. Combined with the results reported on the device performance using similar back n/TCO contacts, we found the overall device performance may depend on both interface and bulk effects related to the back n/TCO contacts. (c) 2006 Elsevier B.V. All rights reserved.

Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling

Rutherford backscattering and channeling have been used to characterize the structure of a GaN layer grown on a Si(111) substrate. The results show that a 1.26 mum GaN epitaxial layer with a rather abrupt interface and a good crystalline quality (chi(min)=3.4%) can be grown on a Si(111) substrate. Using the channeling angular scan around an off-normal <1 (2) over bar 13> axis in the {10 (1) over bar0} plane of the GaN layer, the tetragonal distortion e(T), which is caused by the elastic strain in the epilayer, can be determined. Moreover, the depth dependence of the e(T) can be obtained using this technique. A fully relaxed (e(T)=0) GaN layer for a thickness <2.8 mum is expected. (C) 2002 American Institute of Physics.

Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

An anomalous behavior was observed in X-ray photoelectron Spectroscopy (XPS) depth profile measurements conducted on CeO2/Si epilayers grown by ion beam epitaxy (IBE): the signals of Ce3+ and Ce4+ co-exist, and the ratio between them increases during the etching time and then tends to maintain a constant level before increasing again. The results of X-ray Diffraction (XRD), Auger Electron Spectroscopy (AES), and Rutherford Back-Scattering (RES) measurements proved that the reduction chemical reaction of CeO2 is induced by ion-etching. (C) 1998 Elsevier Science Ltd. All rights reserved.