Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure

The results of conductivity, photoconductivity and constant photocurrent method absorption measurements by DC and AC methods in hydrogenated silicon films with mixed amorphous-nanocrystalline structure are presented. A series of diphasic silicon films was deposited by very high frequency plasma enhanced chemical vapor deposition technique, using different hydrogen dilution ratios of silane. The increase of hydrogen dilution ratio results in five orders of magnitude increase of conductivity and a sharp increase of grain volume fraction. The comparison of the absorption spectra obtained by DC and AC methods showed that they are similar for silicon films with the predominantly amorphous structure and films with high grain volume fraction. However we found a dramatic discrepancy between the absorption spectra obtained by DC and AC constant photocurrent methods in silicon films deposited in the regime of the structure transition from amorphous to nanocrystalline state. AC constant photocurrent method gives higher absorption coefficient than DC constant photocurrent method in the photon energy range of 1.2-1.7 eV. This result indicates the possibility of crystalline grains contribution to absorption spectra measured by AC constant photocurrent method in silicon films with intermediate crystalline grain volume fraction. (c) 2008 Published by Elsevier B.V.

Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage

CaCu3Ti(4-x)Nb(x)O(12) (x = 0, 0.01, 0.08, 0.2) ceramics were fabricated by a conventional solid-state reaction method. The ceramics showed the body-centered cubic structure without any foreign phases and the grain size decreases with Nb doping. Two Debye-type relaxations were observed for the Nb-doped samples at low frequency and high frequency, respectively. The complex electric modulus analysis revealed that the surface layer, grains and grain boundaries contributed to the dielectric constant. The low-frequency dielectric constant relative to the surface layer decreased to a minimum and then increased with the dc bias voltage at 100 Hz, which were well explained in terms of a model containing two metal oxide semiconductors in series, confirming the surface layer in the ceramics. The shift voltage V-B corresponding to the minimal capacitance increased with increase of the composition x. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A voltage-adjustable three-phase rectifier with constant power flow

An three phase adjustable output voltage rectifier with constant power flow based on waveform gap patching principle is resented. By patching the gapes in the phase currents in parallel way as well as the ripple of the output voltage in series way, it implements the constant power flow from the three-phase line to the DC output without using any line frequency (and its harmonics) energy storage components. Principally, by treating only 22.4% power of the needed power output, this rectifier can supply constant power flow with adjustable output voltages without bring about any harmonic interferences to the power utility and achieve unite power factor.

A NEW METHOD FOR MEASURING THE EFFECTIVE DIFFUSION CONSTANT OF 2-DIMENSIONAL ELECTRONS IN THE PRESENCE OF MAGNETIC-FIELDS

The transient charge response Q(t) of a two-dimensional electron gas (2DEG) in GaAs/AlxGa1-xAs heterostructures to a small pulse of the gate voltage, applied between the top gate and source electrodes in a Corbino structure, was employed to directly measure the effective diffusion constant of a 2DEG in the quantum Hall regime. The measured diffusion constant D showed a drastic change as the magnetic field was swept through the integer fillings of the Landau levels.

SHEAR-DEFORMATION-POTENTIAL CONSTANT OF THE CONDUCTION-BAND MINIMA OF SI - EXPERIMENTAL-DETERMINATION BY THE DEEP-LEVEL CAPACITANCE TRANSIENT METHOD

The shear-deformation-potential constant XI-u of the conduction-band minima of Si has been measured by a method which we called deep-level capacitance transient under uniaxial stress. The uniaxial-stress (F) dependence of the electron emission rate e(n) from deep levels to the split conduction-band minima of Si has been analyzed. Theoretical curves are in good agreement with experimental data for the S0 and S+ deep levels in Si. The values of XI-u obtained by the method are 11.1 +/- 0.3 eV at 148.9 K and 11.3 +/- 0.3 eV at 223.6 K. The analysis and the XI-u values obtained are also valuable for symmetry determination of deep electron traps in Si.

Modulation of Photonic Bandgap and Localized States by Dielectric Constant Contrast and Filling Factor in Photonic Crystals

The band structure of 2D photonic crystals (PCs) and localized states resulting from defects are analyzed by finite-difference time-domain (FDTD) technique and Pade approximation. The effect of dielectric constant contrast and filling factor on photonic bandgap (PBG) for perfect PCs and localized states in PCs with point defects are investigated. The resonant frequencies and quality factors are calculated for PCs with different defects. The numerical results show that it is possible to modulate the location, width and number of PBGs and frequencies of the localized states only by changing the dielectric constant contrast and filling factor.

Dynamic behaviors of mode III interfacial crack under a constant loading rate

In an earlier study on intersonic crack propagation, Gao et al. (J. Mech. Phys. Solids 49: 2113-2132, 2001) described molecular dynamics simulations and continuum analysis of the dynamic behaviors of a mode II dominated crack moving along a weak plane under a constant loading rate. The crack was observed to initiate its motion at a critical time after the onset of loading, at which it is rapidly accelerated to the Rayleigh wave speed and propagates at this speed for a finite time interval until an intersonic daughter crack is nucleated at a peak stress at a finite distance ahead of the original crack tip. The present article aims to analyze this behavior for a mode III crack moving along a bi-material interface subject to a constant loading rate. We begin with a crack in an initially stress-free bi-material subject to a steadily increasing stress. The crack initiates its motion at a critical time governed by the Griffith criterion. After crack initiation, two scenarios of crack propagation are investigated: the first one is that the crack moves at a constant subsonic velocity; the second one is that the crack moves at the lower shear wave speed of the two materials. In the first scenario, the shear stress ahead of the crack tip is singular with exponent -1/2, as expected; in the second scenario, the stress singularity vanishes but a peak stress is found to emerge at a distance ahead of the moving crack tip. In the latter case, a daughter crack supersonic with respect to the softer medium can be expected to emerge ahead of the initial crack once the peak stress reaches the cohesive strength of the interface.

Four-dimensional Newton's constant in brane world with a sloping extra dimension

We show the four-dimensional Newton's constant obtained naturally from five-dimensional brane world with a tinily sloping extra dimension, which is independent of the bulk Weyl tensor. The corresponding universe is stiff fluid dominated when the slope of extra dimension is very small. Otherwise, the universe may be undergoing a self-acceleration at present epoch and have a decelerated phase in very recent past.

Detection of K-ras exon 1 mutations by constant denaturant capillary electrophoresis

Among various mutation detection methods, constant denaturant capillary electrophoresis (CDCE) is one of the most common techniques for rapid identification of known or unknown mutations. In this report, a CDCE analysis method with homemade linear polyacrylamide (LPA) kit was developed on ABI 310 genetic analyzer, the effect and relationship of various denaturing factors in CDCE analysis were investigated and K-ras gene mutations of 31 coloerctal cancer patients were detected. Results indicate that, with the increase of chemical danaturant concentration, the optimum temperature was lowered, and when the concentration of urea (formamide) was higher than 7 M (40%), the homoduplex and heteroduplex of mutant samples were separated with difficulty. Detection results of K-ras gene in colorectal samples indicated that mutations were present in eight (26%) of 31 patients; most mutations were localized in codon 12, which is thought to be a critical step and plays an important role in human colorectal carcinogenesisas. Copyright (C) 2004 John Wiley Sons, Ltd.

Rhythmic Growth-Induced Ring-Banded Spherulites with Radial Periodic Variation of Thicknesses Grown from Poly(epsilon-caprolactone) Solution with Constant Concentration

Birefringent ring-banded spherulites with radial periodic variation of thicknesses were grown from poly(epsilon-caprolactone) (PCL) solutions under conditions for which the Solution concentration was held constant during the whole development of the morphology. The as-grown ring-banded spherulites were investigated by optical (OM) and atomic force (AFM) microscopies, by transmission electron microscopy (TEM) of samples sectioned parallel to the plane of film, and also by electron diffraction (ED) and grazing incidence X-ray diffraction (GIXD) techniques.

Mass transfer kinetics of neodymium(III) extraction by calix[4]arene carboxylic acid using a constant interfacial area cell with laminar flow

BACKGROUND: Thermodynamics and kinetics data are both important to explain the extraction property. In order to develop a novel separation technology superior to current extraction systems, many promising extractants have been developed including calixarene carboxylic acids. The extraction thermodynamics behavior of calix[4]arene carboxylic acids has been reported extensively. In this study, the mass transfer kinetics of neodymium(III) and the interfacial behavior of calix[4]arene carboxylic acid were investigated.