984 resultados para Jennings, Al, b. 1863.
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Paged continuously.
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Mode of access: Internet.
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Vol. 3 published by Bowes & Bowes, 1913.
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Mode of access: Internet.
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Films of amorphous silicon (a-Si) were prepared by r.f. sputtering in a Ne plasma without the addition of hydrogen or a halogen. The d.c. dark electrical conductivity, he optical gap and the photoconductivity of the films were investigated for a range of preparation conditions, the sputtering gas pressure, P, the target-substrate spacing, d, the self-bias voltage, Vsb, on the target and the substrate temperature, Ts. The dependence of the electrical and optical properties on these conditions showed that various combinations of P, d and Vsb, at a constant Ts, giving the same product (Pd/V sb) result in films with similar properties, provided that P, d and Vsb remain vithin a certain range. Variation of Pd/Vsb between about 0.2 and 0.8 rrTorr.cm!V varied the dark conductivity over about 4 orders of magnitude, the optical gap by 0.5 eV and the photoconductivity over 4-5 orders of magnitude. This is attributed to controlling the density-of-states distribution in the mobility gap. The temperature-dependence of photoconductivity and the photoresponse of undoped films are in support of this conclusion. Films prepared at relatively high (Pd/Vsb) values and Ts=300 ºc: exhibited low dark-conductivity and high thermal activation energy, optical gap and photoresponse, characteristic properties of a 'low density-of-states material. P-type doping with group-Ill elements (Al, B and Ga) by sputtering from a composite target or from a predoped target (B-.doped) was investigated. The systematic variation of room-temperature conductivity over many orders of magnitude and a Fermi-level shift of about 0.7 eV towards the valence-band edge suggest that substitutional doping had taken place. The effects of preparation conditions on doping efficiency were also investigated. The post-deposition annealing of undoped and doped films were studied for a temperature range from 250 ºC to 470 ºC. It was shown that annealing enhanced the doping efficiency considerably, although it had little effect on the basic material (a-Si) prepared at the optimum conditions (Pd/Vsb=0.8 mTorr.cm/V and Ts=300 $ºC). Preliminary experiments on devices imply potential applications of the present material, such as p-n and MS junctions.
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Bibliography: p.431-452.
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Ghārdūn.
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Title from f. 1r.
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1- al-Durrah al-zāhirah bi-taḍmīn al-Burʼah al-fājirah / lil-Shaykh Qāsim (printed text, paginated 1-15; ff. 1r-8r) -- 2. Afḍal al-zād li-yawm al-maʻād fī al-ṣalāh wa-al-salām ʻalá khayr al-ʻibd (ff. 9r-28v) -- 3. On miracles of the Prophet (ff. 29r-32r) -- 4. Commentary on a verse from the Qurʼān (ff. 32v-34v) -- 5. Hādhihi Qaṣīdat Sayyidinā Muḥammad [A poem in praise of the Prophet] (f. 35r) -- 6. Hādhā Mawlid Sayyid al-awwalīn wa-al-ākhirīn Muḥammad ibn ʻAbd Allāh ibn ʻAbd al-Muṭṭalib, 25 Rabʻ al-Awwal 1274 AH [November 12, 1857 AD] (ff. 36r-40v).
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Caption title.
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Microfilm.
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Richly elegant copy of the Dīvān of the masterful poet Ḥāfiẓ (Khvājah Shams al-Dīn Muḥammad Shīrāzī, d.1390?).
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Page 57 of the "American Jewish Cavalcade" scrapbook of Leo Baeck in New York found in ROS 10 Folder 3