Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

A detailed characterisation study of GaN thin films grown by rf-plasma molecular beam epitaxy on intermediate-temperature buffer layers (ITBL) was carried out with Hall, photoluminescence (PL) and deep-level transient Fourier spectroscopy (DLTFS) techniques. The unique feature of our GaN thin films is that the GaN epitaxial layers are grown on top of a double layer that consists of an ITBL, which is grown at 690 degreesC, and a conventional low-temperature buffer layer deposited at 500 degreesC. It is observed that the electron mobility increases steadily with the thickness of the ITBL, which peaks at 377 cm(2)V(-1)S(-1) for an ITBL thickness of 800 nm. The PL also demonstrated systematic improvements with the thickness of the ITBL. The DLTFS results suggest a three-order-of-magnitude reduction in the deep level at E-c-0.40 eV in the device fabricated with the GaN films grown on an ITBL thickness of 1.25 mum in comparison with the control device without an ITBL. Our analyses indicate that the utilization of an ITBL in addition to the conventional low-temperature buffer layer leads to the relaxation of residual strain within the material, resulting in an improvement in the optoelectronic properties of the films. (C) 2002 Elsevier Science BN. All rights reserved.

Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer

Wurtzite GaN films have been grown on (001) Si substrates using gamma-Al2O3 as an intermediate layer by low pressure (similar to 76 Torr) metalorganic chemical vapor deposition. Reflection high energy electron diffraction and double crystal x-ray diffraction measurements revealed that the thin gamma-Al2O3 layer of "compliant" character was an effective intermediate layer for the GaN film grown epitaxially on Si. The narrowest linewidth of the x-ray rocking curve for (0002) diffraction of the 1.3 mu m GaN sample was 54 arcmin. The orientation relationship of GaN/gamma-Al2O3/Si was (0001) GaN parallel to(001) gamma-Al2O3 parallel to(001) Si, [11-20] GaN parallel to[110] gamma-Al2O3 parallel to[110] Si. The photoluminescence measurement for GaN at room temperature exhibited a near band-edge peak of 365 nm (3.4 eV). (C) 1998 American Institute of Physics.

On equations for regular languages, finite automata, and sequential networks

We consider systems of equations of the form where A is the underlying alphabet, the Xi are variables, the Pi,a are boolean functions in the variables Xi, and each δi is either the empty word or the empty set. The symbols υ and denote concatenation and union of languages over A. We show that any such system has a unique solution which, moreover, is regular. These equations correspond to a type of automation, called boolean automation, which is a generalization of a nondeterministic automation. The equations are then used to determine the language accepted by a sequential network; they are obtainable directly from the network.

practical type checking of functions defined on context-free languages

A type checking method for the functional language LFC is presented. A distinct feature of LFC is that it uses Context-Free (CF) languages as data types to represent compound data structures. This makes LFC a dynamically typed language. To improve efficiency, a practical type checking method is presented, which consists of both static and dynamic type checking. Although the inclusion relation of CF.languages is not decidable,a special subset of the relation is decidable, i.e., the sentential form relation, which can be statically checked.Moreover, most of the expressions in actual LFC programs appear to satisfy this relation according to the statistic data of experiments. So, despite that the static type checking is not complete, it undertakes most of the type checking task. Consequently the run-time efficiency is effectively improved. Another feature of the type checking is that it converts the expressions with implicit structures to structured representation. Structure reconstruction technique is presented.

pattern matching compilation of functions defined in context-free languages

LFC is a functional language based on recursive functions defined in context-free languages. In this paper, a new pattern matching algorithm for LFC is presented, which can represent a sequence of patterns as an integer by an encoding method. It is a rather simple method and produces efficient case-expressions for pattern matching definitions of LFC. The algorithm can also be used for other functional languages, but for nested patterns it may become complicated and further studies are needed.

facilitating formal specification acquisition by using recursive functions on context-free languages

Although formal specification techniques are very useful in software development, the acquisition of formal specifications is a difficult task. This paper presents the formal specification language LFC, which is designed to facilitate the acquisition and validation of formal specifications. LFC uses context-free languages for syntactic aspect and relies on a new kind of recursive functions, i.e. recursive functions on context-free languages, for semantic aspect of specifications. Construction and validation of LFC specifications are machine-aided. The basic ideas behind LFC, the main aspects of LFC, and the use of LFC and illustrative examples are described.

on string languages generated by spiking neural p systems

We continue the study of spiking neural P systems by considering these computing devices as binary string generators: the set of spike trains of halting computations of a given system constitutes the language generated by that system. Although the "direct" generative capacity of spiking neural P systems is rather restricted (some very simple languages cannot be generated in this framework), regular languages are inverse-morphic images of languages of finite spiking neural P systems, and recursively enumerable languages are projections of inverse-morphic images of languages generated by spiking neural P systems.

Kinetic spectra of light-adaptation dark-adaptation and M-intermediate of BR-D96N

BR-D96N is a kind of genetically site-specific mutants of bacteriorhodopsin (BR) with obvious photochromic effect. Compared to the wild type BR, the lifetime of M state of BR-D96N is prolonged to several minutes so that the photochromic kinetics and the intermediates formation can be studied by the conventional spectra analysis. In the experiment, the absorption spectra of the sample at different time after light illumination are measured with spectrophotometer. By fitting and analyzing the variation of the spectra, we suppose that there are three main states in the, photochromic process, i.e., B state (light-adapted state), M state and D state (dark-adapted state). The absorption spectra of the B state, M state and D state are extracted from the experimental data based on this three-state model and the spectra at various time are fitted with the least-square method. So, the variations of population percentages of the M state, B state and D state are obtained and the M state and B state lifetimes are estimated. In another way, from the measurement of the absorption dynamics at 407 and 568 nm, the M state and B state lifetimes are also obtained by two exponential data fitting, which give coincident results with those of the spectra analysis. (C) 2003 Elsevier Science B.V. All rights reserved.

Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

Metal-semiconductor-metal (MSM) structures were fabricated by RF-plasma-assisted MBE using different buffer layer structures. One type of buffer structure consists of an AlN high-temperature buffer layer (HTBL) and a GaN intermediate temperature buffer layer (ITBL), another buffer structure consists of just a single A IN HTBL. Systematic measurements in the flicker noise and deep level transient Fourier spectroscopy (DLTFS) measurements were used to characterize the defect properties in the films. Both the noise and DLTFS measurements indicate improved properties for devices fabricated with the use of ITBL and is attributed to the relaxation of residue strain in the epitaxial layer during growth process. (C) 2003 Elsevier Ltd. All rights reserved.