852 resultados para Holographic phase shift


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We have studied numerically and experimentally the magnetic flux penetration in high-Tc superconducting tube subjected to a uniform magnetic field parallel to its long axis. This study is carried in view of designing low-frequency magnetic shields by exploiting the diamagnetic properties of high-Tc superconducting ceramics. We have measured the field attenuation for applied magnetic fields in the frequency range 5 mHz-0.1 Hz by Hall probe measurements and at audio frequencies using a sensing coil. A simple 1D analysis using the Kim critical state model was found to be able to reproduce the experimental data satisfactorily. We have also determined the phase shift between the internal and the applied field both experimentally and numerically. Finally, we have studied the sweep rate dependence of the magnetic shielding properties, using data recorded either at several constant sweep rates dB /dt or at several AC fields of various amplitudes and frequencies. Both methods agree with each other and lead to a n-value of the E ∼ Jn law equal to ∼40 at 77 K. © 2009 IEEE.

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We investigated dynamics of the phytoplankton community and abiotic factors in Xiangxi Bay of the Three-Gorge Reservoir, China, by daily sampling, a specific site during a spring algal bloom (February 23-April 28, 2005). Among the 76 taxa observed, Asterionella formosa and Cyclotella spp. were the dominants, accounting for 47.2% and 29.9% of the total abundance, respectively. We determined the five distinct developing phases of the bloom by analyzing the dissimilarity of physicochemical parameters. Simultaneously, six phytoplankton community groups were distinguished by TWINSPAN classifications. The pattern for algal community succession was similar to that for the bloom phase shift, and the structural complexity of communities significantly decreased over time. Water temperature and silicate were the main factors that related to the development of the bloom and the shifts of the phytoplankton community.

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This paper examines the impact of two simple precoding schemes on the capacity of 3 × 3 MIMO-enabled radio-over-fiber (RoF) distributed antenna systems (DAS) with excess transmit antennas. Specifically, phase-shift-only transmit beamforming and antenna selection are compared. It is found that for two typical indoor propagation scenarios, both strategies offer double the capacity gain that non-precoding MIMO DAS offers over traditional MIMO collocated antenna systems (CAS), with capacity improvements of 3.2-4.2 bit/s/Hz. Further, antenna selection shows similar performance to phase-only beamforming, differing by <0.5% and offering median capacities of 94 bit/s/Hz and 82 bit/s/Hz in the two propagation scenarios respectively. Because optical DASs enable precise, centralized control of remote antennas, they are well suited for implementing these beamforming schemes. Antenna selection, in particular, is a simple and effective means of increasing MIMO DAS capacity. © 2013 IEEE.

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A new class of 16-ary Amplitude Phase Shift Keying (APSK) coded modulations deemed double-ring PSK modulations best suited for (satellite) nonlinear channels is proposed. Constellation parameters optimization has been based on geometric and information-theoretic considerations. Furthermore, pre- and post-compensation techniques to reduce the nonlinearity impact have been examined. Digital timing clock and carrier phase have been derived and analyzed for a Turbo coded version of the same new modulation scheme. Finally, the performance of state-of the art Turbo coded modulation for this new 16-ary digital modulation has been investigated and compared to the known TCM schemes. It is shown that for the same coding scheme, double-ring APSK modulation outperforms classical 16-QAM and 16-PSK over a typical satellite nonlinear channel due to its intrinsic robustness against the High Power Amplifier (HPA) nonlinear characteristics. The new modulation is shown to be power- and spectrally-efficient, with interesting applications to satellite communications. © 2002 by the American Institute of Aeronautics and Astronautics, Inc.

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Microsquare resonators laterally confined by SiO2/Au/air multilayer structure are investigated by light ray method with reflection phase-shift of the multiple layers and two-dimensional (2-D) finite-difference time-domain (FDTD) technique. The reflectivity and phase shift of the mode light ray on the sides of the square resonator with the semiconductor/SiO2/Au/air multilayer structure are calculated for TE and TM modes by transfer matrix method. Based on the reflection phase shift and the reflectivity, the mode wavelength and factor are calculated by the resonant condition and the mirror loss, which are in agreement well with that obtained by the FDTD simulation. We find that the mode factor increases greatly with the increase of the SiO2 layer thickness, especially as d < 0.3 mu m. For the square resonator with side length 2 mu m and refractive index 3.2, anticrossing mode couplings are found for confined TE modes at wavelength about 1.6 mu m at d = 0.11 mu m, and confined TM modes at d = 0.71 mu m, respectively.

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We propose a silicon ring-based optical modulation method to perform chirp-free optical modulations. In this scheme, we locate the light to be modulated at the resonance of the ring and tune the coupling coefficient between the ring and the straight waveguide by using a push-pull coupling structure. The chirp-free phase modulation can be achieved by varying the coupling coefficient in a large range, which can modify the coupling condition of the ring such that the input light experiences an abrupt phase shift of pi at the output. If the coupling coefficient is adjusted in a small range such that the coupling condition of the ring is kept unchanged, only the intensity of the light will be modulated. This leads to chirp-free intensity modulation. Our simulations performed at 10 Gbits/s confirm the feasibility of the proposal. (C) 2009 Optical Society of America

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Shubmkov-de Haas (SdH) measurements are performed over a temperature range of 1.5-20K in AL(0.22)Ga(0.78)N/GaN heterostructures with two subbands occupied. In addition to an intermodulation between two sets of SdH oscillations from the first and second subbands, a beating in oscillatory magnetoresistance at 12K is observed, due to the mixing of the first subband SdH oscillations and 'magnetointersubband' (MIS) oscillations. A phase shift of pi between the SdH and MIS oscillations is also clearly identified. Our experimental results, i.e. that the SdH oscillations dominate at low temperature and MIS oscillations dominate at high temperature, fully comply with the expected behaviour of MIS oscillations.

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Optical properties of Al0.9Ga0.1As/Al gamma Ga1-gamma As/GaAs/Al chi Ga1-chi As DBR with inhomogeneous graded interfaces has been investigated by using characteristic matrix method. The refractive index model and the analytic characteristic matrix of graded interfaces are obtained. The reflectance spectrum and the reflective phase shift are calculated for GaAs/Al-0.9 Ga-0.1 As DBR and graded interfaces DBR by using characteristic matrix method. The effect of graded interfaces on the optical properties of DBR is discussed. The result shows an extra graded phase matching layer must he added in front of the graded interfaces DBR to fulfil the conditions of phase matching at central wavelength. The accurate thickness of phase matching layer is calculated by optical thickness approximation method.

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Coherent transport through a quantum dot embedded in one arm of a double-slit-like Aharonov-Bohm (AB) ring is studied using the Green's function approach. We obtain experimental observations such as continuous phase shift along a single resonance peak and sharp inter-resonance phase drop. The AB oscillations of the differential conductance of the whole device are calculated by using the nonequilibrium Keldysh formalism. It is shown that the oscillating conductance has a continuous bias-voltage-dependent phase shift and is asymmetric in both linear and nonlinear response regimes.

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The effects of hydrogen dilution, subtle boron compensation, and light-soaking on the gap states of hydrogenated amorphous silicon films (a-Si:H) near and above the threshold of microcrystallinity have been investigated in detail by the constant photocurrent method and the improved phase-shift analysis of modulated photocurrent technique. It is shown that high hydrogen dilution near the threshold of microcrystallinity leads to a more ordered network structure and to the redistribution of gap states; it gives rise to a small peak at about 0.55 eV and a shoulder at about 1.2 eV below the conduction band edge, which are associated with the formation of microcrystallites embedded in the amorphous silicon host matrix. A concurrent subtle boron compensation is demonstrated to prevent excessive formation of microcrystallinity, and to help promote the growth of the ordered regions and reduce the density of gap defect states, particularly those associated with microcrystallites. Hydrogen-diluted and appropriately boron-compensated a-Si:H films deposited near the threshold of microcrystallinity show the lowest density of the defects in both the annealed and light-soaked states, and hence, the highest performance and stability. (C) 2001 American Institute of Physics.

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The simple reflection technique is usually used to measure the linear electro-optic (EO) coefficient (Pockels coefficient) in the development of EO polymer thin films. But there are some problems in some articles in the determination of the phase shift between the s and p light modes of a laser beam waveguided into the polymer film while a modulating voltage is applied across the electrodes, and different expressions for the linear EO coefficient measured have been given in these articles. In our research, more accurate expression of the linear EO coefficient was deduced by suitable considering the phase shift between the s and p light modes. The linear EO coefficients of several polymer thin films were measured by reflection technique, and the results of the Linear EO coefficient calculated by different expressions were compared. The limit of the simple reflection technique for measuring the linear EO coefficient of the polymer thin films was discussed.

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The novel design of a silicon optical switch on the mechanism of a reverse p-n junction is proposed. The figuration of contact regions at slab waveguides and the ion implantation technology for creation of junctions are employed in the new design. The two-layer rib structure is helpful for reduction of optical absorption losses induced by metal and heavily-doped contact. And more, simulation results show that the index modulation efficiency of Mach-Zehnder interferometer enhances as the concentrations of dopants in junctions increase, while the trade-off of absorption loss is less than 3 dB/mu m. The phase shift reaches about 5 x 10(-4) pi/mu m at a reverse bias of 10V with the response time of about 0.2ns. The preliminary experimental results are presented. The frequency bandwidth of modulation operation can arrive in the range of GHz. However, heavily-doped contacts have an important effect on pulse response of these switches. While the contact region is not heavily-doped, that means metal electrodes have schottky contacts with p-n junctions, the operation bandwidth of the switch is limited to about 1GHz. For faster response, the heavily-doped contacts must be considered in the design.

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Pressure sensitivity of the fiber optic mandrel hydrophone is analyzed in this paper. Based on the theory of elasticity, the mechanism of the pressure response is studied. The influence of the optical fiber on the compliant mandrel on the pressure response is taken into consideration for the first time. The radial deformation of the mandrel under the pressure of the fiber optic and the underwater pressure is analyzed in details. Based on the theory of photo-elasticity, the phase shift of the Mach-Zehnder interferometer is given. The pressure sensitivity is evaluated both theoretically and experimentally, and the results show a good correlation between the theoretical and experimental results.

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The time delay for light transmission in a coupled microring waveguide structure is calculated from the phase shift of the transmission coefficient obtained by Pade approximation with Baker's algorithm from FDTD Output. The results show that the Pade approximation is a powerful tool for saving time in FDTD simulation.

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Microcrystalline silicon films were deposited by very high frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD) with different hydrogen dilution. The microstructure of these films was investigated using Raman spectroscopy and infrared absorption (IR) spectra. The crystalline, amorphous, and grain boundary volume fractions X-c, X-a and X-gb were estimated from Raman measurements. An interface structure factor (R-if) is proposed to characterize the grain boundary volume fractions in IR spectroscopy. The density of states (DOS) of the microcrystalline crystalline silicon films were studied by phase-shift analysis of modulated photocurrent (MPC) and photoconductivity spectroscopy. It was observed that DOS increases with increasing grain boundary volume fractions, while the values of electron mobility-lifetime product mu T-e(e) disease.