Conditioned responses in the reticular formation

Unit activity was recorded from the midbrain and pons of 40 freely moving rats in an appetitive classical conditioning situation. Responses to auditory stimuli were observed from 100 units before and during a conditioning procedure in which presentation of food occurred 1 sec after the onset of the auditory stimulus. Conditioned unit responses (i.e., spike rate accelerations or decelerations) were considered to be positive when 1) no similar responses appeared prior to conditioning, and 2) latencies were equal to or less than those of sensory responses derived from the inferior colliculus. Such short latency conditioned unit responses were recorded from 11 probes located in the mid-lateral pert of the ventral region of the brain stem. This region was differentiated from paramedian, far lateral and dorsal parts of the brain stem reticular formation. Conditioned unit responses of considerably longer latencies were recorded from 76 probe located in these other regions. Among the longer latency responses interesting differences appeared in experiments conducted after the first conditioning series was completed. With additional training, units in the "reticular activating system" of midbrain and pons tended to yield stabilized responses in the early portion of the CS-US interval closely related in time to the orientation responses evoked by the CS. In contrast, the responses of units in the limbic midbrain tended to stabilize in the later part of the CS-US interval closely related in time to preparatory responses tied to the US. During extinction when the auditory stimulus was no longer followed by presentation of food, many of the responses were reduced to their pre-conditioning levels. However, there was a tendency for units which had displayed short latency responses on the first conditioning day to be more resistant to extinction than units which had displayed longer latency conditioned responses. The data were interpreted as indicating a local correlate of learning in the reticular formation of midbrain end pons and a separation of the midbrain system into at least two areas: 1) the classical "reticular activating system" related to orienting reactions, and 2) the limbic midbrain areas related to drives and rewards. Because the ventral and mid-lateral area with very short latency conditioned responses was not clearly tied to either of these; it was considered as possibly representing a third division.

Formation, thermal, optical and physical properties of GeS2-Ga2S3-AgCl novel chalcohalide glasses

Novel GeS2-Ga2S3-AgCl chalcohalide glasses had been prepared by melt-quenching technique, and the glass-forming region was determined by XRD, which indicated that the maximum of dissolvable AgCl was up to 65 mol%. Thermal and optical properties of the glasses were studied by differential scanning calorimetry (DSC) and Visible-IR transmission, which showed that most of GeS2-Ga2S3-AgCl glasses had strong glass-forming ability and broad region of transmission (about 0.45-12.5 mu m). With the addition of AgCl, the glass transition temperature, Tg decreases distinctly, and the short-wavelength cut-off edge (lambda(vis)) of the glasses also shifts to the long wavelength gradually. However, the glass-forming ability of the glass has a complicated evolutional trend depended on the compositional change. In addition, the values of the Vickers microhardness, H (v) , which decrease with the addition of AgCl, are high enough for the practical applications. These excellent properties of GeS2-Ga2S3-AgCl glasses make them potentially applied in the optoelectronic field, such as all-optical switch, etc.

Ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass produced by He+ ion implantation combined with Ar+ ion beam etching

This paper reports on the fabrication and characterization of a ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass. The He+ ion implantation (at energy of 2.8 MeV) is first applied onto the sample to produce a planar waveguide substrate, and then Ar+ ion beam etching (at energy of 500 eV) is carried out to construct rib stripes on the sample surface that has been deposited by a specially designed photoresist mask. According to a reconstructed refractive index profile of the waveguide cross section, the modal distribution of the waveguide is simulated by applying a computer code based on the beam propagation method, which shows reasonable agreement with the experimentally observed waveguide mode by using the end-face coupling method. Simulation of the incident He ions at 2.8 MeV penetrating into the Er3+/Yb3+ co-doped phosphate glass substrate is also performed to provide helpful information on waveguide formation.

TeO2-Nb2O5-YF3玻璃系统的形成区及性质研究

制备了一种新型的氧卤碲酸盐玻璃：TeO2-Nb2O5-YF3,给出并研究了TeO2-Nb2O5-YF3三元系统的玻璃形成范围。测试了玻璃的密度、折射率、差热(DTA)、拉曼光谱、红外透射光谱以及紫外吸收光谱,通过光谱分析研究了组分含量的变化对玻璃结构及红外透射特性的影响。实验结果表明,TeO2-Nb2O5-YF3玻璃系统具有优良的成玻璃性能和热稳定性等特性,而且在2.8～3.3 μm区域内无明显的[OH]基团吸收,在中红外3～5 μm区域具有优良透射性能,因此在中红外透射方面具有潜在应用价值。

Host dependent frequency upconversion of Er3+-doped oxyfluoride germanate glass

Er3+-doped oxyfluoride germanate glasses have been synthesized by the conventional melting and quenching method. The Judd-Ofelt intensity parameters were calculated based on the Judd-Ofelt theory and absorption spectra measurements. With the substitution of PbF2 for PbO, the Omega(2) parameter decreases, while the Omega(6) parameter increases. These change trends indicate that fluoride anions come to coordinate erbium cations and the covalency of the Er-O bond decreases. Structural and thermal stability properties were obtained by Raman spectra and differential thermal analysis, indicating that PbF2 plays an important role in the formation of glass network and has an important influence on the maximum phonon energy and thermal stability of host glasses. Intense green and red emissions centered at 525, 546, and 657 nm, corresponding to the transitions H-2(11/2) -> I-4(15/2), S-4(3/2) -> I-4(15/2), and F-4(9/2) -> I-4(15/2), respectively, were simultaneously observed at room temperature. With increasing PbF2 content, the intensity of red (657nm) emissions increases significantly, while that of the green (525 and 546nm) emission increases slightly. The results indicate that PbF, has more influence on the red (657nm) emission than the green (525 and 546nm) emissions in oxyfluoride germanate glasses. The possible upconversion luminescence mechanisms have also been estimated and discussed. (c) 2005 Elsevier B.V. All rights reserved.

Intense frequency upconversion fluorescence emission of Er3+/Yb3+-codoped oxychloride germanate glass

Structural and frequency upconversion fluorescence properties of Er3+/Yb3+-codoped oxychloride germanate glasses have been investigated. The Raman spectrum investigation indicates that PbCl2 plays an important role in the formation of glass network and has an important influence on the upconversion luminescence. Intense green and red emissions centered at 525, 546 and 657 nm, corresponding to the transitions H-2(11/2) -> I-4(15/2), S-4(3/2) -> I-4(15/2) and F-4(9/2) -> I-4(15/2), respectively, were observed at room temperature. The possible upconversion mechanism was also estimated and evaluated. Intense upconversion luminescence indicates that Er3+/Yb3+-codoped oxychloride germanate glass is a promising laser material. (c) 2005 Elsevier B.V. All rights reserved.

Intense upconversion luminescence in ytterbium-sensitized thulium-doped novel oxychloride bismuth-germanium glass

Structural and up-conversion fluorescence properties in ytterbium-sensitized thulium-doped novel oxychloride bismuth-germanium glass have been studied. The structure of novel bismuth-germanium glass was investigated by peak-deconvolution of Raman spectrum, and the structural information was obtained from the peak wave numbers. The Raman spectrum investigation indicates that PbCl2 plays an important role in the formation of glass network, and has an important influence on the up-conversion luminescence. Intense blue and weak red emissions centered at 477 and 650 mn, corresponding to the transitions 1G(4) -> H-3(6) and (1)G(4) -> H-3(4), respectively, were observed at room temperature. The possible up-conversion mechanisms are discussed and estimated. This novel oxychloride bismuth-germanium glass with low maximum phonon energy (similar to 730 cm(-1)) can be used as potential host material for up-conversion lasers. (c) 2005 Elsevier Ltd. All rights reserved.

Structural and upconversion fluorescence properties of Er3+/Yb3+-codoped oxychloride lead-germanium-bismuth glass

Structural and infrared-to-visible upconversion fluorescence properties of Er3+/Yb3+-codoped oxychloride lead-germanium-bismuth glass have been studied. The Raman spectrum investigation indicates that PbCl2 plays an important role in the formation of glass network, and has an important influence on the upconversion luminescence owing to lower phonon energy. Intense green and red emissions centered at 525, 546, and 657 nm, corresponding to the transitions H-2(11/2)-->I-4(15/2,) I-4(3/2)-->I-4(15/2), and F-4(9/2)-->I-4(15/2), respectively, were observed at room temperature. The quadratic dependence of the 525, 546, and 657 nm emissions on excitation power indicates that a two-photon absorption process occurs under 975 nm excitation. (C) 2004 Elsevier Ltd. All rights reserved.

Intense upconversion luminescence in ytterbium-sensitized thullum-doped oxychloride germanate glass

Structural and upconversion fluorescence properties in ytterbium-sensitized thulium-doped oxychloride germanate glass have been studied. The structure of oxychloride germanate glass was investigated by peak-deconvolution of Raman spectrum, and the structural information was obtained from the peak wavenumbers. The Raman spectrum investigation indicates that PbCl2 plays an important role in the formation of glass network, and has an important influence on the upconversion luminescence. Intense blue and weak red emissions centered at 477 and 650 nm, corresponding to the transitions (1)G(4) ->(3) H-6 and (1)G ->H-3(4), respectively, were observed at room temperature. The possible upconversion mechanisms are discussed and estimated. Intense upconversion luminescence indicates that oxychloride germanate glass can be used as potential host material for upconversion lasers. (c) 2004 Elsevier B.V. All rights reserved.

Resposta adaptativa e efeitos das substâncias oxidantes - K2TeO3, H2O2 e paraquate - na produção de biofilme de amostras de Corynebacterium diphtheriae isolados de origens diversas

A difteria é uma doença imunoprevinível que permanece endêmica em diversas regiões do mundo. Além dos casos de difteria clássica, doenças invasivas como endocardite, osteomielite, pneumonia e infecções relacionadas à cateter, tem acometido indivíduos adultos parcialmente imunizados. A natureza multifatorial dos fatores de virulência que favorecem a formação de biofilme e sobrevivência em macrófagos tem sido evidenciada para o Corynebacterium diphtheriae. Entretanto, escassos são os trabalhos que investigaram a influência de condições ambientais na virulência do patógeno. Uma vez que agentes oxidantes são capazes de gerar radicais livres e levar ao estresse oxidativo que, consequentemente, podem resultar em resposta adaptativa e influenciar na formação do biofilme e na virulência bacteriana, o presente trabalho teve como objetivo geral avaliar os efeitos do peróxido de hidrogênio (H2O2), paraquate e telurito de potássio (K2TeO3) em propriedades biológicas de cepas de C. diphtheriae de origens diversas. Os resultados demonstraram que as amostras de C. diphtheriae apresentaram níveis de resistência ao K2TeO3, H2O2 e paraquate, porém em intensidades variadas e independentes da capacidade de produção da toxina diftérica. Algumas amostras, toxinogênicas ou não, isoladas do trato respiratório superior demonstraram resposta adaptativa para H2O2 passando, portanto, a expressar resistência aumentada após uma prévia exposição ao referido agente oxidante. C. diphtheriae não exibiu respostas adaptativas para o K2TeO3 e paraquate. C. diphtheriae foi capaz de produzir biofilme na superfície de substratos abióticos de natureza hidrofílica (vidro) e hidrofóbica (poliestireno) na presença de agentes oxidantes K2TeO3, H2O2 e paraquate. A presença dos agentes oxidantes influenciou na formação de biofilme de algumas amostras. O paraquate inibiu a produção de biofilme de todas amostras. A amostra TR241 teve a produçao de biofilme inibida na presença dos três agentes oxidantes analisados. Por outro lado, a presença de H2O2 e do K2TeO3 estimulou a produção de biofilme de algumas amostras. Para todas as amostras de C. diphtheriae testadas, independentes das origens, biotipos e da capacidade de produção de toxina diftérica, os ensaios moleculares indicaram a presença de sequências gênicas cromossômicas homólogas, codificadores da proteína DIP 0906 (TeR) e da proteína DIP 1421 (OxyR), envolvidos na resistência ao telurito e na proteção contra o estresse oxidativo, respectivamente. Não foi observada correlação da suscetibilidade e a resposta adaptativa aos agentes oxidantes com as diferentes características bacterianas: origem, sítio de isolamento, produção de toxina diftérica, metabolização de sacarose e produção de biofilme. Em conclusão, o estresse oxidativo foi capaz de influenciar fatores de virulência do C. diphtheriae, como a capacidade de produçao de biofilme, que podem estar contribuindo para a patogenia da difteria clássica assim como de doenças invasivas causadas por cepas atoxinogênicas.

Formation of arrayed holes on metal foil and metal film by multibeam interfering femtosecond laser beams

We report on an optical interference method to fabricate arrayed holes on metal nickel foil and aluminum film deposited on glass substrate by means of five-beam interference of femtosecond laser pulses. Optical microscope and scanning electron microscope observations revealed that arrayed holes of micrometre-order were fabricated on both metal foil and metal film. The present technique allows one-step, large-area, micrometric processing of metal materials for potential industrial applications.

Nano-modification inside transparent materials by femtosecond laser single beam

Periodic nanostructures along the polarization direction of light are observed inside silica glasses and tellurium dioxide single crystal after irradiation by a focused single femtosecond laser beam. Backscattering electron images of the irradiated spot inside silica glass reveal a periodic structure of stripe-like regions of similar to 20 nm width with a low oxygen concentration. In the case of the tellurium dioxide single crystal, secondary electron images within the focal spot show the formation of a periodic structure of voids with 30 nm width. Oxygen defects in a silica glass and voids in a tellurium dioxide single crystal are aligned perpendicular to the laser polarization direction. These are the smallest nanostructures below the diffraction limit of light, which are formed inside transparent materials. The phenomenon is interpreted in terms of interference between the incident light field and the electric field of electron plasma wave generated in the bulk of material.

Complementary metal-oxide-semiconductor-compatible and self-aligned catalyst formation for carbon nanotube synthesis and interconnect fabrication

We have for the first time developed a self-aligned metal catalyst formation process using fully CMOS (complementary metal-oxide-semiconductor) compatible materials and techniques, for the synthesis of aligned carbon nanotubes (CNTs). By employing an electrically conductive cobalt disilicide (CoSi 2) layer as the starting material, a reactive ion etch (RIE) treatment and a hydrogen reduction step are used to transform the CoSi 2 surface into cobalt (Co) nanoparticles that are active to catalyze aligned CNT growth. Ohmic contacts between the conductive substrate and the CNTs are obtained. The process developed in this study can be applied to form metal nanoparticles in regions that cannot be patterned using conventional catalyst deposition methods, for example at the bottom of deep holes or on vertical surfaces. This catalyst formation method is crucially important for the fabrication of vertical and horizontal interconnect devices based on CNTs. © 2012 American Institute of Physics.

A gene cluster that regulates both heterocyst differentiation and pattern formation in Anabaena sp strain PCC 7120

Wild-type Anabaena sp. strain PCC 7120, a filamentous nitrogen-fixing cyanobacterium, produces single heterocysts at semi-regular intervals. asr0100 (patU5) and alr0101 (patU3) are homologous to the 5' and 3' portions of patU of Nostoc punctiforme. alr0099 (hetZ) overlaps the 5' end of patU5. hetZ, patU5 and patU3 were all upregulated, or expressed specifically, in proheterocysts and heterocysts. Mutants of hetZ showed delayed or no heterocyst differentiation. In contrast, a patU3 mutation produced a multiple contiguous heterocyst (Mch) phenotype and restored the formation of otherwise lost intercalary heterocysts in a patA background. Decreasing the expression of patU3 greatly increased the frequency of heterocysts in a mini-patS strain. Two promoter regions and two principal, corresponding transcripts were detected in the hetZ-patU5-patU3 region. Transcription of hetZ was upregulated in a hetZ mutant and downregulated in a patU3 mutant. When mutants hetZ::C.K2 and hetZ::Tn5-1087b were nitrogen-deprived, P-hetC-gfp was very weakly expressed, and in hetZ::Tn5-1087b, P-hetR-gfp was relatively strongly expressed in cells that had neither a regular pattern nor altered morphology. We conclude that the hetZ-patU5-patU3 cluster plays an important role in co-ordination of heterocyst differentiation and pattern formation. The presence of homologous clusters in filamentous genera without heterocysts is suggestive of a more general role.

Ni(Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation

Ni silicides used as contacts in source/drain and gate of advanced CMOS devices were analyzed by atom probe tomography (APT) at atomic scale. These measurements were performed on 45 nm nMOS after standard self-aligned silicide (salicide) process using Ni(5 at.% Pt) alloy. After the first annealing (RTA1), δ-Ni2Si was the only phase formed on gate and source/drain while, after the second annealing (RTA2), two different Ni silicides have been formed: NiSi on the gate and δ-Ni2Si on the source and drain. This difference between source/drain and gate regions in nMOS devices has been related to the Si substrate nature (poly or mono-crystalline) and to the size of the contact. In fact, NiSi seems to have difficulties to nucleate in the narrow source/drain contact on mono-crystalline Si. The results have been compared to analysis performed on 28 nm nMOS where the Pt concentration is higher (10 at.% Pt). In this case, θ-Ni2Si is the first phase to form after RTA1 and NiSi is then formed at the same time on source (or drain) and gate after RTA2. The absence of the formation of NiSi from δ-Ni 2Si/Si(1 0 0) interface compared to θ-Ni2Si/Si(1 0 0) interface could be related to the difference of the interface energies. The redistributions of As and Pt in different silicides and interfaces were measured and discussed. In particular, it has been evidenced that Pt redistributions obtained on both 45 and 28 nm MOS transistors correspond to respective Pt distributions measured on blanket wafers. © 2013 Elsevier B.V. All rights reserved.