提高能量密度的超衍射极限激光光束相位补偿技术

定义了激光光束衍射远场光斑压缩前后的能量比以及能量密度比来衡量超衍射极限激光光束的质量。通过利用反向传递算法设计了合适的补偿相位板，不但对准直放大的单一横模激光光束进行小于光学衍射极限的发散度的压缩，同时又保证光束能量集中于压缩后的远场衍射主瓣中，使压缩后的远场衍射光斑的能量密度增加。给出了相应的实例。这一结论不但解决了光学超分辨中光束压缩与能量损失不可避免这一矛盾，而且为发散度小且能量密度高的超衍射极限激光光束的实验工作以及该类光束的实际应用提供了理论基础。

圆孔受限波差高斯光束的远场近似及发散度分析

引入复高斯函数对衍射受限的圆孔进行了复高斯分解，得到了波差高斯光束远场衍射的近似解析式。在各种参量条件下，近似解析式所表示的衍射图样与严格的夫琅和费衍射积分的衍射图样完全一致，这表明用此解析式表征远场衍射是正确的。它的形式相对简单，为计算带来极大的方便。基于此，对有波差的高斯光束的远场发散度进行了深入的研究，检验了确定参量的光束随距离的改变而发散度不被改变的特性；同时，探讨了在圆孔限制下，发散度随高斯光束的束腰及波差的改变而变化的关系曲线，结果表明，这两个参量是影响发散度的主要因素。

Measurement of the wavefront of a laser diode system for intersatellite communication by a Jamin double-shearing interferometer

The frame of a laser diode transmitter for intersatellite communication is concisely introduced. A simple, novel and visual method for measuring the diffraction-limited wavefront of the transmitter by a Jamin double-shearing interferometer is proposed. To verify the validity of the measurement, the far-field divergence of beam is additionally rigorously analysed in terms of the Fraunhofer diffraction. The measurement, the necessary analyses and discussion are given in detail. By directly measuring the fringe widths and quantitatively interpreting the interference fringes, the minimum detectable wavefront height (DWH) of the wavefront is only 0.2 gimel (the distance between the perfect plane wavefront and the actual wavefront at the transmitting aperture) and the corresponding divergence is only 65.84 mu rad. This indicates that the wavefront approaches the diffraction-limited condition. The results show that this interferometer is a powerful tool for testing the semiconductor laser beam's wavefront, especially the diffraction-limited wavefront.

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.

相干模表示的部分相干高斯谢尔光束的相位空间积

与传统的相干激光光束的评价不同, 对部分相干光束质量进行评价时, 不仅要反映其远场发散特性, 而且还要能体现光源本身的部分相干性。根据部分相干光的相干模表示法, 推导了由部分相干光源所产生光束的相位空间积Q。与前人在相干光源情形下得到的结论相比, 得出的相位空简积Q不仅包含各个全相干模基元线性组合的贡献, 而且还有来自不同的全相干模基元之间相互作用的贡献。

Technique for diagnosing x-ray laser beam quality by use of the moire signal

We present what we believe is a novel technique based on the moire effect for fully diagnosing the beam quality of an x-ray laser. Using Fresnel diffraction theory, we investigated the intensity profile of the moire pattern when a general paraxial beam illuminates a pair of Ronchi gratings in the quasi-far field. Two formulas were derived to determine the beam quality factor M-2 and the effective radius of curvature R-e from the moire pattern. On the basis of the results, the far-field divergence, the waist location, and the radius can be calculated further. Finally, we verified the approach by use of numerical simulation. (C) 1999 Optical Society of America [S0740-3232(99)01502-1].

Effects of the frequency chirp on the fields of a chirped Gaussian pulse passing through a hard-edged aperture

Based on the Huygens-Fresnel diffraction integral and Fourier transform, propagation expression of a chirped Gaussian pulse passing through a hard-edged aperture is derived. Intensity distributions of the pulse with different frequency chirp in the near-field and far-field are analyzed in detail by numerical calculations. In the near-field, amplitudes of the intensity peaks generated by the modulation of the hard-edged aperture decrease with increasing the frequency chirp, which results in the improving of the beam uniformity. A physical explanation for the smoothing effect brought by increasing the frequency chirp is given. The smoothing effect is achieved not only in the pulse with Gaussian transverse profile but also in the pulse with Hermite-Gaussian transverse profile when the frequency chirp increases. (C) 2005 Elsevier B.V. All rights reserved.

Transverse intensity distributions of a broadband laser modulated by a hard-edged aperture

By means of the Huygens-Fresnel diffraction integral, the field representation of a laser beam modulated by a hard-edged aperture is derived. The near-field and far-field transverse intensity distributions of the beams with different bandwidths are analyzed by using the representation. The numerical calculation results indicate that the amplitudes and numbers of the intensity spikes decrease with increasing bandwidth, and beam smoothing is achieved when the bandwidth takes a certain value in the near field. In the far field, the radius of the transverse intensity distribution decreases as the bandwidth increases, and the physical explanation of this fact is also given. (c) 2005 Optical Society of America.

图像处理在光路自动准直系统中的应用

光路自动准直系统应用于惯性约束聚变的高功率激光装置中的光束自动调整。图像处理是光路自动准直的关键技术之一。针对神光Ⅲ原型装置，结合阈值化、重心法、中值滤波和圆拟合等多种不同的图像处理方法设计了一套合理的准直方案，并且在模拟实验平台上进行了实验验证。实验结果表明，光路自动准直系统能够在15min之内顺利完成光路的自动调整，光束近场调整精度优于近场光斑的±0．5％，光束远场调整精度≤±0．3″，满足了原型装置的总体要求。

Influence of the chirp on the intensity distributions of an apertured pulse

Starting from the Huygens-Fresnel diffraction integral and the Fourier transform, the propagation expression of a chirped pulse passing through a hard-edged aperture is derived. Using the obtained expression, the intensity distributions of the pulse with different chirp in the near and far fields are analyzed in detail. Due to the modulation of the aperture, many intensity peaks emerge in the intensity distributions of the chirped pulse in the near field. However, the amplitudes of the intensity peaks decrease on increasing the chirp, which results in the smoothing effect in the intensity distributions. The beam smoothing brought by increasing the chirp is explained physically. Also, it is found that the radius of the intensity distribution of the chirped pulse decreases when the chirp increases in the far field. (c) 2005 Elsevier GmbH. All rights reserved.

Fields of apertured polychromatic laser beams with Gaussian and Hermite-Gaussian transverse modes

Starting from the Huygens-Fresnel diffraction integral, the field expressions of apertured polychromatic laser beams with Gaussian and Hermite-Gaussian transverse modes are derived. Influence of the bandwidth on the intensity distributions of the laser beams is analyzed. It is found that when the bandwidth increases, the amplitudes and numbers of the intensity spikes decrease and beam uniformity is improved in the near field and the width of transverse intensity distribution of the apertured beams decreases in the far field. Thus, the smoothing and narrowing effects can be achieved by increasing the bandwidth. Also, these effects are found in the laser beams with Hermite-Gaussian transverse modes as the bandwidth increases.(c) 2006 Elsevier Ltd. All rights reserved.

阵列光栅压缩器的空域特性

引入角度偏差、位移偏差作为拼接光栅系统的物理参数，定义了拼接光栅的孔径函数，利用傅里叶角谱理论研究了高斯脉冲入射拼接光栅压缩器后的远场分布特性。研究表明；出射脉冲仍然是高斯型脉冲，但包络中心发生偏移，偏移量由角度偏差量和光束口径决定；位移偏差引入的相位随着拼接光栅压缩器传递，其对远场焦斑的影响，取决于每片子光栅的非整数倍光栅常数的横向位移偏差和纵向位移偏差的综合作用。通过数值计算得到了各维偏差对阵列光栅压缩器空域特性的影响，计算表明：光栅面外角度偏差（俯仰左右）和条纹平行度偏差都必须控制在1μrad以内，

四程放大自动准直系统数学模型研究

针对高功率激光装置四程放大系统的特点,利用矩阵光学原理,建立了四程放大准直系统的数学模型;基于此模型,设计了四程放大系统的准直调整方案;得出了近、远场偏移量与调整量关系的解析解.

高功率激光装置光束准直系统新型远场监测技术

利用高功率激光装置空间滤波器小孔成像和取样光栅的衍射,设计出一套新型光路远场监测方案,并且在实验平台上进行了实验验证.实验结果表明:相对传统的远场监测方法,该远场监测系统通过侧面离轴光栅取样灵活利用空间,其调整平均误差为空间滤波器小孔直径0.9%,能够满足准直系统远场调整精度(<小孔直径5%)的要求.

光谱色散后的相位调制光束衍射特性研究

用数值方法研究了激光驱动器系统中使用光谱色散平滑单元后光束的衍射特性、模拟结果表明，光谱色散会使光束衍射光斑变大，近场空间强度均匀性改善，而远场光斑内部存在光强接近于均匀分布的区域．进一步分析了光谱色散平滑单元中相位调制器的调制深度、调制频率及光栅色散系数等主要元件参数对光束传输特性的影响，发现在一定情况下光斑内部会出现较强的强度调制。