Study of multi-walled carbon nanotube structures fabricated by PMMA suspended dispersion

We report on the electrical characteristics of plasma enhanced chemical vapour deposition (PECVD)-grown, multi-walled carbon nanotube (MWCNT) devices made by a new fabrication method, PMMA suspended dispersion. This method makes it possible to suspend nanotubes between metal electrodes and to remove unwanted nanotubes from the substrate. The measurements show that the MWCNTs are metallic and able to maintain a current density ∼2×106 A/cm2 for more than 15 days with a maximum current density of ∼1.8×107 A/cm2. This high current density and reliability will make PECVD-grown MWCNTs applicable to field emission cathodes. © 2002 Elsevier Science B.V. All rights reserved.

Barium-Functionalized Multiwalled Carbon Nanotube Yarns As Low-Work-Function Thermionic Cathodes

Barium-functionalized multiwalled carbon nanotube yarns were fabricated by drawing and twisting multiwalled carbon nanotube forests through a solution containing barium nitrate. After heat activation under vacuum, the functionalized yarns were enriched in barium oxide due to the high surface-to-volume ratio of the nanotubes. The cathodes exhibited good thermionic properties, with a work function as low as 1.73-2.06 eV and thermionic current density that exceeded 185 mA/cm(2) in a field of 850 V/5 mm at 1317 K. The barium-functionalized yarns had high tensile strength of up to 420 MPa and retained strength of similar to 250 MPa after a 2 h activation process. (C) 2008 American Institute of Physics.

Explorations of electric-current system in solar active regions .1. Empirical inferences of the current flows

In this paper we explore techniques to identify sources of electric current systems and their channels of flow in solar active regions. Measured photospheric vector magnetic fields (VMF) together with high-resolution white-light and H filtergrams provide the data base to derive the current systems in the photosphere and chromosphere. Simple mathematical constructions of fields and currents are also adopted to understand these data. As an example, the techniques are then applied to infer current systems in AR 2372 in early April 1980. The main results are: (i) In unipolar sunspots the current density may reach values of 103 CGSE, and the Lorentz force on it can accelerate the Evershed flow, (ii) Spots exhibiting significant spiral pattrn in the penumbral filaments are the sources of vertical major currents at the photospheric surface, (iii) Magnetic neutral lines where the transverse field was strongly sheared were channels along which strong current system flows, (iv) The inferred current systems produced oppositely-flowing currents in the area of the delta configuration that was the site of flaring in AR 2372.

Critical current anisotropy in high temperature superconductors

After nearly 15 years of research effort, High Temperature Superconductors (HTS) are finding a wide range of practical applications. A clear understanding of the factors controlling the current carrying capacity of these materials is a prerequisite to their successful technological development. The critical current density (Jc) in HTS is directly dependent on the structure and pinning of the Flux Line Lattice (FLL) in these materials. This thesis presents an investigation of the Jc anisotropy in HTS. The use of thin films grown on off c-axis (vicinal) substrates allowed the effect of current directions outside the cuprate planes to be studied. With this experimental geometry Berghuis, et al. (Phys. Rev. Lett. 79, 12, pg. 2332) observed a striking flux channelling effect in vicinal YBa2Cu3O7-δ (YBCO) films. By confirming, and extending, this observation, it is demonstrated that this is an intrinsic effect. The results obtained, appear to fit well with the predictions of a field angle dependent cross-over from a three dimensional rectilinear FLL to a kinked lattice of strings and pancakes. The pinning force density for movement of strings inside the cuprate planes is considerably less than that on vortex pancake elements. When the FLL is entirely string-like this reduced pinning leads to the observed channelling minima. It is observed that anti-phase boundaries enhance the Jc in vicinal YBCO films by strongly pinning vortex strings. The effect on the FLL structure cross-over of increasing anisotropy has been elucidated using de-oxygenated vicinal YBCO films. Intriguingly, the counter intuitive prediction that the range of applied field angle for which the kinked lattice is fully developed reduces with increasing anisotropy, appears to be confirmed. Although vortex channelling cannot be observed in c-axis YBCO films, the pinning force density for vortex string channelling has been extracted by observing string dragging. By studying the effect of rotating the applied field at a constant angle to the cuprate planes, it is possible to observe the cross-over into the string pancake regime in c-axis films. In the 3D region, the observed behaviour is well explained by the anisotropic Ginzburg-Landau model. Measurements were also made on thin films of the much more anisotropic Bi 2Sr2CaCu2O8+x material, grown on vicinal substrates. The absence of any flux channelling effect and clear adherence to the expected Kes-Law behaviour in the observed Jc characteristics does not provide evidence for the existence of the predicted ‘crossing lattice’ in Bi 2Sr2CaCu2O8+x .

Space-charge-limited current in fast neutron irradiated silicon

DC and transient measurements of space-charge-limited currents through alloyed and symmetrical n^+ν n^+ structures made of nominally 75 kΩcm ν-type silicon are studied before and after the introduction of defects by 14 MeV neutron radiation. In the transient measurements, the current response to a large turn-on voltage step is analyzed. Right after the voltage step is applied, the current transient reaches a value which we shall call "initial current" value. At longer times, the transient current decays from the initial current value if traps are present.

Before the irradiation, the initial current density-voltage characteristics J(V) agree quantitatively with the theory of trap-free space-charge-limited current in solids. We obtain for the electron mobility a temperature dependence which indicates that scattering due to impurities is weak. This is expected for the high purity silicon used. The drift velocity-field relationships for electrons at room temperature and 77°K, derived from the initial current density-voltage characteristics, are shown to fit the relationships obtained with other methods by other workers. The transient current response for t > 0 remains practically constant at the initial value, thus indicating negligible trapping.

Measurement of the initial (trap-free) current density-voltage characteristics after the irradiation indicates that the drift velocity-field relationship of electrons in silicon is affected by the radiation only at low temperature in the low field range. The effect is not sufficiently pronounced to be readily analyzed and no formal description of it is offered. In the transient response after irradiation for t > 0, the current decays from its initial value, thus revealing the presence of traps. To study these traps, in addition to transient measurements, the DC current characteristics were measured and shown to follow the theory of trap-dominated space-charge-limited current in solids. This theory was applied to a model consisting of two discrete levels in the forbidden band gap. Calculations and experiments agreed and the capture cross-sections of the trapping levels were obtained. This is the first experimental case known to us through which the flow of space-charge-limited current is so simply representable.

These results demonstrate the sensitivity of space-charge-limited current flow as a tool to detect traps and changes in the drift velocity-field relationship of carriers caused by radiation. They also establish that devices based on the mode of space-charge-limited current flow will be affected considerably by any type of radiation capable of introducing traps. This point has generally been overlooked so far, but is obviously quite significant.

Avaliação da microestrutura, microdureza e resistência à corrosão de juntas soldadas de uma liga de Ni-Cr obtidas através de diferentes processos de soldagem

Este trabalho avaliou o comportamento eletroquímico do metal de base (MB) de uma liga a base de níquel-cromo em relação a juntas soldadas desta liga obtidas pelos processos de brasagem (BRA) e Tungsten Inert Gas (TIG), imersos em saliva artificial com pH 2,5 e 5,5. Foram também realizados ensaios de microdureza e caracterização microestrutural, por meio de microscopia óptica e eletrônica de varredura e análise química semi-quantitativa por EDS, nos grupos MB, TIG, BRA e no cordão de solda a laser (LAS). O MB apresentou uma matriz rica em níquel e cromo, distribuída em um arranjo dendrítico típico, apresentando inclusões metálicas de silício e titânio, além de porosidades. As soldas TIG e LAS revelaram uma microestrutura mais refinada que o MB, mostrando, entretanto, uma mesma composição química e distribuição de seus elementos. A solda BRA apresentou diferenças marcantes em sua microestrutura, composição química e distribuição de seus elementos em relação ao MB. Os dados de microdureza Vickers (HV), potencial de corrosão (Ecorr) e densidade de corrente de corrosão (jcorr) foram analisados com ANOVA e teste de Tukey (p<0,05). Para determinação da influência do pH quanto a resistência à corrosão dos grupos MB, TIG e BRA, empregou-se o teste t de Student (p<0,05). O MB apresentou menor média de microdureza (256,13 9,39 HV), seguido pelos grupos TIG (271,53 8,07 HV), LAS (303,73 13,93 HV) e BRA (551,99 37,73 HV). Em pH 2,5 as médias do Ecorr (mV) para o MB, TIG e BRA foram, respectivamente, -67,9 8,43, -52,78 16,74, e -284,33 19,04; e em pH 5,5, médias de -54,03 21,15, -62,08 20,16 e -278,8 28,96. Os valores médios de jcorr (A.cm-2) para o MB, TIG e BRA em pH 2,5 foram, respectivamente, 2,49 0,95, 5,584 1,64 e 27,45 4,9; e em pH 5,5, médias de 1,929 0,83, 4,267 1,51 e 54,2 11,96. Os grupos MB e TIG apresentaram boa resistência à corrosão, com maior módulo de impedância em relação ao grupo BRA. As diferenças no pH da saliva artificial não alteraram o comportamento corrosivo dos grupos MB e TIG. Entretanto, observou-se uma redução marcante na jcorr e no módulo de impedância nas soldas obtidas pelo processo de brasagem. O grupo BRA apresentou corrosão galvânica ao ser analisado formando par com o MB, mostrando uma jcorr de 5,3 A.cm-2. Entretanto, o mesmo não foi observado quando o MB foi associado à solda TIG, onde a jcorr foi cerca de 150 vezes menor. O grupo BRA, além de apresentar um comportamento eletroquímico muito diferente do MB, revelou diferenças marcantes quanto a composição química, aspecto microestrutural e microdureza. As juntas TIG e LAS mostraram semelhanças químicas e microestruturais em relação ao MB, sendo que na solda TIG esta semelhança foi ainda mais evidente. Além disto, a solda TIG apresentou um comportamento eletroquímico muito semelhante ao MB e, portanto, parecendo ser mais recomendável para soldar ligas odontológicas de níquel-cromo em relação aos demais processos de soldagem aqui avaliados.

Comportamento tribocorrosivo do aço inoxidável e de ligas de titânio em meio salino

No presente trabalho, foram realizados ensaios de tribocorrosão no aço inoxidável AISI 304L, no titânio comercialmente puro (CPTi) e na liga de titânio Ti6Al4V em solução aquosa de 0,90% m/v NaCl. Amostras de ligas de titânio com tratamento térmico superficial de refusão a laser também foram utilizadas. Um tribômetro do tipo pino-no-disco com contracorpo de alumina foi usado. Técnicas eletroquímicas in situ de monitoramento em circuito aberto, espectroscopia de impedância eletroquímica, curvas de polarização e amperimetria de resistência nula foram empregadas. Os resultados obtidos indicam que o desgaste tribocorrosivo das ligas de titânio é mais intenso do que o observado no aço inoxidável, apresentando perfis de superfície mais irregulares. A análise da impedância eletroquímica mostrou que todos os materiais utilizados apresentam uma rápida recuperação da camada passiva, exibindo módulos e fases um pouco menores do que os medidos antes do desgaste. Sob atrito, os diagramas de impedância apresentam uma forte redução do módulo. Sob desgaste, o expoente α do elemento de fase constante (CPE) atinge seu valor mais baixo, enquanto o parâmetro γ é máximo. As curvas de polarização exibem potenciais menores e densidades de corrente de corrosão maiores durante o desgaste. O tratamento de refusão a laser, embora mude a microestrutura e a dureza superficial das amostras, não indica uma mudança aparente nos parâmetros eletroquímicos sob tribocorrosão, bem como do coeficiente de atrito. Nos ensaios de amperimetria de resistência nula, foi possível estimar a corrente mensurada no ARN por meio do emprego de um circuito elétrico equivalente. A densidade espectral de potência dos sinais de potencial e de corrente exibe a frequência de rotação (1,25 Hz) e seus harmônicos. Para baixas frequências (abaixo de 10 mHz), o decaimento obedece à relação 1 ⁄ e 1⁄ para os sinais de potencial e corrente, respectivamente.

Carbon nanotube cathodes as electron sources for microwave amplifiers

Cold cathodes based on carbon nanotubes allow to produce a modulated electron beam. Using an array of vertically aligned CNs that exhibit an aspect ratio of about 200, we demonstrated the modulation of a high current density beam (∼ 1 A/cm2) at 1.5 and 32 GHz frequencies. Such CN cathodes are very promising for their use in a new generation of compact, highly efficient and low cost amplifiers that operate between 10 and 100 GHz. © 2007 IEEE.

Direct growth of horizontally aligned carbon nanotubes between electrodes and its application to field-effect transistors

This paper presents direct growth of horizontally aligned carbon nanotubes (CNTs) between two predefined various inter-spacing up to tens of microns of electrodes (pads) and its use as CNT field-effect transistors (CNT-FETs). The catalytic metals were prepared, consisting of iron (Fe), aluminum (Al) and platinum (Pt) triple layers, on the thermal silicon oxide substrate (Pt/Al/Fe/SiO2). Scanning electron microscopy measurements of CNT-FETs from the as-grown samples showed that over 80% of the nanotubes are grown across the catalytic electrodes. Moreover, the number of CNTs across the catalytic electrodes is roughly controllable by adjusting the growth condition. The Al, as the upper layer on Fe electrode, not only plays a role as a barrier to prevent vertical growth but also serves as a porous medium that helps in forming smaller nano-sized Fe particles which would be necessary for lateral growth of CNTs. Back-gate field effect transistors were demonstrated with the laterally aligned CNTs. The on/off ratios in all the measured devices are lower than 100 due to the drain leakage current. ©2010 IEEE.

Magnetic field and current distributins in melt-textured YBa 2Cu 3O 7-x with an artificial grain boundary

Using a magneto-optical (MO) technique, magnetic field distributions have been measured in a melt-textured YBa 2Cu 3O 7-x bulk superconductor, joined to form an artificial grain boundary (GB), in an external magnetic field perpendicular to the sample surface. The magnetic field at a weak section of the GB shows different values between the field increasing up to 150mT and decreasing down to 0T after zero-field-cooling. Namely, the magnetic field in increasing field is higher than that in decreasing field, even in the same external field. This result supports a model in which such differences in magnetic field at the weak-link GB give rise to the hysteresis behavior in the field dependence of transport critical current density in polycrystalline samples. The field distributions across a well-joined region of the GB behave similarly to the adjoining bulk material and this result indicates the possibility of creating useful artifacts provided that the strongly coupled sections can be reproduced on a larger scale.

Vertically aligned carbon nanotubes growth using self-assembled Ni nanoparticles produced by ion implantation

An alternative method for seeding catalyst nanoparticles for carbon nanotubes and nanowires growth is presented. Ni nanoparticles are formed inside a 450 nm SiO2 film on (100) Si wafers through the implantation of Ni ions at fluences of 7.5×1015 and 1.7×1016 ions.cm-2 and post-annealing treatments at 700, 900 and 1100°C. After exposed to the surface by HF dip etching, the Ni nanoparticles are used as catalyst for the growth of vertically aligned carbon nanotubes by direct current plasma enhanced chemical vapor deposition. © 2007 Materials Research Society.

Carbon nanotube based cathodes for microwave amplifiers

We have studied two different kinds of electron tubes using a cold field emission cathode as the electron source. This cathode is an array of vertically aligned multiwall carbon nanotubes. The first device is a triode. With this device, we demonstrated the modulation at 32 GHZ of a 1.4 A/cm2 peak current density with a 82% modulation ratio. The second device is a traveling wave tube. For this device, the objective is to test a cathode delivering a 2 A/cm 2 electron beam. ©2009 IEEE.

Characterization of nano-composite M-2411/Y-123 thin films by electron backscatter diffraction and in-field critical current measurements

Thin films of nano-composite Y-Ba-Cu-O (YBCO) superconductors containing nano-sized, non-superconducting particles of Y2Ba 4CuMOx (M-2411 with M = Ag and Nb) have been prepared by the PLD technique. Electron backscatter diffraction (EBSD) has been used to analyze the crystallographic orientation of nano-particles embedded in the film microstructure. The superconducting YBa2Cu3O7 (Y-123) phase matrix is textured with a dominant (001) orientation for all samples, whereas the M-2411 phase exhibits a random orientation. Angular critical current measurements at various temperature (T) and applied magnetic field (B) have been performed on thin films containing different concentration of the M-2411 second phase. An increase in critical current density J c at T < 77 K and B < 6 T is observed for samples with low concentration of the second phase (2 mol % M-2411). Films containing 5 mol % Ag-2411 exhibit lower Jc than pure Y-123 thin films at all fields and temperatures. Samples with 5 mol % Nb-2411 show higher Jc(B) than phase pure Y-123 thin films for T < 77 K. © 2010 IOP Publishing Ltd.

Critical current densities of MOCVD tapes for different current directions

The critical current density Jc of an MOCVD/IBAD coated conductor was measured on tracks patterned longitudinally (L) and transversely (T) to the tape direction. Despite the samples' vicinality no dependence J c of on track direction was found for magnetic fields applied perpendicular to the film plane. In angular out-of-plane measurements the previously reported asymmetry due to tilted precipitate planes was observed in an L track, whereas curves from a T track were almost perfectly symmetric with similarly high absolute values of Jc. At low fields the effects of surface pinning were seen. Our results show that in most scenarios the current carrying capability is equally as good parallel and perpendicular to the tape direction, which is highly relevant for ROEBEL cables. In measurements where the magnetic field was swept in the film plane the anisotropy was found to be significantly higher than for MOD/RABiTS samples, which we explain by the different morphology of grain boundaries in the tapes. At low temperatures Jc of a T track exhibited a clear signature of vortex channeling. © 2010 IEEE.

Hot electron field emission via individually transistor-ballasted carbon nanotube arrays.

We present electronically controlled field emission characteristics of arrays of individually ballasted carbon nanotubes synthesized by plasma-enhanced chemical vapor deposition on silicon-on-insulator substrates. By adjusting the source-drain potential we have demonstrated the ability to controllable limit the emission current density by more than 1 order of magnitude. Dynamic control over both the turn-on electric field and field enhancement factor have been noted. A hot electron model is presented. The ballasted nanotubes are populated with hot electrons due to the highly crystalline Si channel and the high local electric field at the nanotube base. This positively shifts the Fermi level and results in a broad energy distribution about this mean, compared to the narrow spread, lower energy thermalized electron population in standard metallic emitters. The proposed vertically aligned carbon nanotube field-emitting electron source offers a viable platform for X-ray emitters and displays applications that require accurate and highly stable control over the emission characteristics.