991 resultados para Electric conductivity.
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BaCe 0.9-xNb xY 0.1O 3-δ (where x=0, 0.01, 0.03 and 0.05) powders were synthesized by solid-state reaction to investigate the influence of Nb concentration on chemical stability and electrical properties of the sintered samples. The dense electrolyte pellets were formed from the powders after being uniaxially pressed and sintered at 1550 °C. The electrical conductivities determined by impedance measurements in temperature range of 550-750 °C in different atmospheres (dry argon and wet hydrogen) showed a decreasing trend with an increase of Nb content. For all samples higher conductivities were observed in the wet hydrogen than in dry argon atmosphere. The chemical stability was enhanced with increasing of Nb concentration. It was found that BaCe 0.87Nb 0.03Y 0.1O 3-δ is the optimal composition that satisfies the opposite demands for electrical conductivity and chemical stability, reaching 0.8×10 -2 S cm -1 in wet hydrogen at 650 °C compared to 1.01×10 -2 S cm -1 for undoped electrolyte. © 2012 Elsevier Ltd and Techna Group S.r.l.
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In this work, we investigate the correlations between structural and rheological properties of emulsified aqueous sol and the porous microstructure of monolithic zirconia foams, manufactured by the integrative combination of the sol-gel and emulsification processes. Macroporous zirconia ceramics prepared using different amounts of decahydronaphthalene, as oil phase, are compared in terms of the emulsion microstructure and ceramic porosity. A combination of electrical conductivity, oil droplet diameter, and rheological measurements was used to highlight the key effect of the dynamic structural properties of the emulsion on the porosity of the ceramic zirconia foam. The minimization of drying shrinkage by appropriate sol-gel mineralization of the oil droplet wall enabled versatile and easy tuning of the ceramic foam microstructure, by fine adjustment of the emulsion characteristics. The foam with the highest porosity (90%) and the lowest bulk density (0.40 g cm-3) was prepared from emulsion with 80 wt% of decahydronaphthalene, which also showed a bicontinuous structure and elevated flow consistency. © The Royal Society of Chemistry 2013.
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Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, combining the emission from the rare-earth doped transparent oxide (Eu3+-doped SnO2 presents very efficient red emission) with a high mobility semiconductor. The advantage of this structure is the possibility of separation of the rare-earth emission centers from the electron scattering, leading to a strongly indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films, and the monochromatic light irradiation (266 nm) at low temperature of the heterojunction GaAs/SnO2:Eu leads to intense conductivity increase. Scanning electron microscopy (SEM) of the heterojunction cross section shows high adherence and good morphological quality of the interfaces substrate/SnO2 and SnO2/GaAs, even though the atomic force microscopy (AFM) image of the GaAs surface shows disordered particles, which increases with sample thickness. On the other hand, the good morphology of the SnO2:Eu surface, shown by AFM, assures the good electrical performance of the heterojunction. The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels at the semiconductors interface, which may exhibit two-dimensional electron gas (2DEG) behavior. © 2012 Elsevier B.V. All rights reserved.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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It is shown that highly conducting films of polyaniline protonated with di-esters of sulfosuccinic and sulfophthalic acids which contain alkyl- or alkoxy-type substituents exhibit highly anisotropic structural, electrical and magnetic properties. The layered-like structure of these films can be described as consisting of polyaniline chains which are mainly oriented parallel to the plane of the film and form regular out-of-plane stacks. These stacks are separated by bilayers of the dopant anions. Accordingly, the main anisotropy observed for solution cast films implies in-plane and out-of-plane measurements. An electrical anisotropy of about 80 is found for the in-plane and out-of-plane electronic conductivities at 5 K. The temperature dependences of the in-plane and out-of-plane conductivities are qualitatively similar and have been fitted as a series combination of variable-range-hopping-type and power law contributions. A maximum is observed in the temperature dependence of the electrical anisotropy at low temperature. The films also show a clear anisotropy of magnetization whose temperature and field characteristics depend on the chemical structure of the dopant anion. © 2013 Elsevier B.V.
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The influence of Ta concentration on the stability of BaCe 0.9-xTaxY0.1O3-δ (where x=0.01, 0.03 and 0.05) powders and sintered samples in CO2, their microstructure and electrical properties were investigated. The ceramic powders were synthesized by the method of solid state reaction, uniaxially pressed and sintered at 1550 °C to form dense electrolyte pellets. A significant stability in CO2 indicated by the X-ray analysis performed was observed for the samples with x≥0.03. The electrical conductivities determined by impedance measurements in the temperature range of 550-750 °C and in various atmospheres (dry argon, wet argon and wet hydrogen) increased with temperature but decreased with Ta concentration. The highest conductivities were observed in the wet hydrogen atmosphere, followed by those in wet argon, while the lowest were obtained in the dry argon atmosphere for each dopant concentration. The composition with Ta content of 3 mol% showed satisfactory characteristics: good resistance to CO2 in extreme testing conditions, while a somewhat reduced electrical conductivity is still comparable with that of BaCe0.9Y0.1O3-δ. © 2012 Elsevier Ltd and Techna Group S.r.l.
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Thin films of the semiconductor NiO are deposited using a straightforward combination of simple and versatile techniques: the co-precipitation in aqueous media along with the dip- coating process. The obtained material is characterized by gravimetric/differential thermal analysis (TG-DTA) and X-ray diffraction technique. TG curve shows 30 % of total mass loss, whereas DTA indicates the formation of the NiO phase about 578 K (305 C). X-ray diffraction (XRD) data confirms the FCC crystalline phase of NiO, whose crystallinity increases with thermal annealing temperature. UV-Vis optical absorption measurements are carried out for films deposited on quartz substrate in order to avoid the masking of bandgap evaluation by substrate spectra overlapping. The evaluated bandgap is about 3.0 eV. Current-voltage (I-V) curves measured for different temperatures as well as the temperature-dependent resistivity data show typical semiconductor behavior with the resistivity increasing with the decreasing of temperature. The Arrhenius plot reveals a level 233 meV above the conduction band top, which was attributed to Ni2+ vacancy level, responsible for the p-type electrical nature of NiO, even in undoped samples. Light irradiation on the films leads to a remarkable behavior, because above bandgap light induced a resistivity increase, despite the electron-hole generation. This performance was associated with excitation of the Ni 2+ vacancy level, due to the proximity between energy levels. © 2012 Springer Science+Business Media New York.
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With the objective of evaluating the effects of N and K concentrations for melon plants, an experiment was carried out from July 1, 2011 to January 3, 2012 in Muzambinho city, Minas Gerais State, Brazil. The Bonus no. 2 was cultivated at the spacing of 1.1 × 0.4. The experimental design was a randomized complete block with three replications in a 4 × 4 factorial scheme with four N concentrations (8, 12, 16, and 20 mmol L-1) and four K concentrations (4, 6, 8, and 10 mmol L-1). The experimental plot constituted of eight plants. It was observed that the leaf levels of N and K, of N-NO3 and of K, and the electrical conductivity (CE) of the substrate increased with the increment of N and K in the nutrients' solution. Substratum pH, in general, was reduced with increments in N concentration and increased with increasing K concentrations in the nutrients' solution. Leaf area increased with increments in N concentration in the nutrients solution. Fertigation with solutions stronger in N (20 mmol L-1) and K (10 mmol L-1) resulted in higher masses for the first (968 g) and the second (951 g) fruits and crop yield (4,425 gm-2). © 2013 Luiz Augusto Gratieri et al.
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In the current article, we studied the effect of yttrium [Y3+] ions' substitution on the structure and electric behavior of barium zirconate titanate (BZT) ceramics with a general formula [Ba1-x Y 2x/3](Zr0.25Ti0.75)O3 (BYZT) with [x = 0, 0.025, 0.05] which were prepared by the solid-state reaction method. X-ray diffraction patterns indicate that these ceramics have a single phase with a perovskite-type cubic structure. Rietveld refinement data confirmed [BaO 12], [ZrO6], [TiO6], [YO6] clusters in the cubic lattice. The Y3+ ions' effects on the electric conductivity behavior of BZT ceramics as a function of temperature and frequency are described, which are based on impedance spectroscopy analyses. The complex impedance plots display a double semicircle which highlights the influences of grain and grain boundary on the ceramics. Impedance analyses showed that the resistance decreased with the increasing temperature and resulted in a negative temperature coefficient of the resistance property in all compositions. Modulus plots represent a non-Debye-type dielectric relaxation which is related to the grain and grain boundary as well as temperature-dependent electric relaxation phenomenon and an enhancement in the mobility barrier by Y3+ ions. Moreover, the electric conductivity increases with the replacement of Ba 2+ by Y3+ ions may be due to the rise in oxygen vacancies. © 2013 The Minerals, Metals & Materials Society and ASM International.
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The inadequate and indiscriminate disposal of sugarcane vinasse in soils and water bodies has received much attention since decades ago, due to environmental problems associated to this practice. Vinasse is the final by-product of the biomass distillation, mainly for the production of ethanol, from sugar crops (beet and sugarcane), starch crops (corn, wheat, rice, and cassava), or cellulosic material (harvesting crop residues, sugarcane bagasse, and wood). Because of the large quantities of vinasse produced, alternative treatments and uses have been developed, such as recycling of vinasse in fermentation, fertirrigation, concentration by evaporation, and yeast and energy production. This review was aimed at examining the available data on the subject as a contribution to update the information on sugarcane vinasse, from its characteristics and chemical composition to alternatives uses in Brazil: fertirrigation, concentration by evaporation, energy production; the effects on soil physical, chemical and biological properties; its influence on seed germination, its use as biostimulant and environmental contaminant. The low pH, electric conductivity, and chemical elements present in sugarcane vinasse may cause changes in the chemical and physical-chemical properties of soils, rivers, and lakes with frequent discharges over a long period of time, and also have adverse effects on agricultural soils and biota in general. Thus, new studies and green methods need to be developed aiming at sugarcane vinasse recycling and disposal. © 2013 Elsevier Ltd. All rights reserved.
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)