912 resultados para EXTERNAL IRRADIATION


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Chromium substituted beta diketonate complexes of aluminium have been synthesized and employed as precursors for a novel soft chemistry process wherein microwave irradiation of a solution of the complex yields within minutes well crystallized needles of alpha (Al1 XCrx)(2)O-3 measuring 20 30 nm in diameter and 50 nm long By varying the microwave irradiation parameters and using a surfactant such as polyvinyl pyrrolidone the crystallite size and shape can be controlled and their agglomeration prevented These microstructural parameters as well as the polymorph of the Cr substituted Al2O3 formed may also be controlled by employing a different complex Samples of alpha (Al1 XCrx)(2)O-3 have been characterized by XRD FTIR and TEM The technique results in material of homogeneous metal composition, as shown by EDAX and can be adjusted as desired The technique has been extended to obtain coatings of alpha (Al1 XCrx)(2)O-3 on Si(100)

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Poly(ethylene-co-vinyl acetate) (EVA) films were irradiated with a 1.2MeV electron beam at varied doses over the range 0-270kGy in order to investigate the modifications induced in its optical, electrical and thermal properties. It was observed that optical band gap and activation energy of EVA films decreased upon electron irradiation, whereas the transition dipole moment, oscillator strength and number of carbon atoms per cluster were found to increase upon irradiation. Further, the dielectric constant, the dielectric loss, and the ac conductivity of EVA films were found to increase with an increase in the dose of electron radiation. The result further showed that the thermal stability of EVA film samples increased upon electron irradiation.

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The variation of the drag force near the top portions of tall stacks with and without external landing platforms, and with the exit open and closed, has been examined by model studies in a wind tunnel at Reynolds numbers of about 10(5). Pressure measurements on three models of different height to diameter ratios have been supplemented by flow visualisation studies. Observations confirm that when there is no platform, significant load enhancement over the top three to four diameters occurs, due to the high suction caused by the sharp separation of the flow over the top from the rim, in the aft regions of the stack. The enhanced loading is found to be greater if the exit is closed. A platform at the top, of less than twice the exit diameter, further increases the drag force near the top, but a still larger platform at the top, of about three times the exit diameter, decreases the drag force to values less than those much further below, effectively nullifying the enhanced drag force. It was found that such a reduction of the enhanced drag force in the top regions can also be achieved by a smaller platform of 1.1 to 1.3 times the local diameter, located at about three to five diameters below the top.

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The potential predictability of the Indian summer monsoon due to slowly varying sea surface temperature (SST) forcing is examined. Factors responsible for limiting the predictability are also investigated. Three multiyear simulations with the R30 version of the Geophysical Fluid Dynamics Laboratory's climate model are carried out for this purpose, The mean monsoon simulated by this model is realistic including the mean summer precipitation over the Indian continent. The interannual variability of the large-scale component of the monsoon such as the "monsoon shear index" and its teleconnection with Pacific SST is well simulated by the model in a 15-yr integration with observed SST as boundary condition. On regional scales, the skill in simulating the interannual variability of precipitation over the Indian continent by the model is rather modest and its simultaneous correlation with eastern Pacific SST is negative but poor as observed. The poor predictability of precipitation over the Indian region in the model is related to the fact that contribution to the interannual variability over this region due to slow SST variations [El Nino-Southern Oscillation (ENSO) related] is comparable to those due to regional-scale fluctuations unrelated to ENSO SST. The physical mechanism through which ENSO SST tend to produce reduction in precipitation over the Indian continent is also elucidated. A measure of internal variability of the model summer monsoon is obtained from a 20-yr integration of the same model with fixed annual cycle SST as boundary conditions but with predicted soil moisture and snow cover. A comparison of summer monsoon indexes between this run and the observed SST run shows that the internal oscillations can account for a large fraction of the simulated monsoon variability. The regional-scale oscillations in the observed SST run seems to arise from these internal oscillations. It is discovered that most of the interannual internal variability is due to an internal quasi-biennial oscillation (QBO) of the model atmosphere. Such a QBO is also found in the author's third 18-yr simulation in which fixed annual cycle of SST as well as soil moisture and snow cover are prescribed. This shows that the model QBO is not due to land-surface-atmosphere interaction. It is proposed that the model QBO arises due to an interaction between nonlinear intraseasonal oscillations and the annual cycle. Spatial structure of the QBO and its role in limiting the predictability of the Indian summer monsoon is discussed.

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Irradiation of 4-aryl-4-alkylhex-5-en-2-ones (e.g. 1a) or 5-aryl-4-alkylhex-5-en-2-ones (e.g. 2a) adsorbed on montmorillonite K-10 in a commercial microwave oven furnishes the multialkylated naphthalenes (e.g. 3).

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We incorporate the effects of fluctuations in a density functional analysis of the freezing of a colloidal liquid in the presence of an external potential generated by interfering laser beams. A mean-field treatment, using a density functional theory, predicts that with the increase in the strength of the modulating potential, the freezing transition changes from a first order to a continuous one via a tricritical point for a suitable choice of the modulating wavevectors. We demonstrate here that the continuous nature of the freezing transition at large values of the external potential V-e survives the presence of fluctuations. We also show that fluctuations tend to stabilize the liquid phase in the large V-e regime.

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The prop-2-ynyloxy carbonyl function (POC) which can be cleaved under mild and neutral conditions in the presence of benzyltriethylammonium tetrathiomolybdate has been developed as a new protecting group for amines. (C) 1999 Elsevier Science Ltd. All rights reserved.

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Single crystal (100) wafers of n-InSb were implanted with 50 MeV Li3+ ions at various fluences ranging from 10(10) to 10(14) ions/cm(2) at room temperature. Investigations of the optical, electrical, and structural properties of the as-grown, irradiated, annealed wafers were carried out by infrared and Raman spectroscopies, Hall measurements, and high resolution x-ray diffraction (HRXRD). In the case of samples irradiated with an ion fluence of 1.6x10(14) ions/cm(2), electrical measurements at 80 K reveal that there is a decrease in carrier concentration from 8.5x10(15) (for unirradiated) to 1.1x10(15)/cm(3) and an increase in mobility from 5.4x10(4) to 1.67x10(5) cm(2)/V s. The change in carrier concentration is attributed to the creation of electron trap centers induced by ion beam irradiation and the increase in mobility to the formation of electrical inactive complexes. Nevertheless, even with the irradiation at 1.6x10(14) ions/cm(2) fluence the crystalline quality remains largely unaffected, as is seen from HRXRD and Raman studies. (C) 2001 American Institute of Physics.

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As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe(+) ion beam to an ion fluence of about 10(16) ions-cm(-2). Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti(5)Si(3) intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

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Nanostructured materials have attracted considerable interest in recent years due to their properties which differ strongly from their bulk phase and potential applications in nanoscale electronic and optoelectronic devices. Metal oxide nanostructures can be synthesized by variety of different synthesis techniques developed in recent years such as thermal decomposition, sol-gel technique, chemical coprecipitation, hydrothermal process, solvothermal process, spray pyrolysis, polyol process etc. All the above processes go through a tedious synthesis procedure followed by prolonged heat treatment at elevated temperature and are time consuming. In the present work we describe a rapid microwave irradiation-assisted chemical synthesis technique for the growth of nanoparticles, nanorods, and nanotubes of a variety of metal oxides in the presence of an appropriate surfactant, without the use of any templates The method is simple, inexpensive, and helps one to prepare nanostructures in a very simple way, and in a very short time, measured in minutes. The synthesis procedure employs high quality metalorganic complexes (typically -diketonates) featuring a direct metal-to-oxygen bond in its molecular structure. The complex is dissolved in a suitable solvent, often with a surfactant added, and the solution then subjected to microwave irradiation in a domestic microwave oven operating at 2.45 GHz frequency with power varying from 160-800 W, from a few seconds to a few minutes, leading to the formation of corresponding metal oxides. This method has been used successfully to synthesize nanostructures of a variety of binary and ternary metal oxides such as ZnO, CdO, Fe2O3, CuO, Ga2O3, Gd2O3, ZnFe2O4, etc. There is an observed variation in the morphology of the nanostructures with the change of different parameters such as microwave power, irradiation time, appropriate solvent, surfactant type and concentration. Cationic, anionic, nonionic and polymeric surfactants have been used to generate a variety of nanostructures. Even so, to remove the surfactant, there is either no need of heat treatment or a very brief exposure to heat suffices, to yield highly pure and crystalline oxide materials as prepared. By adducting the metal complexes, the shape of the nanostructures can be controlled further. In this manner, very well formed, single-crystalline, hexagonal nanorods and nanotubes of ZnO have been formed. Adducting the zinc complex leads to the formation of tapered ZnO nanorods with a very fine tip, suitable for electron emission applications. Particle size and their monodispersity can be controlled by a suitable choice of a precursor complex, the surfactant, and its concentration. The resulting metal oxide nanostructures have been characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, FTIR spectroscopy, photoluminescence, and electron emission measurements.

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As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe+ ion beam to an ion fluence of about 1016 ions-cm−2. Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti5Si3 intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

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An external pipe-crawling device presented in this paper aids the inspection of pipes in hazardous environments and areas inaccessible to humans. The principal component of our design, which uses inchworm type motion, is a compliant ring mechanism actuated using shape memory alloy (SMA) wire. It was fabricated and tested and was reported in our earlier work. But this device had a drawback of low crawling speed (about 1 mm/min) owing to the delay in heating and cooling of the SMA strips in the linear actuation. Additionally, that design also had the difficulties of mounting on pipes with closed ends, large radial span, and the need for housing for electrical insulation and guiding of the SMA wire. In this paper we present a compact design that overcomes the difficulties of the earlier design. In particular, we present a compact compliant mechanism with two halves so as to enable mounting and un-mounting on any closed or open pipe. Another feature is the presence of insulation and guiding of the SMA wire without housing. This design results in a reduction of the radial span of the ring from 22 mm to 12 mm, and the stiffness of the mechanism and the SMA wire are matched. An SMA helical spring is to used in the place of an SMA strip to increase the crawling speed of the device. A microcontroller-based circuitry is also fitted to cyclically.activate the SMA wires and springs.

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The ferroelectric Pb(Zr0.53Ti0.47)O-3 (PZT) and SrBi2Ta2O9 (SBT) thin films were prepared by laser ablation technique. The dielectric analysis, capacitance-voltage, ferroelectric hysteresis and DC leakage current measurements were performed before and after 50 MeV Li3+ ion irradiation. In both thin films, the irradiation produced some amount of amorphisation, considerable degradation in the ferroelectric properties and change in DC conductivity. On irradiation of these thin films, the phase transition temperature [T-c] of PZT decreased considerably from 628 to 508 K, while SBT exhibited a broad and diffuse transition with its T-c decreased from 573 to 548 K. The capacitance-voltage curve at 100 kHz showed a double butterfly loop with a large decrease in the capacitance and switching voltage. There was decrease in the ferroelectric hysteresis loop, remanant polarisation and coercive field. After annealing at a temperature of 673 K for 10 min while PZT partially regained the ferroelectric properties, while SBT did not. The DC conductivity measurements showed a shift in the onset of non-linear conduction region in irradiated SBT. The degradation of ferroelectric properties of the irradiated thin films is attributed to the irradiation-induced partial amorphization and the pinning of the ferroelectric domains by trapped charges. The regaining of properties after annealing is attributed to the thermal annealing of the defects generated during the irradiation. (C) 2003 Elsevier Science B.V. All rights reserved.