HVIC switch for high-frequency power converters

A high voltage integrated circuit (HVIC) switch designed as a building block for power converters operating up to 13.56 MHz from off-line voltages is presented. A CMOS-compatible, 500 V power device process is used to integrate control circuitry with a high-speed MOS gate driver and high voltage lateral power MOSFET. Fabrication of the HVIC switches has proceeded in two stages. The first batch of devices showed switching times of less than 5 ns for the power switch and good high frequency performance of a level-shifter for driving half bridge converters. In the second phase, a switch that monolithically integrates all the elements required to form a complete high-frequency converter has been designed.

Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

All-optical switching in a vertical coupler space switch employing photocarrier-induced nonlinearity

A novel compact integrated nonlinear optical switch is demonstrated. Using a high-power picosecond pulse of 5-ps pulsewidth and 250-MHz repetition rate, all-optical switching with a contrast ratio of 23 dB has been achieved using an in-fiber input power < 14 dBm (100 pJ/pulse). The switch speed depends on the carrier sweep-out time, which can be reduced to the 10 ps range by either applying a reverse bias or by introduction of carrier recombination centers in the active layer.

The need for winter in the switch to flowering.

Vernalization is the process whereby the floral transition is promoted through exposure of plants to long periods of cold temperature or winter. A requirement for vernalization aligns flowering with the seasons to ensure that their reproductive phase occurs in favorable conditions. The mitotic stability of vernalization, suggestive of an epigenetic mechanism, has intrigued researchers for many years. Genetic analysis of the vernalization requirement in Arabidopsis has identified key floral repressor genes, FRI and FLC. The action of these floral repressors is antagonized by vernalization and the activity of a set of genes grouped into the autonomous floral pathway. Analysis of the vernalization pathway has defined a series of epigenetic regulators crucial for "cellular-memory" of the cold signal, whereas the autonomous pathway appears to function in part through posttranscriptional mechanisms. The mechanism of the vernalization requirement, which is now being explored in a range of plant species, should uncover the evolutionary origins of this key agronomic trait.

Active-passive 44 SOA-based switch with integrated power monitoring

The first monolithically integrated 44 switch with power monitoring function using on-chip PIN photodiodes is reported. Using 10Gb/s signals, under active power control an IPDR of 12dB for a 1dB power penalty is achieved. © 2012 OSA.

All optical degenerate mode-group multiplexing using a Mode Selective Switch

A Mode Selective Switch based around an LCoS Spatial Light Modulator is demonstrated to optically demultiplex modes with the same propagation constants to the same output fibres, using a common phase mask for all channels. © 2012 IEEE.

Two-orbit switch-pitch structures

The Hoberman 'switch-pitch ' ball is a transformable structure with a single folding and unfolding path. The underlying cubic structure has a novel mechanism that retains tetrahedral symmetry during folding. Here, we propose a generalized class of structures of a similar type that retain their full symmetry during folding. The key idea is that we require two orbits of nodes for the structure: within each orbit, any node can be copied to any other node by a symmetry operation. Each member is connected to two nodes, which may be in different orbits, by revolute joints. We will describe the symmetry analysis that reveals the symmetry of the internal mechanism modes for a switch-pitch structure. To follow the complete folding path of the structure, a nonlinear iterative predictor-corrector algorithm based on the Newton method is adopted. First, a simple tetrahedral example of the class of two-orbit structures is presented. Typical configurations along the folding path are shown. Larger members of the class of structures are also presented, all with cubic symmetry. These switch-pitch structures could have useful applications as deployable structures.

A numerical simulation of AFR switch of SI engines

A novel mechanical method of achieving a rapid switch between stoichiometric and lean conditions for SI engines is explored. Two and three throttle configurations, a switch strategy which employs a standard intake manifold and an assembly of pipes and throttle(s), are investigated numerically by using a one-dimensional engine simulation program based on the method of characteristics. The results indicate that it is possible to achieve rapid AFR switch without a torque jump, i.e. unperceptible to the driver. © 1998 Society of Automotive Engineers, Inc.