Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor

Atom probe tomography was used to study the redistribution of platinum and arsenic atoms after Ni(Pt) silicidation of As-doped polycrystalline Si. These measurements were performed on a field-effect transistor and compared with those obtained in unpatterned region submitted to the same process. These results suggest that Pt and As redistribution during silicide formation is only marginally influenced by the confinement in microelectronic devices. On the contrary, there is a clear difference with the redistribution reported in the literature for the blanket wafers. Selective etching used to remove the non-reacted Ni(Pt) film after the first rapid heat treatment may induce this difference. © 2011 American Institute of Physics.

Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film

A mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film and a mixed amorphous Se-As2Se3 film is compared from a durability perspective and photo-electric perspective. The former is durable to incident laser induced degradation after numerous laser scans and does not crystallise till 105 of annealing, both of which are improved properties from the mixed evaporated film. In terms of photo-electric properties, the ratio between the photocurrent and the dark current improved whereas the increase of the dark current was higher than that of As2Se3 due to the unique current path developed within the mille-feuille structure. Implementing this structure into various amorphous semiconductors may open up a new possibility towards structure-sensitive amorphous photoconductors. © 2013 Elsevier B.V.

Speciation and Phylogeography of Opsariichthys bidens (Pisces: Cypriniformes: Cyprinidae) in China: Analysis of the Cytochrome b Gene of mtDNA from Diverse Populations

Gao-Yan Li, Xu-Zhen Wang, Ya-Hui Zhao, Jie Zhang, Chun-Guang Zhang, and Shun-Ping He (2009) Speciation and phylogeography of Opsariichthys bidens (Pisces: Cypriniformes: Cyprinidae) in China: analysis of the cytochrome b gene of mtDNA from diverse populations. Zoological Studies 48(4): 569-583. The cyprinid fish Opsariichthys bidens Gunther is distributed in all major river systems of continental East Asia, and represents an attractive model for phylogeographic studies among cyprinid species or within a given species. In this study, we investigated the phylogeographic and demographic history of this species, using partial sequences of the cytochrome (cyt) b gene in mitochondrial (mt)DNA. Fish samples were collected from almost all major river systems where O. bidens is distributed in China. Sequence analysis showed remarkably high polymorphism, with 125 haplotypes in the 234 specimens examined, and with 89.8% of haplotypes occurring in only 1 specimen. A neutrality test indicated that some groups were not at mutation-drift equilibrium, suggesting a past population expansion. These results were supported by a mismatch distribution analysis. Based on our analysis, O. bidens consists of 4 groups belonging to 2 clades. The divergence time of the 2 clades was estimated to be 11.06-8.04 my. This value corresponds to the time of the 2nd uplift of the Qinghai-Tibet Plateau, the emergence of the East Asian monsoon, and the Epoch-6 Event. A two species scheme is proposed. http://zoolstud.sinica.edu.tw/Journals/48.4/569.pdf

Phylogeny and speciation of the eastern Asian cyprinid genus Sarcocheilichthys

The genus Sarcocheilichthys is a group of small cyprinid fishes comprising 10 species/sub-species widely distributed in East Asia, which represents a valuable model for understanding the speciation of freshwater fishes in East Asia. In the present study, the molecular phylogenetic relationship of the genus Sarcocheilichthys was investigated using a 1140 bp section of the mitochondrial cytochrome b gene. Two different tree-building methods, maximum parsimony (MP) and Bayesian methods, yielded trees with almost the same topology, yielding high bootstrap values or posterior probabilities. The results showed that the genus Sarcocheilichthys consists of two large clades, clades I and II. Clade I contains Sarcocheilichthys lacustris, Sarcocheilichthys sinensis and Sarcocheilichthys parvus, with S. parvus at a basal position. In clade II, Sarcocheilichthys variegatus microoculus is at a basal position; samples of the widespread species, Sarcocheilichthys nigripinnis, form a large subclade containing another valid species Sarcocheilichthys czerskii. Sarcocheilichthys kiangsiensis is retained at an intermediate position. Since S. czerskii is a valid species in the S. nigripinnis clade, remaining samples of S. nigripinnis form a paraphyly. This speciation process is attributed to geographical isolation and special environmental conditions experienced by S. czerskii and stable environments experienced by the other S. nigripinnis populations. This type of speciation process was suggested to be very common. Samples of Sarcocheilichthys sinensis sinensis and Sarcocheilichthys sinensis fukiensis that did not form their own monophyletic groups suggest an early stage of speciation and support their sub-species status. Molecular clock analysis indicates that the two major lineages of the genus Sarcocheilichthys, clades I and II diverged c. 8.89 million years ago (mya). Sarcocheilichthys v. microoculus from Japan probably diverged 4.78 mya from the Chinese group. The northern-southern clades of S. nigripinnis began to diverge c. 2.12 mya, while one lineage of S. nigripinnis evolved into a new species, S. czerski, c. 0.34 mya. (C) 2008 The Authors Journal compilation (C) 2008 The Fisheries Society of the British Isles.

The uplift of Qinghai-Xizang (Tibet) Plateau and the vicariance speciation of glyptosternoid fishes (Siluriformes : Sisoridae)

Based on the phylogenetic and biogeographical studies of the glyptosternoid fishes in Qinghai-Tibet area, the following hypothesis is proposed: the speciation of this group has a direct relationship with the three uplift intervals of the Qinghai-Tibet Plateau. This process was explained by the theory of vicariance of biogeography. The ancestor of this group was similar to Bagarus and/or Glyptothorax, which still have a wide distribution. At the moment when the Tethys sea closed, the Indian tectonic plate collided with the Eurasian tectonic plate, so the Glyptothorax-like and Bagarus-like ancestors entered Eurasia and gradually became widely distributed. After the Pleistocene, with the enforced colliding, the gradual uplift of the Qinghai-Tibet Plateau brought about the current water environment, and the Glyptosternoids were generated from Glyptothorax-like fish under this environment. The present Glyptosternum, distributed across the Himalayas is the ancestor of Glyptosternoids. In the three uplift intervals of the plateau, the water system of this region was separated gradually and Glyptosternum-like ancestor was isolated in different rivers and evolved into various species. All this resulted in the speciation and formation of the biogeographical pattern of glyptosternoids.

Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells

Optical transient current spectroscopy (OTCS), photoluminescence (PL) spectroscopy and excitonic electroabsorption spectroscopy have been used to investigate the evolution of defects in the low-temperature grown GaAs/AlGaAs multiple quantum well structures during the postgrowth rapid thermal annealing. The sample was grown at 350 degrees C by molecular beam epitaxy on miscut (3.4 degrees off (001) towards (111)A) (001) GaAs substrate. After growth, the sample was subjected to 30s rapid thermal annealing in the range of 500-800 degrees C. It is found that the integrated PL intensity first decreases with the annealing temperature, then gets a minimum at 600 degrees C and finally recovers at higher temperatures. OTCS measurement shows that besides As,, antisites and arsenic clusters, there are several relatively shallower deep levels with excitation energies less than 0.3 eV in the as-grown and 500 degrees C-annealed samples. Above 600 degrees C, OTCS signals from As,, antisites and shallower deep levels become weaker, indicating the decrease of these defects. It is argued that the excess arsenic atoms group together to form arsenic clusters during annealing. (C) 2000 Elsevier Science B.V. All rights reserved.

Effect of arsenic precipitates on Fermi level in GaAs grown by molecular-beam epitaxy at low temperature

A simple model is presented to discuss the effect of As precipitates on the Fermi level in GaAs grown by molecular-beam epitaxy at low temperature (LT-GaAs). This model implements the compensation between point defects and the depletion of arsenic precipitates. The condition that the Fermi level is pinned by As precipitates is attained. The shifts of the Fermi level in LT-GaAs with annealing temperature are explained by our model. Additionally, the role of As precipitates in conventional semi-insulating GaAs is discussed. (C) 2000 American Institute of Physics. [S0021-8979(00)09905-9].

Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing

The formation of arsenic clusters in a system of vertically aligned InAs quantum islands on GaAs during thermal annealing under As overpressure has been investigated by transmission electron microscopy (TEM) and Raman scattering. Semicoherent arsenic clusters, identified by TEM examination, have been formed on the surface of the GaAs capping layer. The existence of arsenic precipitates is also confirmed by Raman spectra, showing new peaks from the annealed specimen at 256 and 199 cm(-1). These peaks have been ascribed to A(1g) and E-g Raman active phonons of crystalline arsenic. The phenomenon can be understood by a model of strain-induced selected growth under As overpressure. (C) 1999 American Institute of Physics. [S0003-6951(99)02045-8].

Rapid thermal annealing of arsenic implanted Si1-xGex epilayers

Rapid thermal annealing of arsenic implanted Si1-xGex was studied by secondary ion-mass spectroscopy (SIMS) and spreading resistance probe (SRP) over a wide range of Ge fractions (0-43%). Redistribution of the implanted arsenic was followed as a function of Ge content and annealing temperature. Arsenic concentration profiles from SIMS indicated that the behavior of implanted arsenic in Si1-xGex after RTA was different from that in Si, and the Si1-xGex samples exhibited box-shaped, concentration-dependent diffusion profiles with increasing Ge content. The maximum concentrations of electrically active arsenic in Si1-xGex was found to decrease with increasing Ge content. Experimental results showed that the arsenic diffusion is enhanced with increasing temperature for certain Ge content and strongly dependent on Ge content, and the higher Ge content, the faster As diffusion.

Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy

The structural properties of GaAs grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) were studied. The excess arsenic atoms in LTMBE GaAs exist in the form of arsenic interstitial couples (i,e, two ns atoms share the one host site), and cause an increase in the lattice parameter of LTMBE GaAs. Annealing at above 300 degrees C, the arsenic interstitial couples decomposed, and As precipitates formed, resulting in a decrease in the lattice parameter.