936 resultados para (nonbullate form)


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In the context of SPH-based simulations of impact dynamics, an optimised and automated form of the acceleration correction algorithm (Shaw and Reid, 2009a) is developed so as to remove spurious high frequency oscillations in computed responses whilst retaining the stabilizing characteristics of the artificial viscosity in the presence of shocks and layers with sharp gradients. A rational framework for an insightful characterisation of the erstwhile acceleration correction method is first set up. This is followed by the proposal of an optimised version of the method, wherein the strength of the correction term in the momentum balance and energy equations is optimised. For the first time, this leads to an automated procedure to arrive at the artificial viscosity term. In particular, this is achieved by taking a spatially varying response-dependent support size for the kernel function through which the correction term is computed. The optimum value of the support size is deduced by minimising the (spatially localised) total variation of the high oscillation in the acceleration term with respect to its (local) mean. The derivation of the method, its advantages over the heuristic method and issues related to its numerical implementation are discussed in detail. (C) 2011 Elsevier Ltd. All rights reserved.

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We consider the vector and scalar form factors of the charm-changing current responsible for the semileptonic decay D -> pi/nu. Using as input dispersion relations and unitarity for the moments of suitable heavy-light correlators evaluated with Operator Product Expansions, including O(alpha(2)(s)) terms in perturbative QCD, we constrain the shape parameters of the form factors and find exclusion regions for zeros on the real axis and in the complex plane. For the scalar form factor, a low-energy theorem and phase information on the unitarity cut are also implemented to further constrain the shape parameters. We finally propose new analytic expressions for the D pi form factors, derive constraints on the relevant coefficients from unitarity and analyticity, and briefly discuss the usefulness of the new parametrizations for describing semileptonic data.

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This paper presents a new algorithm for extracting Free-Form Surface Features (FFSFs) from a surface model. The extraction algorithm is based on a modified taxonomy of FFSFs from that proposed in the literature. A new classification scheme has been proposed for FFSFs to enable their representation and extraction. The paper proposes a separating curve as a signature of FFSFs in a surface model. FFSFs are classified based on the characteristics of the separating curve (number and type) and the influence region (the region enclosed by the separating curve). A method to extract these entities is presented. The algorithm has been implemented and tested for various free-form surface features on different types of free-form surfaces (base surfaces) and is found to correctly identify and represent the features irrespective of the type of underlying surface. The representation and extraction algorithm are both based on topology and geometry. The algorithm is data-driven and does not use any pre-defined templates. The definition presented for a feature is unambiguous and application independent. The proposed classification of FFSFs can be used to develop an ontology to determine semantic equivalences for the feature to be exchanged, mapped and used across PLM applications. (C) 2011 Elsevier Ltd. All rights reserved.

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Short range side chain-backbone hydrogen bonded motifs involving Asn and Gln residues have been identified from a data set of 1370 protein crystal structures (resolution = 1.5 angstrom). Hydrogen bonds involving residues i - 5 to i + 5 have been considered. Out of 12,901 Asn residues, 3403 residues (26.4%) participate in such interactions, while out of 10,934 Gln residues, 1780 Gln residues (16.3%) are involved in these motifs. Hydrogen bonded ring sizes (Cn, where n is the number of atoms involved), directionality and internal torsion angles are used to classify motifs. The occurrence of the various motifs in the contexts of protein structure is illustrated. Distinct differences are established between the nature of motifs formed by Asn and Gln residues. For Asn, the most highly populated motifs are the C10 (COdi .NHi + 2), C13 (COdi .NHi + 3) and C17 (NdHi .COi - 4) structures. In contrast, Gln predominantly forms C16 (COei .NHi - 3), C12 (NeHi .COi - 2), C15 (NeHi .COi - 3) and C18 (NeHi .COi - 4) motifs, with only the C18motif being analogous to the Asn C17structure. Specific conformational types are established for the Asn containing motifs, which mimic backbone beta-turns and a-turns. Histidine residues are shown to serve as a mimic for Asn residues in side chain-backbone hydrogen bonded ring motifs. Illustrative examples from protein structures are considered. Proteins 2012; (c) 2011 Wiley Periodicals, Inc.

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Condensation reaction involving substituted aminobenzoic acids (2-aminobenzoic acid and 4-aminobenzoic acid) and acetylacetone results in the formation of ketoimines [CH3C(= O)CH2C(CH3)(= NAr)] (Ar = C6H4COOH-4; 1 and C6H4COOH-2 2). Compounds 1 and 2 have been characterized by spectroscopic techniques and by single crystal X-ray diffraction studies. The absorption, emission and lifetime measurement studies have also been performed for the new compounds. While compound 1 forms a linear chain type of aggregation though intermolecular hydrogen bonding, compound 2 forms a discrete dimer in the solid state.

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The factorization theorem for exclusive processes in perturbative QCD predicts the behavior of the pion electromagnetic form factor F(t) at asymptotic spacelike momenta t(= -Q(2)) < 0. We address the question of the onset energy using a suitable mathematical framework of analytic continuation, which uses as input the phase of the form factor below the first inelastic threshold, known with great precision through the Fermi-Watson theorem from pi pi elastic scattering, and the modulus measured from threshold up to 3 GeV by the BABAR Collaboration. The method leads to almost model-independent upper and lower bounds on the spacelike form factor. Further inclusion of the value of the charge radius and the experimental value at -2.45 GeV2 measured at JLab considerably increases the strength of the bounds in the region Q(2) less than or similar to 10 GeV2, excluding the onset of the asymptotic perturbative QCD regime for Q(2) < 7 GeV2. We also compare the bounds with available experimental data and with several theoretical models proposed for the low and intermediate spacelike region.

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Polymorphic anhydrous cocrystals generated from a methanolic solution of gallic acid monohydrate and acetamide are shown to convert to the stable form II on complete drying, and the pathway to the stable form is explained on the basis of the variability in the hydrogen bonding patterns followed by theoretical calculations.

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We study the shape parameters of the Dπ scalar and vector form factors using as input dispersion relations and unitarity for the moments of suitable heavy-light correlators evaluated with Operator Product Expansions, including O(α 2 s) terms in perturbative QCD. For the scalar form factor, a low energy theorem and phase information on the unitarity cut are implemented to further constrain the shape parameters. We finally determine points on the real axis and isolate regions in the complex energy plane where zeros of the form factors are excluded.

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Analyticity and unitarity techniques are employed to obtain bounds on the shape parameters of the scalar and vector form factors of semileptonic K l3 decays. For this purpose we use vector and scalar correlators evaluated in pQCD, a low energy theorem for scalar form factor, lattice results for the ratio of kaon and pion decay constants, chiral perturbation theory calculations for the scalar form factor at the Callan-Treiman point and experimental information on the phase and modulus of Kπ form factors up to an energy t in = 1GeV 2. We further derive regions on the real axis and in the complex-energy plane where the form factors cannot have zeros.

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The availability of a reliable bound on an integral involving the square of the modulus of a form factor on the unitarity cut allows one to constrain the form factor at points inside the analyticity domain and its shape parameters, and also to isolate domains on the real axis and in the complex energy plane where zeros are excluded. In this lecture note, we review the mathematical techniques of this formalism in its standard form, known as the method of unitarity bounds, and recent developments which allow us to include information on the phase and modulus along a part of the unitarity cut. We also provide a brief summary of some results that we have obtained in the recent past, which demonstrate the usefulness of the method for precision predictions on the form factors.

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The K pi form factors are investigated at low energies by the method of unitarity bounds adapted so as to include information on the phase and modulus along the elastic region of the unitarity cut. Using as input the values of the form factors at t = 0, and at the Callan-Treiman point in the scalar case, stringent constraints are obtained on the slope and curvature parameters of the Taylor expansion at the origin.

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We calculate upper and lower bounds on the modulus of the pion electromagnetic form factor on the unitarity cut below the omega pi inelastic threshold, using as input the phase in the elastic region known via the Fermi-Watson theorem from the pi pi P-wave phase shift, and a suitably weighted integral of the modulus squared above the inelastic threshold. The normalization at t = 0, the pion charge radius and experimental values at spacelike momenta are used as additional input information. The bounds are model independent, in the sense that they do not rely on specific parametrizations and do not require assumptions on the phase of the form factor above the inelastic threshold. The results provide nontrivial consistency checks on the recent experimental data on the modulus available below the omega pi threshold from e(+)e(-) annihilation and tau-decay experiments. In particular, at low energies the calculated bounds offer a more precise description of the modulus than the experimental data.

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Analyticity and unitarity techniques are employed to estimate Taylor coefficients of the pion electromagnetic form factor at t = 0 by exploiting the recently evaluated two-pion contribution to the muon (g -aEuro parts per thousand 2) and the phase of the pion electromagnetic form factor in the elastic region, known from pi pi scattering by Fermi-Watson theorem and the values of the form factor at several points in the space-like region. Regions in the complex t-plane are isolated where the form factor cannot have zeros.

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In this paper, we address a physics based closed form model for the energy band gap (E-g) and the transport electron effective mass in relaxed and strained 100] and 110] oriented rectangular Silicon Nanowire (SiNW). Our proposed analytical model along 100] and 110] directions are based on the k.p formalism of the conduction band energy dispersion relation through an appropriate rotation of the Hamiltonian of the electrons in the bulk crystal along 001] direction followed by the inclusion of a 4 x 4 Luttinger Hamiltonian for the description of the valance band structure. Using this, we demonstrate the variation in Eg and the transport electron effective mass as function of the cross-sectional dimensions in a relaxed 100] and 110] oriented SiNW. The behaviour of these two parameters in 100] oriented SiNW has further been studied with the inclusion of a uniaxial strain along the transport direction and a biaxial strain, which is assumed to be decomposed from a hydrostatic deformation along 001] with the former one. In addition, the energy band gap and the effective mass of a strained 110] oriented SiNW has also been formulated. Using this, we compare our analytical model with that of the extracted data using the nearest neighbour empirical tight binding sp(3)d(5)s* method based simulations and has been found to agree well over a wide range of device dimensions and applied strain. (C) 2012 Elsevier Ltd. All rights reserved.