Modified Kanerva model. Results for real time word recognition

This paper describes results obtained using the modified Kanerva model to perform word recognition in continuous speech after being trained on the multi-speaker Alvey 'Hotel' speech corpus. Theoretical discoveries have recently enabled us to increase the speed of execution of part of the model by two orders of magnitude over that previously reported by Prager & Fallside. The memory required for the operation of the model has been similarly reduced. The recognition accuracy reaches 95% without syntactic constraints when tested on different data from seven trained speakers. Real time simulation of a model with 9,734 active units is now possible in both training and recognition modes using the Alvey PARSIFAL transputer array. The modified Kanerva model is a static network consisting of a fixed nonlinear mapping (location matching) followed by a single layer of conventional adaptive links. A section of preprocessed speech is transformed by the non-linear mapping to a high dimensional representation. From this intermediate representation a simple linear mapping is able to perform complex pattern discrimination to form the output, indicating the nature of the speech features present in the input window.

Chronic morphine selectively impairs cued fear extinction in rats: Implications for anxiety disorders associated with opiate use

Previous studies have shown that opioid transmission plays an important role in learning and memory. However, little is known about the course of opiate-associated learning and memory deficits after cessation of chronic opiate use in a behavioral animal m

Solid-state memories based on ferroelectric tunnel junctions.

Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10(6) A cm(-2)). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10(4) A cm(-2) at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism.