931 resultados para thin film thickness


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Tin dioxide (SnO2) thin films doped with Eu3+, are deposited by the sol-gel-dip-coating process on top of GaAs films, which is deposited by resistive evaporation on glass substrate. This heterojunction assembly presents luminescence from the rare-earth ion, unlike the SnO2 deposition directly on a glass substrate, where emissions from the Eu3+ transitions are absent. The Eu3+ transitions are clearly identified and are similar to the observation on SnO2 pressed powder (pellets), thermally treated at much higher temperatures. However, in the form of heterojunction films, the Eu emission comes along a broad band, located at higher energy compared to Eu3+ transitions, which is blue-shifted as the thermal annealing temperature increases. The size of nanocrystallites points toward quantum confinement or electron transfer between oxygen vacancies, originated from the disorder in the material, and trivalent rare-earth ions, which present acceptor-like character in this matrix. This electron transfer may relax for higher temperatures in the case of pellets, and the broad band is eliminated.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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In this study, we review recent advances in PFM studies of micrometer scale ferroelectric capacitors, summarize the experimental PFM-based approach to investigation of fast switching processes, illustrate what information can be obtained from PFM experiments on domains kinetics, and delineate the scaling effect on polarization reversal mechanism. Particular attention is given to PFM studies of mechanical stress effect on polarization stability.

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The need to develop new dental luting agents in order to improve the success of treatments has greatly motivated research. Objective: The aim of this study was to evaluate the diametral tensile strength (DTS) and film thickness (FT) of an experimental dental luting agent derived from castor oil (COP) with or without addition of different quantities of filler (calcium carbonate - CaCO3). Material and Methods: Eighty specimens were manufactured (DTS N=40; FT N=40) and divided into 4 groups: Pure COP; COP 10%; COP 50% and zinc phosphate (control). The cements were mixed according to the manufacturers' recommendations and submitted to the tests. The DTS test was performed in the MTS 810 testing machine (10 KN, 0.5 mm/min). For FT test, the cements were sandwiched between two glass plates (2 cm(2)) and a load of 15 kg was applied vertically on the top of the specimen for 10 min. The data were analyzed by means of one-way ANOVA and Tukey's test (alpha=0.05). Results: The values of DTS (MPa) were: Pure COP- 10.94 +/- 1.30; COP 10%- 30.06 +/- 0.64; COP 50%- 29.87 +/- 0.27; zinc phosphate- 4.88 +/- 0.96. The values of FT (pm) were: Pure COP- 31.09 +/- 3.16; COP 10%- 17.05 +/- 4.83; COP 50%- 13.03 +/- 4.83; Zinc Phosphate- 20.00 +/- 0.12. One-way ANOVA showed statistically significant differences among the groups (DTS - p=1.01E-40; FT - p=2.4E-10). Conclusion: The experimental dental luting agent with 50% of filler showed the best diametral tensile strength and film thickness.

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Due to its high Curie temperature of 420K and band structure calculations predicting 100% spin polarisation, Sr2FeMoO6 is a potential candidate for spintronic devices. However, the preparation of good quality thin films has proven to be a non-trivial task. Epitaxial Sr2FeMoO6 thin films were prepared by pulsed laser deposition on different substrates. Differing from previous reports a post-deposition annealing step at low oxygen partial pressure (10-5 mbar) was introduced and enabled the fabrication of reproducible, high quality samples. According to the structural properties of the substrates the crystal structure and morphology of the thin films are modified. The close interrelation between the structural, magnetic and electronic properties of Sr2FeMoO6 was studied. A detailed evaluation of the results allowed to extract valuable information on the microscopic nature of magnetism and charge transport. Smooth films with a mean roughness of about 2 nm have been achieved, which is a pre-requisite for a possible inclusion of this material in future devices. In order to establish device-oriented sub-micron patterning as a standard technique, electron beam lithography and focussed ion beam etching facilities have been put into operation. A detailed characterisation of these systems has been performed. To determine the technological prospects of new spintronics materials, the verification of a high spin polarisation is of vital interest. A popular technique for this task is point contact Andreev reflection (PCAR). Commonly, the charge transport in a transparent metal-superconductor contact of nanometer dimensions is attributed solely to coherent transport. If this condition is not fulfilled, inelastic processes in the constriction have to be considered. PCAR has been applied to Sr2FeMoO6 and the Heusler compound Co2Cr0.6Fe0.4Al. Systematic deviations between measured spectra and the standard models of PCAR have been observed. Therefore existing approaches have been generalised, in order to include the influence of heating. With the extended model the measured data was successfully reproduced but the analysis has revealed grave implications for the determination of spin polarisation, which was found to break down completely in certain cases.

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Zusammenfassung Zur Verbesserung der Leistungsumwandlung in organischen Solarzellen sind neue Materialien von zentraler Bedeutung, die sämtliche Erfordernisse für organische Photovoltaik-Elemente erfüllen. In der vorliegenden Arbeit „Organic thin-film photovoltaics“ wurden im Hinblick auf ein besseres Verständnis der Zusammenhänge zwischen molekularer Struktur und der Leistungsfähigkeit neue Materialien in „bulk-heterojunction“ Solarzellen und in Festphasen-Farbstoffsensibilisierten Solarzellen untersucht. Durch die Anwendung selbstorganisierender Materialien, diskotischer Graphen-Derivate oder konjugierter Polymere in Verbindung mit entsprechenden Akzeptoren in den „bulk-heterojunction“ Solarzellen wurde gezeigt, dass mit einer Erhöhung der Ordnung durch thermische Behandlung eine verbesserte Leistung des Photovoltaik-Elements einhergeht. In den Festphasen-Farbstoffsensibilisierten Solarzellen wurden zwei neue Farbstoffe untersucht, und es konnte gezeigt werden, dass diese gute Leistung zeigten. Ferner ermöglicht das komplementäre Absorptionsvermögen der beiden Farbstoffe die Herstellung von Vollspektrum-Zellen.

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CIGS-Dünnschichtsolarzellen verbinden hohe Effizienz mit niedrigen Kosten und sind damit eine aussichtsreiche Photovoltaik-Technologie. Das Verständnis des Absorbermaterials CIGS ist allerdings noch lückenhaft und benötigt weitere Forschung. In dieser Dissertation werden Computersimulationen vorgestellt, die erheblich zum besseren Verständnis von CIGS beitragen. Es wurden die beiden Systeme Cu(In,Ga)Se2 und (Cu,In,Vac)Se betrachtet. Die Gesamtenergie der Systeme wurde in Clusterentwicklungen ausgedrückt, die auf der Basis von ab initio Dichtefunktionalrechnungen erstellt wurden. Damit war es möglich Monte Carlo (MC)-Simulationen durchzuführen. Kanonische MC-Simulationen von Cu(In,Ga)Se2 zeigen das temperaturabhängige Verhalten der In-Ga-Verteilung. In der Nähe der Raumtemperatur findet ein Übergang von einer geordneten zu einer ungeordneten Phase statt. Unterhalb separiert das System in CuInSe2 und CuGaSe2. Oberhalb existiert eine gemischte Phase mit inhomogen verteilten In- und Ga-Clustern. Mit steigender Temperatur verkleinern sich die Cluster und die Homogenität nimmt zu. Bei allen Temperaturen, bis hin zur Produktionstemperatur der Solarzellen (¼ 870 K), ist In-reiches CIGS homogener als Ga-reiches CIGS. Das (Cu,In,Vac)Se-System wurde mit kanonischen und großkanonischen MC-Simulationen untersucht. Hier findet sich für das CuIn5Se8-Teilsystem ein Übergang von einer geordneten zu einer ungeordneten Phase bei T0 = 279 K. Großkanonische Simulationen mit vorgegebenen Werten für die chemischen Potentiale von Cu und In wurden verwendet, um die Konzentrations- Landschaft und damit die sich ergebenden Stöchiometrien zu bestimmen. Stabilitätsbereiche wurden für stöchiometrisches CuInSe2 und für die Defektphasen CuIn5Se8 und CuIn3Se5 bei einer Temperatur von 174 K identifiziert. Die Bereiche für die Defektphasen sind bei T = 696 K verschwunden. Die Konzentrations-Landschaft reproduziert auch die leicht Cu-armen Stöchiometrien, die bei Solarzellen mit guten Effizienzen experimentell beobachtet werden. Die Simulationsergebnisse können verwendet werden, um den industriellen CIGS-Produktionspr

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Functional and smart materials have gained large scientific and practical interest in current research and development. The Heusler alloys form an important class of functional materials used in spintronics, thermoelectrics, and for shape memory alloy applications. An important aspect of functional materials is the adaptability of their physical properties. In this work functional polycrystalline bulk and epitaxial thin film Heusler alloys are characterized by means of spectroscopic investigation methods, X-ray magnetic circular dichroism (XMCD) and energy dispersive X-ray analysis (EDX). With EDX the homogeneity of the samples is studied extensively. For some cases of quaternary compounds, for example Co2(MnxTi1−x)Sn and Co2(Mn0.5Dy0.5)Sn, an interesting phase separation in two nearly pure ternary Heusler phases occurs. For these samples the phase separation leads to an improvement of thermoelectric properties. XMCD as the main investigation method was used to study Co2TiZ (Z = Si, Sn, and Sb), Co2(MnxTi1−x)Si, Co2(MnxTi1−x)Ge, Co2Mn(Ga1−xGex), Co2FeAl, Mn2VAl, and Ni2MnGa Heusler compounds. The element-specific magnetic moments are calculated. Also, the spin-resolved unoccupied density of states is determined, for example giving hints for half-metallic ferromagnetism for some Co-based compounds. The systematic change of the magnetic moments and the shift of the Fermi energy is a proof that Heusler alloys are suitable for a controlled tailoring of physical properties. The comparison of the experimental results with theoretical predictions improves the understanding of complex materials needed to optimize functional Heusler alloys.

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A new 2-D hydrophone array for ultrasound therapy monitoring is presented, along with a novel algorithm for passive acoustic mapping using a sparse weighted aperture. The array is constructed using existing polyvinylidene fluoride (PVDF) ultrasound sensor technology, and is utilized for its broadband characteristics and its high receive sensitivity. For most 2-D arrays, high-resolution imagery is desired, which requires a large aperture at the cost of a large number of elements. The proposed array's geometry is sparse, with elements only on the boundary of the rectangular aperture. The missing information from the interior is filled in using linear imaging techniques. After receiving acoustic emissions during ultrasound therapy, this algorithm applies an apodization to the sparse aperture to limit side lobes and then reconstructs acoustic activity with high spatiotemporal resolution. Experiments show verification of the theoretical point spread function, and cavitation maps in agar phantoms correspond closely to predicted areas, showing the validity of the array and methodology.

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In recent times, the demand for the storage of electrical energy has grown rapidly for both static applications and the portable electronics enforcing the substantial improvement in battery systems, and Li-ion batteries have been proven to have maximum energy storage density in all rechargeable batteries. However, major breakthroughs are required to consummate the requirement of higher energy density with lower cost to penetrate new markets. Graphite anode having limited capacity has become a bottle neck in the process of developing next generation batteries and can be replaced by higher capacity metals such as Silicon. In the present study we are focusing on the mechanical behavior of the Si-thin film anode under various operating conditions. A numerical model is developed to simulate the intercalation induced stress and the failure mechanism of the complex anode structure. Effect of the various physical phenomena such as diffusion induced stress, plasticity and the crack propagation are investigated to predict better performance parameters for improved design.

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The aim of this study was to investigate the effect of the cement film thickness of a zinc phosphate or a resin cement on retention of untreated and pretreated root canal posts. Prefabricated zirconia posts (CosmoPost: 1.4 mm) and two types of luting cements (a zinc phosphate cement [DeTrey Zinc] and a self-etch adhesive resin cement [Panavia F2.0]) were used. After removal of the crowns of 360 extracted premolars, canines, or incisors, the root canals were prepared with a parallel-sided drill system to three different final diameters. Half the posts did not receive any pretreatment. The other half received tribochemical silicate coating according to the manufacturer's instructions. Posts were then luted in the prepared root canals (n=30 per group). Following water storage at 37°C for seven days, retention of the posts was determined by the pull-out method. Irrespective of the luting cement, pretreatment with tribochemical silicate coating significantly increased retention of the posts. Increased cement film thickness resulted in decreased retention of untreated posts and of pretreated posts luted with zinc phosphate cement. Increased cement film thickness had no influence on retention of pretreated posts luted with resin cement. Thus, retention of the posts was influenced by the type of luting cement, by the cement film thickness, and by the post pretreatment.

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Based upon high-resolution thermal-infrared Moderate-Resolution Imaging Spectroradiometer (MODIS) satellite imagery in combination with ERA-Interim atmospheric reanalysis data, we derived long-term polynya parameters such as polynya area, thin-ice thickness distribution and ice-production rates from daily cloud-cover corrected thin-ice thickness composites. Our study is based on a thirteen year investigation period (2002-2014) for the austral winter (1 April to 30 September) in the Antarctic Southern Weddell Sea. The focus lies on coastal polynyas which are important hot spots for new-ice formation, bottom-water formation and heat/moisture release into the atmosphere. MODIS has the capability to resolve even very narrow coastal polynyas. Its major disadvantage is the sensor limitation due to cloud cover. We make use of a newly developed and adapted spatial feature reconstruction scheme to account for cloud-covered areas. We find the sea-ice areas in front of Ronne and Brunt Ice Shelf to be the most active with an annual average polynya area of 3018 ± 1298 and 3516 ± 1420 km2 as well as an accumulated volume ice production of 31 ± 13 and 31 ± 12 km**3, respectively. For the remaining four regions, estimates amount to 421 ± 294 km**2 and 4 ± 3 km**3 (Antarctic Peninsula), 1148 ± 432 km**2 and 12 ± 5 km**3 (Iceberg A23A), 901 ± 703 km**2 and 10 ± 8 km**3 (Filchner Ice Shelf) as well as 499 ± 277 km**2 and 5 ± 2 km**3 (Coats Land). Our findings are discussed in comparison to recent studies based on coupled sea-ice/ocean models and passive-microwave satellite imagery, each investigating different parts of the Southern Weddell Sea.

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The transport properties of thin-film solar cells based on wide-gap CuGaSe(2) absorbers have been investigated as a function of the bulk [Ga]/[Cu] ratio ranging from 1.01 to 1.33. We find that (i) the recombination processes in devices prepared from absorbers with a composition close to stoichiometry ([Ga]/[Cu] = 1.01) are strongly tunnelling assisted resulting in low recombination activation energies (E(a)) of approx. 0.95 eV in the dark and 1.36 eV under illumination. (ii) With an increasing [Ga]/[Cu] ratio, the transport mechanism changes to be dominated by thermally activated Shockley-Read-Hall recombination with similar E(a) values of approx. 1.52-1.57 eV for bulk [Ga]/[Cu] ratios of 1.12-1.33. The dominant recombination processes take place at the interface between CdS buffer and CuGaSe(2) absorber independently from the absorber composition. The increase of E(a) with the [Ga]/[Cu] ratio correlates with the open circuit voltage and explains the better performance of corresponding solar cells.